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1. 发明申请

US20090133920A1 Printed circuit board and manufacturing method of the same 审中-公开
标题翻译：印刷电路板及其制造方法相同
公开(公告)号：US20090133920A1
公开(公告)日：2009-05-28
申请号：US12216374
申请日：2008-07-02
申请人： Keun-Ho Kim , Dek-Gin Yang , Yun-Seok Hwang , Chan-Yeup Chung , Young-Ho Lee , Cheol-Ho Heo
发明人： Keun-Ho Kim , Dek-Gin Yang , Yun-Seok Hwang , Chan-Yeup Chung , Young-Ho Lee , Cheol-Ho Heo
IPC分类号： H05K1/11 , H05K3/10
CPC分类号： H05K3/4641 , H05K3/429 , H05K3/44 , H05K3/4623 , H05K2201/0347 , H05K2201/09554 , Y10T29/49165
摘要： A printed circuit board and a manufacturing method of the same. The method includes forming a circuit board by selectively positioning a heat release layer among multiple insulation layers that have circuit patterns formed on their surfaces, perforating a through-hole that penetrates through one side and the other side of the circuit board, forming a metal film over the heat release layer exposed at an inner wall surface of the through-hole, and forming a plating layer by depositing a conductive metal over an inner wall of the through-hole. By having the heat release layer selectively inserted inside the circuit board, the heat releasing effect may be improved, and the bending strength may be increased. Moreover, a reliable electrical connection can be implemented between the heat release layer and the circuit pattern, making it possible to utilize the heat release layer as a power supply layer or a ground layer.
摘要翻译：一种印刷电路板及其制造方法。该方法包括通过在其表面上形成有电路图案的多个绝缘层中选择性地定位放热层来形成电路板，穿透穿过电路板的一侧和另一侧的通孔，形成金属膜在通孔的内壁表面露出的放热层上，通过在通孔的内壁上沉积导电金属而形成镀层。通过使散热层选择性地插入电路板内，可以提高散热效果，并且可以提高弯曲强度。此外，可以在散热层和电路图案之间实现可靠的电连接，使得可以将散热层用作电源层或接地层。

2. 发明授权

US07981317B2 Composition for surface modification of a heat sink and method for surface treatment of the heat sink for printed circuit boards using the same 有权
标题翻译：用于散热器表面改性的组合物和使用其的印刷电路板的散热器的表面处理方法
公开(公告)号：US07981317B2
公开(公告)日：2011-07-19
申请号：US12235034
申请日：2008-09-22
申请人： Young-Ho Lee , Steve Chun , Dek-Gin Yang , Chan-Yeup Chung , Yun-Seok Hwang , Keun-Ho Kim
发明人： Young-Ho Lee , Steve Chun , Dek-Gin Yang , Chan-Yeup Chung , Yun-Seok Hwang , Keun-Ho Kim
IPC分类号： C09K13/00
CPC分类号： H05K3/385 , H05K3/389 , H05K3/44 , H05K2203/0307 , H05K2203/0315
摘要： The present invention provides a composition for surface modification of a heat sink, the composition including: 0.01 to 10 parts by weight of an organic titanium compound; 0.01 to 5 parts by weight of an organic silane compound; 0.1 to 10 parts by weight of an organic acid; 0.01 to 5 parts by weight of a sequestering agent; and 0.1 to 10 parts by weight of a buffer with respect to 100 parts by weight of distilled water. The composition of the present invention provides excellent adhesion strength with prepreg, and improve heat releasing performance.
摘要翻译：本发明提供了一种用于散热器表面改性的组合物，该组合物包括：0.01至10重量份的有机钛化合物; 0.01〜5重量份的有机硅烷化合物; 0.1〜10重量份的有机酸; 0.01〜5重量份的螯合剂; 相对于100重量份的蒸馏水为0.1〜10重量份的缓冲液。本发明的组合物与预浸料提供优异的粘合强度，并且提高散热性能。

