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    • 2. 发明申请
    • M2M SERVCE PROVIDING SYSTEM, M2M TERMINAL, AND OPERATION METHODS THEREOF
    • M2M伺服器提供系统,M2M终端及其操作方法
    • US20120203905A1
    • 2012-08-09
    • US13367588
    • 2012-02-07
    • Ki-Ho LeeJong-Ho Park
    • Ki-Ho LeeJong-Ho Park
    • G06F15/173
    • H04L69/28H04W4/70H04W8/06H04W60/04
    • Provided are a machine to machine (M2M) service providing system, M2M terminals, and operation methods thereof. The M2M service providing system may include a location registration server and a M2M managing server. The location registration server may be configured to receive a location registration request from a M2M terminal and transmit a location registration response to the at least one M2M terminal, thereby allowing the at least one M2M terminal to access a mobile communication network. The M2M managing server may be configured to provide one of inactivation timer information and M2M server access period timer information in the M2M terminal according to a M2M service enrollment status of the M2M terminal.
    • 提供机器到机器(M2M)服务提供系统,M2M终端及其操作方法。 M2M服务提供系统可以包括位置注册服务器和M2M管理服务器。 位置登记服务器可以被配置为从M2M终端接收位置注册请求,并且向所述至少一个M2M终端发送位置登记响应,从而允许所述至少一个M2M终端接入移动通信网络。 M2M管理服务器可以被配置为根据M2M终端的M2M服务登记状态在M2M终端中提供灭活定时器信息和M2M服务器访问周期定时器信息之一。
    • 7. 发明申请
    • NON-VOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE DEVICE
    • 非易失性存储器件和用于制造器件的方法
    • US20130181278A1
    • 2013-07-18
    • US13608796
    • 2012-09-10
    • Sung-Hun LEESung-Hoi HurJong-Ho Park
    • Sung-Hun LEESung-Hoi HurJong-Ho Park
    • H01L29/792
    • H01L27/1157H01L21/764H01L27/11524H01L29/40114H01L29/40117H01L29/42324H01L29/4234
    • Provided is a non-volatile memory device that includes a substrate including a plurality of active regions extending in a first direction and a plurality of element isolation trenches disposed between the active regions, a plurality of tunnel insulating layer patterns and a plurality of storage layer patterns sequentially disposed on the substrate, a plurality of blocking insulating layers and a plurality of gate electrodes disposed on the storage layer patterns and extending in a second direction perpendicular to the first direction, and first insulating layers including air gaps disposed between the active regions on the element isolation trenches and extending in the first direction, wherein the active regions include first active regions and second active regions adjacent to the first active regions, wherein a width of first air gaps is different from a width of second air gaps.
    • 提供了一种非易失性存储器件,其包括:衬底,其包括在第一方向上延伸的多个有源区和设置在有源区之间的多个元件隔离沟槽;多个隧道绝缘层图案和多个存储层图案 顺序地设置在基板上,多个阻挡绝缘层和多个栅电极,其设置在存储层图案上并沿垂直于第一方向的第二方向延伸,并且第一绝缘层包括设置在第一方向上的有源区之间的气隙 元件隔离沟槽并沿第一方向延伸,其中有源区包括与第一有源区相邻的第一有源区和第二有源区,其中第一气隙的宽度不同于第二气隙的宽度。
    • 10. 发明授权
    • Non-volatile memory devices having floating gates
    • 具有浮动门的非易失性存储器件
    • US07592665B2
    • 2009-09-22
    • US11594327
    • 2006-11-08
    • Joon-Hee LeeJong-Ho ParkJin-Hyun ShinSung-Hoi HurYong-Seok KimJong-Won Kim
    • Joon-Hee LeeJong-Ho ParkJin-Hyun ShinSung-Hoi HurYong-Seok KimJong-Won Kim
    • H01L29/788
    • H01L29/7881H01L27/115H01L27/11521H01L29/42324
    • A nonvolatile memory device may include a substrate having a cell region, and a cell device isolation layer on the cell region of the substrate to define a cell active region. A floating gate may include a lower floating gate and an upper floating gate sequentially stacked on the cell active region, and a tunnel insulation pattern may be between the floating gate and the cell active region. A control gate electrode may be on the floating gate, and a blocking insulation pattern may be between the control gate electrode and the floating gate. More particularly, the upper floating gate may include a flat portion on the lower floating gate and a pair of wall portions extending upward from both edges of the flat portion adjacent to the cell device isolation layer. Moreover, a width of an upper portion of a space surrounded by the flat portion and the pair of wall portions may be larger than a width of a lower portion of the space. Related methods are also discussed.
    • 非易失性存储器件可以包括具有单元区域的衬底和在衬底的单元区域上的单元器件隔离层,以限定电池活性区域。 浮置栅极可以包括顺序堆叠在单元有源区上的下浮置栅极和上浮置栅极,并且隧道绝缘图案可以在浮栅和电池有源区之间。 控制栅极电极可以在浮置栅极上,并且阻挡绝缘图案可以在控制栅电极和浮栅之间。 更具体地说,上部浮动栅极可以包括在下部浮动栅极上的平坦部分和从邻近电池器件隔离层的平坦部分的两个边缘向上延伸的一对壁部分。 此外,由平坦部分和一对壁部分围绕的空间的上部的宽度可以大于空间的下部的宽度。 还讨论了相关方法。