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1. 发明申请

US20110012104A1 Organic light emitting display device and fabricating method thereof 有权
标题翻译：有机发光显示装置及其制造方法
公开(公告)号：US20110012104A1
公开(公告)日：2011-01-20
申请号：US12656264
申请日：2010-01-22
申请人： Ki-Nyeng Kang , Jae-Seob Lee , Dong-Un Jin
发明人： Ki-Nyeng Kang , Jae-Seob Lee , Dong-Un Jin
IPC分类号： H01L33/00 , H01L29/786 , H01L21/34 , H01L21/28
CPC分类号： H01L27/12 , H01L27/1225 , H01L27/1251
摘要： An organic light emitting display includes data lines and scan lines intersecting each other, a scan driving unit for supplying a scan signal to the scan lines, a data driving unit for supplying a data signal to the data lines, and pixels defined at intersection points of the data and scan lines, each pixel having an organic light emitting diode, a first TFT with an inverted staggered top gate structure and connected to the organic light emitting diode, the first TFT including an oxide semiconductor as an active layer, and a second TFT with an inverted staggered bottom gate structure and configured to receive the scan signal from the scan lines, the second TFT including an oxide semiconductor as an active layer.
摘要翻译：有机发光显示器包括彼此相交的数据线和扫描线，用于向扫描线提供扫描信号的扫描驱动单元，用于向数据线提供数据信号的数据驱动单元，以及在数据线的交点处定义的像素数据和扫描线，每个像素具有有机发光二极管，具有倒置交错顶栅结构并连接到有机发光二极管的第一TFT，第一TFT包括氧化物半导体作为有源层，第二TFT 具有倒置交错的底栅结构并被配置为从扫描线接收扫描信号，第二TFT包括氧化物半导体作为有源层。

2. 发明授权

US08212247B2 Organic light emitting display device and fabricating method thereof 有权
标题翻译：有机发光显示装置及其制造方法
公开(公告)号：US08212247B2
公开(公告)日：2012-07-03
申请号：US12656264
申请日：2010-01-22
申请人： Ki-Nyeng Kang , Jae-Seob Lee , Dong-Un Jin
发明人： Ki-Nyeng Kang , Jae-Seob Lee , Dong-Un Jin
IPC分类号： H01L21/00
CPC分类号： H01L27/12 , H01L27/1225 , H01L27/1251
摘要： An organic light emitting display includes data lines and scan lines intersecting each other, a scan driving unit for supplying a scan signal to the scan lines, a data driving unit for supplying a data signal to the data lines, and pixels defined at intersection points of the data and scan lines, each pixel having an organic light emitting diode, a first TFT with an inverted staggered top gate structure and connected to the organic light emitting diode, the first TFT including an oxide semiconductor as an active layer, and a second TFT with an inverted staggered bottom gate structure and configured to receive the scan signal from the scan lines, the second TFT including an oxide semiconductor as an active layer.
摘要翻译：有机发光显示器包括彼此相交的数据线和扫描线，用于向扫描线提供扫描信号的扫描驱动单元，用于向数据线提供数据信号的数据驱动单元，以及在数据线的交点处定义的像素数据和扫描线，每个像素具有有机发光二极管，具有倒置交错顶栅结构并连接到有机发光二极管的第一TFT，第一TFT包括氧化物半导体作为有源层，第二TFT 具有倒置交错的底栅结构并被配置为从扫描线接收扫描信号，第二TFT包括氧化物半导体作为有源层。