3. 发明授权

US09117654B2 Methods of forming fine patterns in integrated circuit devices 有权
标题翻译：在集成电路器件中形成精细图案的方法
公开(公告)号：US09117654B2
公开(公告)日：2015-08-25
申请号：US13470773
申请日：2012-05-14
申请人： Young-Ho Lee , Jae-Kwan Park , Jae-Hwang Sim , Sang-Yong Park
发明人： Young-Ho Lee , Jae-Kwan Park , Jae-Hwang Sim , Sang-Yong Park
IPC分类号： H01L21/467 , H01L27/02 , H01L21/033 , H01L21/308 , H01L21/3213 , H01L21/762 , H01L23/544 , H01L27/115 , H01L27/105
CPC分类号： H01L27/0207 , H01L21/0332 , H01L21/0337 , H01L21/3081 , H01L21/3086 , H01L21/32139 , H01L21/76229 , H01L23/544 , H01L27/1052 , H01L27/11519 , H01L27/11526 , H01L27/11529 , H01L2924/0002 , H01L2924/14 , H01L2924/00
摘要： A method of fabricating an integrated circuit device includes forming first and second mask structures on respective first and second regions of a feature layer. Each of the first and second mask structures includes a dual mask pattern and an etch mask pattern thereon having an etch selectivity relative to the dual mask pattern. The etch mask patterns of the first and second mask structures are etched to partially remove the etch mask pattern from the second mask structure. Spacers are formed on opposing sidewalls of the first and second mask structures. The first mask structure is selectively removed from between the spacers in the first region to define a first mask pattern including the opposing sidewall spacers with a void therebetween in the first region, and a second mask pattern including the opposing sidewall spacers with the second mask structure therebetween in the second region.
摘要翻译：制造集成电路器件的方法包括在特征层的相应的第一和第二区域上形成第一和第二掩模结构。第一和第二掩模结构中的每一个包括双掩模图案和其上具有相对于双掩模图案的蚀刻选择性的蚀刻掩模图案。蚀刻第一和第二掩模结构的蚀刻掩模图案以从第二掩模结构部分去除蚀刻掩模图案。间隔件形成在第一和第二掩模结构的相对侧壁上。第一掩模结构被选择性地从第一区域中的间隔物之间移除，以限定第一掩模图案，其包括在第一区域中具有空隙的相对的侧壁间隔物，以及包括与第二掩模结构相对的侧壁间隔物的第二掩模图案在第二区域中。

4. 发明申请

US20140191405A1 METHOD OF FORMING PATTERNS FOR SEMICONDUCTOR DEVICE 有权
标题翻译：形成半导体器件的图案的方法
公开(公告)号：US20140191405A1
公开(公告)日：2014-07-10
申请号：US14208456
申请日：2014-03-13
申请人： Young-Ho Lee , Jae-Hwang Sim , Sang-Yong Park , Kyung-Lyul Moon
发明人： Young-Ho Lee , Jae-Hwang Sim , Sang-Yong Park , Kyung-Lyul Moon
IPC分类号： H01L23/528
CPC分类号： H01L23/528 , H01L21/0337 , H01L21/0338 , H01L21/3086 , H01L21/3088 , H01L21/31144 , H01L21/76229 , H01L21/76816 , H01L21/76838 , H01L27/10814 , H01L27/10855 , H01L27/11519 , H01L27/11526 , H01L2924/0002 , H01L2924/00
摘要： Provided is a method of forming patterns for a semiconductor device in which fine patterns and large-width patterns are formed simultaneously and adjacent to each other. In the method, a first layer is formed on a substrate so as to cover a first region and a second region which are included in the substrate. Both a blocking pattern covering a portion of the first layer in the first region and a low-density large-width pattern covering a portion of the first layer in the second region are simultaneously formed. A plurality of sacrificial mask patterns are formed on the first layer and the blocking pattern in the first region. A plurality of spacers covering exposed sidewalls of the plurality of sacrificial mask patterns are formed. The plurality of sacrificial mask patterns are removed. The first layer in the first and second regions are simultaneously etched by using the plurality of spacers and the blocking pattern as etch masks in the first region and using the low-density large-width pattern as an etch mask in the second region.
摘要翻译：提供一种形成半导体器件的图案的方法，其中精细图案和大幅图案同时并且彼此相邻地形成。在该方法中，在衬底上形成第一层以覆盖包括在衬底中的第一区域和第二区域。同时形成覆盖第一区域中的第一层的一部分的阻挡图案和覆盖第二区域中的第一层的一部分的低密度大图案。在第一层上形成多个牺牲掩模图案，并在第一区域中形成阻挡图案。形成覆盖多个牺牲掩模图案的暴露侧壁的多个间隔物。去除多个牺牲掩模图案。通过使用多个间隔物和阻挡图案作为第一区域中的蚀刻掩模并且在第二区域中使用低密度大宽度图案作为蚀刻掩模，同时蚀刻第一和第二区域中的第一层。

