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1. 发明授权

US07333927B2 Method for retrieving similar sentence in translation aid system 有权
标题翻译：在翻译辅助系统中检索类似句子的方法
公开(公告)号：US07333927B2
公开(公告)日：2008-02-19
申请号：US10202649
申请日：2002-07-25
申请人： Ki-Young Lee , Yoon-Hyung Roh , Chang Hyun Kim , Sung Kwon Choi , Young Kil Kim , Young-Ae Seo , Seung Il Yang , Cheol Ryu , Mun-Pyo Hong
发明人： Ki-Young Lee , Yoon-Hyung Roh , Chang Hyun Kim , Sung Kwon Choi , Young Kil Kim , Young-Ae Seo , Seung Il Yang , Cheol Ryu , Mun-Pyo Hong
IPC分类号： G06F17/28
CPC分类号： G06F17/2836
摘要： The method for retrieving a similar sentence to a source sentence inputted by a user through a translation memory in a translation aid system is provided. An inverted file of an index word and a translation memory from a parallel corpus are constituted. Candidate sentences having a high similarity are filtered by comparing the source sentence provided by the user with sentences of the constituted translation memory. A source sentence and a corresponding target sentence are outputted in the order of similarity by calculating similarity between the filtered candidate sentences and the source sentence.
摘要翻译：提供了一种通过翻译辅助系统中的翻译记忆库来检索由用户输入的源语句的类似句子的方法。从平行语料库构成索引词和翻译记忆库的反转文件。通过将用户提供的源句子与构成的翻译记忆库的句子进行比较来过滤具有高相似性的候选句子。通过计算过滤的候选句子和源语句之间的相似度，以相似性的顺序输出源语句和对应的目标句子。

2. 发明申请

US20130297284A1 APPARATUS AND METHOD FOR GENERATING POLITE EXPRESSIONS FOR AUTOMATIC TRANSLATION 审中-公开
标题翻译：用于生成用于自动翻译的波纹表达的装置和方法
公开(公告)号：US20130297284A1
公开(公告)日：2013-11-07
申请号：US13566486
申请日：2012-08-03
申请人： Sung-Kwon Choi , Oh-Woog Kwon , Ki-Young Lee , Yoon-Hyung Roh , Young-Kil Kim , Sang-Kyu Park
发明人： Sung-Kwon Choi , Oh-Woog Kwon , Ki-Young Lee , Yoon-Hyung Roh , Young-Kil Kim , Sang-Kyu Park
IPC分类号： G06F17/28
CPC分类号： G06F17/28
摘要： Disclosed herein are an apparatus and method for generating polite expressions for automatic translation. The apparatus includes a relationship recognition unit, a polite level selection unit, and a translation unit. The relationship recognition unit extracts relationship information from a conversation between first and second language users and personal information of the first and second language users and then recognizes the social relationship between the language users. The polite level selection unit selects a polite level for the conversation between the first and second language users based on the extracted relationship information. The translation unit generates polite expressions corresponding to the selected polite level, and translates the conversation between the first and second language users into a target language based on the generated polite expressions.
摘要翻译：这里公开了一种用于产生用于自动翻译的礼貌表达的装置和方法。该装置包括关系识别单元，礼貌级别选择单元和翻译单元。关系识别单元从第一语言用户和第二语言用户之间的对话提取关系信息以及第一和第二语言用户的个人信息，然后识别语言用户之间的社会关系。礼貌级别选择单元基于所提取的关系信息为第一语言用户和第二语言用户之间的会话选择礼貌级别。翻译单元生成对应于所选礼貌级别的礼貌表达，并且基于所生成的礼貌表达，将第一语言用户和第二语言用户之间的对话转换为目标语言。

