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1. 发明授权

US08189631B2 External resonator-type wavelength tunable laser device 有权
标题翻译：外部谐振器型波长可调激光器件
公开(公告)号：US08189631B2
公开(公告)日：2012-05-29
申请号：US12664294
申请日：2008-05-22
申请人： Shinya Sudo , Kenji Sato , Koji Kudo , Kenji Mizutani , Jan De Merlier
发明人： Shinya Sudo , Kenji Sato , Koji Kudo , Kenji Mizutani , Jan De Merlier
IPC分类号： H01S3/13
CPC分类号： H01S5/141 , H01S5/02248 , H01S5/028 , H01S5/0287 , H01S5/1039
摘要： The present invention provides an external resonator-type wavelength tunable laser device that can properly fulfill a wavelength tuning function even with the use of a planar wavelength tunable reflector involving a considerable level of residual reflection. The external resonator-type wavelength tunable laser device includes a planar reflection structure enabling a reflection spectral peak wavelength to be varied and a semiconductor element as a semiconductor gain medium. The semiconductor gain medium is composed of a multiple quantum well in which product Γ·L of optical confinement constant Γ and semiconductor gain medium length L (μm) of a gain layer is at least 25 μm and at most 40 μm and in which gain peak wavelength λ0 (nm) observed during carrier injected with a maximum modal gain equal to an internal loss of the semiconductor gain medium is larger than −3·ΔR/2+(λc+35) and smaller than (−(Γ·L)/7+8)·ΔR+(−(Γ·L)+λc+45). Here, ΔR (dB) denotes a reflectance difference, and λc (nm) denotes a wavelength at a center of an operating wavelength range of the wavelength tunable laser device.
摘要翻译：本发明提供一种外部谐振器型波长可调激光器件，其即使使用涉及相当程度的残余反射的平面波长可调谐反射器也能适当地实现波长调谐功能。外部谐振器型波长可调激光器件包括能够使反射光谱峰值波长变化的平面反射结构和半导体元件作为半导体增益介质。半导体增益介质由多重量子阱组成，其中光学限制常数Ggr; 并且增益层的半导体增益介质长度L（μm）为至少25μm且至多40μm，并且其中以最大模态增益注入的载流子注入的增益峰值波长λ0（nm）等于半导体的内部损耗增益介质大于-3·＆Dgr; R / 2 +（λc+ 35）且小于（ - （＆Ggr;·L）/ 7 + 8）·＆Dgr; R +（ - （＆Ggr;·L）+λc+ 45）。这里，＆Dgr; R（dB）表示反射率差，λc（nm）表示波长可调激光器件的工作波长范围的中心处的波长。

2. 发明申请

US20100246618A1 EXTERNAL RESONATOR-TYPE WAVELENGTH TUNABLE LASER DEVICE 有权
标题翻译：外部谐振器型波长激光器激光器件
公开(公告)号：US20100246618A1
公开(公告)日：2010-09-30
申请号：US12664294
申请日：2008-05-22
申请人： Shinya Sudo , Kenji Sato , Koji Kudo , Kenji Mizutani , Jan De Merlier
发明人： Shinya Sudo , Kenji Sato , Koji Kudo , Kenji Mizutani , Jan De Merlier
IPC分类号： H01S3/13
CPC分类号： H01S5/141 , H01S5/02248 , H01S5/028 , H01S5/0287 , H01S5/1039
摘要： The present invention provides an external resonator-type wavelength tunable laser device that can properly fulfill a wavelength tuning function even with the use of a planar wavelength tunable reflector involving a considerable level of residual reflection. The external resonator-type wavelength tunable laser device includes a planar reflection structure enabling a reflection spectral peak wavelength to be varied and a semiconductor element as a semiconductor gain medium. The semiconductor gain medium is composed of a multiple quantum well in which product Γ·L of optical confinement constant Γ and semiconductor gain medium length L (μm) of a gain layer is at least 25 μm and at most 40 μm and in which gain peak wavelength λ0 (nm) observed during carrier injected with a maximum modal gain equal to an internal loss of the semiconductor gain medium is larger than −3·ΔR/2+(λc+35) and smaller than (−(Γ·L)/7+8)·ΔR+(−(Γ·L)+λc+45). Here, ΔR (dB) denotes a reflectance difference, and he (nm) denotes a wavelength at a center of an operating wavelength range of the wavelength tunable laser device.
摘要翻译：本发明提供一种外部谐振器型波长可调激光器件，其即使使用涉及相当程度的残余反射的平面波长可调谐反射器也能适当地实现波长调谐功能。外部谐振器型波长可调激光器件包括能够使反射光谱峰值波长变化的平面反射结构和半导体元件作为半导体增益介质。半导体增益介质由多重量子阱组成，其中光学限制常数Ggr; 并且增益层的半导体增益介质长度L（μm）为至少25μm且至多40μm，并且其中以最大模态增益注入的载流子注入的增益峰值波长λ0（nm）等于半导体的内部损耗增益介质大于-3·＆Dgr; R / 2 +（λc+ 35）且小于（ - （＆Ggr;·L）/ 7 + 8）·＆Dgr; R +（ - （＆Ggr;·L）+λc+ 45）。这里，＆Dgr; R（dB）表示反射率差，he（nm）表示波长可调激光器件的工作波长范围的中心处的波长。