5. 发明授权

US08318603B2 Method of forming patterns for semiconductor device 有权
标题翻译：形成半导体器件图案的方法
公开(公告)号：US08318603B2
公开(公告)日：2012-11-27
申请号：US12653588
申请日：2009-12-16
申请人： Young-Ho Lee , Jae-Hwang Sim , Sang-Yong Park , Kyung-Lyul Moon
发明人： Young-Ho Lee , Jae-Hwang Sim , Sang-Yong Park , Kyung-Lyul Moon
IPC分类号： H01L21/311
CPC分类号： H01L23/528 , H01L21/0337 , H01L21/0338 , H01L21/3086 , H01L21/3088 , H01L21/31144 , H01L21/76229 , H01L21/76816 , H01L21/76838 , H01L27/10814 , H01L27/10855 , H01L27/11519 , H01L27/11526 , H01L2924/0002 , H01L2924/00
摘要： Provided is a method of forming patterns for a semiconductor device in which fine patterns and large-width patterns are formed simultaneously and adjacent to each other. In the method, a first layer is formed on a substrate so as to cover a first region and a second region which are included in the substrate. Both a blocking pattern covering a portion of the first layer in the first region and a low-density large-width pattern covering a portion of the first layer in the second region are simultaneously formed. A plurality of sacrificial mask patterns are formed on the first layer and the blocking pattern in the first region. A plurality of spacers covering exposed sidewalls of the plurality of sacrificial mask patterns are formed. The plurality of sacrificial mask patterns are removed. The first layer in the first and second regions are simultaneously etched by using the plurality of spacers and the blocking pattern as etch masks in the first region and using the low-density large-width pattern as an etch mask in the second region.
摘要翻译：提供一种形成半导体器件的图案的方法，其中精细图案和大幅图案同时并且彼此相邻地形成。在该方法中，在衬底上形成第一层以覆盖包括在衬底中的第一区域和第二区域。同时形成覆盖第一区域中的第一层的一部分的阻挡图案和覆盖第二区域中的第一层的一部分的低密度大图案。在第一层上形成多个牺牲掩模图案，并在第一区域中形成阻挡图案。形成覆盖多个牺牲掩模图案的暴露侧壁的多个间隔物。去除多个牺牲掩模图案。通过使用多个间隔物和阻挡图案作为第一区域中的蚀刻掩模并且在第二区域中使用低密度大宽度图案作为蚀刻掩模，同时蚀刻第一和第二区域中的第一层。