3. 发明授权

US08895190B2 Preparation method of lithium-metal composite oxides 有权
标题翻译：锂金属复合氧化物的制备方法
公开(公告)号：US08895190B2
公开(公告)日：2014-11-25
申请号：US12223941
申请日：2007-02-16
申请人： Sung-Kyun Chang , Eui-Yong Bang , Min-Chul Jang , Sang-Hoon Choy , Ki-Young Lee , Wan-Jae Myeong , Kyu-Ho Song , Joo-Hyeong Lee , Young-Sik Hahn , Myung-Ho Cho , Yong-Tae Lee
发明人： Sung-Kyun Chang , Eui-Yong Bang , Min-Chul Jang , Sang-Hoon Choy , Ki-Young Lee , Wan-Jae Myeong , Kyu-Ho Song , Joo-Hyeong Lee , Young-Sik Hahn , Myung-Ho Cho , Yong-Tae Lee
IPC分类号： H01M4/485 , H01M4/88
CPC分类号： H01M4/505 , C01G45/1228 , C01G51/50 , C01G53/50 , C01P2002/72 , C01P2002/74 , C01P2002/86 , C01P2004/03 , C01P2004/32 , C01P2004/61 , C01P2006/11 , C01P2006/12 , C01P2006/13 , C01P2006/40 , H01M4/485 , H01M4/525 , H01M10/052 , H01M2004/021 , Y02P20/544 , Y10T29/49108
摘要： Disclosed is a method for preparing a lithium-metal composite oxide, the method comprising the steps of: (a) mixing an aqueous solution of one or more transition metal-containing precursor compounds with an alkalifying agent and a lithium precursor compound to precipitate hydroxides of the transition metals; (b) mixing the mixture of step (a) with water under supercritical or subcritical conditions to synthesize a lithium-metal composite oxide, and drying the lithium-metal composite oxide; and (c) subjecting the dried lithium-metal composite oxide either to calcination or to granulation and then calcination. Also disclosed are an electrode comprising the lithium-metal composite oxide, and an electrochemical device comprising the electrode. In the disclosed invention, a lithium-metal composite oxide synthesized based on the prior supercritical hydrothermal synthesis method is subjected either to calcination or to granulation and then calcination. Thus, unlike the prior dry calcination method or wet precipitation method, a uniform solid solution can be formed and the ordering of metals in the composite oxide can be improved. Accordingly, the lithium-metal composite oxide can show crystal stability and excellent electrochemical properties.
摘要翻译：公开了一种制备锂金属复合氧化物的方法，该方法包括以下步骤：（a）将一种或多种含过渡金属的前体化合物的水溶液与碱化剂和锂前体化合物混合，以沉淀氢氧化物过渡金属; （b）在超临界或亚临界条件下将步骤（a）的混合物与水混合以合成锂金属复合氧化物，并干燥该锂金属复合氧化物; 和（c）将干燥的锂金属复合氧化物进行煅烧或造粒，然后煅烧。还公开了包含锂金属复合氧化物的电极和包含电极的电化学装置。在所公开的发明中，将基于现有的超临界水热合成方法合成的锂金属复合氧化物进行煅烧或造粒，然后进行煅烧。因此，与现有的干式煅烧法或湿式沉淀法不同，可以形成均匀的固溶体，并且可以提高复合氧化物中的金属的有序性。因此，锂 - 金属复合氧化物可以显示出晶体稳定性和优异的电化学性能。

4. 发明授权

US08653528B2 Thin film transistor, display device thereof, and manufacturing method thereof 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US08653528B2
公开(公告)日：2014-02-18
申请号：US13036241
申请日：2011-02-28
申请人： Yong-Duck Son , Ki-Young Lee , Jin-Wook Seo , Min-Jae Jeong , Byung-Soo So , Seung-Kyu Park , Kii-Won Lee , Yun-Mo Chung , Byoung-Keon Park , Dong-Hyun Lee , Jong-Ryuk Park , Tak-Young Lee , Jae-Wan Jung
发明人： Yong-Duck Son , Ki-Young Lee , Jin-Wook Seo , Min-Jae Jeong , Byung-Soo So , Seung-Kyu Park , Kii-Won Lee , Yun-Mo Chung , Byoung-Keon Park , Dong-Hyun Lee , Jong-Ryuk Park , Tak-Young Lee , Jae-Wan Jung
IPC分类号： H01L29/76
CPC分类号： H01L27/1214 , H01L27/1255 , H01L29/66757
摘要： A thin film transistor including: an active layer formed on a substrate; a gate insulating layer pattern formed on a predetermined region of the active layer; a gate electrode formed on a predetermined region of the gate insulating layer pattern; an etching preventing layer pattern covering the gate insulating layer pattern and the gate electrode; and a source member and a drain member formed on the active layer and the etching preventing layer pattern.
摘要翻译：一种薄膜晶体管，包括：形成在基板上的有源层; 形成在有源层的预定区域上的栅极绝缘层图案; 形成在栅极绝缘层图案的预定区域上的栅电极; 覆盖所述栅极绝缘层图案和所述栅电极的防蚀层图案; 以及形成在有源层和防蚀层图案上的源极部件和漏极部件。