3. 发明授权

US07656911B2 External resonator type wavelength-variable laser 失效
标题翻译：外部谐振器型波长可变激光器
公开(公告)号：US07656911B2
公开(公告)日：2010-02-02
申请号：US11632213
申请日：2005-05-25
申请人： Kenji Mizutani , Koji Kudo , Kenji Sato , Jan De Merlier
发明人： Kenji Mizutani , Koji Kudo , Kenji Sato , Jan De Merlier
IPC分类号： H01S5/10
CPC分类号： H01S5/141 , H01S3/1062 , H01S5/005 , H01S5/02216 , H01S5/02248 , H01S5/02415 , H01S5/02438 , H01S5/02446 , H01S5/02492 , H01S5/0625 , H01S5/1039
摘要： To facilitate phase adjustment in an external resonator type wavelength-variable laser. An external resonator type wavelength-variable laser (50) includes a semiconductor light amplifier (1), a wavelength selection filter (3) having periodic frequency characteristics, an external resonator (6), and a wavelength-variable filter (4). Δf is divided into one or more regions. The following conditions are satisfied for one Δfi region: mj=(j×Δffs)/ΔfFP where Δffs: a period of the wavelength selection filter, ΔfFP: a Fabry-Perot mode interval dependent on a length of the external resonator, j: an integer not smaller than 1 and not larger than (Δfi/Δffs). A coefficient Mj is an integer obtained by rounding off the first digit after decimal point of the coefficient mj. A coefficient Ni,j is an integer obtained by discarding the first digit after decimal point of Δfi/(j×Δffs). In this regard, a relation of (|Ni,j×2π(Mj−mj)|
摘要翻译：为了促进外部谐振器型波长可变激光器的相位调整。外部谐振器型波长可变激光器（50）包括半导体光放大器（1），具有周期性频率特性的波长选择滤波器（3），外部谐振器（6）和波长可变滤波器（4）。 Deltaf分为一个或多个区域。对于一个Deltafi区域，满足以下条件：mj =（jxDeltaffs）/ DeltafFP其中Deltaffs：波长选择滤波器的周期，DeltafFP：取决于外部谐振器长度的法布里 - 珀罗模式间隔，j：不整数小于1并且不大于（Deltafi / Deltaffs）。系数Mj是通过舍入系数mj的小数点后的第一位数而获得的整数。系数Ni，j是通过丢弃Deltafi /（jxDeltaffs）小数点后的第一位数获得的整数。在这方面，对于一个j，满足（| Ni，jx2pi（Mj-mj）|