6. 发明授权

US08057692B2 Methods of forming fine patterns in the fabrication of semiconductor devices 有权
标题翻译：在半导体器件的制造中形成精细图案的方法
公开(公告)号：US08057692B2
公开(公告)日：2011-11-15
申请号：US12290420
申请日：2008-10-30
申请人： Sang-Yong Park , Jae-Hwang Sim , Young-Ho Lee , Kyung-Lyul Moon , Jae-Kwan Park
发明人： Sang-Yong Park , Jae-Hwang Sim , Young-Ho Lee , Kyung-Lyul Moon , Jae-Kwan Park
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： H01L23/528 , H01L21/0337 , H01L21/0338 , H01L21/32139 , H01L21/76838 , H01L21/823456 , H01L27/115 , H01L2924/0002 , H01L2924/00
摘要： In a method of forming a semiconductor device, a feature layer is provided on a substrate and a mask layer is provided on the feature layer. A portion of the mask layer is removed in a first region of the semiconductor device where fine features of the feature layer are to be located, the mask layer remaining in a second region of the semiconductor device where broad features of the feature layer are to be located. A mold mask pattern is provided on the feature layer in the first region and on the mask layer in the second region. A spacer layer is provided on the mold mask pattern in the first region and in the second region. An etching process is performed to etch the spacer layer so that spacers remain at sidewalls of pattern features of the mold mask pattern, and to etch the mask layer in the second region to provide mask layer patterns in the second region. The feature layer is etched using the mask layer patterns as an etch mask in the second region and using the spacers as an etch mask in the first region to provide a feature layer pattern having fine features in the first region and broad features in the second region.
摘要翻译：在形成半导体器件的方法中，在衬底上提供特征层，并且在特征层上设置掩模层。掩模层的一部分在半导体器件的第一区域被去除，其中特征层的精细特征将被定位，掩模层保留在半导体器件的第二区域中，其中特征层的广泛特征将是位于。模具掩模图案设置在第一区域中的特征层和第二区域中的掩模层上。间隔层设置在第一区域和第二区域中的模具掩模图案上。执行蚀刻工艺以蚀刻间隔层，使得间隔物保留在模具掩模图案的图案特征的侧壁处，并且蚀刻第二区域中的掩模层以在第二区域中提供掩模层图案。使用掩模层图案作为第二区域中的蚀刻掩模蚀刻特征层，并且在第一区域中使用间隔物作为蚀刻掩模来提供在第一区域中具有精细特征的特征层图案，并且在第二区域中具有广泛特征。

7. 发明申请

US20100266094A1 DUAL-COOLED NUCLEAR FUEL ROD HAVING ANNULAR PLUGS AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：具有环形管的双冷却核燃料棒及其制造方法
公开(公告)号：US20100266094A1
公开(公告)日：2010-10-21
申请号：US12559059
申请日：2009-09-14
申请人： Hyung-Kyu Kim , Jong-Hun Kim , Dae-Ho Kim , Kun-Woo Song , Kyung-Ho Yoon , Young-Ho Lee , Jae-Yong Kim , Kang-Hee Lee
发明人： Hyung-Kyu Kim , Jong-Hun Kim , Dae-Ho Kim , Kun-Woo Song , Kyung-Ho Yoon , Young-Ho Lee , Jae-Yong Kim , Kang-Hee Lee
IPC分类号： G21C3/16 , C21D1/40
CPC分类号： G21C3/02 , G21C3/10 , G21C21/02 , Y02E30/40
摘要： A dual-cooled nuclear fuel rod and a method of manufacturing the same are provided. The nuclear fuel rod includes an outer cladding tube having a circular cross section, an inner cladding tube having an outer diameter smaller than an inner diameter of the outer cladding tube, and a length longer than the outer cladding tube, and located in parallel in the outer cladding tube, a pellet charged in a space between the outer and inner cladding tubes and generating energy by nuclear fission, and first and second end plugs coupling opposite ends of the outer cladding tube to stepped outer joints formed on outer circumferences of first ends thereof and coupling opposite ends of the inner cladding tube to stepped inner joints formed on inner circumferences of the first ends thereof.
摘要翻译：提供了双冷核燃料棒及其制造方法。核燃料棒包括具有圆形横截面的外包层管，外包层的外径小于外包层管的内径，长度比外包层管长，并且平行于外包层管，填充在外包层管和内包壳管之间的空间中并通过核裂变产生能量的颗粒，以及将外包层管的相对端连接到形成在其第一端的外周上的阶梯式外接头的第一和第二端塞并且将内包层管的相对端连接到形成在其第一端的内周上的阶梯式内接头。

