专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US4377671A Process for producing olefinic copolymer rubbers 失效
标题翻译：制备烯烃共聚物橡胶的方法
公开(公告)号：US4377671A
公开(公告)日：1983-03-22
申请号：US281048
申请日：1981-07-07
申请人： Kenya Makino , Hideo Sakurai , Masaru Watanabe , Toshiyuki Nishimura
发明人： Kenya Makino , Hideo Sakurai , Masaru Watanabe , Toshiyuki Nishimura
IPC分类号： C08F4/44 , C08F4/64 , C08F4/642 , C08F210/16 , C08F210/18 , C08F4/66 , C08F4/68
CPC分类号： C08F210/16 , C08F210/18
摘要： In a process for producing a rubbery olefinic copolymer which comprises random-copolymerizing at least two olefins in the presence of a catalyst composed of (A) a titanium compound and (B) an organometallic compound of a metal of Groups I to III of the periodic table, the improvement wherein the titanium compound (A) of the catalyst is a solution of a solid titanium halide in a hydrocarbon solvent, a halogenated hydrocarbon solvent or a mixture of both, said solid titanium halide being rendered soluble in said solvent.
摘要翻译：在制备橡胶状烯烃共聚物的方法中，该方法包括在由（A）钛化合物和（B）有机金属化合物存在下，使至少两种烯烃共聚，所述催化剂由（A）钛化合物和表中，其中催化剂的钛化合物（A）是固体卤化钛在烃溶剂，卤代烃溶剂或二者的混合物中的溶液的改进，所述固体卤化钛可溶于所述溶剂。

2. 发明授权

US4366297A Process for producing olefinic copolymer rubber with improved titanium compound containing catalyst system 失效
标题翻译：制备含改性钛化合物催化剂体系的烯烃共聚物橡胶的方法
公开(公告)号：US4366297A
公开(公告)日：1982-12-28
申请号：US200066
申请日：1980-10-23
申请人： Kenya Makino , Hideo Sakurai , Masaru Watanabe , Toshiyuki Nishimura
发明人： Kenya Makino , Hideo Sakurai , Masaru Watanabe , Toshiyuki Nishimura
IPC分类号： C08F4/64 , C08F210/00 , C08F210/16 , C08F210/18
CPC分类号： C08F210/16 , C08F10/00 , C08F210/00 , C08F210/18 , C08F2410/04
摘要： In a process for producing a rubber olefin copolymer which comprises random copolymerization of at least two olefins in the presence of a catalyst composed of (A) a titanium compound and (B) an organometallic compound of a metal of Groups I to III of the periodic table, the improvement wherein the titanium compound (A) is a liquid product obtained by treating a titanium tetrahalide of the general formula TiX.sub.4 in which X represents Cl, Br or I in a hydrocarbon, a halogenated hydrocarbon or a mixture of both in the presence of an ether with at least one member selected from the group consisting of (1) an organoaluminum compound, (2) an organomagnesium compound and (3) a combination of hydrogen and at least one metal or metal compound selected from the group consisting of metals of Group IB, IIB, IVB and VIII of the periodic table, compounds of metals of Group VIII of the periodic table, cuprous chloride, titanium hydride and zirconium hydride.
摘要翻译：在一种橡胶烯烃共聚物的制备方法中，该方法包括在（A）钛化合物和（B）有机金属化合物存在下，由至少两种烯烃的无规共聚反应，表中，其中钛化合物（A）是通过在存在下在烃，卤代烃或二者的混合物中处理其中X表示Cl，Br或I的通式TiX 4的四卤化物得到的液体产物的醚与至少一种选自（1）有机铝化合物，（2）有机镁化合物和（3）氢和至少一种选自金属的金属或金属化合物的组合的成员元素周期表第IB族，第IIB族，第IVB族和第VIII族，周期表第Ⅷ族金属化合物，氯化亚铜，氢化钛和氢化锆。