4. 发明申请

US20080025349A1 External Resonator Type Wavelength-Variable Laser 失效
标题翻译：外部谐振器类型波长可变激光器
公开(公告)号：US20080025349A1
公开(公告)日：2008-01-31
申请号：US11632213
申请日：2005-05-25
申请人： Kenji Mizutani , Koji Kudo , Kenji Sato , Jan De Merlier
发明人： Kenji Mizutani , Koji Kudo , Kenji Sato , Jan De Merlier
IPC分类号： H01S5/14
CPC分类号： H01S5/141 , H01S3/1062 , H01S5/005 , H01S5/02216 , H01S5/02248 , H01S5/02415 , H01S5/02438 , H01S5/02446 , H01S5/02492 , H01S5/0625 , H01S5/1039
摘要： To facilitate phase adjustment in an external resonator type wavelength-variable laser. An external resonator type wavelength-variable laser (50) includes a semiconductor light amplifier (1), a wavelength selection filter (3) having periodic frequency characteristics, an external resonator (6), and a wavelength-variable filter (4). Δf is divided into one or more regions. The following conditions are satisfied for one Δfi region: mj=(j×Δffs)/ΔFP where Δffs: a period of the wavelength selection filter, ΔfFP: a Fabry-Perot mode interval dependent on a length of the external resonator, j: an integer not smaller than 1 and not larger than (Δfi/Δffs). A coefficient Mj is an integer obtained by rounding off the first digit after decimal point of the coefficient mj. A coefficient Ni,j is an integer obtained by discarding the first digit after decimal point of Δfi/(jΔffs). In this regard, a relation of (|Ni,j×2π(Mj−mj)|
摘要翻译：为了促进外部谐振器型波长可变激光器的相位调整。外部谐振器型波长可变激光器（50）包括半导体光放大器（1），具有周期性频率特性的波长选择滤波器（3），外部谐振器（6）和波长可变滤波器（4）。 Deltaf分为一个或多个区域。对于一个Deltaf 区域满足以下条件：m（j）=（jxDeltaf＆lt; fs）/ Delta＆lt;＆lt;＆lt; Deltaf ：波长选择滤波器的周期，DeltafFP：取决于外部谐振器的长度的法布里 - 珀罗模式间隔，j：不小于1且不大于（Deltaf < SUB>我 / Deltaf _{fs ）。系数M N是通过舍入系数m≠j的小数点后的第一数位而获得的整数。系数N i，j是通过丢弃Deltaf i（jDeltaf＆lt; fs＆gt;）的小数点之后的第一位获得的整数。在这方面，满足（| N 1，j 2 x 2 pi（M 1 -j j 2）|π2）的关系一个j。}

5. 发明申请

US20090268762A1 Optical intergrated device 审中-公开
标题翻译：光学集成装置
公开(公告)号：US20090268762A1
公开(公告)日：2009-10-29
申请号：US11921763
申请日：2005-06-08
申请人： Jan De Merlier , Kenji Sato , Kenji Mizutani , Koii Kudo
发明人： Jan De Merlier , Kenji Sato , Kenji Mizutani , Koii Kudo
IPC分类号： H01S3/10 , H01S3/08 , H01S5/00
CPC分类号： H01S5/141 , G02B6/12004 , G02F1/2257 , G02F2001/217 , H01S5/02248 , H01S5/02284 , H01S5/026 , H01S5/0261 , H01S5/0265 , H01S5/101 , H01S5/1085
摘要： An object of the invention is to provide an optical integrated device which enables to supply a wide range of variable wavelength and to reduce the coupling loss. The optical integrated circuit chip (10) includes a semiconductor optical amplifier section (20), a phase control section (18), a partially reflecting mirror (16) having optical power splitter function and a Mach-Zehnder optical modulator (22), wherein all elements are formed on a same substrate monolithically. On each facet of the optical integrated circuit chip (10), an Anti-Reflection coating (12, 14) is formed respectively. A lens (30), an optical filter (32) and an external resonator mirror (28) are located outside of the optical integrated circuit chip (10), wherein an external cavity laser is formed with a semiconductor optical amplifier (SOA) section (20) operating as gain section, a partially reflecting mirror (16) operating as first reflecting mirror and an external resonator mirror (28) operating as a second mirror.
摘要翻译：本发明的目的是提供一种能够提供宽范围的可变波长并减少耦合损耗的光学集成器件。光集成电路芯片（10）包括半导体光放大器部分（20），相位控制部分（18），具有光功率分配器功能的部分反射镜（16）和马赫 - 策德尔光调制器（22），其中所有元件均匀地形成在相同的衬底上。在光集成电路芯片（10）的每个面上分别形成防反射涂层（12,14）。透镜（30），滤光器（32）和外部谐振镜（28）位于光集成电路芯片（10）的外部，其中外腔激光器形成有半导体光放大器（SOA）部分 20）作为增益部分工作，作为第一反射镜操作的部分反射镜（16）和作为第二反射镜操作的外部谐振器反射镜（28）。

