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1. 发明授权

US5880900A Error recovery method and disk drive apparatus to superimpose a vibration signal with one-half frequency onto a driving signal to a magnetoresistive head 失效
标题翻译：误差恢复方法和磁盘驱动装置将具有一半频率的振动信号叠加到驱动信号到磁阻头
公开(公告)号：US5880900A
公开(公告)日：1999-03-09
申请号：US752920
申请日：1996-11-20
申请人： Kenji Okada , Koichi Arai , Hisashi Kakuta , Hiroaki Suzuki , Masakazu Sasaki , Akira Kibashi , Tatsuya Endo
发明人： Kenji Okada , Koichi Arai , Hisashi Kakuta , Hiroaki Suzuki , Masakazu Sasaki , Akira Kibashi , Tatsuya Endo
IPC分类号： G11B21/02 , G11B5/00 , G11B5/012 , G11B5/02 , G11B20/18 , G11B20/24 , G11B27/36 , G11B33/10
CPC分类号： G11B27/36 , G11B20/1816 , G11B20/24 , G11B2005/001 , G11B33/10 , G11B5/012
摘要： A disk drive apparatus and a method for executing an error recovery process for an error caused by thermal asperity is set forth by positioning a disk read/write head in the vicinity of a thermal asperity and then by vibrating the head so that the head hits the foreign matter or protrusion on the surface of the disk causing the thermal asperity. Vibrations in the longitudinal direction are generated in a head by supplying a vibration signal to VCM. The vibration signal is superimposed on a head driving signal. During the vibration process, the head is positioned on a track shifted from a thermal asperity causing track by several tracks in order to hit the thermal asperity by an edge of a head.
摘要翻译：通过将盘读/写头定位在热凹凸附近，然后通过使头部振动以使头部撞击到头部，来提供用于执行由热凹凸引起的误差的错误恢复处理的盘驱动装置和方法在盘表面上的异物或突起导致热不均匀。通过向VCM提供振动信号，在头部产生纵向振动。振动信号叠加在磁头驱动信号上。在振动过程中，头部位于从热凹凸移动的轨道上，导致轨迹通过几个轨道，以便通过头部边缘击打热不均匀性。

2. 发明授权

US06456451B1 Method and apparatus for disk drive seek control 失效
公开(公告)号：US06456451B1
公开(公告)日：2002-09-24
申请号：US09220419
申请日：1998-12-24
申请人： Hideo Asano , Kenji Okada , Tetsuo Ueda , Koichi Arai , Hideki Ohzeki
发明人： Hideo Asano , Kenji Okada , Tetsuo Ueda , Koichi Arai , Hideki Ohzeki
IPC分类号： G11B5596
CPC分类号： G11B5/5547
摘要： A disk drive seek control system device to reduce track pitch. When data is recorded, an offset value is added to the position of a read head element along the width of a track corresponding to an offset &Dgr;w between the read head element and a write head element. The value of the offset depends on the yaw angle &thgr; of the head. When data is read, the position of the read head element is chosen to be either the position of the write head element during write operations, or the midpoint between the position of the write head element and the read head element during write operations, or the center of a track.

3. 发明授权

US06597530B2 Method and apparatus for disk drive seek control 失效
公开(公告)号：US06597530B2
公开(公告)日：2003-07-22
申请号：US09935272
申请日：2001-08-22
申请人： Hideo Asano , Kenji Okada , Tetsuo Ueda , Koichi Arai , Hideki Ohzeki
发明人： Hideo Asano , Kenji Okada , Tetsuo Ueda , Koichi Arai , Hideki Ohzeki
IPC分类号： G11B5596
CPC分类号： G11B5/5547
摘要： A disk drive seek control system device to reduce track pitch. When data is recorded, an offset value is added to the position of a read head element along the width of a track corresponding to an offset &Dgr;w between the read head element and a write head element. The value of the offset depends on the yaw angle &thgr; of the head. When data is read, the position of the read head element is chosen to be either the position of the write head element during write operations, or the midpoint between the position of the write head element and the read head element during write operations, or the center of a track.