3. 发明授权

US4356160A Process for producing titanium trihalides by reducing titanium tetrahalides 失效
标题翻译：通过还原四卤化钛生产三卤化钛的方法
公开(公告)号：US4356160A
公开(公告)日：1982-10-26
申请号：US254667
申请日：1981-04-16
申请人： Kenya Makino , Hieo Sakurai , Masaru Watanabe , Toshiyuki Nishimura
发明人： Kenya Makino , Hieo Sakurai , Masaru Watanabe , Toshiyuki Nishimura
IPC分类号： C08F4/00 , C01G23/02 , C08F4/60 , C08F4/642 , C08F10/00
CPC分类号： C08F10/00 , C01G23/026 , C08F2410/04
摘要： In a process for producing a titanium trihalide by reducing a titanium tetrahalide with hydrogen, the improvement wherein the reduction is carried out in an organic solvent in the presence of an ether and at least one member of the group consisting of metals of Groups IB, IIB, IVB and VIII of the periodic table and compounds of these materials.
摘要翻译：在通过用氢还原四卤化钛制备三卤化钛的方法中，其改进在于在有机溶剂中，在醚存在下和至少一种由IB，IIB族金属组成的组中进行还原，IVB和VIII以及这些材料的化合物。

4. 发明申请

US20060201161A1 Cooling device for electronic component using thermo-electric conversion material 审中-公开
标题翻译：使用热电转换材料的电子部件冷却装置
公开(公告)号：US20060201161A1
公开(公告)日：2006-09-14
申请号：US10540523
申请日：2003-12-26
申请人： Shinji Hirai , Toshiyuki Nishimura , Yoichiro Uemura , Shigenori Morita , Kazumasa Igarashi
发明人： Shinji Hirai , Toshiyuki Nishimura , Yoichiro Uemura , Shigenori Morita , Kazumasa Igarashi
IPC分类号： F25B21/02 , H01L35/28 , F25D23/12
CPC分类号： H01L23/38 , H01L35/32 , H01L2924/0002 , H01L2924/00
摘要： A cooling device for a heat-generating electronic component such as a semiconductor integrated circuit element is provided. In particular, a cooling device using a thermoelectric conversion material is provided. A cooling device for an electronic component includes a thermoelectric conversion material disposed between two electrodes that function as a cathode and an anode and are electrically short-circuited. The thermoelectric conversion material is either a p-type material or an n-type material or a combination of p-type and n-type materials arranged alternately in series. This cooling device is brought into contact with an electronic component requiring cooling so that one electrode side in contact with the thermoelectric conversion material becomes a low-temperature side and the other electrode side becomes a high-temperature side. A temperature difference between the two electrodes causes the thermoelectric conversion material to produce a thermoelectromotive force which generates current to cool the high-temperature side.
摘要翻译：提供了一种用于诸如半导体集成电路元件的发热电子部件的冷却装置。特别地，提供了使用热电转换材料的冷却装置。电子部件的冷却装置包括设置在两个电极之间的热电转换材料，该电极用作阴极和阳极并且电短路。热电转换材料是p型材料或n型材料，或者是串联交替布置的p型和n型材料的组合。该冷却装置与需要冷却的电子部件接触，使得与热电转换材料接触的一个电极侧成为低温侧，另一个电极侧成为高温侧。两个电极之间的温差导致热电转换材料产生产生电流以冷却高温侧的热电动势。

