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1. 发明授权

US07504847B2 Mechanism for detection and compensation of NBTI induced threshold degradation 失效
标题翻译： NBTI诱发阈值降解的检测和补偿机制
公开(公告)号：US07504847B2
公开(公告)日：2009-03-17
申请号：US11550814
申请日：2006-10-19
申请人： Kenneth J. Goodnow , Douglas W. Kemerer , Stephen G. Shuma , Oscar C. Strohacker , Mark S. Styduhar , Peter A. Twembly , Paul S. Zuchewski
发明人： Kenneth J. Goodnow , Douglas W. Kemerer , Stephen G. Shuma , Oscar C. Strohacker , Mark S. Styduhar , Peter A. Twembly , Paul S. Zuchewski
IPC分类号： G01R31/26
CPC分类号： G01R31/2856 , G01R31/2868
摘要： The embodiments of the invention provide an apparatus and method for detection and compensation of negative bias temperature instability (NBTI) induced threshold degradation. A semiconductor device is provided comprising at least one stress device having a voltage applied to its gate node and at least one reference device having a zero gate-to-source voltage. A controller is also provided to configure node voltages of the device and/or the reference device to reflect different regions of device operations found in digital and analog circuit applications. Moreover, the controller measures a difference in current between the stress device and the reference device to determine whether NBTI induced threshold degradation has occurred in the stress device. The controller also adjusts an output power supply voltage of the stress device until a performance of the stress device matches a performance of the reference device to account for the NBTI induced threshold degradation.
摘要翻译：本发明的实施例提供了用于检测和补偿负偏压温度不稳定性（NBTI）诱导的阈值劣化的装置和方法。提供一种半导体器件，其包括至少一个应力器件，其具有施加到其栅极节点的电压和至少一个具有零栅极至源极电压的参考器件。还提供控制器来配置设备和/或参考设备的节点电压以反映在数字和模拟电路应用中发现的设备操作的不同区域。此外，控制器测量应力装置和参考装置之间的电流差，以确定在应力装置中是否发生了NBTI诱导的阈值劣化。控制器还调整应力装置的输出电源电压，直到应力装置的性能与参考装置的性能匹配以解决NBTI诱发的阈值劣化。

2. 发明申请

US20080094092A1 Mechanism For Detection And Compensation Of NBTI Induced Threshold Degradation 失效
标题翻译： NBTI诱导阈值降解的检测和补偿机制
公开(公告)号：US20080094092A1
公开(公告)日：2008-04-24
申请号：US11550814
申请日：2006-10-19
申请人： Kenneth J Goodnow , Douglas W. Kemerer , Stephen G. Shuma , Oscar C. Strohacker , Mark S. Styduhar , Peter A. Twembly , Paul S. Zuchewski
发明人： Kenneth J Goodnow , Douglas W. Kemerer , Stephen G. Shuma , Oscar C. Strohacker , Mark S. Styduhar , Peter A. Twembly , Paul S. Zuchewski
IPC分类号： G01R31/26
CPC分类号： G01R31/2856 , G01R31/2868
摘要： The embodiments of the invention provide an apparatus and method for detection and compensation of negative bias temperature instability (NBTI) induced threshold degradation. A semiconductor device is provided comprising at least one stress device having a voltage applied to its gate node and at least one reference device having a zero gate-to-source voltage. A controller is also provided to configure node voltages of the device and/or the reference device to reflect different regions of device operations found in digital and analog circuit applications. Moreover, the controller measures a difference in current between the stress device and the reference device to determine whether NBTI induced threshold degradation has occurred in the stress device. The controller also adjusts an output power supply voltage of the stress device until a performance of the stress device matches a performance of the reference device to account for the NBTI induced threshold degradation.
摘要翻译：本发明的实施例提供了用于检测和补偿负偏压温度不稳定性（NBTI）诱导的阈值劣化的装置和方法。提供一种半导体器件，其包括至少一个应力器件，其具有施加到其栅极节点的电压和至少一个具有零栅极至源极电压的参考器件。还提供控制器来配置设备和/或参考设备的节点电压以反映在数字和模拟电路应用中发现的设备操作的不同区域。此外，控制器测量应力装置和参考装置之间的电流差，以确定在应力装置中是否发生了NBTI诱导的阈值劣化。控制器还调整应力装置的输出电源电压，直到应力装置的性能与参考装置的性能匹配以解决NBTI诱发的阈值劣化。