6. 发明授权

US08144738B2 External cavity wavelength tunable laser device and optical output module 失效
标题翻译：外腔波长可调激光器件和光输出模块
公开(公告)号：US08144738B2
公开(公告)日：2012-03-27
申请号：US13165288
申请日：2011-06-21
申请人： Kenji Sato , Jan De Merli , Kenji Mizutani , Koji Kudo , Shinya Sudo , Mads L. Nielsen
发明人： Kenji Sato , Jan De Merli , Kenji Mizutani , Koji Kudo , Shinya Sudo , Mads L. Nielsen
IPC分类号： H01S3/10 , H01S3/08
CPC分类号： H01S5/141
摘要： In an external cavity wavelength tunable laser device including an external cavity (20) which includes a semiconductor optical amplifier (2) and performs laser oscillation operation by feeding back external light, a wavelength tunable mirror (7) having at least a single peak reflection spectrum characteristic within a laser wavelength tuning range is placed on one end of the external cavity (20), and a Fabry Perot mode interval determined by the effective length of the external cavity (20) is not less than 1/10 times and not more than 10 times the reflection band full width half maximum of the wavelength tunable mirror (7).
摘要翻译：在包括具有半导体光放大器（2）的外部空腔（20）并通过反馈外部光进行激光振荡操作的外腔波长可调激光器件中，具有至少一个单峰反射光谱的波长可调谐镜（7）在激光波长调谐范围内的特征放置在外腔（20）的一端，由外腔（20）的有效长度确定的法布里珀罗模式间隔不小于1/10倍，不大于 10倍波长可调镜（7）的反射带全宽半最大值。

7. 发明申请

US20090274187A1 Semiconductor Laser, Module and Optical Transmitter 失效
标题翻译：半导体激光器，模块和光发射机
公开(公告)号：US20090274187A1
公开(公告)日：2009-11-05
申请号：US12086287
申请日：2007-01-10
申请人： Koji Kudo , Shinya Sudo , Kenji Sato , Kenji Mizutani
发明人： Koji Kudo , Shinya Sudo , Kenji Sato , Kenji Mizutani
IPC分类号： H01S5/028 , H01S5/026 , H01S5/24
CPC分类号： H01S5/026
摘要： A semiconductor optical waveguide-A having an optical amplification function and a semiconductor optical waveguide-B having a light control function are integrated together on the same substrate. A facet of the semiconductor optical waveguide-A facing an isolation trench and a facet of the semiconductor optical waveguide-B facing the isolation trench are configured as a composite optical reflector/optical connector using an optical interference. The facet of the semiconductor optical waveguide-A achieves an optical reflectivity not higher than the reflectivity corresponding to a cleaved facet and not smaller than several percent, and an optical coupling coefficient of not lower than 50% between the semiconductor optical waveguide-A and the semiconductor optical waveguide-B.
摘要翻译：具有光放大功能的半导体光波导A和具有光控功能的半导体光波导-B一起集成在同一基板上。面向隔离沟槽的半导体光波导A的面和面向隔离沟槽的半导体光波导-B的面被配置为使用光学干涉的复合光反射器/光连接器。半导体光波导A的小面实现不高于对应于切割面的反射率并且不小于几个百分比的光学反射率，并且半导体光波导A与第二半导体光波导A之间的光耦合系数不低于50％半导体光波导-B。

8. 发明申请

US20070104242A1 Distributed-feedback semiconductor laser, distributed-feedback semiconductor laser array, and optical module 审中-公开
标题翻译：分布反馈半导体激光器，分布反馈半导体激光器阵列和光学模块
公开(公告)号：US20070104242A1
公开(公告)日：2007-05-10
申请号：US10580560
申请日：2004-11-12
申请人： Koji Kudo , Kenji Mizutani , Kenji Sato , Tomoaki Kato
发明人： Koji Kudo , Kenji Mizutani , Kenji Sato , Tomoaki Kato
IPC分类号： H01S3/08
CPC分类号： B82Y20/00 , H01S5/0264 , H01S5/028 , H01S5/1014 , H01S5/1039 , H01S5/124 , H01S5/2224 , H01S5/227 , H01S5/34306 , H01S5/4031 , H01S5/4087
摘要： A distributed-feedback semiconductor laser as a direct modulation light source with a modulation rate over 10 Gb/s having (1) a low threshold current characteristic, (2) a high single-mode characteristic, (3) a high resonant frequency (fr) characteristic, (4) a high temperature characteristic, and (5) adaptability to wide wavelength band and an extremely short active region. The distributed-feedback semiconductor laser 1 comprises an active region 30 for generating the gain of the laser beam and a diffraction grating 13 formed in the active region 30. Out of the two front and back end surfaces sandwiching the active region 30, the front end surface 1a has a reflectivity of 1 percent or less, and the back end surface 1b has a reflectivity of 30 percent or more when viewed from the back end surface 1b toward the front. The coupling coefficient κ of the diffraction grating 13 is 100 cm−1 or more, and the length L of the active region 30 is 150 μm or less. A combination of κ and L provided that Δα/gth is 1 or more is used where Δα is the gain difference between modes and gth=(internal loss αi+mirror loss αm) is the threshold gain.
摘要翻译：作为具有（1）低阈值电流特性的调制速率超过10Gb / s的直接调制光源的分布反馈半导体激光器，（2）高单模特性，（3）高谐振频率（fr ）特性，（4）高温特性，（5）适用于宽波段和极短的有源区。分布反馈半导体激光器1包括用于产生激光束的增益的有源区域30和形成在有源区域30中的衍射光栅13.在夹持有源区域30的两个前端和后端表面之外，前端表面1a的反射率为1％以下，后端面1b从后端面1b向前方观察时的反射率为30％以上。衍射光栅13的耦合系数kapp为100cm -1以上，有源区30的长度L为150μm以下。使用kappa和L的组合，其中使用Deltaalpha / g第1个或更多个，其中Deltaalpha是模式之间的增益差异，并且第g个内部损失α_{i +镜像损失alpha ）是阈值增益。}

