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1. 发明授权

US09102033B2 Apparatus and method for target thickness and surface profile uniformity control of multi-head chemical mechanical polishing process 有权
标题翻译：多头化学机械抛光工艺的目标厚度和表面轮廓均匀性控制的装置和方法
公开(公告)号：US09102033B2
公开(公告)日：2015-08-11
申请号：US12953584
申请日：2010-11-24
申请人： Keung Hui , Jin-Ning Sung , Huang Soon Kang , Yen-Di Tsen , Jong-I Mou
发明人： Keung Hui , Jin-Ning Sung , Huang Soon Kang , Yen-Di Tsen , Jong-I Mou
IPC分类号： B24B1/00 , B24B51/00 , B24B37/005 , B24B37/04 , B24B37/10 , B24B49/02 , H01L21/66
CPC分类号： H01L21/30625 , B24B37/005 , B24B37/042 , B24B37/107 , B24B49/02 , B24B49/04 , B24B49/16 , B24B51/00 , H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： An apparatus and method for providing target thickness and surface profile uniformity control of a multi-head chemical mechanical polishing (CMP) process is disclosed. An exemplary method includes providing at least two wafers; determining a surface profile of each of the at least two wafers; determining an operation mode for a chemical mechanical polishing (CMP) process based on the surface profiles of the at least two wafers; determining a CMP polishing recipe for each of the at least two wafers based on the operation mode; and performing the CMP process on the at least two wafers based on the determined CMP polishing recipes.
摘要翻译：公开了一种用于提供多头化学机械抛光（CMP）工艺的目标厚度和表面轮廓均匀性控制的装置和方法。一种示例性方法包括提供至少两个晶片; 确定所述至少两个晶片中的每一个的表面轮廓; 基于所述至少两个晶片的表面轮廓确定用于化学机械抛光（CMP）工艺的操作模式; 基于所述操作模式确定所述至少两个晶片中的每一个的CMP抛光配方; 以及基于所确定的CMP抛光配方在所述至少两个晶片上执行CMP处理。

2. 发明申请

US20120129431A1 APPARATUS AND METHOD FOR TARGET THICKNESS AND SURFACE PROFILE UNIFORMITY CONTROL OF MULTI-HEAD CHEMICAL MECHANICAL POLISHING PROCESS 有权
标题翻译：目标厚度和表面轮廓的设备和方法多头化学机械抛光过程的均匀性控制
公开(公告)号：US20120129431A1
公开(公告)日：2012-05-24
申请号：US12953584
申请日：2010-11-24
申请人： KEUNG HUI , Jin-Ning Sung , Huang Soon Kang , Yen-Di Tsen , Jong-I Mou
发明人： KEUNG HUI , Jin-Ning Sung , Huang Soon Kang , Yen-Di Tsen , Jong-I Mou
IPC分类号： B24B1/00 , B24B51/00
CPC分类号： H01L21/30625 , B24B37/005 , B24B37/042 , B24B37/107 , B24B49/02 , B24B49/04 , B24B49/16 , B24B51/00 , H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： An apparatus and method for providing target thickness and surface profile uniformity control of a multi-head chemical mechanical polishing (CMP) process is disclosed. An exemplary method includes providing at least two wafers; determining a surface profile of each of the at least two wafers; determining an operation mode for a chemical mechanical polishing (CMP) process based on the surface profiles of the at least two wafers; determining a CMP polishing recipe for each of the at least two wafers based on the operation mode; and performing the CMP process on the at least two wafers based on the determined CMP polishing recipes.
摘要翻译：公开了一种用于提供多头化学机械抛光（CMP）工艺的目标厚度和表面轮廓均匀性控制的装置和方法。一种示例性方法包括提供至少两个晶片; 确定所述至少两个晶片中的每一个的表面轮廓; 基于所述至少两个晶片的表面轮廓确定用于化学机械抛光（CMP）工艺的操作模式; 基于所述操作模式确定所述至少两个晶片中的每一个的CMP抛光配方; 以及基于所确定的CMP抛光配方在所述至少两个晶片上执行CMP处理。