3. 发明授权

US07849426B2 Mechanism for detection and compensation of NBTI induced threshold degradation 有权
标题翻译： NBTI诱发阈值降解的检测和补偿机制
公开(公告)号：US07849426B2
公开(公告)日：2010-12-07
申请号：US11931144
申请日：2007-10-31
申请人： Kenneth J. Goodnow , Douglas W. Kemerer , Stephen G. Shuma , Oscar C. Strohacker , Mark S. Styduhar , Peter A. Twombly , Paul S. Zuchowski
发明人： Kenneth J. Goodnow , Douglas W. Kemerer , Stephen G. Shuma , Oscar C. Strohacker , Mark S. Styduhar , Peter A. Twombly , Paul S. Zuchowski
IPC分类号： G06F17/50 , G01R31/26
CPC分类号： G06F17/5063
摘要： The embodiments of the invention provide a design structure for detection and compensation of negative bias temperature instability (NBTI) induced threshold degradation. A semiconductor device is provided comprising at least one stress device having a voltage applied to its gate node and at least one reference device having a zero gate-to-source voltage. A controller is also provided to configure node voltages of the device and/or the reference device to reflect different regions of device operations found in digital and analog circuit applications. Moreover, the controller measures a difference in current between the stress device and the reference device to determine whether NBTI induced threshold degradation has occurred in the stress device. The controller also adjusts an output power supply voltage of the stress device until a performance of the stress device matches a performance of the reference device to account for the NBTI induced threshold degradation.
摘要翻译：本发明的实施例提供了用于检测和补偿负偏压温度不稳定性（NBTI）诱导的阈值劣化的设计结构。提供一种半导体器件，其包括至少一个应力器件，其具有施加到其栅极节点的电压和至少一个具有零栅极至源极电压的参考器件。还提供控制器来配置设备和/或参考设备的节点电压以反映在数字和模拟电路应用中发现的设备操作的不同区域。此外，控制器测量应力装置和参考装置之间的电流差，以确定在应力装置中是否发生了NBTI诱导的阈值劣化。控制器还调整应力装置的输出电源电压，直到应力装置的性能与参考装置的性能匹配以解决NBTI诱发的阈值劣化。

4. 发明申请

US20090113358A1 MECHANISM FOR DETECTION AND COMPENSATION OF NBTI INDUCED THRESHOLD DEGRADATION 有权
标题翻译：用于检测和补偿NBTI诱发阈值降解的机制
公开(公告)号：US20090113358A1
公开(公告)日：2009-04-30
申请号：US11931144
申请日：2007-10-31
申请人： Kenneth J. Goodnow , Douglas W. Kemerer , Stephen G. Shuma , Oscar C. Strohacker , Mark S. Styduhar , Peter A. Twombly , Paul S. Zuchowski
发明人： Kenneth J. Goodnow , Douglas W. Kemerer , Stephen G. Shuma , Oscar C. Strohacker , Mark S. Styduhar , Peter A. Twombly , Paul S. Zuchowski
IPC分类号： G06F17/50
CPC分类号： G06F17/5063
摘要： The embodiments of the invention provide a design structure for detection and compensation of negative bias temperature instability (NBTI) induced threshold degradation. A semiconductor device is provided comprising at least one stress device having a voltage applied to its gate node and at least one reference device having a zero gate-to-source voltage. A controller is also provided to configure node voltages of the device and/or the reference device to reflect different regions of device operations found in digital and analog circuit applications. Moreover, the controller measures a difference in current between the stress device and the reference device to determine whether NBTI induced threshold degradation has occurred in the stress device. The controller also adjusts an output power supply voltage of the stress device until a performance of the stress device matches a performance of the reference device to account for the NBTI induced threshold degradation.
摘要翻译：本发明的实施例提供了用于检测和补偿负偏压温度不稳定性（NBTI）诱导的阈值劣化的设计结构。提供一种半导体器件，其包括至少一个应力器件，其具有施加到其栅极节点的电压和至少一个具有零栅极至源极电压的参考器件。还提供控制器来配置设备和/或参考设备的节点电压以反映在数字和模拟电路应用中发现的设备操作的不同区域。此外，控制器测量应力装置和参考装置之间的电流差，以确定在应力装置中是否发生了NBTI诱导的阈值劣化。控制器还调整应力装置的输出电源电压，直到应力装置的性能与参考装置的性能匹配以解决NBTI诱发的阈值劣化。

