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    • 10. 发明授权
    • Ion implanter, ion implantation method and program
    • 离子注入机,离子注入法和程序
    • US08455837B2
    • 2013-06-04
    • US12935781
    • 2009-03-24
    • Yasuyuki Tsuji
    • Yasuyuki Tsuji
    • G05B13/04G05B23/02H01J1/50H01J37/317
    • H01J37/12C23C14/48G21K1/093H01J37/3171H01J2237/0453H01J2237/30433
    • The ion implanter includes lens elements that arrange unit lens elements along a direction of a beam width of a ribbon ion beam and regulate a magnetic field or electric field to be created by each unit lens element in order to regulate a current density distribution of the ion beam, and a controlling portion that sets the intensity of the magnetic field or electric field to be created by the unit lens element to be regulated by the lens elements in accordance with the measured current density distribution. The regulation intensity of the magnetic field or electric field to be created by the unit lens element that corresponds to a position to be regulated in the unit lens elements of the lens elements is determined from the measured current density distribution and a value obtained by multiplying the determined regulation intensity by a fixed ratio is determined as the regulation intensity of the magnetic field or electric field for the magnetic field or electric field to be created by a unit lens element adjacent to the unit lens element.
    • 离子注入机包括透镜元件,其沿着带状离子束的波束宽度的方向布置单位透镜元件,并调节由每个单位透镜元件产生的磁场或电场,以调节离子的电流密度分布 光束和控制部分,其根据测量的电流密度分布来设定要由透镜元件调节的单位透镜元件产生的磁场强度或电场强度。 由透镜元件的单位透镜元件对应于要调节的位置的单位透镜元件产生的磁场或电场的调节强度根据测得的电流密度分布和乘以 确定的固定比率的调节强度被确定为由与单位透镜元件相邻的单位透镜元件产生的磁场或电场的磁场或电场的调节强度。