5. 发明申请

US20090162753A1 SPHERICAL CARBONS AND METHOD FOR PREPARING THE SAME 审中-公开
标题翻译：球形碳及其制备方法
公开(公告)号：US20090162753A1
公开(公告)日：2009-06-25
申请号：US12348092
申请日：2009-01-02
申请人： Ou-Jung Kwon , Seung-Mo Oh , Ki-Young Lee , Myung-Hwan Kim , Kyu-Tae Lee
发明人： Ou-Jung Kwon , Seung-Mo Oh , Ki-Young Lee , Myung-Hwan Kim , Kyu-Tae Lee
IPC分类号： H01M4/58 , C01B31/00
CPC分类号： H01M4/583 , C01B32/05 , C01B32/20 , C01P2004/32 , C01P2004/61 , C01P2006/12 , H01M4/133 , H01M10/052
摘要： The present invention provides a method for preparing spherical carbon comprising step of heat-treating a mixture of a carbon precursor and dispersion media, a spherical non-graphitizable carbon using the same, and a method for preparing spherical artificial graphite.
摘要翻译：本发明提供一种制备球形碳的方法，其包括用碳前体和分散介质的混合物进行热处理的步骤，使用其的球形不可石墨化碳和制备球形人造石墨的方法。

6. 发明授权

US07056486B2 Method for preparing lithium manganese spinel complex oxide having improved electrochemical performance 有权
公开(公告)号：US07056486B2
公开(公告)日：2006-06-06
申请号：US09959129
申请日：2001-01-19
申请人： Hong-Kyu Park , Yong-Hoon Kwon , Joon-Sung Bae , Ki-Young Lee
发明人： Hong-Kyu Park , Yong-Hoon Kwon , Joon-Sung Bae , Ki-Young Lee
IPC分类号： C01G45/12 , H01M4/50
CPC分类号： C01G45/1242 , C01G51/54 , C01G53/54 , C01P2002/32 , C01P2002/52 , C01P2002/72 , C01P2004/80 , C01P2006/40 , H01M4/505
摘要： The present invention relates to lithium manganese complex oxide with a spinel structure used as an active material of a lithium or lithium ion secondary battery. Specifically, the present invention relates to a process for preparing lithium manganese complex oxide having improved cyclic performance at a high temperature above room temperature, and a lithium or lithium ion secondary battery using the oxide prepared according to said process as a cathode active material.

7. 发明授权

US06881999B2 Semiconductor device with analog capacitor and method of fabricating the same 有权
公开(公告)号：US06881999B2
公开(公告)日：2005-04-19
申请号：US10393093
申请日：2003-03-20
申请人： Ki-Young Lee , Sang-Hoon Park
发明人： Ki-Young Lee , Sang-Hoon Park
IPC分类号： H01L21/02 , H01L21/768 , H01L27/08 , H01L21/8242
CPC分类号： H01L21/76834 , H01L21/76802 , H01L21/76807 , H01L21/76832 , H01L27/0805 , H01L28/40 , Y10S438/957
摘要： A semiconductor device having an analog capacitor and a method of fabricating the same are disclosed. The semiconductor device includes a bottom plate electrode disposed at a predetermined region of a semiconductor substrate, and an upper plate electrode having a region overlapped with the bottom plate electrode thereon. The upper plate electrode and the bottom plate electrode are formed of a metal compound. A capacitor dielectric layer is interposed between the bottom plate electrode and the upper plate electrode. A bottom electrode plug and an upper electrode plug are connected to the bottom plate electrode and the upper plate electrode through the interlayer dielectric layer.

