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    • 5. 发明授权
    • Semiconductor device and method of making same
    • 半导体器件及其制造方法
    • US06448629B2
    • 2002-09-10
    • US09354742
    • 1999-07-29
    • Rebecca D. MihKevin S. Petrarca
    • Rebecca D. MihKevin S. Petrarca
    • H01L2906
    • H01L21/0332H01L21/76224H01L21/7684
    • A second or cap dielectric layer is interposed between the usual or base dielectric layer and the metallic circuitry layer of a semiconductor device. The base dielectric layer has a plurality of recesses in an inactive part of the semiconductor device into which parts of the cap dielectric layer extend to interlock the cap dielectric layer to the base dielectric layer and to oppose shearing or tearing of the either (1) the metallic circuitry layer as the metallic circuitry layer is subjected to chemical-mechanical polishing, or (2) a hard mask layer from the base dielectric layer as the metallic circuitry layer is subjected to chemical-mechanical polishing.
    • 第二或盖电介质层介于通常的或基底电介质层与半导体器件的金属电路层之间。 基极电介质层在半导体器件的非活性部分中具有多个凹部,盖电介质层的部分延伸以将盖电介质层与基底电介质层互锁,并且相对于(1)的剪切或撕裂 金属电路层作为金属电路层进行化学机械抛光,或(2)当金属电路层进行化学机械抛光时,从基极介电层获得硬掩模层。
    • 6. 发明授权
    • Microprocessor having air as a dielectric and encapsulated lines and process for manufacture
    • 具有空气作为电介质的微处理器和封装线及其制造方法
    • US06268261B1
    • 2001-07-31
    • US09185185
    • 1998-11-03
    • Kevin S. PetrarcaRebecca D. Mih
    • Kevin S. PetrarcaRebecca D. Mih
    • H01L2176
    • H01L21/7682H01L21/764
    • A process for manufacturing a semiconductor circuit. The process comprises creating a plurality of adjacent conductive lines having a solid fill between the conductive lines; creating one or more layers above the lines and the fill; creating one or more pathways to the fill through the layers; and converting the fill to a gas that escapes through the pathways, leaving an air void between adjacent lines. To protect the lines from oxidation during processing, a related process for encapsulating conductive lines in one or more adhesion-promotion barrier layers may be performed. The encapsulation process may also be practiced in conjunction with other semiconductor manufacturing processes. The processes result in a multi-layer semiconductor circuit comprising conductive lines, wherein the lines have air as a dielectric between them, are encapsulated by an adhesion-promotion barrier layer, or both.
    • 一种制造半导体电路的工艺。 该方法包括产生多条相邻的导线,其中导电线之间具有固体填充物; 在线和填充之上创建一个或多个层; 创建通过层的填充的一个或多个途径; 并将填充物转化为通过通道逸出的气体,在相邻管线之间留下空气。 为了在加工过程中保护管线免受氧化,可以执行用于将导电线封装在一个或多个粘附促进阻挡层中的相关方法。 封装过程也可以与其它半导体制造工艺一起实施。 这些处理产生包括导线的多层半导体电路,其中线路之间具有作为电介质的空气,被粘附促进障碍层或二者包围。
    • 7. 发明授权
    • Microprocessor having air as a dielectric and encapsulated lines
    • 具有空气作为电介质和封装线的微处理器
    • US06429522B2
    • 2002-08-06
    • US09742976
    • 2000-12-20
    • Kevin S. PetrarcaRebecca D. Mih
    • Kevin S. PetrarcaRebecca D. Mih
    • H01L2348
    • H01L21/7682H01L21/764
    • A multi-layer semiconductor circuit comprising a plurality of conductive lines having air as a dielectric between the sides of the conductive lines in a first layer and having a structurally supportive non-metal cap layer at least partially covering the top of the conductive lines in the first layer and separating the air dielectric and conductive lines in the first layer from any subsequent layers. In a multi-layer semiconductor circuit with a plurality of conductive lines, at least the top, the bottom, and the opposite sides of each line are encapsulated by an adhesion-promotion barrier layer, and the barrier layer on the top of each conductive line has an upper surface that is flush with (a) a planar lower surface of a cap layer over the barrier layer, (b) a planar upper surface of a dielectric layer between the conductive lines, or (c) a combination thereof. The dielectric layer between the conductive lines may be air.
    • 一种多层半导体电路,包括多个导电线,其在第一层中在导电线的侧面之间具有空气作为电介质,并且具有至少部分地覆盖导电线的顶部的结构上支撑的非金属覆盖层 第一层并且将第一层中的空气电介质和导电线与任何后续层分离。 在具有多个导电线的多层半导体电路中,每条线的至少顶部,底部和相对侧被粘附促进障碍层包围,并且每条导线顶部的阻挡层 具有与阻挡层上的(a)覆盖层的平坦下表面齐平的上表面,(b)导电线之间的介电层的平面上表面,或(c)其组合。 导线之间的电介质层可以是空气。