3. 发明授权

US08384078B2 Organic light emitting display device and method of manufacturing the same 有权
标题翻译：有机发光显示装置及其制造方法
公开(公告)号：US08384078B2
公开(公告)日：2013-02-26
申请号：US12831533
申请日：2010-07-07
申请人： Ki-Nyeng Kang , Young-Shin Pyo , Jae-Seob Lee
发明人： Ki-Nyeng Kang , Young-Shin Pyo , Jae-Seob Lee
IPC分类号： H01L29/10
CPC分类号： H01L27/3244 , H01L27/3276
摘要： An organic light emitting display device and a method for manufacturing the same. The organic light emitting display device includes: an insulating layer formed on a substrate; a resistance layer of oxide semiconductor formed on the insulating layer; a wiring layer connected to both side portions of the resistance layer; an organic layer formed on the upper portion including the resistance layer and the wiring layer; and a capping layer formed on the organic layer to be overlapped with the resistance layer.
摘要翻译：一种有机发光显示装置及其制造方法。有机发光显示装置包括：形成在基板上的绝缘层; 形成在所述绝缘层上的氧化物半导体的电阻层; 连接到电阻层的两侧部分的布线层; 形成在包括电阻层和布线层的上部的有机层; 以及形成在有机层上以与电阻层重叠的覆盖层。

4. 发明申请

US20110127519A1 ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：有机发光显示装置及其制造方法
公开(公告)号：US20110127519A1
公开(公告)日：2011-06-02
申请号：US12831533
申请日：2010-07-07
申请人： Ki-Nyeng KANG , Young-Shin Pyo , Jae-Seob Lee
发明人： Ki-Nyeng KANG , Young-Shin Pyo , Jae-Seob Lee
IPC分类号： H01L33/28 , H01L21/36 , H01L29/22
CPC分类号： H01L27/3244 , H01L27/3276
摘要： An organic light emitting display device and a method for manufacturing the same. The organic light emitting display device includes: an insulating layer formed on a substrate; a resistance layer of oxide semiconductor formed on the insulating layer; a wiring layer connected to both side portions of the resistance layer; an organic layer formed on the upper portion including the resistance layer and the wiring layer; and a capping layer formed on the organic layer to be overlapped with the resistance layer.
摘要翻译：一种有机发光显示装置及其制造方法。有机发光显示装置包括：形成在基板上的绝缘层; 形成在所述绝缘层上的氧化物半导体的电阻层; 连接到电阻层的两侧部分的布线层; 形成在包括电阻层和布线层的上部的有机层; 以及形成在有机层上以与电阻层重叠的覆盖层。

5. 发明授权

US08508125B2 Organic light emitting display apparatus 有权
标题翻译：有机发光显示装置
公开(公告)号：US08508125B2
公开(公告)日：2013-08-13
申请号：US12890165
申请日：2010-09-24
申请人： Denis Stryakhilev , Tae-Woong Kim , Jae-Seob Lee , Young-Shin Pyo , Dong-Un Jin , Dong-Beom Lee
发明人： Denis Stryakhilev , Tae-Woong Kim , Jae-Seob Lee , Young-Shin Pyo , Dong-Un Jin , Dong-Beom Lee
IPC分类号： H01J1/62
CPC分类号： H01L29/4908 , G09G3/3225 , G09G2300/0443 , H01L27/1248 , H01L27/3262
摘要： Provided is an organic light emitting display apparatus including a substrate, a thin film transistor disposed on the substrate and including an active layer, a gate electrode, a gate insulator, a source electrode and a drain electrode, a first electrode electrically connected to the source electrode or the drain electrode, a second electrode disposed to face the first electrode, and an intermediate layer including an organic emitting layer and disposed between the first electrode and the second electrode. The gate insulator is disposed to insulate the gate electrode and the active layer and includes a plurality of patterns spaced apart from each other.
摘要翻译：本发明提供一种有机发光显示装置，包括：基板，设置在基板上的薄膜晶体管，具有有源层，栅极电极，栅极绝缘体，源电极和漏极电极，与源极电连接的第一电极电极或漏电极，与第一电极相对设置的第二电极以及设置在第一电极和第二电极之间的包含有机发光层的中间层。门绝缘体设置成使栅电极和有源层绝缘，并且包括彼此间隔开的多个图案。

