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1. 发明申请

US20080099040A1 INTEGRATED METHOD FOR REMOVAL OF HALOGEN RESIDUES FROM ETCHED SUBSTRATES IN A PROCESSING SYSTEM 有权
标题翻译：用于从加工系统中的蚀刻基板去除卤素残留物的综合方法
公开(公告)号：US20080099040A1
公开(公告)日：2008-05-01
申请号：US11676161
申请日：2007-02-16
申请人： Kenneth J. Bahng , Matthew Fenton Davis , Thorsten Lill , Steven H. Kim
发明人： Kenneth J. Bahng , Matthew Fenton Davis , Thorsten Lill , Steven H. Kim
IPC分类号： C25F3/00 , B08B7/00
CPC分类号： H01L21/02071 , H01L21/02057 , H01L21/67115 , Y10S414/135 , Y10S438/906 , Y10S438/963
摘要： A method and system for removing volatile residues from a substrate are provided. In one embodiment, the volatile residues removal process is performed en-routed in the system while performing a halogen treatment process on the substrate. The volatile residues removal process is performed in the system other than the halogen treatment processing chamber and a FOUP. In one embodiment, a method for volatile residues from a substrate includes providing a processing system having a vacuum tight platform, processing a substrate in a processing chamber of the platform with a chemistry comprising halogen, and treating the processed substrate in the platform to release volatile residues from the treated substrate.
摘要翻译：提供了用于从基板去除挥发性残留物的方法和系统。在一个实施方案中，挥发性残余物去除过程在系统中进行，同时在衬底上进行卤素处理过程。在除卤素处理室和FOUP以外的系统中进行挥发性残渣去除处理。在一个实施方案中，用于来自基材的挥发性残余物的方法包括提供具有真空密封平台的处理系统，在平台的处理室中处理基材，其中包含卤素的化学物质，以及处理所述平台中的经处理的基材以释放挥发性来自处理过的底物的残留物。

2. 发明授权

US07846845B2 Integrated method for removal of halogen residues from etched substrates in a processing system 有权
标题翻译：用于在处理系统中从蚀刻的基底去除卤素残留的综合方法
公开(公告)号：US07846845B2
公开(公告)日：2010-12-07
申请号：US11676161
申请日：2007-02-16
申请人： Kenneth J. Bahng , Matthew Fenton Davis , Thorsten Lill , Steven H. Kim
发明人： Kenneth J. Bahng , Matthew Fenton Davis , Thorsten Lill , Steven H. Kim
IPC分类号： H01L21/302 , H01L21/461 , B08B6/00 , C25F1/00 , C25F3/30 , C25F5/00 , H01L21/306
CPC分类号： H01L21/02071 , H01L21/02057 , H01L21/67115 , Y10S414/135 , Y10S438/906 , Y10S438/963
摘要： A method and system for removing volatile residues from a substrate are provided. In one embodiment, the volatile residues removal process is performed en-routed in the system while performing a halogen treatment process on the substrate. The volatile residues removal process is performed in the system other than the halogen treatment processing chamber and a FOUP. In one embodiment, a method for volatile residues from a substrate includes providing a processing system having a vacuum tight platform, processing a substrate in a processing chamber of the platform with a chemistry comprising halogen, and treating the processed substrate in the platform to release volatile residues from the treated substrate.
摘要翻译：提供了用于从基板去除挥发性残留物的方法和系统。在一个实施方案中，挥发性残余物去除过程在系统中进行，同时在衬底上进行卤素处理过程。在除卤素处理室和FOUP以外的系统中进行挥发性残渣去除处理。在一个实施方案中，用于来自基材的挥发性残余物的方法包括提供具有真空密封平台的处理系统，在平台的处理室中处理基材，其中包含卤素的化学物质，以及处理所述平台中的经处理的基材以释放挥发性来自处理过的底物的残留物。