5. 发明授权

US06737378B2 Silicon nitride sintered products and processes for their production 失效
标题翻译：氮化硅烧结产品及其生产工艺
公开(公告)号：US06737378B2
公开(公告)日：2004-05-18
申请号：US10260396
申请日：2002-10-01
申请人： Naoto Hirosaki , Toshiyuki Nishimura , Yoshinobu Yamamoto , Mamoru Mitomo
发明人： Naoto Hirosaki , Toshiyuki Nishimura , Yoshinobu Yamamoto , Mamoru Mitomo
IPC分类号： C04B35587
CPC分类号： C04B35/584 , C04B35/5935
摘要： A silicon nitride sintered product comprising silicon nitride grains and a grain boundary phase, wherein the grain boundary phase consists essentially of a single phase of a Lu4Si2O7N2 crystal phase, and the composition of the silicon nitride sintered product is a composition in or around a triangle ABC having point A: Si3N4, point B: 28 mol % SiO2-72 mol % Lu2O3 and point C: 16 mol % SiO2-84 mol % Lu2O3, as three apexes, in a ternary system phase diagram of a Si3N4—SiO2—Lu2O3 system. Also disclosed is a silicon nitride sintered product comprising silicon nitride grains and a grain boundary phase of an oxynitride, wherein the composition of the sintered product is a composition in a triangle having point A: Si3N4, point B: 40 mol % SiO2-60 mol % Lu2O3 and point C: 60 mol % SiO2-40 mol % Lu2O3, as three apexes, in a ternary system phase diagram of a Si3N4—SiO2—Lu2O3 system.
摘要翻译：一种包含氮化硅晶粒和晶界相的氮化硅烧结体，其中晶界相主要由Lu4Si2O7N2晶相的单相组成，氮化硅烧结体的组成是三角形ABC内或周围的组成在Si3N4-SiO2-Lu2O3体系的三元体系相图中，点A：Si 3 N 4，B点：28摩尔％SiO 2 -S72摩尔％Lu 2 O 3，点C：16摩尔％SiO 2 -S84摩尔％Lu 2 O 3作为三个顶点。还公开了包含氮化硅晶粒和氮氧化物的晶界相的氮化硅烧结体，其中烧结体的组成是具有点A：Si 3 N 4，点B：40摩尔％SiO 2〜60摩尔的三角形组成％Lu2O3和点C：60mol％SiO2-40mol％Lu2O3，作为三个顶点，在Si3N4-SiO2-Lu2O3体系的三元体系相图中。

6. 发明申请

US20120070247A1 Method for manufacturing fastening screw and fastening screw 审中-公开
标题翻译：紧固螺丝和紧固螺丝的制造方法
公开(公告)号：US20120070247A1
公开(公告)日：2012-03-22
申请号：US13137803
申请日：2011-09-14
申请人： Tadashi Tashima , Toshiyuki Nishimura
发明人： Tadashi Tashima , Toshiyuki Nishimura
IPC分类号： F16B35/00 , B23G9/00
CPC分类号： B21K1/463 , B21K1/56 , F16B35/06 , F16B39/282
摘要： An object of the present invention is to reduce the fastening time and to obtain a predetermined fastening force and to suppress the loosening of a screw. The solution of the present invention is to provide a method for manufacturing a fastening screw, which comprises: a preliminary upsetting step B for forging a front end of a blank wire 1 and forming a head 1a having a depression 1d in a condition, where a curve portion 1b remains in an outer periphery to be formed into a bearing surface of the fastening screw, by means of a die 21 having a protrusion 21b protruding from a flat end face 21a and a first punch 20 having a cup-shaped cavity 20a, the front end protruding from the protrusion 21b of the die 21; a finish upsetting step C for forging the head 1a and forming a recess 1c so that the depression 1d of the head 1a is not interfered with the recess 1c by the die 21 and a second punch 30 having a protrusion 30b for forming the recess 1c on the head 1a; and a thread forming step D for processing a shank 1e extending from the head 1 and forming threads on the shank 1e.
摘要翻译：本发明的目的是减少紧固时间并获得预定的紧固力并抑制螺丝的松动。本发明的解决方案是提供一种用于制造紧固螺钉的方法，其包括：用于锻造坯料丝1的前端并形成具有凹陷1d的头部1a的初步镦锻步骤B，其中，弯曲部分1b通过具有从平坦端面21a突出的突起21b的模具21和具有杯形腔20a的第一冲头20保持在外周中以形成紧固螺钉的支承表面，前端从模具21的突起21b突出; 用于锻造头部1a并形成凹部1c的完成镦锻步骤C，使得头部1a的凹部1d不被模具21干涉凹部1c，以及具有用于形成凹部1c的突起30b的第二冲头30 头1a; 以及螺纹形成步骤D，用于处理从头部1延伸的柄1e并在柄部1e上形成螺纹。

