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1. 发明授权

US5911834A Gas delivery system 失效
标题翻译：气体输送系统
公开(公告)号：US5911834A
公开(公告)日：1999-06-15
申请号：US751484
申请日：1996-11-18
申请人： Kevin Fairbairn , Hari K. Ponnekanti , David Cheung
发明人： Kevin Fairbairn , Hari K. Ponnekanti , David Cheung
IPC分类号： B01J4/00 , C23C14/56 , C23C16/44 , C23C16/455 , C23C16/54 , H01L21/00 , C23C16/00
CPC分类号： C23C16/45574 , B01J4/00 , C23C14/566 , C23C16/4402 , C23C16/4405 , C23C16/45565 , C23C16/45572 , C23C16/54 , H01L21/67017
摘要： The present invention provides a method and apparatus for delivering one or more process gases and one or more cleaning gases into one or more processing regions. The gas distribution system includes a gas inlet and a gas conduit, each disposed to deliver one or more gases into the chamber via a desired diffusing passage. Also, a gas delivery method and apparatus for splitting a gas feed into multiple feed lines is provided having a gas filter disposed upstream from a splitting coupling disposed in the line.
摘要翻译：本发明提供了一种将一种或多种工艺气体和一种或多种清洁气体输送到一个或多个处理区域中的方法和装置。气体分配系统包括气体入口和气体导管，每个气体导管和气体导管设置成经由期望的扩散通道将一种或多种气体输送到腔室中。此外，提供了一种用于将气体进料分离成多个进料管线的气体输送方法和装置，其具有设置在管线中的分离联接器的上游的气体过滤器。

2. 发明授权

US5844195A Remote plasma source 失效
标题翻译：远程等离子体源
公开(公告)号：US5844195A
公开(公告)日：1998-12-01
申请号：US751486
申请日：1996-11-18
申请人： Kevin Fairbairn , Hari K. Ponnekanti , David Cheung , Tsutomu Tanaka , Malcal Kelka
发明人： Kevin Fairbairn , Hari K. Ponnekanti , David Cheung , Tsutomu Tanaka , Malcal Kelka
IPC分类号： C23C14/56 , C23C16/50 , C23C16/511 , H01L21/00 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31 , B23K10/00
CPC分类号： H01L21/67017
摘要： The present invention provides a remote plasma source mountable on a process chamber and connectable on one end to a gas inletting system and on the other end to a gas distribution system disposed in a process chamber. Preferably, a conventional microwave generator is utilized to deliver microwaves into a remote chamber to excite a gas passed therethrough into an excited state.
摘要翻译：本发明提供一种远程等离子体源，其可安装在处理室上，并且一端可连接到气体入口系统，另一端可连接到设置在处理室中的气体分配系统。优选地，使用传统的微波发生器将微波传送到远程室中以将通过其中的气体激发到激发状态。

3. 发明授权

US6152070A Tandem process chamber 失效
公开(公告)号：US6152070A
公开(公告)日：2000-11-28
申请号：US751524
申请日：1996-11-18
申请人： Kevin Fairbairn , Jessica Barzilai , Hari K. Ponnekanti , W. N. (Nick) Taylor
发明人： Kevin Fairbairn , Jessica Barzilai , Hari K. Ponnekanti , W. N. (Nick) Taylor
IPC分类号： C23C14/00 , C23C16/44 , C23C16/54 , H01L21/00 , H01L21/205 , H01L21/31 , C23C16/00
CPC分类号： H01L21/67167 , C23C16/4412 , C23C16/54 , H01L21/67017 , H01L21/67173 , H01L21/6719 , H01L21/67196 , H01L21/67201
摘要： The present invention provides an apparatus for vacuum processing generally comprising an enclosure having a plurality of isolated chambers formed therein, a gas distribution assembly disposed in each processing chamber, a gas source connected to the plurality of isolated chambers, and a power supply connected to each gas distribution assembly.