8. 发明申请

US20100221919A1 Method of forming patterns for semiconductor device 有权
标题翻译：形成半导体器件图案的方法
公开(公告)号：US20100221919A1
公开(公告)日：2010-09-02
申请号：US12653588
申请日：2009-12-16
申请人： Young-Ho Lee , Jae-Hwang Sim , Sang-Yong Park , Kyung-Lyul Moon
发明人： Young-Ho Lee , Jae-Hwang Sim , Sang-Yong Park , Kyung-Lyul Moon
IPC分类号： H01L21/302
CPC分类号： H01L23/528 , H01L21/0337 , H01L21/0338 , H01L21/3086 , H01L21/3088 , H01L21/31144 , H01L21/76229 , H01L21/76816 , H01L21/76838 , H01L27/10814 , H01L27/10855 , H01L27/11519 , H01L27/11526 , H01L2924/0002 , H01L2924/00
摘要： Provided is a method of forming patterns for a semiconductor device in which fine patterns and large-width patterns are formed simultaneously and adjacent to each other. In the method, a first layer is formed on a substrate so as to cover a first region and a second region which are included in the substrate. Both a blocking pattern covering a portion of the first layer in the first region and a low-density large-width pattern covering a portion of the first layer in the second region are simultaneously formed. A plurality of sacrificial mask patterns are formed on the first layer and the blocking pattern in the first region. A plurality of spacers covering exposed sidewalls of the plurality of sacrificial mask patterns are formed. The plurality of sacrificial mask patterns are removed. The first layer in the first and second regions are simultaneously etched by using the plurality of spacers and the blocking pattern as etch masks in the first region and using the low-density large-width pattern as an etch mask in the second region.
摘要翻译：提供一种形成半导体器件的图案的方法，其中精细图案和大幅图案同时并且彼此相邻地形成。在该方法中，在衬底上形成第一层以覆盖包括在衬底中的第一区域和第二区域。同时形成覆盖第一区域中的第一层的一部分的阻挡图案和覆盖第二区域中的第一层的一部分的低密度大图案。在第一层上形成多个牺牲掩模图案，并在第一区域中形成阻挡图案。形成覆盖多个牺牲掩模图案的暴露侧壁的多个间隔物。去除多个牺牲掩模图案。通过使用多个间隔物和阻挡图案作为第一区域中的蚀刻掩模并且在第二区域中使用低密度大宽度图案作为蚀刻掩模，同时蚀刻第一和第二区域中的第一层。

9. 发明申请

US20100172460A1 PERFORATED PLATE SUPPORT FOR DUAL-COOLED SEGMENTED FUEL ROD 有权
标题翻译：双冷却分段燃油柱的执行板支撑
公开(公告)号：US20100172460A1
公开(公告)日：2010-07-08
申请号：US12421829
申请日：2009-04-10
申请人： Kyung-Ho Yoon , Hyung-Kyu Kim , Jae-Yong Kim , Young-Ho Lee , Kang-Hee Lee , Tae-Hyun Chun , Wang-Kee In , Dong-Seok Oh , Chang Hwan Shin , Kun-Woo Song
发明人： Kyung-Ho Yoon , Hyung-Kyu Kim , Jae-Yong Kim , Young-Ho Lee , Kang-Hee Lee , Tae-Hyun Chun , Wang-Kee In , Dong-Seok Oh , Chang Hwan Shin , Kun-Woo Song
IPC分类号： G21C3/34
CPC分类号： G21C3/322 , G21C3/3305 , G21C3/3315 , Y02E30/38
摘要： A perforated plate support supports dual-cooled fuel rods, each of which has concentric outer and inner tubes and is coupled with upper and lower end plugs at upper and lower ends thereof, and guide thimbles, each of which is used as a passage for a control rod. The perforated plate support is formed as a support plate having the shape of a flat plate, which includes internal channel holes, each of which has a diameter corresponding to an outer diameter of the inner tube, guide thimble holes, each of which has a diameter corresponding to an outer diameter of the guide thimble, and sub-channel holes around each internal channel hole. The upper or lower end of the dual-cooled fuel rod is coupled to the support plate such that the outer diameter of the inner tube is matched with the diameter of the internal channel hole.
摘要翻译：多孔板支撑件支撑双重冷却的燃料棒，每个燃料棒具有同心的外管和内管，并且在其上端和下端与上端和下端塞连接，导向套管每一个用作通道控制棒。多孔板支撑件形成为具有平板形状的支撑板，该支撑板包括内部通道孔，每个内部通道孔的直径对应于内部管的外径，导向套管孔各自具有直径对应于导向套管的外径，以及在每个内部通道孔周围的子通道孔。双冷却燃料棒的上端或下端与支撑板相连，使得内管的外径与内通道孔的直径相匹配。