7. 发明申请

US20070040206A1 High dielectric material composed of sintered body of rare earth sulfide 审中-公开
标题翻译：高介电材料由稀土硫化物烧结体组成
公开(公告)号：US20070040206A1
公开(公告)日：2007-02-22
申请号：US10550625
申请日：2004-03-22
申请人： Shinji Hirai , Toshiyuki Nishimura , Yoichiro Uemura , Shigenori Morita , Michihiro Ohta , Kazumasa Igarashi
发明人： Shinji Hirai , Toshiyuki Nishimura , Yoichiro Uemura , Shigenori Morita , Michihiro Ohta , Kazumasa Igarashi
IPC分类号： H01L29/94
CPC分类号： C04B35/547 , C04B35/64 , C04B35/645 , C04B2235/3224 , C04B2235/3227 , C04B2235/3229 , C04B2235/408 , C04B2235/446 , C04B2235/5436 , C04B2235/666 , C04B2235/762 , C04B2235/765 , H01G4/1209
摘要： A high-dielectric material which is especially useful as a material for a high-capacitance capacitor and which has a high dielectric constant is provided. The high-dielectric material is composed of a sintered body of a rare-earth sulfide, the high-dielectric material having a crystal structure of tetragonal β type, a chemical composition represented by Ln2S3 (where Ln represents a rare-earth metal), a frequency domain within the range of 0.5 kHz to 1,000 kHz, and a value of relative dielectric constant of more than 1,000 at room temperature.
摘要翻译：提供了特别可用作高容量电容器材料并具有高介电常数的高介电材料。高电介质材料由稀土类硫化物的烧结体构成，具有四方β型晶体结构的高电介质材料，Ln 2 S 2表示的化学成分， 3（其中Ln表示稀土金属），频域在0.5kHz至1,000kHz范围内，相对介电常数在室温下大于1000。

8. 发明授权

US5672553A Superplastic silicon nitride sintered body 失效
标题翻译：超塑性氮化硅烧结体
公开(公告)号：US5672553A
公开(公告)日：1997-09-30
申请号：US699690
申请日：1996-08-15
申请人： Mamoru Mitomo , Hideki Hirotsuru , Hisayuki Suematsu , Toshiyuki Nishimura
发明人： Mamoru Mitomo , Hideki Hirotsuru , Hisayuki Suematsu , Toshiyuki Nishimura
IPC分类号： C04B35/584 , C01B21/068 , C04B35/593 , C04B35/626 , C04B35/587
CPC分类号： C04B35/593
摘要： A superplastic silicon nitride sintered body which is a sintered body of silicon nitride and which has superplasticity such that when a compression or tensile stress of from 30 to 2000 kg/cm.sup.2 is applied thereto at a temperature within a range of from 1350.degree. to 1650.degree. C., it deforms at a deformation rate of from 10.sup.-4 /sec to 10.sup.-1 /sec.
摘要翻译：作为氮化硅烧结体的超塑性氮化硅烧结体，其超塑性使得当在1350〜1650℃的温度范围内施加30〜2000kg / cm 2的压缩拉伸应力时，它以10-4 /秒的变形率变形到10-1 /秒。

