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    • 6. 发明申请
    • SYNCHRONOUS MOTOR AND CONTROL METHOD OF SYNCHRONOUS MOTOR
    • 同步电动机同步电机及其控制方法
    • US20090256505A1
    • 2009-10-15
    • US12420154
    • 2009-04-08
    • Daisuke MAEDAKenji SAKURAIHiroyuki HASEGAWAHidefumi SHIRAHAMAMitsuhiro MISHIMA
    • Daisuke MAEDAKenji SAKURAIHiroyuki HASEGAWAHidefumi SHIRAHAMAMitsuhiro MISHIMA
    • H02P6/16H02P6/08
    • H02P6/08H02P6/16
    • A synchronous motor including therein a three-phase inverter and position sensors, having a unit for calculating a digital input current value from the analog output of an input current detection circuit that detects the input current flowing into the DC input terminal of the three-phase inverter, and a digital feedback speed control unit for adjusting the amplitudes and frequency of the AC voltages outputted from the three-phase inverter in such a manner that the motor speed calculated by a motor speed calculation unit 41 on the basis of the outputs of the position sensors approaches a speed command value received by a communication reception unit from outside the synchronous motor. The synchronous motor further includes therein a communication transmission unit for transmitting the input current value and the motor speed to outside the synchronous motor.
    • 一种同步电动机,包括三相逆变器和位置传感器,具有用于从输入电流检测电路的模拟输出计算数字输入电流值的单元,该输入电流检测电路检测流入三相的DC输入端的输入电流 逆变器和数字反馈速度控制单元,用于调整从三相逆变器输出的AC电压的幅度和频率,使得由电动机速度计算单元41基于电动机速度计算单元41的输出计算的电动机速度 位置传感器从同步电动机外部接近由通信接收单元接收的速度指令值。 同步电动机还包括用于将输入电流值和电动机速度传送到同步电动机外部的通信传输单元。
    • 7. 发明申请
    • METHOD FOR PRODUCING SEMICONDUCTOR OPTICAL DEVICE
    • 生产半导体光学器件的方法
    • US20130012001A1
    • 2013-01-10
    • US13530154
    • 2012-06-22
    • Kenji SAKURAIHideki YAGIHiroyuki YOSHINAGA
    • Kenji SAKURAIHideki YAGIHiroyuki YOSHINAGA
    • H01L21/20
    • H01L33/0075H01S5/2275
    • A method for producing a semiconductor optical device includes the steps of growing a semiconductor stacked layer including an etch stop layer and a plurality of semiconductor layers on a major surface of a substrate; forming a mask layer on a top surface of the semiconductor stacked layer so that a tip portion of each of protrusions that protrude from the top surface among protrusions generated in the step of growing the semiconductor stacked layer is exposed; etching the protrusion by wet etching using the mask layer; after etching the protrusion by wet etching, removing the protrusion by dry etching; and removing the mask layer from the top surface, after removing the protrusion by dry etching.
    • 一种制造半导体光学器件的方法包括以下步骤:在衬底的主表面上生长包括蚀刻停止层和多个半导体层的半导体堆叠层; 在所述半导体层叠层的顶面上形成掩模层,使得在所述半导体堆叠层的生长步骤中产生的突起中从所述顶面突出的突起的前端部露出; 通过使用掩模层的湿蚀刻来蚀刻突起; 在通过湿蚀刻蚀刻突起之后,通过干蚀刻去除突起; 并且通过干蚀刻去除突起之后从顶表面去除掩模层。