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1. 发明申请

US20100091803A1 Solid-state high-luminance far ultraviolet light emitting element including highly pure hexagonal boron nitride single crystal, solid-state laser, and solid-state light emitting apparatus 失效
标题翻译：包括高纯度六方晶系氮化硼单晶，固体激光器和固态发光装置的固态高亮度远紫外发光元件
公开(公告)号：US20100091803A1
公开(公告)日：2010-04-15
申请号：US12588462
申请日：2009-10-16
申请人： Kenji Watanabe , Takashi Taniguchi , Satoshi Koizumi , Hisao Kanda , Masayuki Katagiri , Takatoshi Yamada , Nesladek Milos
发明人： Kenji Watanabe , Takashi Taniguchi , Satoshi Koizumi , Hisao Kanda , Masayuki Katagiri , Takatoshi Yamada , Nesladek Milos
IPC分类号： H01S3/30 , H01J1/62
CPC分类号： C30B29/38 , B01J3/062 , B01J3/065 , B01J2203/0645 , B01J2203/066 , B01J2203/069 , C09K11/63 , H01S5/32341
摘要： A solid-state far ultraviolet light emitting element is formed by a hexagonal boron nitride single crystal, excited by electron beam irradiation to emit far ultraviolet light having a maximum light emission peak in a far ultraviolet region at a wavelength of 235 nm or shorter.
摘要翻译：固态远紫外线发光元件是通过电子束照射激发的六方氮化硼单晶形成的，以在波长235nm以下的远紫外区域发射具有最大发光峰的远紫外光。

2. 发明申请

US20090078851A1 Far Ultraviolet With High Luminance Emitting High-Purity Hexagonal Boron Nitride Monocrystalline Powder And Method Of Manufacturing The Same 有权
标题翻译：具有高亮度发射高纯度六方氮化硼单晶粉末的远紫外线及其制造方法
公开(公告)号：US20090078851A1
公开(公告)日：2009-03-26
申请号：US11988033
申请日：2006-07-03
申请人： Kenji Watanabe , Takashi Taniguchi , Hisao Kanda
发明人： Kenji Watanabe , Takashi Taniguchi , Hisao Kanda
IPC分类号： G01J1/32 , C09K11/08 , H01J1/62
CPC分类号： C04B35/583 , B01J3/062 , B01J2203/0645 , B01J2203/066 , C01B21/064 , C01P2002/76 , C01P2002/84 , C01P2006/80 , C04B2235/3852 , C04B2235/767 , C09K11/63 , G01T3/06
摘要： While high-purity hexagonal boron nitride monocrystal (hBN) obtained by way of a high temperature/high-pressure treatment in the presence of a high-purity solvent has excellent properties in terms of far-UV luminescence characteristics, it has drawbacks including that it can be easily adversely affected by mechanical vibrations and impetus, that monocrystal shows a poor morphological retentiveness and that the luminescence characteristics fluctuate to shift the selected and set wavelength. The present invention can overcome the drawbacks of being easily affected by vibrations and showing a poor morphological retentiveness by grinding down the monocrystal obtained by a solvent/refining process into powder and applying the powder to a light emitting surface. Thus, the present invention provides crystal powder to be used for a far-UV luminescence device showing excellent luminescence characteristics that are stable and do not fluctuate.
摘要翻译：虽然在高纯度溶剂存在下通过高温/高压处理获得的高纯度六方氮化硼单晶（hBN）在远紫外发光特性方面具有优异的性能，但其缺点包括：可以容易地受到机械振动和动力的不利影响，单晶显示出差的形态保持性，并且发光特性波动以移动所选择的和设定的波长。本发明可以克服通过将通过溶剂/精制过程获得的单晶研磨成粉末并将粉末施加到发光表面上的容易受振动影响并且显示不良形态保持性的缺点。因此，本发明提供了用于远紫外发光装置的结晶粉末，其表现出稳定且不波动的优异的发光特性。