6. 发明授权

US08119250B2 Flexible substrate, method of fabricating the same, and thin film transistor using the same 有权
公开(公告)号：US08119250B2
公开(公告)日：2012-02-21
申请号：US12379648
申请日：2009-02-26
申请人： Jae-Seob Lee , Dong-Un Jin , Yeon-Gon Mo , Tae-Woong Kim
发明人： Jae-Seob Lee , Dong-Un Jin , Yeon-Gon Mo , Tae-Woong Kim
IPC分类号： B32B15/04 , H05H1/24
摘要： A flexible substrate for a TFT includes a metal substrate having a predetermined coefficient of thermal expansion, and a buffer layer on the metal substrate, the buffer layer including a silicon oxide or a silicon nitride, wherein the predetermined coefficient of thermal expansion of the metal substrate satisfies an equation as follows, α f + 0.162 × ( 1 - v f ) E f ≤ α s ≤ α f + 0.889 × ( 1 - v f ) E f Ef representing Young's modulus of the buffer layer, vf representing Poisson's ratio of the buffer layer, αf representing a coefficient of thermal expansion of the buffer layer, and αs representing the predetermined coefficient of thermal expansion of the metal substrate.

7. 发明申请

US20090289258A1 Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the same 有权
标题翻译：薄膜晶体管，其制造方法以及包括该薄膜晶体管的有机发光二极管显示装置
公开(公告)号：US20090289258A1
公开(公告)日：2009-11-26
申请号：US12453724
申请日：2009-05-20
申请人： Eun-Hyun Kim , Jae-Seob Lee , Dong-Un Jin
发明人： Eun-Hyun Kim , Jae-Seob Lee , Dong-Un Jin
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/66765 , H01L27/1281 , H01L27/3262 , H01L29/78618 , H01L29/78669 , H01L29/78678
摘要： A thin film transistor, a method of fabricating the same, and an organic light emitting diode display device including the same, which allow a size of a grain of a channel region to be increased, can effectively protect the channel region of a semiconductor layer at the time of etching process, and can reduce processing cost. The thin film transistor includes a substrate, a gate electrode disposed on the substrate, a gate insulating layer disposed on the gate electrode, a semiconductor layer pattern disposed on the gate insulating layer and including a channel region, a source region and a drain region, an etch stop layer pattern disposed on the channel region of the semiconductor layer pattern and having a thickness of 20 to 60nm, and source and drain electrodes disposed on the source and drain regions of the semiconductor layer pattern, respectively.
摘要翻译：一种薄膜晶体管及其制造方法，以及包含该薄膜晶体管的有机发光二极管显示装置，其能够增加沟道区域的尺寸，可以有效地保护半导体层的沟道区域蚀刻过程的时间，并可以降低加工成本。薄膜晶体管包括基板，设置在基板上的栅极电极，设置在栅电极上的栅极绝缘层，设置在栅极绝缘层上并包括沟道区域，源极区域和漏极区域的半导体层图案，蚀刻停止层图案，设置在半导体层图案的沟道区上并具有20至60nm的厚度，以及分别设置在半导体层图案的源极和漏极区域上的源极和漏极。

8. 发明授权

US08221889B2 Flexible substrate, method of fabricating the same, and thin film transistor using the same 有权
标题翻译：柔性基板及其制造方法以及使用其的薄膜晶体管
公开(公告)号：US08221889B2
公开(公告)日：2012-07-17
申请号：US12379648
申请日：2009-02-26
申请人： Jae-Seob Lee , Dong-Un Jin , Yeon-Gon Mo , Tae-Woong Kim
发明人： Jae-Seob Lee , Dong-Un Jin , Yeon-Gon Mo , Tae-Woong Kim
IPC分类号： B32B15/04 , H05H1/24
CPC分类号： H01L29/78603 , Y10T428/12431 , Y10T428/31678
摘要： A flexible substrate for a TFT includes a metal substrate having a predetermined coefficient of thermal expansion, and a buffer layer on the metal substrate, the buffer layer including a silicon oxide or a silicon nitride, wherein the predetermined coefficient of thermal expansion of the metal substrate satisfies an equation as follows, α f + 0.162 × ( 1 - v f ) E f ≤ α s ≤ α f + 0.889 × ( 1 - v f ) E f Ef representing Young's modulus of the buffer layer, vf representing Poisson's ratio of the buffer layer, αf representing a coefficient of thermal expansion of the buffer layer, and αs representing the predetermined coefficient of thermal expansion of the metal substrate.
摘要翻译：用于TFT的柔性基板包括具有预定热膨胀系数的金属基板和金属基板上的缓冲层，缓冲层包括氧化硅或氮化硅，其中金属基板的预定热膨胀系数满足以下等式：αf + 0.162×（1-vf）E f≤αs≤αf + 0.889×（1-vf）E f Ef表示缓冲层的杨氏模量，vf表示缓冲器的泊松比层，表示缓冲层的热膨胀系数的αf，表示金属基板的规定的热膨胀系数的αs。