4. 发明授权

US08579557B2 Drill 有权
标题翻译：钻头
公开(公告)号：US08579557B2
公开(公告)日：2013-11-12
申请号：US13816895
申请日：2012-02-06
申请人： Koichi Arai , Giichi Arai , Katsuyo Kimura
发明人： Koichi Arai , Giichi Arai , Katsuyo Kimura
IPC分类号： B23B51/02
CPC分类号： B23B51/02 , B23B2251/04 , B23B2251/085 , B23B2251/14 , B23B2251/18 , B24B3/32
摘要： [Problem] To provide a drill which enables a great reduction in cutting resistance and easy performance of a drilling operation by human power using a hand drill, a drilling machine, or the like.[Solution] A drill has two cutting edges formed symmetrically with respect to a rotation axis, and is subjected to thinning at the tip thereof. The cutting edge is configured from a thinned cutting edge (1) which extends in a shape including a curved line from a chisel edge to the outer peripheral side of the drill, and a main cutting edge (2) which extends from the end of the thinned cutting edge to the outer peripheral end of the drill when viewed from the tip side of the drill, and a thinned surface formed by the thinned cutting edge is formed into an approximately parabolic shape inclined in a drill axis direction when viewed from the front side of the drill.
摘要翻译： [问题]提供一种使用手钻，钻孔机械等能够大幅度降低切削阻力并且容易地进行人力钻孔操作的钻头的钻头。 [解决方案]钻具具有相对于旋转轴对称形成的两个切削刃，并且在其尖端处经受变薄。所述切削刃由从所述钻头的凿边缘到所述外周侧的弯曲线形状的延长的切削刃（1）构成，以及从所述切削刃的末端延伸的主切削刃（2）当从钻头的尖端侧观察时，将切削刃变细到钻头的外周端，并且由前述变薄的切削刃形成的由薄板切削刃形成的变薄的表面形成为从钻头轴线方向倾斜的大致抛物线形状的钻头。

5. 发明申请

US20120193702A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120193702A1
公开(公告)日：2012-08-02
申请号：US13361010
申请日：2012-01-30
申请人： Nobuo Machida , Koichi Arai
发明人： Nobuo Machida , Koichi Arai
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7802 , H01L29/045 , H01L29/0657 , H01L29/0696 , H01L29/1608 , H01L29/66068
摘要： In a SiC-based MISFET and a manufacturing process thereof, after the introduction of an impurity, extremely-high-temperature activation annealing is required. Accordingly, it is difficult to frequently use a self-alignment process as performed in a silicon-based MISFET manufacturing process. This results in the problem that, to control the characteristics of a device, a high-accuracy alignment technique is indispensable. In accordance with the present invention, in a semiconductor device such as a SiC-based vertical power MISFET using a silicon-carbide-based semiconductor substrate and a manufacturing method thereof, a channel region, a source region, and a gate structure are formed in mutually self-aligned relation.
摘要翻译：在基于SiC的MISFET及其制造方法中，在引入杂质之后，需要极高温的活化退火。因此，难以频繁地使用在硅系MISFET制造工序中进行的自对准工序。这导致了为了控制装置的特性，高精度对准技术是必不可少的问题。根据本发明，在诸如使用碳化硅基半导体衬底的基于SiC的垂直功率MISFET等半导体器件及其制造方法中，形成沟道区，源极区和栅极结构相互自我约束的关系

