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1. 发明申请

US20120006442A1 CONFIGURABLE PLIABLE AIR DUCTS 有权
标题翻译：可配置的空气导管
公开(公告)号：US20120006442A1
公开(公告)日：2012-01-12
申请号：US12834703
申请日：2010-07-12
申请人： Kevin J. Gebke , Frank Heim , Michael Hermes , Michael A. Jacobson , Nicholas L. Kaufman , William A. Niehaus
发明人： Kevin J. Gebke , Frank Heim , Michael Hermes , Michael A. Jacobson , Nicholas L. Kaufman , William A. Niehaus
IPC分类号： F16L11/00 , B32B3/10
CPC分类号： F24F13/0218 , B32B1/08 , B32B3/10 , B32B5/02 , B32B2255/02 , B32B2255/26 , B32B2262/0276 , B32B2307/546 , B32B2419/00 , B32B2597/00 , F16L11/02 , F24F13/0281 , F24F13/06 , Y10T428/24273
摘要： In some example pliable air duct systems, inflatable ducts of various diameters and lengths are created by selectively assembling pre-existing stock pieces in different combinations. In some examples, the stock pieces include disconnectable longitudinal joints and disconnectable circumferential joints, wherein the longitudinal joints enable interconnecting multiple stock pieces to achieve a desired tube diameter, and the circumferential joints allow connecting multiple tube segments end-to-end to produce an air duct assembly of a desired length. To control the volume and/or the direction of air discharged from the duct, the duct assembly, in some examples, includes an adjustable register comprising a movable pliable sheet that overlies a discharge opening in a pliable sidewall of the duct. In some examples, the inflatable duct includes one or more cutout patterns on the duct's sidewall to provide guidance in creating a sidewall discharge opening of a proper size and location.
摘要翻译：在一些示例性的柔性空气管道系统中，通过以不同的组合选择性地组装预先存在的原料而产生各种直径和长度的可充气管道。在一些示例中，原料包括可断开的纵向接头和可断开的圆周接头，其中纵向接头使得能够互连多个坯料以获得期望的管直径，并且圆周接头允许端对端连接多个管段以产生空气所需长度的管道组件。为了控制从管道排出的空气的体积和/或方向，在一些示例中，管道组件包括可调节的寄存器，其包括位于管道的柔性侧壁中的排出开口的可移动的柔韧片。在一些示例中，可充气管道在管道的侧壁上包括一个或多个切口图案，以在产生适当尺寸和位置的侧壁排出口处提供引导。

2. 发明授权

US08808075B2 Configurable pliable air ducts 有权
标题翻译：可配置柔韧的导风管
公开(公告)号：US08808075B2
公开(公告)日：2014-08-19
申请号：US12834703
申请日：2010-07-12
申请人： Kevin J. Gebke , Frank Heim , Michael Hermes , Michael A. Jacobson , Nicholas L. Kaufmann , William A. Niehaus
发明人： Kevin J. Gebke , Frank Heim , Michael Hermes , Michael A. Jacobson , Nicholas L. Kaufmann , William A. Niehaus
IPC分类号： F24F7/00
CPC分类号： F24F13/0218 , B32B1/08 , B32B3/10 , B32B5/02 , B32B2255/02 , B32B2255/26 , B32B2262/0276 , B32B2307/546 , B32B2419/00 , B32B2597/00 , F16L11/02 , F24F13/0281 , F24F13/06 , Y10T428/24273
摘要： In some example pliable air duct systems, inflatable ducts of various diameters and lengths are created by selectively assembling pre-existing stock pieces in different combinations. In some examples, the stock pieces include disconnectable longitudinal joints and disconnectable circumferential joints, wherein the longitudinal joints enable interconnecting multiple stock pieces to achieve a desired tube diameter, and the circumferential joints allow connecting multiple tube segments end-to-end to produce an air duct assembly of a desired length. To control the volume and/or the direction of air discharged from the duct, the duct assembly, in some examples, includes an adjustable register comprising a movable pliable sheet that overlies a discharge opening in a pliable sidewall of the duct. In some examples, the inflatable duct includes one or more cutout patterns on the duct's sidewall to provide guidance in creating a sidewall discharge opening of a proper size and location.
摘要翻译：在一些示例性的柔性空气管道系统中，通过以不同的组合选择性地组装预先存在的原料而产生各种直径和长度的可充气管道。在一些示例中，原料包括可断开的纵向接头和可断开的圆周接头，其中纵向接头使得能够互连多个坯料以获得期望的管直径，并且圆周接头允许端对端连接多个管段以产生空气所需长度的管道组件。为了控制从管道排出的空气的体积和/或方向，在一些示例中，管道组件包括可调节的寄存器，其包括位于管道的柔性侧壁中的排出开口的可移动的柔韧片。在一些示例中，可充气管道在管道的侧壁上包括一个或多个切口图案，以在产生适当尺寸和位置的侧壁排出口处提供引导。