4. 发明授权

US6082950A Front end wafer staging with wafer cassette turntables and on-the-fly wafer center finding 失效
标题翻译：具有晶圆盒转盘的前端晶片分级和即时晶片中心发现
公开(公告)号：US6082950A
公开(公告)日：2000-07-04
申请号：US752463
申请日：1996-11-18
申请人： Allen Altwood , Kelly Colborne , Kevin Fairbairn , Christopher Lane , Hari K. Ponnekanti , Satish Sundar
发明人： Allen Altwood , Kelly Colborne , Kevin Fairbairn , Christopher Lane , Hari K. Ponnekanti , Satish Sundar
IPC分类号： H01L21/677 , B65H5/08
CPC分类号： H01L21/67778 , H01L21/67742 , H01L21/67745 , Y10S414/137
摘要： A front end staging method and apparatus is provided to introduce and remove a set of wafers from a vacuum processing system. The system generally comprises a support platform, one or more wafer cassette turntables disposed on the platform, a wafer handler disposed adjacent the turntables, a wafer center finding device and a filter disposed to control particles in the vicinity of the wafers. The wafer cassette turntables are rotatably mounted to the support in the preferred embodiment. The processing system may also include one or more processing chambers, where each processing chamber defines a plurality of isolated processing regions therein. The wafer center finding device may include an optical sensor system including optimal emitters aligned with optical sensors.
摘要翻译：提供了一种前端分级方法和装置，以从真空处理系统引入和移除一组晶片。该系统通常包括支撑平台，设置在平台上的一个或多个晶片盒转盘，与转台相邻设置的晶片处理器，晶片中心发现装置和设置成控制晶片附近的颗粒的滤光器。在优选实施例中，晶片盒转盘可旋转地安装到支撑件上。处理系统还可以包括一个或多个处理室，其中每个处理室在其中限定多个隔离的处理区域。晶片中心发现装置可以包括光学传感器系统，其包括与光学传感器对准的最佳发射器。

5. 发明授权

US07655092B2 Tandem process chamber 失效
标题翻译：串联处理室
公开(公告)号：US07655092B2
公开(公告)日：2010-02-02
申请号：US10680656
申请日：2003-10-06
申请人： Kevin Fairbairn , Jessica Barzilai , Hari K. Ponnekanti , W. N. (Nick) Taylor
发明人： Kevin Fairbairn , Jessica Barzilai , Hari K. Ponnekanti , W. N. (Nick) Taylor
IPC分类号： C23C16/00 , H01L21/00
CPC分类号： H01L21/67167 , C23C16/4412 , C23C16/54 , H01L21/67017 , H01L21/67173 , H01L21/6719 , H01L21/67196 , H01L21/67201
摘要： The present invention provides an apparatus for vacuum processing generally comprising an enclosure having a plurality of isolated chambers formed therein, a gas distribution assembly disposed in each processing chamber, a gas source connected to the plurality of isolated chambers, and a power supply connected to each gas distribution assembly.
摘要翻译：本发明提供了一种用于真空处理的设备，其通常包括具有形成在其中的多个隔离室的外壳，设置在每个处理室中的气体分配组件，连接到多个隔离室的气源，以及连接到每个气体分配组件

6. 发明授权

US06635115B1 Tandem process chamber 有权
标题翻译：串联处理室
公开(公告)号：US06635115B1
公开(公告)日：2003-10-21
申请号：US09575025
申请日：2000-05-19
申请人： Kevin Fairbairn , Jessica Barzilai , Hari K. Ponnekanti , W. N. (Nick) Taylor
发明人： Kevin Fairbairn , Jessica Barzilai , Hari K. Ponnekanti , W. N. (Nick) Taylor
IPC分类号： C23C1600
CPC分类号： H01L21/67167 , C23C16/4412 , C23C16/54 , H01L21/67017 , H01L21/67173 , H01L21/6719 , H01L21/67196 , H01L21/67201
摘要： The present invention provides an apparatus for vacuum processing generally comprising an enclosure having a plurality of isolated chambers formed therein, a gas distribution assembly disposed in each processing chamber, a gas source connected to the plurality of isolated chambers, and a power supply connected to each gas distribution assembly.
摘要翻译：本发明提供了一种用于真空处理的设备，其通常包括具有形成在其中的多个隔离室的外壳，设置在每个处理室中的气体分配组件，连接到多个隔离室的气源，以及连接到每个气体分配组件