3. 发明授权

US07946759B2 Substrate temperature measurement by infrared transmission 有权
标题翻译：通过红外线传输的基板温度测量
公开(公告)号：US07946759B2
公开(公告)日：2011-05-24
申请号：US11676092
申请日：2007-02-16
申请人： Matthew Fenton Davis , Kenneth J. Bahng
发明人： Matthew Fenton Davis , Kenneth J. Bahng
IPC分类号： G01K1/02 , G01J5/02 , G01R31/00 , H01L21/02
CPC分类号： G01J5/0003 , G01J5/0007 , G01J5/02 , G01J5/025 , G01J5/026 , G01J2005/0051
摘要： A method and apparatus for measuring a substrate temperature during a thermal process are provided. In one embodiment, an apparatus for measuring a substrate temperature during a thermal process includes an evacutable chamber, a substrate heater positioned to heat a substrate disposed in the chamber, and a sensor positioned to receive energy transmitted through the substrate while the substrate is heated by the substrate heater, wherein the sensor is configured to detect a metric indicative of transmittance. In another embodiment, a method for measuring a substrate temperature includes heating a substrate disposed in a chamber, detecting a change in transmittance of the substrate while heating, and determining a temperature of the substrate based on the change in transmittance.
摘要翻译：提供了一种用于在热处理期间测量衬底温度的方法和装置。在一个实施例中，用于在热处理期间测量衬底温度的装置包括可抽空室，定位成加热设置在腔室中的衬底的衬底加热器，以及传感器，定位成在衬底被加热的同时接收透过衬底的能量衬底加热器，其中传感器被配置为检测指示透射率的度量。在另一个实施例中，用于测量衬底温度的方法包括加热设置在腔室中的衬底，检测加热时衬底的透射率的变化，以及基于透射率的变化来确定衬底的温度。

4. 发明申请

US20090218314A1 ADVANCED PROCESS SENSING AND CONTROL USING NEAR INFRARED SPECTRAL REFLECTOMETRY 有权
标题翻译：使用近红外光谱反射光谱的先进过程感测和控制
公开(公告)号：US20090218314A1
公开(公告)日：2009-09-03
申请号：US12040698
申请日：2008-02-29
申请人： Matthew Fenton Davis , Lei Lian
发明人： Matthew Fenton Davis , Lei Lian
IPC分类号： G02B6/04 , C23F1/00
CPC分类号： H01L21/67253 , G01N21/73 , G02B6/04 , G02B6/40 , H01J37/32935 , H01J37/32972
摘要： Embodiments described herein provide a method and apparatus for obtaining process information in a substrate manufacturing process using plasma. In one embodiment, a chamber is provided having one or more optical metrology modules that are positioned such that optical energy from the plasma process is detected at substantially orthogonal angles. Metrics derived from detected optical energy may be used for endpoint determination, substrate temperature, and monitoring of critical dimensions on the substrate.
摘要翻译：本文描述的实施例提供了一种在使用等离子体的基板制造工艺中获得工艺信息的方法和装置。在一个实施例中，提供具有一个或多个光学测量模块的腔室，其被定位成使得来自等离子体处理的光能以基本上正交的角度被检测。从检测到的光能导出的指标可用于终点测定，基板温度和基板上临界尺寸的监测。

5. 发明申请

US20120291952A1 METHOD AND SYSTEM FOR MONITORING AN ETCH PROCESS 审中-公开
标题翻译：监测过程的方法和系统
公开(公告)号：US20120291952A1
公开(公告)日：2012-11-22
申请号：US13564963
申请日：2012-08-02
申请人： Matthew Fenton Davis , John M. Yamartino , Lei Lian
发明人： Matthew Fenton Davis , John M. Yamartino , Lei Lian
IPC分类号： G06F15/00 , B44C1/22
CPC分类号： H01J37/32935 , G03F7/70625 , H01J37/32963 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： A method and apparatus for monitoring an etch process. The etch process may be monitored using measurement information (e.g., critical dimensions (CD), layer thickness, and the like) provided ex-situ with respect to the etch process in combination with in-situ monitoring (e.g., spectroscopy, interferometry, scatterometry, reflectometry, and the like) performed during the etch process. The ex-situ measurement information in combination with the in-situ monitoring may be used to monitor for example, an endpoint of an etch process, an etch depth profile of a feature formed on a substrate, fault detection of an integrated circuit manufacturing process, and the like.
摘要翻译：一种用于监测蚀刻工艺的方法和装置。可以使用与原位监测（例如，光谱学，干涉测量，散射测量法）相关的蚀刻过程非位置提供的测量信息（例如，临界尺寸（CD），层厚度等）来监测蚀刻工艺，反射测量等）。与现场监测结合的非原位测量信息可以用于监测例如蚀刻工艺的端点，形成在衬底上的特征的蚀刻深度分布，集成电路制造工艺的故障检测，等等。