9. 发明授权

US08457168B2 Semiconductor laser, module and optical transmitter 失效
标题翻译：半导体激光器，模块和光发射机
公开(公告)号：US08457168B2
公开(公告)日：2013-06-04
申请号：US12086287
申请日：2007-01-10
申请人： Koji Kudo , Shinya Sudo , Kenji Sato , Kenji Mizutani
发明人： Koji Kudo , Shinya Sudo , Kenji Sato , Kenji Mizutani
IPC分类号： H01S5/00
CPC分类号： H01S5/026
摘要： A semiconductor optical waveguide-A having an optical amplification function and a semiconductor optical waveguide-B having a light control function are integrated together on the same substrate. A facet of the semiconductor optical waveguide-A facing an isolation trench and a facet of the semiconductor optical waveguide-B facing the isolation trench are configured as a composite optical reflector/optical connector using an optical interference. The facet of the semiconductor optical waveguide-A achieves an optical reflectivity not higher than the reflectivity corresponding to a cleaved facet and not smaller than several percent, and an optical coupling coefficient of not lower than 50% between the semiconductor optical waveguide-A and the semiconductor optical waveguide-B.
摘要翻译：具有光放大功能的半导体光波导A和具有光控功能的半导体光波导-B一起集成在同一基板上。面向隔离沟槽的半导体光波导A的面和面向隔离沟槽的半导体光波导-B的面被配置为使用光学干涉的复合光反射器/光连接器。半导体光波导A的小面实现不高于对应于切割面的反射率并且不小于几个百分比的光学反射率，并且半导体光波导A与第二半导体光波导A之间的光耦合系数不低于50％半导体光波导-B。

10. 发明授权

US08284807B2 Wavelength-tunable laser apparatus and wavelength changing method thereof 有权
标题翻译：波长可调激光装置及其波长变换方法
公开(公告)号：US08284807B2
公开(公告)日：2012-10-09
申请号：US12865779
申请日：2008-12-09
申请人： Kenji Mizutani , Kenji Sato , Koji Kudo
发明人： Kenji Mizutani , Kenji Sato , Koji Kudo
IPC分类号： H01S3/10 , H01S3/13 , H01S3/00
CPC分类号： H01S5/141 , H01S5/0617 , H01S5/06255 , H01S5/06837 , H01S5/0687
摘要： An object is to provide a wavelength-tunable laser apparatus that prevents a grid-hopping upon wavelength change, and a wavelength changing method thereof. A wavelength-tunable laser apparatus 101 according to the present invention includes a semiconductor optical amplifier 102 and a periodic wavelength-selection filter 106. Further, the wavelength-tunable laser apparatus 101 includes a phase control unit 111 that concurrently controls a current applied to the semiconductor optical amplifier 102 and a phase tuning of a wavelength-tunable laser under an open-loop control. Thus, dark-tuning can be achieved.
摘要翻译：本发明的目的是提供一种波长可调谐激光装置及其波长改变方法，该激光装置防止波长变化时的跳网。根据本发明的波长可调激光装置101包括半导体光放大器102和周期性波长选择滤波器106.此外，波长可调激光装置101包括相位控制单元111，其同时控制施加到半导体光放大器102和在开环控制下的波长可调激光器的相位调谐。因此，可以实现暗调。

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