7. 发明授权

US6077157A Process chamber exhaust system 失效
标题翻译：过程室排气系统
公开(公告)号：US6077157A
公开(公告)日：2000-06-20
申请号：US749613
申请日：1996-11-18
申请人： Kevin Fairbairn , Hari K. Ponnekanti
发明人： Kevin Fairbairn , Hari K. Ponnekanti
IPC分类号： C23C14/00 , B05C11/08 , C23C16/44 , C23C16/54 , H01L21/00 , H01L21/205 , H01L21/31 , B05G15/00
CPC分类号： H01L21/67167 , C23C16/4412 , C23C16/54 , H01L21/67017 , H01L21/6719 , H01L21/67196 , H01L21/67201 , B05C11/08
摘要： A method and apparatus for exhausting gases out of multiple processing regions is provided and generally comprises first and second pumping channels disposed in first and second processing regions and connected to a pump via a common exhaust port.
摘要翻译：提供了用于从多个处理区域排出气体的方法和装置，并且通常包括设置在第一和第二处理区域中并通过公共排气口连接到泵的第一和第二泵送通道。

8. 发明授权

US5855681A Ultra high throughput wafer vacuum processing system 失效
标题翻译：超高产量晶圆真空处理系统
公开(公告)号：US5855681A
公开(公告)日：1999-01-05
申请号：US751485
申请日：1996-11-18
申请人： Dan Maydan , Sasson Somekh , Ashok Sinha , Kevin Fairbairn , Christopher Lane , Kelly Colborne , Hari K. Ponnekanti , W. N.(Nick) Taylor
发明人： Dan Maydan , Sasson Somekh , Ashok Sinha , Kevin Fairbairn , Christopher Lane , Kelly Colborne , Hari K. Ponnekanti , W. N.(Nick) Taylor
IPC分类号： H01L21/00 , H01L21/205 , H01L21/677 , H01L21/687 , C23C16/00 , C23F1/02
CPC分类号： H01L21/67167 , H01L21/6719 , H01L21/67196 , H01L21/67201 , H01L21/67742 , H01L21/68707 , H01L21/68785
摘要： The present invention generally provides a cassette-to-cassette vacuum processing system which concurrently processes multiple wafers and combines the advantages of single wafer process chambers and multiple wafer handling for high quality wafer processing, high wafer throughput and reduced footprint. In accordance with one aspect of the invention, the system is preferably a staged vacuum system which generally includes a loadlock chamber for introducing wafers into the system and which also provides wafer cooling following processing, a transfer chamber for housing a wafer handler, and one or more processing chambers each having two or more processing regions which are isolatable from each other and preferably share a common gas supply and a common exhaust pump. The processing regions also preferably include separate gas distribution assemblies and RF power sources to provide a uniform plasma density over a wafer surface in each processing region. The processing chambers are configured to allow multiple, isolated processes to be performed concurrently in at least two processing regions so that at least two wafers can be processed simultaneously in a chamber with a high degree of process control provided by shared gas sources, shared exhaust systems, separate gas distribution assemblies, separate RF power sources, and separate temperature control systems.
摘要翻译：本发明通常提供一种盒式到盒式真空处理系统，其同时处理多个晶片，并且结合了单晶片处理室和多个晶片处理的优点，用于高质量晶片处理，高晶圆吞吐量和减小的占地面积。根据本发明的一个方面，该系统优选地是分级真空系统，其通常包括用于将晶片引入系统中并且还提供后续处理的晶片冷却的负载锁定室，用于容纳晶片处理器的传送室，以及一个或更多的处理室具有可彼此隔离的两个或更多个处理区域，并且优选地共享公共气体供应源和公共排气泵。处理区域还优选地包括单独的气体分配组件和RF功率源，以在每个处理区域中在晶片表面上提供均匀的等离子体密度。处理室被配置为允许在至少两个处理区域中同时执行多个隔离过程，使得可以在室内同时处理至少两个晶片，具有由共用气源提供的高程度的过程控制，共用排气系统，独立的气体分配组件，独立的射频电源和独立的温度控制系统。

