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    • 9. 发明授权
    • Sacrificial benzocyclobutene/norbornene polymers for making air gap semiconductor devices
    • 用于制造气隙半导体器件的牺牲苯并环丁烯/降冰片烯聚合物
    • US07598114B2
    • 2009-10-06
    • US10544428
    • 2004-01-30
    • Youngfu LiRobert A. KirchhoffJason Q. NiuKenneth L. Foster
    • Youngfu LiRobert A. KirchhoffJason Q. NiuKenneth L. Foster
    • H01L51/40
    • H01L21/02118H01L21/312H01L21/7682
    • A method of forming an air gap within a semiconductor structure by the steps of: (a) using a sacrificial polymer to occupy a space in a semiconductor structure; and (b) heating the semiconductor structure to decompose the sacrificial polymer leaving an air gap within the semiconductor structure, wherein the sacrificial polymer of step (a) is: (a) a copolymer of 5-ethylidene-2-norbornene and vinylbenzocyclobutene (or a vinylbenzocyclobutene derivative); or (b) a copolymer of 5-ethylidene-2-norbornene and 5-(3benzocyclobutylidene)-2-norbornene; or (c) a polymer of 5-(3benzocyclobutylidene)-2-norbornene. In addition, a semiconductor structure, having a sacrificial polymer positioned between conductor lines, wherein the sacrificial polymer is: (a) a copolymer of 5-ethylidene-2-norbornene and vinylbenzocyclobutene (or a vinylbenzocyclobutene derivative); or (b) a copolymer of 5-ethylidene-2-norbornene and 5-(3benzocyclobutylidene)-2-norbornene; or (c) a polymer of 5-(3benzocyclobutylidene)-2-norbornene.
    • 一种通过以下步骤在半导体结构内形成气隙的方法:(a)使用牺牲聚合物占据半导体结构中的空间; 步骤(a)的牺牲聚合物是:(a)5-亚乙基-2-降冰片烯和乙烯基苯并环丁烯的共聚物(或者(b)加热半导体结构以分解在半导体结构内留下空隙的牺牲聚合物,其中步骤 乙烯基苯并环丁烯衍生物); 或(b)5-亚乙基-2-降冰片烯与5-(3-苯并环丁基)-2-降冰片烯的共聚物; 或(c)5-(3-苯并环丁基)-2-降冰片烯的聚合物。 另外,具有位于导体线之间的牺牲聚合物的半导体结构,其中所述牺牲聚合物是:(a)5-亚乙基-2-降冰片烯和乙烯基苯并环丁烯(或乙烯基苯并环丁烯衍生物)的共聚物; 或(b)5-亚乙基-2-降冰片烯与5-(3-苯并环丁基)-2-降冰片烯的共聚物; 或(c)5-(3-苯并环丁基)-2-降冰片烯的聚合物。