3. 发明授权

US08549012B2 Processing exception handling 有权
标题翻译：处理异常处理
公开(公告)号：US08549012B2
公开(公告)日：2013-10-01
申请号：US12778855
申请日：2010-05-12
申请人： Po-Feng Tsai , Jin-Ning Sung , Yen-Di Tsen , Jo Fei Wang , Jong-I Mou
发明人： Po-Feng Tsai , Jin-Ning Sung , Yen-Di Tsen , Jo Fei Wang , Jong-I Mou
IPC分类号： G06F7/00 , G06F17/30
CPC分类号： G06F7/00 , G05B19/41865 , G05B2219/31352 , G05B2219/33303 , G06F17/30
摘要： In accordance with an embodiment, a method for exception handling comprises accessing an exception type for an exception, filtering historical data based on at least one defined criterion to provide a data train comprising data sets, assigning a weight to each data set, and providing a current control parameter. The data sets each comprise a historical condition and a historical control parameter, and the weight assigned to each data set is based on each historical condition. The current control parameter is provided using the weight and the historical control parameter for each data set.
摘要翻译：根据实施例，用于异常处理的方法包括访问异常的异常类型，基于至少一个定义的标准过滤历史数据，以提供包括数据集的数据队列，为每个数据集分配权重，以及提供电流控制参数。数据集各自包含历史条件和历史控制参数，并且分配给每个数据集的权重基于每个历史条件。使用每个数据集的权重和历史控制参数提供当前的控制参数。

4. 发明申请

US20110282885A1 Processing Exception Handling 有权
标题翻译：处理异常处理
公开(公告)号：US20110282885A1
公开(公告)日：2011-11-17
申请号：US12778855
申请日：2010-05-12
申请人： Po-Feng Tsai , Jin-Ning Sung , Yen-Di Tsen , Jo Fei Wang , Jong-I Mou
发明人： Po-Feng Tsai , Jin-Ning Sung , Yen-Di Tsen , Jo Fei Wang , Jong-I Mou
IPC分类号： G06F17/30
CPC分类号： G06F7/00 , G05B19/41865 , G05B2219/31352 , G05B2219/33303 , G06F17/30
摘要： In accordance with an embodiment, a method for exception handling comprises accessing an exception type for an exception, filtering historical data based on at least one defined criterion to provide a data train comprising data sets, assigning a weight to each data set, and providing a current control parameter. The data sets each comprise a historical condition and a historical control parameter, and the weight assigned to each data set is based on each historical condition. The current control parameter is provided using the weight and the historical control parameter for each data set.
摘要翻译：根据实施例，用于异常处理的方法包括访问异常的异常类型，基于至少一个定义的标准过滤历史数据，以提供包括数据集的数据队列，为每个数据集分配权重，以及提供电流控制参数。数据集各自包含历史条件和历史控制参数，并且分配给每个数据集的权重基于每个历史条件。使用每个数据集的权重和历史控制参数提供当前的控制参数。

5. 发明授权

US09477219B2 Dynamic compensation in advanced process control 有权
标题翻译：高级过程控制中的动态补偿
公开(公告)号：US09477219B2
公开(公告)日：2016-10-25
申请号：US12731348
申请日：2010-03-25
申请人： Chih-Wei Hsu , Jin-Ning Sung , Shin-Rung Lu , Jong-I Mou
发明人： Chih-Wei Hsu , Jin-Ning Sung , Shin-Rung Lu , Jong-I Mou
IPC分类号： G05B19/418
CPC分类号： G05B19/41875 , G05B2219/32017 , G05B2219/32189 , G05B2219/45031 , Y02P90/22
摘要： A method of semiconductor fabrication is provided. The method includes providing a model for a device parameter of a wafer as a function of first and second process parameters. The first and second process parameters correspond to different wafer characteristics, respectively. The method includes deriving target values of the first and second process parameters based on a specified target value of the device parameter. The method includes performing a first fabrication process in response to the target value of the first process parameter. The method includes measuring an actual value of the first process parameter thereafter. The method includes updating the model using the actual value of the first process parameter. The method includes deriving a revised target value of the second process parameter using the updated model. The method includes performing a second fabrication process in response to the revised target value of the second process parameter.
摘要翻译：提供了一种半导体制造方法。该方法包括提供晶片的器件参数的模型作为第一和第二工艺参数的函数。第一和第二工艺参数分别对应于不同的晶片特性。该方法包括基于设备参数的指定目标值导出第一和第二处理参数的目标值。该方法包括响应于第一过程参数的目标值执行第一制造过程。该方法包括此后测量第一处理参数的实际值。该方法包括使用第一过程参数的实际值更新模型。该方法包括使用更新的模型导出第二过程参数的修正目标值。该方法包括响应于修改的第二过程参数的目标值执行第二制造过程。