3. 发明授权

US07863554B2 Far ultraviolet with high luminance emitting high-purity hexagonal boron nitride monocrystalline powder and method of manufacturing the same 有权
标题翻译：具有高亮度发射高纯度六方氮化硼单晶粉末的远紫外线及其制造方法
公开(公告)号：US07863554B2
公开(公告)日：2011-01-04
申请号：US11988033
申请日：2006-07-03
申请人： Kenji Watanabe , Takashi Taniguchi , Hisao Kanda
发明人： Kenji Watanabe , Takashi Taniguchi , Hisao Kanda
IPC分类号： H01L31/00
CPC分类号： C04B35/583 , B01J3/062 , B01J2203/0645 , B01J2203/066 , C01B21/064 , C01P2002/76 , C01P2002/84 , C01P2006/80 , C04B2235/3852 , C04B2235/767 , C09K11/63 , G01T3/06
摘要： While high-purity hexagonal boron nitride monocrystal (hBN) obtained by way of a high temperature/high-pressure treatment in the presence of a high-purity solvent has excellent properties in terms of far-UV luminescence characteristics, it has drawbacks including that it can be easily adversely affected by mechanical vibrations and impetus, that monocrystal shows a poor morphological retentiveness and that the luminescence characteristics fluctuate to shift the selected and set wavelength. The present invention can overcome the drawbacks of being easily affected by vibrations and showing a poor morphological retentiveness by grinding down the monocrystal obtained by a solvent/refining process into powder and applying the powder to a light emitting surface. Thus, the present invention provides crystal powder to be used for a far-UV luminescence device showing excellent luminescence characteristics that are stable and do not fluctuate.
摘要翻译：虽然在高纯度溶剂存在下通过高温/高压处理获得的高纯度六方氮化硼单晶（hBN）在远紫外发光特性方面具有优异的性能，但其缺点包括：可以容易地受到机械振动和动力的不利影响，单晶显示出差的形态保持性，并且发光特性波动以移动所选择的和设定的波长。本发明可以克服通过将通过溶剂/精制过程获得的单晶研磨成粉末并将粉末施加到发光表面上的容易受振动影响并且显示不良形态保持性的缺点。因此，本发明提供了用于远紫外发光装置的结晶粉末，其表现出稳定且不波动的优异的发光特性。

4. 发明授权

US08529696B2 Method for producing hexagonal boron nitride single crystals 失效
标题翻译：生产六方氮化硼单晶的方法
公开(公告)号：US08529696B2
公开(公告)日：2013-09-10
申请号：US13561695
申请日：2012-07-30
申请人： Kenji Watanabe , Takashi Taniguchi , Satoshi Koizumi , Hisao Kanda , Masayuki Katagiri , Takatoshi Yamada , Nesladek Milos
发明人： Kenji Watanabe , Takashi Taniguchi , Satoshi Koizumi , Hisao Kanda , Masayuki Katagiri , Takatoshi Yamada , Nesladek Milos
IPC分类号： C30B9/00
CPC分类号： C30B29/38 , B01J3/062 , B01J3/065 , B01J2203/0645 , B01J2203/066 , B01J2203/069 , C09K11/63 , H01S5/32341
摘要： A method for producing hexagonal boron nitride single crystals including mixing boron nitride crystals with a solvent thereby obtaining a mixture, heating and melting the mixture under high-temperature and high-pressure thereby obtaining a melted mixture, and recrystallizing the melted mixture thereby producing hexagonal boron nitride single crystals, wherein the solvent is boronitride of alkaline earth metal, or boronitride of alkali metal and the boronitride of alkaline earth metal.
摘要翻译：一种生产六方氮化硼单晶的方法，包括将氮化硼晶体与溶剂混合从而获得混合物，在高温高压下加热熔化混合物，从而获得熔融混合物，并将熔融混合物重结晶，从而产生六方硼氮化物单晶，其中溶剂是碱土金属的硼氮化物，碱金属的硼氮化物和碱土金属的硼氮化物。

5. 发明授权

US08258603B2 Solid-state high-luminance far ultraviolet light emitting element including highly pure hexagonal boron nitride single crystal 失效
标题翻译：固态高亮度远紫外发光元件包括高纯度六方氮化硼单晶
公开(公告)号：US08258603B2
公开(公告)日：2012-09-04
申请号：US12588462
申请日：2009-10-16
申请人： Kenji Watanabe , Takashi Taniguchi , Satoshi Koizumi , Hisao Kanda , Masayuki Katagiri , Takatoshi Yamada , Nesladek Milos
发明人： Kenji Watanabe , Takashi Taniguchi , Satoshi Koizumi , Hisao Kanda , Masayuki Katagiri , Takatoshi Yamada , Nesladek Milos
IPC分类号： H01L31/00
CPC分类号： C30B29/38 , B01J3/062 , B01J3/065 , B01J2203/0645 , B01J2203/066 , B01J2203/069 , C09K11/63 , H01S5/32341
摘要： A solid-state far ultraviolet light emitting element is formed by a hexagonal boron nitride single crystal, excited by electron beam irradiation to emit far ultraviolet light having a maximum light emission peak in a far ultraviolet region at a wavelength of 235 nm or shorter.
摘要翻译：固态远紫外线发光元件是通过电子束照射激发的六方氮化硼单晶形成的，以在波长235nm以下的远紫外区域发射具有最大发光峰的远紫外光。