5. 发明授权

US08010813B2 Structure for system for extending the useful life of another system 失效
标题翻译：用于延长系统使用寿命的系统结构
公开(公告)号：US08010813B2
公开(公告)日：2011-08-30
申请号：US12051001
申请日：2008-03-19
申请人： Kenneth J. Goodnow , Stephen G. Shuma , Oscar C. Strohacker , Mark S. Styduhar , Peter A. Twombly , Andrew S. Wienick , Paul S. Zuchowski
发明人： Kenneth J. Goodnow , Stephen G. Shuma , Oscar C. Strohacker , Mark S. Styduhar , Peter A. Twombly , Andrew S. Wienick , Paul S. Zuchowski
IPC分类号： G06F1/00 , G06F11/00
CPC分类号： H03K19/00392
摘要： Disclosed is a design structure for an associated first system for extending product life of a second system in the presence of phenomena that cause the exhibition of both performance degradation and recovery properties within system devices. The first system includes duplicate devices incorporated into the second system (e.g., on a shared bus). These duplicate devices are adapted to independently perform the same function within that second system. Reference signal generators, a reference signal comparator, a power controller and a state machine, working in combination, can be adapted to seamlessly switch performance of that same function within the second system between the duplicate devices based on a measurement of performance degradation to allow for device recovery. A predetermined policy accessible by the state machine dictates when and whether or not to initiate a switch.
摘要翻译：公开了一种用于相关联的第一系统的设计结构，用于在存在导致在系统设备内展现性能下降和恢复性能的现象的情况下延长第二系统的产品寿命。第一系统包括并入第二系统中的重复设备（例如，在共享总线上）。这些重复设备适于在该第二系统内独立地执行相同的功能。参考信号发生器，参考信号比较器，功率控制器和状态机组合起来可以适应于基于性能下降的测量来在复制设备之间的第二系统内的相同功能的无缝切换性能，以允许设备恢复。状态机可访问的预定策略指示何时以及是否启动切换。

6. 发明申请

US20090150726A1 METHOD AND SYSTEM FOR EXTENDING THE USEFUL LIFE OF ANOTHER SYSTEM 有权
标题翻译：用于延长其他系统有用寿命的方法和系统
公开(公告)号：US20090150726A1
公开(公告)日：2009-06-11
申请号：US12138480
申请日：2008-06-13
申请人： Kenneth J. Goodnow , Stephen G. Shuma , Oscar C. Strohacker , Mark S. Styduhar , Peter A. Twombly , Andrew S. Wienick , Paul S. Zuchowski
发明人： Kenneth J. Goodnow , Stephen G. Shuma , Oscar C. Strohacker , Mark S. Styduhar , Peter A. Twombly , Andrew S. Wienick , Paul S. Zuchowski
IPC分类号： G06F11/30
CPC分类号： G06F11/008
摘要： Disclosed are embodiments of a method and an associated first system for extending product life of a second system in the presence of phenomena that cause the exhibition of both performance degradation and recovery properties within system devices. The first system includes duplicate devices incorporated into the second system (e.g., on a shared bus). These duplicate devices are adapted to independently perform the same function within that second system. Reference signal generators, a reference signal comparator, a power controller and a state machine, working in combination, can be adapted to seamlessly switch performance of that same function within the second system between the duplicate devices based on a measurement of performance degradation to allow for device recovery. A predetermined policy accessible by the state machine dictates when and whether or not to initiate a switch.
摘要翻译：公开了一种方法和相关联的第一系统的实施例，用于在存在导致在系统设备内展现性能下降和恢复性能的现象的情况下延长第二系统的产品寿命。第一系统包括并入第二系统中的重复设备（例如，在共享总线上）。这些重复设备适于在该第二系统内独立地执行相同的功能。参考信号发生器，参考信号比较器，功率控制器和状态机组合起来可以适应于基于性能下降的测量来在复制设备之间的第二系统内的相同功能的无缝切换性能，以允许设备恢复。状态机可访问的预定策略指示何时以及是否启动切换。