6. 发明授权

US08394719B2 System and method for implementing multi-resolution advanced process control 有权
标题翻译：实现多分辨率高级过程控制的系统和方法
公开(公告)号：US08394719B2
公开(公告)日：2013-03-12
申请号：US13106711
申请日：2011-05-12
申请人： Andy Tsen , Jin-Ning Sung , Po-Feng Tsai , Jong-I Mou , Yen-Wei Cheng
发明人： Andy Tsen , Jin-Ning Sung , Po-Feng Tsai , Jong-I Mou , Yen-Wei Cheng
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L22/20 , G05B19/41875 , H01L22/12 , Y02P90/22 , Y02P90/26
摘要： System and method for implementing multi-resolution advanced process control (“APC”) are described. One embodiment is a method including obtaining low resolution metrology data and high resolution metrology data related to a process module for performing a process on the wafer. A process variable of the process is modeled as a function of the low resolution metrology data to generate a low-resolution process model and the process variable is modeled as a function of the high resolution metrology data to generate a high-resolution process model. The method further includes calibrating the low resolution process model; combining the calibrated low resolution process model with the high resolution process model to generate a multi-resolution process model that models the process variable as a function of both the low resolution metrology data and the high resolution metrology data; and analyzing a response of the multi-resolution process model and the low and high resolution metrology data to control performance of a process module.
摘要翻译：描述了实现多分辨率高级过程控制（APC）的系统和方法。一个实施例是一种方法，包括获得与用于在晶片上执行处理的处理模块相关的低分辨率度量数据和高分辨率度量数据。该过程的过程变量被模型化为低分辨率度量数据的函数，以生成低分辨率过程模型，并且将过程变量建模为高分辨率度量数据的函数以生成高分辨率过程模型。该方法还包括校准低分辨率过程模型; 将校准的低分辨率过程模型与高分辨率过程模型相结合，以生成多分辨率过程模型，其将过程变量建模为低分辨率度量数据和高分辨率度量数据的函数; 并分析多分辨率过程模型和低分辨率和高分辨率度量数据的响应，以控制过程模块的性能。

7. 发明申请

US20100255613A1 SYSTEM AND METHOD FOR IMPLEMENTING MULTI-RESOLUTION ADVANCED PROCESS CONTROL 有权
标题翻译：用于实施多分辨率高级过程控制的系统和方法
公开(公告)号：US20100255613A1
公开(公告)日：2010-10-07
申请号：US12416595
申请日：2009-04-01
申请人： Andy Tsen , Jin-Ning Sung , Po-Feng Tsai , Jong-I Mou
发明人： Andy Tsen , Jin-Ning Sung , Po-Feng Tsai , Jong-I Mou
IPC分类号： H01L21/66 , H01L21/306
CPC分类号： G05B19/41875 , H01L22/12 , H01L22/20 , Y02P90/22 , Y02P90/26
摘要： System and method for implementing multi-resolution advanced process control (“APC”) are described. One embodiment is a method for fabricating ICs from a semiconductor wafer comprising performing a first process on the semiconductor wafer; taking a first measurement indicative of an accuracy with which the first process was performed; and using the first measurement to generate metrology calibration data, wherein the metrology calibration data includes an effective portion and a non-effective portion. The method further comprises removing the non-effective portion from the metrology calibration data and modeling the effective portion with a metrology calibration model; combining the metrology calibration model with a first process model to generate a multi-resolution model, wherein the first process model models an input-output relationship of the first process; and analyzing a response of the multi-resolution model and second measurement data to control performance a second process.
摘要翻译：描述了用于实现多分辨率高级过程控制（“APC”）的系统和方法。一个实施例是一种用于从半导体晶片制造IC的方法，包括在半导体晶片上执行第一工艺; 进行第一次测量，表明执行第一个处理的精度; 以及使用所述第一测量来产生计量学校准数据，其中所述计量学校准数据包括有效部分和非有效部分。该方法还包括从计量校准数据中去除非有效部分并用计量校准模型对有效部分进行建模; 将所述计量校准模型与第一过程模型结合以生成多分辨率模型，其中所述第一过程模型对所述第一过程的输入 - 输出关系建模; 以及分析所述多分辨率模型和第二测量数据的响应以控制第二过程的性能。

8. 发明申请

US20110238197A1 DYNAMIC COMPENSATION IN ADVANCED PROCESS CONTROL 有权
标题翻译：高级过程控制中的动态补偿
公开(公告)号：US20110238197A1
公开(公告)日：2011-09-29
申请号：US12731348
申请日：2010-03-25
申请人： Chih-Wei Hsu , Jin-Ning Sung , Shin-Rung Lu , Jong-I Mou
发明人： Chih-Wei Hsu , Jin-Ning Sung , Shin-Rung Lu , Jong-I Mou
IPC分类号： G05B13/04 , G06F17/00
CPC分类号： G05B19/41875 , G05B2219/32017 , G05B2219/32189 , G05B2219/45031 , Y02P90/22
摘要： A method of semiconductor fabrication is provided. The method includes providing a model for a device parameter of a wafer as a function of first and second process parameters. The first and second process parameters correspond to different wafer characteristics, respectively. The method includes deriving target values of the first and second process parameters based on a specified target value of the device parameter. The method includes performing a first fabrication process in response to the target value of the first process parameter. The method includes measuring an actual value of the first process parameter thereafter. The method includes updating the model using the actual value of the first process parameter. The method includes deriving a revised target value of the second process parameter using the updated model. The method includes performing a second fabrication process in response to the revised target value of the second process parameter.
摘要翻译：提供了一种半导体制造方法。该方法包括提供晶片的器件参数的模型作为第一和第二工艺参数的函数。第一和第二工艺参数分别对应于不同的晶片特性。该方法包括基于设备参数的指定目标值导出第一和第二处理参数的目标值。该方法包括响应于第一过程参数的目标值执行第一制造过程。该方法包括此后测量第一处理参数的实际值。该方法包括使用第一过程参数的实际值更新模型。该方法包括使用更新的模型导出第二过程参数的修正目标值。该方法包括响应于修改的第二过程参数的目标值执行第二制造过程。