6. 发明授权

US08130382B2 Determining endpoint in a substrate process 有权
标题翻译：确定底物过程中的终点
公开(公告)号：US08130382B2
公开(公告)日：2012-03-06
申请号：US13171269
申请日：2011-06-28
申请人： Lei Lian , Matthew Fenton Davis
发明人： Lei Lian , Matthew Fenton Davis
IPC分类号： G01B11/02
CPC分类号： H01J37/32935 , G01B11/0675 , G01B11/0683 , H01J37/32963
摘要： An endpoint detection method for detecting an endpoint of a process comprises determining a reflectance spectrum of light reflected from a substrate, the light having a wavelength, processing the substrate while light having the wavelength is reflected from the substrate, detecting light having the wavelength after the light is reflected from the substrate, generating a signal trace of the intensity of the reflected light and normalizing the signal trace with the reflectance spectrum of the light. The normalized signal trace can then be evaluated to determine an endpoint of the process.
摘要翻译：用于检测处理的端点的端点检测方法包括：确定从衬底反射的光的反射光谱，具有波长的光，处理衬底，同时具有波长的光从衬底反射，检测具有波长的光光从衬底反射，产生反射光强度的信号迹线，并用光的反射光谱对信号迹线进行归一化。然后可以评估归一化信号迹线以确定过程的端点。

7. 发明授权

US08486194B2 Apparatus for efficient removal of halogen residues from etched substrates 有权
标题翻译：用于从蚀刻的基板有效去除卤素残留物的装置
公开(公告)号：US08486194B2
公开(公告)日：2013-07-16
申请号：US13652814
申请日：2012-10-16
申请人： Kenneth J. Bhang , Matthew Fenton Davis , Travis Morey , James D. Carducci
发明人： Kenneth J. Bhang , Matthew Fenton Davis , Travis Morey , James D. Carducci
IPC分类号： C23C16/00
CPC分类号： H01L21/02071 , H01L21/67109 , H01L21/67115 , H01L21/67201 , H01L21/68728 , H01L21/68785 , Y10T428/24008 , Y10T428/24628
摘要： An apparatus for removing volatile residues from a substrate is provided. In one embodiment, an apparatus for removing halogen-containing residues from a substrate includes a chamber suitable for operating maintaining a vacuum therein and a heat module positioned to heat a substrate disposed in the chamber. The apparatus for removing halogen-containing residues from a substrate also includes at least one of A) a temperature controlled pedestal having a projection extending radially therefrom suitable for supporting the temperature control pedestal on a ledge of the chamber body, the projection thermally isolating the base from the chamber body; B) a pair of substrate holders that include two support flanges extending radially inward from an inner edge of an arc-shaped body, each support flange having a substrate support step that includes a sloped landing; or C) a domed window.
摘要翻译：提供了用于从基板除去挥发性残留物的装置。在一个实施例中，用于从基板去除含卤素残余物的装置包括适于在其中维持真空的操作的腔室和定位成加热设置在腔室中的衬底的热模块。用于从基板除去含卤素残留物的设备还包括以下中的至少一个：A）温度控制基座，其具有径向延伸的突出物，其适于将温度控制基座支撑在腔体的凸缘上，所述突起热隔离基座从室内; B）一对基板保持器，其包括从弧形体的内边缘径向向内延伸的两个支撑凸缘，每个支撑凸缘具有包括倾斜着陆部的基板支撑台阶; 或C）圆顶窗。