7. 发明授权

US07437620B2 Method and system for extending the useful life of another system 失效
标题翻译：延长其他系统使用寿命的方法和系统
公开(公告)号：US07437620B2
公开(公告)日：2008-10-14
申请号：US11164646
申请日：2005-11-30
申请人： Kenneth J. Goodnow , Stephen G. Shuma , Oscar C. Strohacker , Mark S. Styduhar , Peter A. Twombly , Andrew S. Wienick , Paul S. Zuchowski
发明人： Kenneth J. Goodnow , Stephen G. Shuma , Oscar C. Strohacker , Mark S. Styduhar , Peter A. Twombly , Andrew S. Wienick , Paul S. Zuchowski
IPC分类号： G06F11/00
CPC分类号： G06F11/008
摘要： Disclosed are embodiments of a method and an associated first system for extending product life of a second system in the presence of phenomena that cause the exhibition of both performance degradation and recovery properties within system devices. The first system includes duplicate devices incorporated into the second system (e.g., on a shared bus). These duplicate devices are adapted to independently perform the same function within that second system. Reference signal generators, a reference signal comparator, a power controller and a state machine, working in combination, can be adapted to seamlessly switch performance of that same function within the second system between the duplicate devices based on a measurement of performance degradation to allow for device recovery. A predetermined policy accessible by the state machine dictates when and whether or not to initiate a switch.
摘要翻译：公开了一种方法和相关联的第一系统的实施例，用于在存在导致在系统设备内展现性能下降和恢复性能的现象的情况下延长第二系统的产品寿命。第一系统包括并入第二系统中的重复设备（例如，在共享总线上）。这些重复设备适于在该第二系统内独立地执行相同的功能。参考信号发生器，参考信号比较器，功率控制器和状态机组合起来可以适应于基于性能下降的测量来在复制设备之间的第二系统内的相同功能的无缝切换性能，以允许设备恢复。状态机可访问的预定策略指示何时以及是否启动切换。

8. 发明授权

US07793163B2 Method and system for extending the useful life of another system 有权
标题翻译：延长其他系统使用寿命的方法和系统
公开(公告)号：US07793163B2
公开(公告)日：2010-09-07
申请号：US12138480
申请日：2008-06-13
申请人： Kenneth J. Goodnow , Stephen G. Shuma , Oscar C. Strohacker , Mark S. Styduhar , Peter A. Twombly , Andrew S. Wienick , Paul S. Zuchowski
发明人： Kenneth J. Goodnow , Stephen G. Shuma , Oscar C. Strohacker , Mark S. Styduhar , Peter A. Twombly , Andrew S. Wienick , Paul S. Zuchowski
IPC分类号： G06F11/00
CPC分类号： G06F11/008
摘要： Disclosed are embodiments of a method and an associated first system for extending product life of a second system in the presence of phenomena that cause the exhibition of both performance degradation and recovery properties within system devices. The first system includes duplicate devices incorporated into the second system (e.g., on a shared bus). These duplicate devices are adapted to independently perform the same function within that second system. Reference signal generators, a reference signal comparator, a power controller and a state machine, working in combination, can be adapted to seamlessly switch performance of that same function within the second system between the duplicate devices based on a measurement of performance degradation to allow for device recovery. A predetermined policy accessible by the state machine dictates when and whether or not to initiate a switch.
摘要翻译：公开了一种方法和相关联的第一系统的实施例，用于在存在导致在系统设备内展现性能下降和恢复性能的现象的情况下延长第二系统的产品寿命。第一系统包括并入第二系统中的重复设备（例如，在共享总线上）。这些重复设备适于在该第二系统内独立地执行相同的功能。参考信号发生器，参考信号比较器，功率控制器和状态机组合起来可以适应于基于性能下降的测量来在复制设备之间的第二系统内的相同功能的无缝切换性能，以允许设备恢复。状态机可访问的预定策略指示何时以及是否启动切换。