9. 发明授权

US07951615B2 System and method for implementing multi-resolution advanced process control 有权
标题翻译：实现多分辨率高级过程控制的系统和方法
公开(公告)号：US07951615B2
公开(公告)日：2011-05-31
申请号：US12416595
申请日：2009-04-01
申请人： Andy Tsen , Jin-Ning Sung , Po-Feng Tsai , Jong-I Mou
发明人： Andy Tsen , Jin-Ning Sung , Po-Feng Tsai , Jong-I Mou
IPC分类号： H01L21/66 , G01R31/26
CPC分类号： G05B19/41875 , H01L22/12 , H01L22/20 , Y02P90/22 , Y02P90/26
摘要： One embodiment is a method for fabricating ICs from a semiconductor wafer. The method includes performing a first process on the semiconductor wafer; taking a first measurement indicative of an accuracy with which the first process was performed; and using the first measurement to generate metrology calibration data, wherein the metrology calibration data includes an effective portion and a non-effective portion. The method further includes removing the non-effective portion from the metrology calibration data and modeling the effective portion with a metrology calibration model; combining the metrology calibration model with a first process model to generate a multi-resolution model, wherein the first process model models an input-output relationship of the first process; and analyzing a response of the multi-resolution model and second measurement data to control performance a second process.
摘要翻译：一个实施例是用于从半导体晶片制造IC的方法。该方法包括在半导体晶片上执行第一处理; 进行第一次测量，表明执行第一个处理的精度; 以及使用所述第一测量来产生计量学校准数据，其中所述计量学校准数据包括有效部分和非有效部分。该方法还包括从计量校准数据中去除非有效部分并用计量校准模型对有效部分进行建模; 将所述计量校准模型与第一过程模型结合以生成多分辨率模型，其中所述第一过程模型对所述第一过程的输入 - 输出关系建模; 以及分析所述多分辨率模型和第二测量数据的响应以控制第二过程的性能。

10. 发明授权

US08437870B2 System and method for implementing a virtual metrology advanced process control platform 有权
标题翻译：实现虚拟计量先进过程控制平台的系统和方法
公开(公告)号：US08437870B2
公开(公告)日：2013-05-07
申请号：US12478956
申请日：2009-06-05
申请人： Po-Feng Tsai , Andy Tsen , Jin-Ning Sung
发明人： Po-Feng Tsai , Andy Tsen , Jin-Ning Sung
IPC分类号： G06F17/50
CPC分类号： G01R31/2894 , H01L22/12 , H01L22/20
摘要： System and method for implementing a VM APC platform are described. In one embodiment, the VM APC system comprises a process tool for processing a plurality of wafers, a metrology tool for measuring a sample wafer of the plurality of wafers and generating actual metrology data therefor, and a VM model for predicting metrology data for each of the plurality of wafers. The actual metrology data is received from the metrology tool and used to update the VM model. Key variables of the virtual metrology model are updated only in response to a determination that the VM model is inaccurate and parameters of the VM model are updated responsive to receipt of the actual metrology data for the sample wafer of the plurality of wafers. The system also includes an APC controller for receiving the predicted metrology data and the actual metrology data and controlling an operation of the process tool based on the received data.
摘要翻译：描述了实现VM APC平台的系统和方法。在一个实施例中，VM APC系统包括用于处理多个晶片的处理工具，用于测量多个晶片中的样品晶片并产生其实际测量数据的计量工具，以及用于预测每个晶片的测量数据的VM模型多个晶片。实际计量数据从计量工具中接收并用于更新VM模型。虚拟测量模型的关键变量仅在响应于确定VM模型不准确并且响应于接收到多个晶片的样本晶片的实际测量数据来更新VM模型的参数而被更新。该系统还包括用于接收预测计量数据和实际计量数据的APC控制器，并且基于接收到的数据来控制处理工具的操作。

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