3. 发明申请

US20060097327A1 Low resistance semiconductor process and structures 有权
公开(公告)号：US20060097327A1
公开(公告)日：2006-05-11
申请号：US11305598
申请日：2005-12-16
申请人： Michael Hermes , Kunal Parekh
发明人： Michael Hermes , Kunal Parekh
IPC分类号： H01L29/76
CPC分类号： H01L21/76897 , H01L21/31111 , H01L21/31116 , H01L21/76889 , H01L21/823425 , H01L21/823475
摘要： A process for forming a semiconductor device comprises the steps of providing a semiconductor substrate assembly comprising a semiconductor wafer having an active area formed therein, a plurality of transistor gates each having a TEOS cap thereon and a pair of nitride spacers along each gate, a plurality of conductive plugs each contacting the wafer, and a BPSG layer overlying the transistor gates and contacting the active area. A portion of the BPSG layer is etched thereby exposing the TEOS caps. A portion of the BPSG layer remains on the active area after completion of the etch. Subsequently, a portion of the TEOS caps are removed to expose the transistor gates and a titanium silicide layer is formed simultaneously to contact the transistor gates and the plugs. An inventive structure resulting from the inventive process is also described.

4. 发明申请

US20050208745A1 Methods of forming a conductive contact through a dielectric 失效
标题翻译：通过电介质形成导电接触的方法
公开(公告)号：US20050208745A1
公开(公告)日：2005-09-22
申请号：US10804702
申请日：2004-03-19
申请人： Michael Hermes
发明人： Michael Hermes
IPC分类号： B24B1/00 , B24B7/19 , B24B7/30 , H01L21/44 , H01L21/4763 , H01L21/768
CPC分类号： H01L21/76804
摘要： A dielectric is formed over a node location on a semiconductor substrate. The dielectric comprises an insulative material over the node location, an insulative polish stop layer over the insulative material, and an insulator layer over the insulative polish stop layer. A contact opening is formed into the insulator layer, the insulative polish stop layer and the insulative material to proximate the node location. A conductive material is deposited over the insulator layer and to within the contact opening. The conductive material and the insulator layer are polished to at least a portion of the insulative polish stop layer. In one implementation and prior to depositing the conductive material, at least a portion of the contact opening is widened with an etching chemistry that is selective to widen it within the insulative material to a degree greater than any widening of the contact opening within the insulative polish stop layer.
摘要翻译：在半导体衬底上的节点位置上形成电介质。电介质包括在节点位置上的绝缘材料，绝缘材料上方的绝缘抛光停止层以及绝缘抛光停止层上的绝缘体层。接触开口形成为绝缘体层，绝缘抛光停止层和绝缘材料以接近节点位置。导电材料沉积在绝缘体层上并且在接触开口内。导电材料和绝缘体层被抛光到绝缘抛光止挡层的至少一部分上。在一个实施方案中，并且在沉积导电材料之前，接触开口的至少一部分用蚀刻化学品加宽，该蚀刻化学品可选择性地将其在绝缘材料内扩大到比绝缘抛光剂内的接触开口的任何加宽度停止层。

5. 发明授权

US06312986B1 Concentric container fin capacitor and method 失效
标题翻译：同心容器翅片电容器及方法
公开(公告)号：US06312986B1
公开(公告)日：2001-11-06
申请号：US09715001
申请日：2000-11-20
申请人： Michael Hermes
发明人： Michael Hermes
IPC分类号： H01L218242
CPC分类号： H01L28/87 , H01L27/10811 , H01L27/10855 , H01L28/55 , H01L28/91 , H01L28/92
摘要： A container capacitor and method having an internal concentric fin. In one embodiment, the finned capacitor is a stacked container capacitor in a dynamic random access memory circuit. The finned container capacitor provides a high storage capacitance without increasing the size of the cell. The capacitor fabrication requires only two depositions, a spacer etch and a wet etch step in addition to conventional container capacitor fabrication steps.
摘要翻译：一种具有内部同心翅片的容器电容器和方法。在一个实施例中，翅片电容器是动态随机存取存储器电路中的堆叠容器电容器。带翅片的容器电容器提供高存储电容，而不增加电池的尺寸。除了传统的容器电容器制造步骤之外，电容器制造仅需要两个沉积，间隔物蚀刻和湿蚀刻步骤。

6. 发明授权

US06188100B1 Concentric container fin capacitor 有权
标题翻译：同心集装箱散热片电容器
公开(公告)号：US06188100B1
公开(公告)日：2001-02-13
申请号：US09136892
申请日：1998-08-19
申请人： Michael Hermes
发明人： Michael Hermes
IPC分类号： H01L2976
CPC分类号： H01L28/87 , H01L27/10811 , H01L27/10855 , H01L28/55 , H01L28/91 , H01L28/92
摘要： A container capacitor and method having an internal concentric fin. In one embodiment, the finned capacitor is a stacked container capacitor in a dynamic random access memory circuit. The finned container capacitor provides a high storage capacitance without increasing the size of the cell. The capacitor fabrication requires only two depositions, a spacer etch and a wet etch step in addition to conventional container capacitor fabrication steps.
摘要翻译：一种具有内部同心翅片的容器电容器和方法。在一个实施例中，翅片电容器是动态随机存取存储器电路中的堆叠容器电容器。带翅片的容器电容器提供高存储电容，而不增加电池的尺寸。除了传统的容器电容器制造步骤之外，电容器制造仅需要两个沉积，间隔物蚀刻和湿蚀刻步骤。