9. 发明申请

US20080168284A1 Design Structure for System for Extending the useful Life of Another System 失效
标题翻译：扩展系统使用寿命的系统设计结构
公开(公告)号：US20080168284A1
公开(公告)日：2008-07-10
申请号：US12051001
申请日：2008-03-19
申请人： Kenneth J. Goodnow , Stephen G. Shuma , Oscar C. Strohacker , Mark S. Styduhar , Peter A. Twombly , Andrew S. Wienick , Paul S. Zuchowski
发明人： Kenneth J. Goodnow , Stephen G. Shuma , Oscar C. Strohacker , Mark S. Styduhar , Peter A. Twombly , Andrew S. Wienick , Paul S. Zuchowski
IPC分类号： G06F1/00
CPC分类号： H03K19/00392
摘要： Disclosed is a design structure for an associated first system for extending product life of a second system in the presence of phenomena that cause the exhibition of both performance degradation and recovery properties within system devices. The first system includes duplicate devices incorporated into the second system (e.g., on a shared bus). These duplicate devices are adapted to independently perform the same function within that second system. Reference signal generators, a reference signal comparator, a power controller and a state machine, working in combination, can be adapted to seamlessly switch performance of that same function within the second system between the duplicate devices based on a measurement of performance degradation to allow for device recovery. A predetermined policy accessible by the state machine dictates when and whether or not to initiate a switch.
摘要翻译：公开了一种用于相关联的第一系统的设计结构，用于在存在导致在系统设备内展现性能下降和恢复性能的现象的情况下延长第二系统的产品寿命。第一系统包括并入第二系统中的重复设备（例如，在共享总线上）。这些重复设备适于在该第二系统内独立地执行相同的功能。参考信号发生器，参考信号比较器，功率控制器和状态机组合起来可以适应于基于性能下降的测量来在复制设备之间的第二系统内的相同功能的无缝切换性能，以允许设备恢复。状态机可访问的预定策略指示何时以及是否启动切换。

10. 发明申请

US20090108320A1 TUNABLE CAPACITOR 有权
标题翻译： TUNABLE电容器
公开(公告)号：US20090108320A1
公开(公告)日：2009-04-30
申请号：US11923864
申请日：2007-10-25
申请人： Corey K. Barrows , Joseph A. Iadanza , Edward J. Nowak , Douglas W. Stout , Mark S. Styduhar
发明人： Corey K. Barrows , Joseph A. Iadanza , Edward J. Nowak , Douglas W. Stout , Mark S. Styduhar
IPC分类号： H01L29/94
CPC分类号： H01L29/94
摘要： Disclosed are embodiments of a design structure transistor that operates as a capacitor and an associated method of tuning capacitance within such a capacitor. The embodiments of the capacitor comprise a field effect transistor with front and back gates above and below a semiconductor layer, respectively. The capacitance value exhibited by the capacitor can be selectively varied between two different values by changing the voltage condition in a source/drain region of the transistor, e.g., using a switch or resistor between the source/drain region and a voltage supply. Alternatively, the capacitance value exhibited by the capacitor can be selectively varied between multiple different values by changing voltage conditions in one or more of multiple channel regions that are flanked by multiple source/drain regions within the transistor. The capacitor will exhibit different capacitance values depending upon the conductivity in each of the channel regions.
摘要翻译：公开了作为电容器操作的设计结构晶体管的实施例以及在这种电容器内调谐电容的相关方法。电容器的实施例包括分别在半导体层上方和下方具有前栅极和后栅极的场效应晶体管。通过改变晶体管的源极/漏极区域中的电压条件，例如使用源极/漏极区域和电压源之间的开关或电阻器，可以通过改变晶体管的源极/ 或者，可以通过改变在晶体管内侧面有多个源极/漏极区域的多个沟道区域中的一个或多个中的电压条件来选择性地在多个不同值之间变化由电容器呈现的电容值。根据每个通道区域中的电导率，电容器将呈现不同的电容值。

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