8. 发明申请

US20090316749A1 SUBSTRATE TEMPERATURE MEASUREMENT BY INFRARED TRANSMISSION IN AN ETCH PROCESS 审中-公开
标题翻译：通过红外传输在蚀刻过程中的基板温度测量
公开(公告)号：US20090316749A1
公开(公告)日：2009-12-24
申请号：US12144157
申请日：2008-06-23
申请人： Matthew Fenton Davis
发明人： Matthew Fenton Davis
IPC分类号： G01J5/12
CPC分类号： G01J5/0003 , G01J5/0007
摘要： A method and apparatus for measuring a temperature during a process are provided. In one embodiment, an apparatus for measuring a substrate temperature during an etching process is provided that includes a chamber body, a chamber lid enclosing the chamber body and a substrate support assembly. A plurality of windows formed in a substrate supporting surface of the substrate support assembly. A signal generator is optically coupled through the substrate support assembly to the windows. A sensor is positioned above the substrate support and aligned to receive energy transmitted from the signal generator through at least one of the windows, wherein the sensor is configured to detect a metric indicative of transmittance.
摘要翻译：提供了一种用于在处理过程中测量温度的方法和装置。在一个实施例中，提供了一种用于在蚀刻工艺期间测量衬底温度的装置，其包括室主体，封闭室主体的室盖和衬底支撑组件。形成在基板支撑组件的基板支撑表面中的多个窗口。信号发生器通过基板支撑组件光学耦合到窗户。传感器位于衬底支撑件上方并对准以接收从信号发生器通过至少一个窗口传输的能量，其中传感器被配置为检测指示透射率的度量。

9. 发明授权

US06485254B1 Energy dissipating coupling 失效
标题翻译：能量消散耦合
公开(公告)号：US06485254B1
公开(公告)日：2002-11-26
申请号：US09692902
申请日：2000-10-19
申请人： Matthew Fenton Davis
发明人： Matthew Fenton Davis
IPC分类号： F04D1904
CPC分类号： F04D19/04 , F04D27/0292 , F04D29/601
摘要： An apparatus and method for coupling a device to a semiconductor processing chamber is provided. The apparatus generally comprises a first ring disposed proximate a second ring. An energy dissipating media is disposed between the first and second rings. Upon the application of a torsional force in excess of a predetermined amount, the first ring rotates relative to the second ring. The energy dissipating media absorbs or dissipates some or all the energy applied to the first and second rings.
摘要翻译：提供了一种用于将器件耦合到半导体处理室的装置和方法。该装置通常包括靠近第二环设置的第一环。能量消散介质设置在第一和第二环之间。当施加超过预定量的扭转力时，第一环相对于第二环旋转。能量消散介质吸收或消散施加到第一和第二环的一些或全部能量。

10. 发明授权

US08009938B2 Advanced process sensing and control using near infrared spectral reflectometry 有权
标题翻译：使用近红外光谱反射计的先进工艺感测和控制
公开(公告)号：US08009938B2
公开(公告)日：2011-08-30
申请号：US12040698
申请日：2008-02-29
申请人： Matthew Fenton Davis , Lei Lian
发明人： Matthew Fenton Davis , Lei Lian
IPC分类号： G02B6/00 , G02B6/04 , C23F1/00 , G01J3/45 , C03B37/023
CPC分类号： H01L21/67253 , G01N21/73 , G02B6/04 , G02B6/40 , H01J37/32935 , H01J37/32972
摘要： Embodiments described herein provide a method and apparatus for obtaining process information in a substrate manufacturing process using plasma. In one embodiment, a chamber is provided having one or more optical metrology modules that are positioned such that optical energy from the plasma process is detected at substantially orthogonal angles. Metrics derived from detected optical energy may be used for endpoint determination, substrate temperature, and monitoring of critical dimensions on the substrate.
摘要翻译：本文描述的实施例提供了一种在使用等离子体的基板制造工艺中获得工艺信息的方法和装置。在一个实施例中，提供具有一个或多个光学测量模块的腔室，其被定位成使得来自等离子体处理的光能以基本上正交的角度被检测。从检测到的光能导出的指标可用于终点测定，基板温度和基板上临界尺寸的监测。

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