专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20140367720A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20140367720A1
公开(公告)日：2014-12-18
申请号：US14300642
申请日：2014-06-10
申请人： Ki Seok KIM , Sang Seok LEE , Su Yeol LEE , Chan Mook LIM
发明人： Ki Seok KIM , Sang Seok LEE , Su Yeol LEE , Chan Mook LIM
IPC分类号： H01L33/42 , H01L33/40
CPC分类号： H01L33/42 , H01L33/38 , H01L33/405 , H01L33/46
摘要： A semiconductor light emitting device and method of manufacturing the semiconductor light emitting device are provided. The semiconductor light emitting device includes a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. The device may also includes a first electrode connected to the first conductivity type semiconductor layer, and a second electrode connected to the second conductivity type semiconductor layer and having a pad region and a finger region extended from the pad region in one direction. The second electrode may include a transparent electrode part positioned on the second conductivity type semiconductor layer and including at least one opening therein, at least one reflective part spaced apart from the transparent electrode part within the opening and disposed in the pad region and the finger region, and a bonding part positioned on at least one portion of the reflective part and including a plurality of bonding finger parts spaced apart from each other in the finger region and a bonding pad part disposed in the pad region.
摘要翻译：提供半导体发光器件和制造半导体发光器件的方法。半导体发光器件包括包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构。该器件还可以包括连接到第一导电类型半导体层的第一电极和连接到第二导电类型半导体层的第二电极，并且具有在一个方向上从焊盘区域延伸的焊盘区域和手指区域。第二电极可以包括位于第二导电类型半导体层上并且包括其中的至少一个开口的透明电极部分，至少一个反射部分与开口内的透明电极部分间隔开并且设置在焊盘区域中，并且指状区域以及位于所述反射部分的至少一部分上并且包括在所述手指区域中彼此间隔开的多个接合指状部分的接合部分和设置在所述焊盘区域中的接合焊盘部分。

2. 发明申请

US20160351754A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译：半导体发光器件
公开(公告)号：US20160351754A1
公开(公告)日：2016-12-01
申请号：US15089683
申请日：2016-04-04
申请人： Myeong Ha KIM , Chan Mook LIM
发明人： Myeong Ha KIM , Chan Mook LIM
IPC分类号： H01L33/46 , H01L33/32 , H01L33/06
CPC分类号： H01L33/46
摘要： A semiconductor light-emitting device having improved light extraction efficiency provided by a reflector including a separation layer. The separation layer may be interposed between first and second Bragg layers including one or more pairs of refractive layers having different refractive indices, the first pairs being stacked on one side of the separation layer and the second pairs being stacked on an opposing side of the separation layer.
摘要翻译：一种具有由包括分离层的反射器提供的改进的光提取效率的半导体发光器件。分离层可以插入在包括一对或多对具有不同折射率的折射层的第一和第二布拉格层之间，第一对堆叠在分离层的一侧上，第二对堆叠在分离相对侧上层。

3. 发明申请

US20150091041A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING APPARATUS INCLUDING THE SAME 审中-公开
标题翻译：半导体发光装置和半导体发光装置，包括它们
公开(公告)号：US20150091041A1
公开(公告)日：2015-04-02
申请号：US14454559
申请日：2014-08-07
申请人： Ju Heon YOON , Myeong Ha KIM , Chan Mook LIM , Joon Woo JEON , Jin Young CHOI
发明人： Ju Heon YOON , Myeong Ha KIM , Chan Mook LIM , Joon Woo JEON , Jin Young CHOI
IPC分类号： H01L27/15 , H01L33/38
CPC分类号： H01L27/15 , H01L25/167 , H01L33/382 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor light emitting device includes a substrate, a first structure, a second structure, first and second n-electrodes, and first and second p-electrodes. The first structure is disposed on the substrate and includes a first n-type semiconductor layer, a first active layer, and a first p-type semiconductor layer. The second structure is spaced apart from the first structure on the substrate and includes a second n-type semiconductor layer, a second active layer and a second p-type semiconductor layer. The first n-electrode and the first p-electrode are connected to the first n-type semiconductor layer and the first p-type semiconductor layer, respectively. The second n-electrode and the second p-electrode are connected to the second n-type semiconductor layer and the second p-type semiconductor layer, respectively. The second n-electrode is spaced apart from the second active layer to encompass the second active layer.
摘要翻译：半导体发光器件包括衬底，第一结构，第二结构，第一和第二n电极以及第一和第二p电极。第一结构设置在基板上，并且包括第一n型半导体层，第一有源层和第一p型半导体层。第二结构与衬底上的第一结构间隔开，并且包括第二n型半导体层，第二有源层和第二p型半导体层。第一n电极和第一p电极分别连接到第一n型半导体层和第一p型半导体层。第二n电极和第二p电极分别连接到第二n型半导体层和第二p型半导体层。第二n电极与第二有源层间隔开以包围第二有源层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式