8. 发明授权

US06479850B2 Method for fabricating an integrated circuit capacitor 有权
标题翻译：集成电路电容器的制造方法
公开(公告)号：US06479850B2
公开(公告)日：2002-11-12
申请号：US09968884
申请日：2001-10-03
申请人： Ki-Young Lee
发明人： Ki-Young Lee
IPC分类号： H01L27108
CPC分类号： H01L28/40 , H01L28/60 , H01L28/75 , Y10S438/978
摘要： A method for fabricating a MIM capacitor of a MDL logic or analog circuit of a semiconductor device. A conductivity layer is formed on a semiconductor substrate having a first inter-level insulating layer. A capping metal layer having an etching rate higher than an oxide layer is formed on the conductivity layer. A lower electrode comprising a “conductivity layer/capping metal layer” deposition is formed by selectively etching the capping metal layer and the conductivity layer in order to expose a predetermined part of the surface of the first inter-level insulating layer. A second inter-level insulating layer is formed on the first inter-level insulating layer covering the lower electrode. A via hole is formed by selectively etching both the second inter-level insulating layer and the lower electrode thereby to expose a portion of the lower electrode so that a tapered capping metal layer remains along the lower edges of the via hole. A dielectric layer, devoid of step coverage defects and concentrated electric fields, is inserted in the via hole between the lower and upper electrodes thereby preventing current leakage and short circuits at portions of the dielectric layer. This has the beneficial effect of substantially improving product yield and reliability.
摘要翻译：一种用于制造半导体器件的MDL逻辑或模拟电路的MIM电容器的方法。在具有第一层间绝缘层的半导体衬底上形成导电层。在导电层上形成具有高于氧化物层的蚀刻速率的覆盖金属层。通过选择性地蚀刻封盖金属层和导电层来形成包括“导电层/覆盖金属层”沉积的下电极，以暴露第一层间绝缘层的表面的预定部分。在覆盖下电极的第一层间绝缘层上形成第二层间绝缘层。通过选择性地蚀刻第二层间绝缘层和下电极来形成通孔，从而露出下电极的一部分，使得锥形封盖金属层沿着通孔的下边缘保留。在上下电极之间的通孔中插入没有台阶覆盖缺陷和集中电场的电介质层，从而防止电介质层部分的电流泄漏和短路。这具有显着提高产品产量和可靠性的有益效果。

9. 发明授权

US5918135A Methods for forming integrated circuit capacitors including dual electrode depositions 失效
标题翻译：用于形成集成电路电容器的方法包括双电极沉积
公开(公告)号：US5918135A
公开(公告)日：1999-06-29
申请号：US867070
申请日：1997-06-02
申请人： Ki-Young Lee , Kwang-Dong Yoo
发明人： Ki-Young Lee , Kwang-Dong Yoo
IPC分类号： H01L27/04 , H01L21/02 , H01L21/822 , H01L29/00 , H01L21/20
CPC分类号： H01L28/60
摘要： A method for forming an integrated circuit device includes the steps of forming a first capacitor electrode on a substrate and forming a first wiring electrode on the substrate. An insulating layer is formed on the first capacitor electrode and on the first wiring electrode opposite the substrate. A second capacitor electrode is formed on a portion of the insulating layer opposite the first capacitor electrode. A contact hole is formed in the insulating layer exposing a portion of the first wiring electrode. A second wiring electrode is then formed on the exposed portion of the wiring electrode, after forming the second capacitor electrode. Related structures are also discussed.
摘要翻译：一种形成集成电路器件的方法包括以下步骤：在衬底上形成第一电容器电极，并在衬底上形成第一布线电极。绝缘层形成在第一电容器电极上和与基板相对的第一布线电极上。第二电容器电极形成在与第一电容器电极相对的绝缘层的一部分上。在绝缘层中形成暴露第一布线电极的一部分的接触孔。在形成第二电容器电极之后，在布线电极的露出部分上形成第二布线电极。还讨论了相关结构。

10. 发明申请

US20070224771A1 SEMICONDUCTOR DEVICE HAVING FUSE AND CAPACITOR AT THE SAME LEVEL AND METHOD OF FABRICATING THE SAME 失效
标题翻译：具有同一水平的保险丝和电容器的半导体器件及其制造方法
公开(公告)号：US20070224771A1
公开(公告)日：2007-09-27
申请号：US11755193
申请日：2007-05-30
申请人： Seung-Han Park , Ki-Young Lee
发明人： Seung-Han Park , Ki-Young Lee
IPC分类号： H01L29/00
CPC分类号： H01L28/40 , H01L23/5223 , H01L23/5256 , H01L27/0805 , H01L2924/0002 , H01L2924/00
摘要： In a semiconductor device and a method of fabricating the same, a fuse and a capacitor are formed at a same level on a semiconductor substrate having a fuse area and a capacitor area. The fuse is placed on the fuse area, and a lower plate is placed on the capacitor area. The lower plate is located on a same plane as the fuse. Further, an upper plate is located above the lower plate, and a capping layer is interposed between the lower plate and the upper plate. Therefore, the fuse and the capacitor can be formed at the same time, thereby minimizing photolithography and etch process steps.
摘要翻译：在半导体器件及其制造方法中，在具有熔丝区域和电容器面积的半导体衬底上，在同一电平上形成熔丝和电容器。保险丝放置在保险丝区域上，下电极放置在电容器区域上。下板位于与保险丝相同的平面上。此外，上板位于下板的上方，并且在下板和上板之间插入有盖层。因此，可以同时形成熔丝和电容器，从而使光刻和蚀刻工艺步骤最小化。

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