6. 发明申请

US20090145841A1 Perforated Member 审中-公开
标题翻译：穿孔会员
公开(公告)号：US20090145841A1
公开(公告)日：2009-06-11
申请号：US12083113
申请日：2006-08-17
申请人： Koichi Arai
发明人： Koichi Arai
IPC分类号： B01D39/14 , B01D35/30
CPC分类号： B01D46/2403 , B01D29/012 , B01D29/035 , B01D29/111 , B01D29/33 , B01D46/10 , B01D46/103 , B01D2201/02 , B01D2275/201 , B01D2275/205 , B01D2275/206 , B01D2275/30 , B01D2275/406
摘要： The present invention provides a perforated component having the excellent hygienic property and washable structure suitable for a filter element and a jet nozzle used particularly in food processing by employing the single material such as metal, ceramic or the like. The perforated component attains the following advantages: steps for manufacturing the perforated component can be decreases; positions where foreign particles accumulate are diminished; additional reinforcements are not required; since no welding steps are included, strains, cracks and the like hardly caused by manufacturing steps. As a result the perforated component of high precision and high quality is obtained. The perforated component is formed in the following manner. Grooves 1 are formed at desired positions in a workpiece W made out of a single material. A plurality of passage holes 2 are perforated in the grooves 1. and except the grooves 2, remaining portions functioning as strength sustaining portions 3 in the workpiece are formed as a monolithic structure
摘要翻译：本发明提供了一种具有优异的卫生性能和可洗涤结构的穿孔部件，其适用于通过采用单一材料如金属，陶瓷等而特别用于食品加工的过滤元件和喷嘴。穿孔部件具有以下优点：可以减少用于制造穿孔部件的步骤; 外来颗粒积聚的位置减少; 不需要额外的增援; 由于不包括焊接步骤，不容易由制造步骤引起的应变，裂纹等。结果，获得了高精度和高质量的穿孔部件。穿孔部件以如下方式形成。沟槽1形成在由单一材料制成的工件W中的期望位置处。多个通道孔2在沟槽1中穿孔，除了沟槽2之外，在工件中用作强度维持部分3的其余部分形成为整体结构

7. 发明授权

US06506143B1 Apparatus for finishing inside diameter of work 失效
标题翻译：用于完成工作内径的装置
公开(公告)号：US06506143B1
公开(公告)日：2003-01-14
申请号：US09685861
申请日：2000-10-05
申请人： Kaname Goto , Yuzo Abe , Koichi Arai , Tsugio Ueno , Yasuo Kondo
发明人： Kaname Goto , Yuzo Abe , Koichi Arai , Tsugio Ueno , Yasuo Kondo
IPC分类号： B23Q3157
CPC分类号： B23Q17/09 , B23B41/12 , B23Q3/15573 , B23Q11/0042 , B23Q17/005 , B23Q17/20 , H01F17/0013 , Y10S408/707 , Y10T29/49288 , Y10T279/1091 , Y10T279/1973 , Y10T279/29 , Y10T279/33 , Y10T408/05 , Y10T409/303864 , Y10T409/304032 , Y10T409/304088 , Y10T409/3056 , Y10T409/306104 , Y10T409/306832 , Y10T409/307224 , Y10T409/308008 , Y10T409/30896 , Y10T409/309016 , Y10T483/136 , Y10T483/14 , Y10T483/15 , Y10T483/179 , Y10T483/1882
摘要： In a finishing apparatus, a plurality of works are retained at distances from each other in a direction of an X-axis. A single spindle is disposed on a table movable in the direction of the X-axis, the spindle has an axis parallel to an axis of each of bores to be finished, and is capable of being advanced and retracted axially. A measuring device is provided that measures an inside diameter of each finished bore and which is advanced and retracted independently from the spindle in a direction along the axis of each finished bore. A combination tool is mounted at a tip end of the spindle and finishes an inner surface of any of the bores to be finished, even if the position of insertion of the combination tool into each of the bores is changed.
摘要翻译：在整理装置中，多个作品在X轴的方向上保持彼此间隔开。单个主轴设置在可沿着X轴方向移动的工作台上，该主轴具有平行于每个待完成的孔的轴线的轴线，并且能够轴向前进和缩回。提供一种测量装置，其测量每个成品孔的内径，并且沿着每个成品孔的轴线的方向独立于主轴前进和后退。组合工具安装在主轴的末端，并且即使将组合工具插入每个孔中的位置改变，也可以完成任何要完成的孔的内表面。