7. 发明申请

US20060166489A1 Semiconductor constructions 审中-公开
公开(公告)号：US20060166489A1
公开(公告)日：2006-07-27
申请号：US11389633
申请日：2006-03-24
申请人： Michael Hermes
发明人： Michael Hermes
IPC分类号： H01L21/4763
CPC分类号： H01L21/76831 , H01L21/31116 , H01L21/76829 , H01L21/76897 , H01L27/10888 , H01L27/10891
摘要： The invention includes methods of forming openings extending through electrically insulative layers to electrically conductive materials. In an exemplary aspect, a substrate is provided which supports a stack and an electrical node. The stack comprises an electrically insulative cap over an electrically conductive material. An electrically insulative layer is formed over the stack and over the electrical node. A first etch is utilized to etch through the electrically insulative layer to the electrical node and to the electrically insulative cap. The first etch etches partially into the electrically insulative cap but does not etch entirely through the electrically insulative cap. A second etch is utilized after the first etch to etch entirely through the electrically insulative cap to the electrically conductive material of the stack.

8. 发明申请

US20060030145A1 Methods of forming a conductive contact through a dielectric 有权
标题翻译：通过电介质形成导电接触的方法
公开(公告)号：US20060030145A1
公开(公告)日：2006-02-09
申请号：US11211853
申请日：2005-08-24
申请人： Michael Hermes
发明人： Michael Hermes
IPC分类号： H01L21/4763
CPC分类号： H01L21/76804
摘要： A dielectric is formed over a node location on a semiconductor substrate. The dielectric comprises an insulative material over the node location, an insulative polish stop layer over the insulative material, and an insulator layer over the insulative polish stop layer. A contact opening is formed into the insulator layer, the insulative polish stop layer and the insulative material to proximate the node location. A conductive material is deposited over the insulator layer and to within the contact opening. The conductive material and the insulator layer are polished to at least a portion of the insulative polish stop layer. In one implementation and prior to depositing the conductive material, at least a portion of the contact opening is widened with an etching chemistry that is selective to widen it within the insulative material to a degree greater than any widening of the contact opening within the insulative polish stop layer.
摘要翻译：在半导体衬底上的节点位置上形成电介质。电介质包括在节点位置上的绝缘材料，绝缘材料上方的绝缘抛光停止层以及绝缘抛光停止层上的绝缘体层。接触开口形成为绝缘体层，绝缘抛光停止层和绝缘材料以接近节点位置。导电材料沉积在绝缘体层上并且在接触开口内。导电材料和绝缘体层被抛光到绝缘抛光止挡层的至少一部分上。在一个实施方案中，并且在沉积导电材料之前，接触开口的至少一部分用蚀刻化学品加宽，该蚀刻化学品可选择性地将其在绝缘材料内扩大到比绝缘抛光剂内的接触开口的任何加宽度停止层。

9. 发明申请

US20050095853A1 Semiconductor constructions 失效
标题翻译：半导体结构
公开(公告)号：US20050095853A1
公开(公告)日：2005-05-05
申请号：US10999769
申请日：2004-11-29
申请人： Michael Hermes
发明人： Michael Hermes
IPC分类号： H01L21/311 , H01L21/768 , H01L21/336 , H01L21/44
CPC分类号： H01L21/76831 , H01L21/31116 , H01L21/76829 , H01L21/76897 , H01L27/10888 , H01L27/10891
摘要： The invention includes methods of forming openings extending through electrically insulative layers to electrically conductive materials. In an exemplary aspect, a substrate is provided which supports a stack and an electrical node. The stack comprises an electrically insulative cap over an electrically conductive material. An electrically insulative layer is formed over the stack and over the electrical node. A first etch is utilized to etch through the electrically insulative layer to the electrical node and to the electrically insulative cap. The first etch etches partially into the electrically insulative cap but does not etch entirely through the electrically insulative cap. A second etch is utilized after the first etch to etch entirely through the electrically insulative cap to the electrically conductive material of the stack.
摘要翻译：本发明包括形成通过电绝缘层延伸到导电材料的开口的方法。在示例性方面，提供了支撑堆叠和电节点的衬底。叠层包括导电材料上的电绝缘帽。电绝缘层形成在堆叠上并在电节点上方。利用第一蚀刻将电绝缘层蚀刻到电节点和电绝缘帽。第一蚀刻部分地蚀刻到电绝缘帽中，但是不完全通过电绝缘帽蚀刻。在第一次蚀刻之后利用第二次蚀刻，以完全通过电绝缘帽蚀刻到叠层的导电材料。

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