9. 发明授权

US08211725B2 Method of manufacturing flexible display device 有权
标题翻译：制造柔性显示装置的方法
公开(公告)号：US08211725B2
公开(公告)日：2012-07-03
申请号：US13040906
申请日：2011-03-04
申请人： Yong-Hwan Park , Jae-Seob Lee , Moo-Jin Kim , Young-Shin Pyo , Sang-Joon Seo , Hoon-Kee Min , Dong-Un Jin
发明人： Yong-Hwan Park , Jae-Seob Lee , Moo-Jin Kim , Young-Shin Pyo , Sang-Joon Seo , Hoon-Kee Min , Dong-Un Jin
IPC分类号： H01L21/00
CPC分类号： H01L27/1266 , H01L27/1218 , H01L27/1292 , H01L2251/566
摘要： A method of manufacturing a flexible display device is disclosed. The method includes arranging a first substrate having a plurality of depression units, forming a first plastic film in each of the plurality of depression units, forming a thin film transistor (TFT) on the first plastic film, forming a display device on the TFT, where the display device is configured to be electrically connected to the TFT, encapsulating an upper portion of the display device, cutting the first substrate, and separating the first substrate from the first plastic film.
摘要翻译：公开了制造柔性显示装置的方法。该方法包括布置具有多个凹陷单元的第一基板，在多个凹陷单元中的每一个中形成第一塑料膜，在第一塑料膜上形成薄膜晶体管（TFT），在TFT上形成显示装置，其中所述显示装置被配置为电连接到所述TFT，封装所述显示装置的上部，切割所述第一基板，以及将所述第一基板与所述第一塑料膜分离。

10. 发明申请

US20090256154A1 Flexible substrate, method of fabricating the same, and thin film transistor using the same 有权
标题翻译：柔性基板及其制造方法以及使用其的薄膜晶体管
公开(公告)号：US20090256154A1
公开(公告)日：2009-10-15
申请号：US12379648
申请日：2009-02-26
申请人： Jae-Seob Lee , Dong-Un Jin , Yeon-Gon Mo , Tae-Woong Kim
发明人： Jae-Seob Lee , Dong-Un Jin , Yeon-Gon Mo , Tae-Woong Kim
IPC分类号： H01L29/786
CPC分类号： H01L29/78603 , Y10T428/12431 , Y10T428/31678
摘要： A flexible substrate for a TFT includes a metal substrate having a predetermined coefficient of thermal expansion, and a buffer layer on the metal substrate, the buffer layer including a silicon oxide or a silicon nitride, wherein the predetermined coefficient of thermal expansion of the metal substrate satisfies an equation as follows, α f + 0.162 × ( 1 - v f ) E f ≤ α s ≤ α f + 0.889 × ( 1 - v f ) E f Ef representing Young's modulus of the buffer layer, vf representing Poisson's ratio of the buffer layer, αf representing a coefficient of thermal expansion of the buffer layer, and αs representing the predetermined coefficient of thermal expansion of the metal substrate.
摘要翻译：用于TFT的柔性基板包括具有预定热膨胀系数的金属基板和金属基板上的缓冲层，缓冲层包括氧化硅或氮化硅，其中金属基板的预定热膨胀系数满足以下等式：αf + 0.162 x（1-vf）E fαsαf + 0.889 x（1-vf）E f Ef表示缓冲层的杨氏模量，vf表示缓冲层的泊松比， alfaf表示缓冲层的热膨胀系数，α表示金属基板的预定的热膨胀系数。

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