9. 发明授权

US06831284B2 Large area source for uniform electron beam generation 失效
公开(公告)号：US06831284B2
公开(公告)日：2004-12-14
申请号：US10301508
申请日：2002-11-21
申请人： Alexandros T. Demos , Hari K. Ponnekanti , Jun Zhao , Helen R. Armer , William R. Livesay , Scott C. Woods
发明人： Alexandros T. Demos , Hari K. Ponnekanti , Jun Zhao , Helen R. Armer , William R. Livesay , Scott C. Woods
IPC分类号： G21K502
CPC分类号： H01J37/06 , H01J37/317 , H01J2237/316
摘要： An electron beam apparatus that includes a vacuum chamber, a large-area cathode disposed in the vacuum chamber, and a first power supply connected to the cathode. The first power supply is configured to apply a negative voltage to the cathode sufficient to cause the cathode to emit electrons toward a substrate disposed in the vacuum chamber. The electron beam apparatus further includes an anode positioned between the large-area cathode and the substrate. The anode is made from aluminum. The electron beam apparatus further includes a second power supply connected to the anode, wherein the second power supply is configured to apply a voltage to the anode that is positive relative to the voltage applied to the cathode.

10. 发明授权

US08859324B2 Methods of manufacturing solar cell devices 有权
标题翻译：制造太阳能电池装置的方法
公开(公告)号：US08859324B2
公开(公告)日：2014-10-14
申请号：US13739390
申请日：2013-01-11
申请人： Michael P. Stewart , Prabhat Kumar , Kapila P. Wijekoon , Lin Zhang , Hari K. Ponnekanti
发明人： Michael P. Stewart , Prabhat Kumar , Kapila P. Wijekoon , Lin Zhang , Hari K. Ponnekanti
IPC分类号： H01L21/00 , H01L31/0224
CPC分类号： H01L31/022425 , H01L31/068 , H01L31/1804 , Y02E10/50 , Y02E10/547 , Y02P70/521
摘要： Embodiments of the present invention are directed to a process for making solar cells. Particularly, embodiments of the invention provide simultaneously co-firing (e.g., thermally processing) metal layers disposed both on a first and a second surface of a solar cell substrate to complete the metallization process in one step. By doing so, both the metal layers formed on the first and the second surfaces of the solar cell substrate are co-fired (e.g., simultaneously thermally processed), thereby eliminating manufacturing complexity, cycle time and cost to produce the solar cell device. Embodiments of the invention may also provide a method and solar cell structure that requires a reduced amount of a metallization paste on a rear surface of the substrate to form a rear surface contact structure and, thus, reduce the cost of the formed solar cell device.
摘要翻译：本发明的实施例涉及制造太阳能电池的方法。特别地，本发明的实施例同时提供同时在太阳能电池基板的第一和第二表面上同时共烧（例如热处理）金属层，以在一个步骤中完成金属化处理。通过这样做，形成在太阳能电池基板的第一表面和第二表面上的金属层被共烧（例如，同时热处理），从而消除了制造太阳能电池装置的制造复杂性，周期时间和成本。本发明的实施例还可以提供一种方法和太阳能电池结构，其需要在基板的后表面上减少金属化浆料的量以形成后表面接触结构，并因此降低形成的太阳能电池器件的成本。

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