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1. 发明授权

US07674634B2 Method of producing semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US07674634B2
公开(公告)日：2010-03-09
申请号：US10532249
申请日：2003-11-05
申请人： Kenji Maruyama , Masaki Kurasawa , Masao Kondo , Yoshihiro Arimoto
发明人： Kenji Maruyama , Masaki Kurasawa , Masao Kondo , Yoshihiro Arimoto
IPC分类号： H01L21/8246
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55
摘要： A semiconductor device incorporating a capacitor structure that includes a ferroelectric thin film is obtained by forming, on a single crystalline substrate 10 having a surface suited for growing thereon a thin film layer of ferroelectric single crystal having a plane (111), a ferroelectric single crystalline thin film 12′ containing Pb and having a plane (111) 11 in parallel with the surface of the substrate (or a ferroelectric polycrystalline thin film containing Pb and oriented parallel with the plane (111) in parallel with the surface of the substrate) and part 16 of a circuit of a semiconductor device, to thereby fabricate the single crystalline substrate 10 having said ferroelectric thin film containing Pb and said part of the circuit of the semiconductor device; and bonding said single crystalline substrate 10 to another substrate on which the other circuit of the semiconductor device has been formed in advance, to couple the two circuits together.The capacitor in the semiconductor device thus obtained includes a ferroelectric thin film having a large amount of polarizing charge. The semiconductor device can be used as a highly reliable nonvolatile memory.
摘要翻译：通过在具有适于生长表面的单晶衬底10上形成具有平面（111）的铁电单晶薄膜层，铁电单结晶含有Pb的具有与基板表面平行的平面（111）11的薄膜12'（或含有Pb的铁电体多晶薄膜，与基板的表面平行取向平行），以及半导体器件的电路的第16部分，从而制造具有含有Pb的所述铁电薄膜和所述半导体器件的所述电路的所述部分的单晶衬底10; 并将所述单晶衬底10预先连接到其上形成有半导体器件的另一电路的另一衬底上，以将两个电路耦合在一起。由此得到的半导体装置中的电容器具有大量的极化电荷的铁电薄膜。半导体器件可以用作高度可靠的非易失性存储器。

2. 发明申请

US20060166378A1 Method of producing semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US20060166378A1
公开(公告)日：2006-07-27
申请号：US10532249
申请日：2003-11-05
申请人： Kenji Maruyama , Masaki Kurasawa , Masao Kondo , Yoshihiro Arimoto
发明人： Kenji Maruyama , Masaki Kurasawa , Masao Kondo , Yoshihiro Arimoto
IPC分类号： H01L21/20 , H01L21/00
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55
摘要： A semiconductor device incorporating a capacitor structure that includes a ferroelectric thin film is obtained by forming, on a single crystalline substrate 10 having a surface suited for growing thereon a thin film layer of ferroelectric single crystal having a plane (111), a ferroelectric single crystalline thin film 12′ containing Pb and having a plane (111) 11 in parallel with the surface of the substrate (or a ferroelectric polycrystalline thin film containing Pb and oriented parallel with the plane (111) in parallel with the surface of the substrate) and part 16 of a circuit of a semiconductor device, to thereby fabricate the single crystalline substrate 10 having said ferroelectric thin film containing Pb and said part of the circuit of the semiconductor device; and bonding said single crystalline substrate 10 to another substrate on which the other circuit of the semiconductor device has been formed in advance, to couple the two circuits together. The capacitor in the semiconductor device thus obtained includes a ferroelectric thin film having a large amount of polarizing charge. The semiconductor device can be used as a highly reliable nonvolatile memory.
摘要翻译：通过在具有适于生长表面的单晶衬底10上形成具有平面（111）的铁电单晶薄膜层，铁电单结晶含有Pb的具有与基板表面平行的平面（111）11的薄膜12'（或含有Pb的铁电体多晶薄膜，与基板的表面平行取向平行），以及半导体器件的电路的第16部分，从而制造具有含有Pb的所述铁电薄膜和所述半导体器件的所述电路的所述部分的单晶衬底10; 并将所述单晶衬底10预先连接到其上形成有半导体器件的另一电路的另一衬底上，以将两个电路耦合在一起。由此得到的半导体装置中的电容器具有极性电荷量大的铁电薄膜。半导体器件可以用作高度可靠的非易失性存储器。