8. 发明授权

US5047148A Retained wire filter element 失效
标题翻译：保留电线滤芯
公开(公告)号：US5047148A
公开(公告)日：1991-09-10
申请号：US513638
申请日：1990-04-24
申请人： Koichi Arai
发明人： Koichi Arai
IPC分类号： B01D29/05
CPC分类号： B01D29/05 , Y10S29/077 , Y10T29/49604
摘要： A filter element for filter systems, which comprises a plurality of plate members having a number of apertures therethrough and cutout grooves formed in the surface thereof, a plurality of wire members each having a retaining leg portion, which is inserted into one of the grooves of the plate member, whereby the top surfaces of the wire members are flashed in a definite plane for forming a plurality of slits for filtering a liquid.
摘要翻译：一种用于过滤器系统的过滤器元件，其包括多个板构件，所述多个板构件具有穿过其中的多个孔和形成在其表面中的切口槽，多个线构件，每个线构件具有保持脚部，所述多个线构件被插入到板构件，由此，线构件的顶表面在确定的平面中闪光，以形成用于过滤液体的多个狭缝。

9. 发明授权

US4569763A Wire locking structure for a filter device 失效
公开(公告)号：US4569763A
公开(公告)日：1986-02-11
申请号：US638659
申请日：1984-08-07
申请人： Koichi Arai
发明人： Koichi Arai
IPC分类号： B01D29/15 , E21B43/08 , E03B3/18
CPC分类号： E21B43/088 , B01D29/15 , Y10T29/49874 , Y10T403/583
摘要： This invention relates to a wire locking structure for a filter device, in which an outer circumference of a cylinder body is provided with a screw thread portion. The screw thread portion is wrapped by a wire of isosceles triangle in section. An end of the wire is drawn into a recess and firmly supported in a U-shape by an insert member to be inserted in the recess, thereby a conventional welding means has been removed.

10. 发明授权

US08524552B2 Normally-off power JFET and manufacturing method thereof 有权
标题翻译：常关断电源JFET及其制造方法
公开(公告)号：US08524552B2
公开(公告)日：2013-09-03
申请号：US13363256
申请日：2012-01-31
申请人： Koichi Arai , Yasuaki Kagotoshi , Nobuo Machida , Natsuki Yokoyama , Haruka Shimizu
发明人： Koichi Arai , Yasuaki Kagotoshi , Nobuo Machida , Natsuki Yokoyama , Haruka Shimizu
IPC分类号： H01L21/337
CPC分类号： H01L29/36 , H01L29/045 , H01L29/1066 , H01L29/1608 , H01L29/42316 , H01L29/66909 , H01L29/8083
摘要： In general, in a semiconductor active element such as a normally-off JFET based on SiC in which an impurity diffusion speed is significantly lower than in silicon, gate regions are formed through ion implantation into the side walls of trenches formed in source regions. However, to ensure the performance of the JFET, it is necessary to control the area between the gate regions thereof with high precision. Besides, there is such a problem that, since a heavily doped PN junction is formed by forming the gate regions in the source regions, an increase in junction current cannot be avoided. The present invention provides a normally-off power JFET and a manufacturing method thereof and forms the gate regions according to a multi-epitaxial method which repeats a process including epitaxial growth, ion implantation, and activation annealing a plurality of times.
摘要翻译：通常，在诸如基于SiC的正常关断JFET的半导体有源元件中，其中杂质扩散速度显着低于硅中的杂质扩散速度，通过离子注入形成在源区中形成的沟槽的侧壁中形成栅极区。然而，为了确保JFET的性能，需要高精度地控制栅极区域之间的面积。此外，存在这样的问题，由于通过在源极区域中形成栅极区域而形成重掺杂的PN结，所以不能避免结电流的增加。本发明提供一种常闭功率JFET及其制造方法，根据多次外延法形成栅极区域，该方法重复包括外延生长，离子注入和激活退火多次的工艺。

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