6. 发明申请

US20060185577A1 Single crystal of highly purified hexagonal boron nitride capable of far ultraviolet high-luminance light emission, process for producing the same, far ultraviolet high-luminance light emitting device including the single crystal, and utilizing the device, solid laser and solid light emitting unit 审中-公开
标题翻译：能够实现远紫外高亮度发光的高纯度六方晶氮化硼的单晶，其制造方法，具有单晶的远紫外线高亮度发光元件，利用该固体激光器和固体发光单元
公开(公告)号：US20060185577A1
公开(公告)日：2006-08-24
申请号：US10566722
申请日：2004-11-17
申请人： Kenji Watanabe , Takashi Taniguchi , Satoshi Koizumi , Hisao Kanda , Masayuki Katagiri , Takatoshi Yamada , Nesladek Milos
发明人： Kenji Watanabe , Takashi Taniguchi , Satoshi Koizumi , Hisao Kanda , Masayuki Katagiri , Takatoshi Yamada , Nesladek Milos
IPC分类号： H01L21/322
CPC分类号： C30B29/38 , B01J3/062 , B01J3/065 , B01J2203/0645 , B01J2203/066 , B01J2203/069 , C09K11/63 , H01S5/32341
摘要： A highly pure hexagonal boron nitride single crystal not influenced by impurities and capable of high-luminance short wave ultraviolet light emission reflecting inherent characteristics is provided; a high-luminance ultraviolet light emitting element is provided by using the above single crystal; and utilizing the above element, a simple compact low-cost long-lived far ultraviolet solid-state laser and far ultraviolet solid-state light emitting apparatus are provided. A highly pure hexagonal boron nitride single crystal having a single light emission peak in the far ultraviolet region of up to a wavelength of 235 nm is produced by melting said boron nitride crystal as raw material in the presence of a highly pure solvent under high-temperature and high-pressure, followed by crystallization. A light emitting element or a light emitting layer comprised of the obtained crystal is excited with electron beams, and the thus generated far ultraviolet light resonated or without resonation is taken out.
摘要翻译：提供了不受杂质影响并具有反映固有特性的高亮度短波紫外光发射的高纯度六方氮化硼单晶。通过使用上述单晶提供高亮度紫外线发光元件; 并利用上述元件，提供简单的紧凑型低成本长寿命的远紫外固态激光器和远紫外固态发光装置。在高达235nm的远紫外区域中具有单一发光峰的高纯度六方氮化硼单晶通过在高温下在高纯度溶剂的存在下熔化所述氮化硼晶体作为原料来制造和高压，然后结晶。由所得晶体组成的发光元件或发光层被电子束激发，从而产生远紫外光共振或不产生共振。

7. 发明授权

US07811909B2 Production of a hexagonal boron nitride crystal body capable of emitting out ultraviolet radiation 有权
标题翻译：生产能够发出紫外线辐射的六方晶系氮化硼晶体
公开(公告)号：US07811909B2
公开(公告)日：2010-10-12
申请号：US12451641
申请日：2008-05-22
申请人： Takashi Taniguchi , Kenji Watanabe , Yoichi Kubota , Osamu Tsuda
发明人： Takashi Taniguchi , Kenji Watanabe , Yoichi Kubota , Osamu Tsuda
IPC分类号： H01L21/00 , H01L21/208
CPC分类号： C30B9/10 , C01B21/064 , C01P2004/02 , C01P2004/03 , C30B19/02 , C30B29/38
摘要： The invention has for its object to provide a process of synthesizing high-purity hBN crystal bodies on a robust substrate even under normal pressure.The inventive process of producing hexagonal boron nitride crystal bodies is characterized by comprising a preparation step of preparing a mixture of a boron nitride raw material and a metal solvent comprising a transition metal, a contact step of bringing a sapphire substrate in contact with the mixture, a heating step of heating the mixture, and a recrystallization step of recrystallizing at normal pressure a melt obtained in the heating step. It is also characterized by using as the metal solvent a transition metal selected from the group consisting of Fe, Ni, Co, and a combination thereof, and at least one substance selected from the group consisting of Cr, TiN and V without recourse to any sapphire substrate.
摘要翻译：本发明的目的是提供即使在常压下也能在坚固的基底上合成高纯度hBN晶体的方法。制造六方氮化硼晶体的本发明方法的特征在于包括制备氮化硼原料和包含过渡金属的金属溶剂的混合物的制备步骤，使蓝宝石衬底与该混合物接触的接触步骤，加热混合物的加热步骤和在常压下重结晶在加热步骤中获得的熔体的再结晶步骤。还特征在于使用选自Fe，Ni，Co及其组合的过渡金属作为金属溶剂，以及选自Cr，TiN和V中的至少一种物质，而不用任何蓝宝石衬底。