3. 发明授权

US06943397B2 Device having capacitor and its manufacture 有权
标题翻译：具有电容器及其制造的装置
公开(公告)号：US06943397B2
公开(公告)日：2005-09-13
申请号：US10647246
申请日：2003-08-26
申请人： Masao Kondo , Hideki Yamawaki , Kenji Maruyama , Kazuaki Kurihara , Masaharu Hida , Shigeyoshi Umemiya , Masaki Kurasawa
发明人： Masao Kondo , Hideki Yamawaki , Kenji Maruyama , Kazuaki Kurihara , Masaharu Hida , Shigeyoshi Umemiya , Masaki Kurasawa
IPC分类号： H01L27/04 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/822 , H01L21/8246 , H01L27/105 , H01L41/08 , H01L41/09 , H01L41/18 , H01L41/22 , H01L41/29 , H01L41/318 , H03H3/08 , H03H9/02 , H01L29/76
CPC分类号： H01L28/55 , H01L21/31691 , H01L28/60 , H03H9/02574
摘要： A device having a capacitor element includes: an underlying body having a non-orientated first surface; a lower electrode formed on the first surface of the underlying body, the lower electrode containing conductive metal oxide and not containing noble metal, such as LaNiO3, the conductive metal oxide having a (0 0 1) orientated ABO3 type pervskite structure; a ferroelectric layer formed on the lower electrode, having a rhombohedral ABO3 type pervskite structure, the ferroelectric layer being preferentially (0 0 1) orientated in conformity with the orientation of the lower electrode, and an upper electrode formed on the ferroelectric layer.
摘要翻译：具有电容器元件的器件包括：具有非取向第一表面的下体; 形成在下体的第一表面上的下电极，下电极包含导电金属氧化物，不含贵金属，例如LaNiO 3，导电金属氧化物具有（0 1）取向 ABO 3型钙钛矿结构; 形成在下电极上的具有菱形ABO 3型钙钛矿结构的铁电层，所述铁电层优选（0 1）与所述下电极的取向一致，所述上电极形成在铁电层上。

4. 发明授权

US07153705B2 Electronic device with electrode and its manufacture 失效
标题翻译：带电极的电子设备及其制造
公开(公告)号：US07153705B2
公开(公告)日：2006-12-26
申请号：US10821841
申请日：2004-04-12
申请人： Kenji Maruyama , Masao Kondo , Masaki Kurasawa
发明人： Kenji Maruyama , Masao Kondo , Masaki Kurasawa
IPC分类号： H01L21/00
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/56 , H01L28/60
摘要： A method of manufacturing an electronic device includes the steps of: (a) preparing a (001) oriented ReO3 layer; and (b) forming a (001) oriented oxide ferroelectric layer having a perovskite structure on the ReO3 layer. Preferably, the step (a) includes the steps of: (a-1) preparing a (001) oriented MgO layer; and (a-2) forming a (001) oriented ReO3 layer on the MgO layer. An electronic device capable of obtaining a ferroelectric layer of a large polarization and a method of manufacturing the same are provided.
摘要翻译：制造电子器件的方法包括以下步骤：（a）制备（001）取向的ReO 3 N 3层; 和（b）在ReO 3层上形成具有钙钛矿结构的（001）取向的氧化物铁电层。优选地，步骤（a）包括以下步骤：（a-1）制备（001）取向的MgO层; 和（a-2）在MgO层上形成（001）取向的ReO 3 3层。提供一种能够获得大极化的铁电体层的电子装置及其制造方法。