9. 发明授权

US07283405B2 Semiconductor memory device and signal processing system 失效
标题翻译：半导体存储器件和信号处理系统
公开(公告)号：US07283405B2
公开(公告)日：2007-10-16
申请号：US11126302
申请日：2005-05-11
申请人： Hidetoshi Yamanaka , Toshiyuki Nishimura , Shigeru Atsumi , Daisuke Yoshioka
发明人： Hidetoshi Yamanaka , Toshiyuki Nishimura , Shigeru Atsumi , Daisuke Yoshioka
IPC分类号： G11C7/10 , G11C8/06 , G11C11/4093
CPC分类号： G11C7/1039 , G11C7/1012 , G11C7/1051 , G11C7/106 , G11C7/1063 , G11C8/06 , G11C16/0483 , G11C16/26 , G11C2207/107
摘要： A semiconductor memory device able to read out data at a high speed continuously, provided with, corresponding to a plurality of banks, current address registers for holding addresses for reading data of cell arrays, reserved address registers able to receive in advance and hold reserved addresses for next read operations from the outside, and bank control circuits for making the current address registers hold reserved addresses held in the reserved address registers, making the data be read out, and making the data latch circuits hold the data when the data read out from the cell arrays of the banks by addresses held in the current address registers and held in the data latch circuits become able to be transferred to the outside, and a signal processing system relating to the same.
摘要翻译：一种半导体存储装置，其能够连续地高速读出数据，与多个存储体相对应地设置有用于保存用于读取单元阵列的数据的地址的当前地址寄存器，能够提前接收并保持预留地址的预留地址寄存器以及用于使当前地址寄存器保持在保留地址寄存器中的保留地址的存储体控制电路，使数据被读出，使数据锁存电路在数据从通过保存在当前地址中并保存在数据锁存电路中的存储在存储器中的存储体的单元阵列变得能够被传送到外部，以及与其相关的信号处理系统。

10. 发明授权

US07186391B1 Sintered compact of lanthanum sulfide or cerium sulfide and method for preparing the same 失效
标题翻译：硫化镧或硫化铈的烧结体及其制备方法
公开(公告)号：US07186391B1
公开(公告)日：2007-03-06
申请号：US10275963
申请日：2000-11-17
申请人： Yoichiro Uemura , Mamoru Mitomo , Toshiyuki Nishimura , Shinji Hirai , Kazuyoshi Shimakage
发明人： Yoichiro Uemura , Mamoru Mitomo , Toshiyuki Nishimura , Shinji Hirai , Kazuyoshi Shimakage
IPC分类号： C01B17/00 , C01F1/00 , C01F17/00 , H01L35/00
CPC分类号： C04B35/547
摘要： The present invention provides a lanthanum sulfide or cerium sulfide sintered compact usable as a thermoelectric conversion material having a high Seebeck coefficient. The sintered compact has a chemical composition of La2S3 or Ce2S3, and a crystal structure consisting of a mixture of beta and gamma phases having a Seebeck coefficient higher than that of the crystal structure otherwise being in gamma single-phase. The sintered compact is produced by preparing a beta-phase La2S3 or alpha-phase Ce2S3 powder of raw material having a high purity with a suppressed carbon impurity concentration and a given range of oxygen concentration, charging the raw material into a carbon die having an inner surface covered with an h-BN applied thereon, and hot-pressing the charged material under vacuum to form a mixture of beta and gamma phases having a high Seebeck coefficient.
摘要翻译：本发明提供可用作具有高塞贝克系数的热电转换材料的硫化镧或硫化铈烧结体。该烧结体具有La 2 S 3 3或Ce 2 S 3 3的化学组成，以及晶体结构由具有高于晶体结构的塞贝克系数的β和γ相的混合物组成，否则为γ单相。烧结体通过制备β相La 2 S 3或α相Ce 2 S 3 N / 具有高纯度的原料粉末，其具有抑制的碳杂质浓度和给定的氧浓度范围，将原料装入具有覆盖有h-BN的内表面的碳模头中，并将带电在真空下形成具有高塞贝克系数的β相和γ相的混合物。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式