8. 发明申请

US20100120187A1 PRODUCTION OF A HEXAGONAL BORON NITRIDE CRYSTAL BODY CAPABLE OF EMITTING OUT ULTRAVIOLET RADIATION 有权
标题翻译：生产能够发射超紫外线辐射的十六烷基硼酸盐晶体
公开(公告)号：US20100120187A1
公开(公告)日：2010-05-13
申请号：US12451641
申请日：2008-05-22
申请人： Takashi Taniguchi , Kenji Watanabe , Yoichi Kubota , Osamu Tsuda
发明人： Takashi Taniguchi , Kenji Watanabe , Yoichi Kubota , Osamu Tsuda
IPC分类号： H01L21/20
CPC分类号： C30B9/10 , C01B21/064 , C01P2004/02 , C01P2004/03 , C30B19/02 , C30B29/38
摘要： The invention has for its object to provide a process of synthesizing high-purity hBN crystal bodies on a robust substrate even under normal pressure.The inventive process of producing hexagonal boron nitride crystal bodies is characterized by comprising a preparation step of preparing a mixture of a boron nitride raw material and a metal solvent comprising a transition metal, a contact step of bringing a sapphire substrate in contact with the mixture, a heating step of heating the mixture, and a recrystallization step of recrystallizing at normal pressure a melt obtained in the heating step. It is also characterized by using as the metal solvent a transition metal selected from the group consisting of Fe, Ni, Co, and a combination thereof, and at least one substance selected from the group consisting of Cr, TiN and V without recourse to any sapphire substrate.
摘要翻译：本发明的目的是提供即使在常压下也能在坚固的基底上合成高纯度hBN晶体的方法。制造六方氮化硼晶体的本发明方法的特征在于包括制备氮化硼原料和包含过渡金属的金属溶剂的混合物的制备步骤，使蓝宝石衬底与该混合物接触的接触步骤，加热混合物的加热步骤和在常压下重结晶在加热步骤中获得的熔体的再结晶步骤。还特征在于使用选自Fe，Ni，Co及其组合的过渡金属作为金属溶剂，以及选自Cr，TiN和V中的至少一种物质，而不用任何蓝宝石衬底。

9. 植物专利

USPP30148P2 Hydrangea plant named ‘Little Ema’ 有权
公开(公告)号：USPP30148P2
公开(公告)日：2019-01-29
申请号：US15732613
申请日：2017-12-01
申请人： Kenji Watanabe
发明人： Kenji Watanabe
IPC分类号： A01H5/02
摘要： A new and distinct cultivar of Hydrangea plant named ‘Little Ema’, characterized by its white-colored inflorescences, medium green-colored foliage, and moderately vigorous, compact, upright-mounded growth habit, is disclosed.

10. 发明授权

US08849178B2 Sheet detecting apparatus and image forming apparatus 有权
标题翻译：纸张检测装置和图像形成装置
公开(公告)号：US08849178B2
公开(公告)日：2014-09-30
申请号：US13408129
申请日：2012-02-29
申请人： Akira Yoshimura , Kenji Watanabe , Minoru Kawanishi , Motohiro Furusawa , Yohei Suzuki
发明人： Akira Yoshimura , Kenji Watanabe , Minoru Kawanishi , Motohiro Furusawa , Yohei Suzuki
IPC分类号： G03G15/00
CPC分类号： G03G15/6558 , G03G15/235 , G03G15/6561 , G03G2215/00586 , G03G2215/00616 , G03G2215/00721
摘要： A sheet detecting apparatus including: a sheet detecting member having a plurality of abutment surfaces in a peripheral direction thereof, the sheet detecting member being rotated by a conveyed sheet abutting against one of the plurality of abutment surfaces; a detection portion which operates in association with the sheet detecting member; a sensor which generates a signal based on a position of the detection portion; and an urging portion which generates an urging force for positioning the one of the plurality of abutment surfaces of the sheet detecting member in a waiting position in which the leading edge of a sheet conveyed by a conveying portion abuts against the one of the plurality of abutment surfaces, and thereafter the urging portion switching the urging force to an urging force for positioning, in the waiting position, another one of the plurality of abutment surfaces against which a succeeding sheet abuts.
摘要翻译：一种片材检测装置，包括：片材检测部件，其周向具有多个邻接表面，片材检测部件被抵靠在多个邻接表面中的一个的传送片材旋转; 检测部，其与片材检测部件相关联地操作; 传感器，其基于所述检测部的位置生成信号; 以及施力部，其产生用于将片材检测部件的多个抵接面中的一个定位的等待位置，其中由输送部件输送的片材的前缘抵靠在多个抵接部并且此后，所述推动部分将所述推动力切换到用于在所述等待位置中定位另一个所述多个邻接表面中的另一个抵靠表面的推动力，所述多个邻接表面中的另一个邻接表面邻接。

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