5. 发明授权

US06744085B2 Electronic device with electrode and its manufacture 失效
公开(公告)号：US06744085B2
公开(公告)日：2004-06-01
申请号：US10076349
申请日：2002-02-19
申请人： Kenji Maruyama , Masao Kondo , Masaki Kurasawa
发明人： Kenji Maruyama , Masao Kondo , Masaki Kurasawa
IPC分类号： H01L2972
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/56 , H01L28/60
摘要： A method of manufacturing an electronic device includes the steps of: (a) preparing a (001) oriented ReO3 layer; and (b) forming a (001) oriented oxide ferroelectric layer having a perovskite structure on the ReO3 layer. Preferably, the step (a) includes the steps of: (a-1) preparing a (001) oriented MgO layer; and (a-2) forming a (001) oriented ReO3 layer on the MgO layer. An electronic device capable of obtaining a ferroelectric layer of a large polarization and a method of manufacturing the same are provided.

6. 发明授权

US06974985B2 Capacitor and method for fabricating the same, and semiconductor device and method for fabricating the same 有权
标题翻译：电容器及其制造方法，半导体器件及其制造方法
公开(公告)号：US06974985B2
公开(公告)日：2005-12-13
申请号：US09960398
申请日：2001-09-24
申请人： Masaki Kurasawa , Kazuaki Kurihara , Kenji Maruyama
发明人： Masaki Kurasawa , Kazuaki Kurihara , Kenji Maruyama
IPC分类号： H01L27/105 , H01L21/02 , H01L21/8246 , H01L27/108
CPC分类号： H01L28/55 , H01L28/91
摘要： The semiconductor device comprises: a memory cell transistor formed on a semiconductor substrate 10; insulation films 22, 30 covering the memory cell transistor; a buffer structure 40 formed on the insulation film; and a capacitor including a lower electrode 42 formed on the buffer structure 40 and electrically connected to the source/drain diffused layer 20; a capacitor dielectric film 44 formed on the lower electrode 42, and formed of a perovskite ferroelectric material having a smaller thermal expansion coefficient than that of the buffer structure 40 and having a crystal oriented substantially perpendicular to a surface of the lower electrode 42. The buffer structure for mitigating the influence of the stress from the substrate is formed below the lower electrode, whereby a polarization direction of the capacitor dielectric film can be made parallel with a direction of an electric field applied between the upper electrode and the lower electrode. An intrinsic polarization of the ferroelectric film can be utilized as it is.
摘要翻译：半导体器件包括：形成在半导体衬底10上的存储单元晶体管; 覆盖存储单元晶体管的绝缘膜22,30; 形成在绝缘膜上的缓冲结构40; 以及电容器，包括形成在缓冲结构40上并电连接到源/漏扩散层20的下电极42; 形成在下部电极42上的电容电介质膜44，由与缓冲结构体40的热膨胀系数相比具有较小的热膨胀系数的钙钛矿型铁电体材料形成，并具有大致垂直于下部电极42的表面取向的晶体。用于减轻来自基板的应力的影响的缓冲结构形成在下电极的下方，由此可以使电容器电介质膜的极化方向与施加在上电极和下电极之间的电场的方向平行。可以直接利用铁电体膜的固有极化。

7. 发明申请

US20050052823A1 Ferroelectric capacitor 有权
标题翻译：铁电电容器
公开(公告)号：US20050052823A1
公开(公告)日：2005-03-10
申请号：US10967210
申请日：2004-10-19
申请人： Masaki Kurasawa , Kenji Maruyama
发明人： Masaki Kurasawa , Kenji Maruyama
IPC分类号： H01L27/105 , H01L21/02 , H01L21/8246 , H01L27/115 , H01G4/06
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/56
摘要： A ferroelectric capacitor includes a lower electrode, a ferroelectric film provided over the lower electrode and having a perovskite-type structure and an upper electrode provided over the ferroelectric film. The ferroelectric film includes a first ferroelectric film part having a first crystal system and formed along at least one interface with at least one of the lower electrode and the upper electrode and a second ferroelectric film part having a second crystal system that is different from the first crystal system.
摘要翻译：铁电电容器包括下电极，设置在下电极上并具有钙钛矿型结构的铁电体膜和设置在铁电体膜上的上电极。铁电体膜包括具有第一晶体系的第一铁电体膜部分，并且沿着与下部电极和上部电极中的至少一个的至少一个界面形成，第二铁电体膜部分具有与第一晶体系统不同的第二晶体系统晶体系统。