10. 发明申请

US20100062107A1 GLYCERIDE OIL COMPOSITION FROM FISH OIL AND PREPARATION METHOD THEREOF 有权
标题翻译：来自鱼油的甘油油组合物及其制备方法
公开(公告)号：US20100062107A1
公开(公告)日：2010-03-11
申请号：US12440584
申请日：2007-09-05
申请人： Dong-Hun Yoon , Kwang-Hoon Yoon , Gi-Wang Han , Moon-Won Lee , Young-Ho Lee , Sang-Hyuk Park
发明人： Dong-Hun Yoon , Kwang-Hoon Yoon , Gi-Wang Han , Moon-Won Lee , Young-Ho Lee , Sang-Hyuk Park
IPC分类号： A23D9/02 , A23D9/00
CPC分类号： C11C3/08 , A23D9/007
摘要： Provided are a glyceride oil composition derived from a fish oil and a preparation method thereof. The composition includes docosahexaenoic acid (DHA) and docosapentaenoic acid (DPA) with a content of 45 to 95% by weight and eicosapentaenoic acid (EPA) with a content of 0.001 to 13% by weight among constituent fatty acids, and a saturated fatty acid having 16 to 18 carbon atoms, which is bonded at 1- and 3-positions, with a content of 0.001 to 5% by weight among constituent fatty acids, in which a weight ratio of docosahexaenoic acid (DHA)/docosapentaenoic acid (DPA) is 0.5 to 8 and a weight ratio of docosahexaenoic acid (DHA)/eicosapentaenoic acid (EPA) is 3.5 to 15. The glyceride oil composition derived from fish oil has nutritional and physiological superiority due to containing a great amount of polyunsaturated fatty acids such as DHA and DPA in a form of glyceride, and can minimize disadvantages of EPA such as inhibition of ω-6 fatty acid metabolism by containing a low amount of EPA. The glyceride oil composition is excellent in digestion and absorption of polyunsaturated fatty acids into a human body by containing a low amount of saturated fatty acids at 1- and 3-positions and process characteristics such as an oxidation stability and water-dispersibility.
摘要翻译：提供衍生自鱼油的甘油酯油组合物及其制备方法。组合物包含含量为45〜95重量％的二十二碳六烯酸（DHA）和二十二碳五烯酸（DPA），二十碳五烯酸（EPA）的组成脂肪酸含量为0.001〜13重量％，饱和脂肪酸具有16至18个碳原子，其在1-和3-位上键合，其中组分脂肪酸的含量为0.001至5重量％，其中二十二碳六烯酸（DHA）/二十二碳五烯酸（DPA）为0.5〜8，二十二碳六烯酸（DHA）/二十碳五烯酸（EPA）的重量比为3.5〜15。来自鱼油的甘油酯油组合物由于含有大量的多不饱和脂肪酸，例如 DHA和DPA以甘油酯的形式，并且可以最小化EPA的缺点，例如通过含有少量的EPA来抑制ω-6脂肪酸代谢。甘油酯油组合物通过在1-和3-位含有少量的饱和脂肪酸以及诸如氧化稳定性和水分散性的工艺特性，将多不饱和脂肪酸消化吸收到人体中是优异的。

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