8. 发明授权

US06841817B2 Ferroelectric capacitor and a semiconductor device 有权
标题翻译：铁电电容器和半导体器件
公开(公告)号：US06841817B2
公开(公告)日：2005-01-11
申请号：US10103894
申请日：2002-03-25
申请人： Masaki Kurasawa , Kenji Maruyama
发明人： Masaki Kurasawa , Kenji Maruyama
IPC分类号： H01L27/105 , H01L21/02 , H01L21/8246 , H01L27/115 , H01L29/76
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/56
摘要： A ferroelectric capacitor includes a lower electrode, a ferroelectric film provided over the lower electrode and having a perovskite-type structure and an upper electrode provided over the ferroelectric film. The ferroelectric film includes a first ferroelectric film part having a first crystal system and formed along at least one interface with at least one of the lower electrode and the upper electrode and a second ferroelectric film part having a second crystal system that is different from the first crystal system.
摘要翻译：铁电电容器包括下电极，设置在下电极上并具有钙钛矿型结构的铁电体膜和设置在铁电体膜上的上电极。铁电体膜包括具有第一晶体系的第一铁电体膜部分，并且沿着与下部电极和上部电极中的至少一个的至少一个界面形成，第二铁电体膜部分具有与第一晶体系统不同的第二晶体系统晶体系统。

9. 发明授权

US07423308B2 Ferroelectric capacitor 有权
标题翻译：铁电电容器
公开(公告)号：US07423308B2
公开(公告)日：2008-09-09
申请号：US10967210
申请日：2004-10-19
申请人： Masaki Kurasawa , Kenji Maruyama
发明人： Masaki Kurasawa , Kenji Maruyama
IPC分类号： H01L29/76 , H01L27/108
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/56
摘要： A ferroelectric capacitor includes a lower electrode, a ferroelectric film provided over the lower electrode and having a perovskite-type structure and an upper electrode provided over the ferroelectric film. The ferroelectric film includes a first ferroelectric film part having a first crystal system and formed along at least one interface with at least one of the lower electrode and the upper electrode and a second ferroelectric film part having a second crystal system that is different from the first crystal system.
摘要翻译：铁电电容器包括下电极，设置在下电极上并具有钙钛矿型结构的铁电体膜和设置在铁电体膜上的上电极。铁电体膜包括具有第一晶体系的第一铁电体膜部分，并且沿着与下部电极和上部电极中的至少一个的至少一个界面形成，第二铁电体膜部分具有与第一晶体系统不同的第二晶体系统晶体系统。

10. 发明申请

US20060131627A1 Ferroelectric material, its manufacture method and ferroelectric memory 审中-公开
标题翻译：铁电材料，其制造方法和铁电存储器
公开(公告)号：US20060131627A1
公开(公告)日：2006-06-22
申请号：US11106529
申请日：2005-04-15
申请人： Masao Kondo , Kenji Maruyama , Risako Ueno , Hiroshi Funakubo , Hiroshi Uchida , Seiichiro Koda , Hiroshi Nakaki
发明人： Masao Kondo , Kenji Maruyama , Risako Ueno , Hiroshi Funakubo , Hiroshi Uchida , Seiichiro Koda , Hiroshi Nakaki
IPC分类号： H01L29/94 , H01L29/76 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L21/02197 , C23C18/1216 , C23C18/1275 , H01L21/02282 , H01L21/02337 , H01L21/02356 , H01L21/31691 , H01L27/11502 , H01L27/11585 , H01L27/1159 , H01L28/56
摘要： BiFeO3 precursor solution is coated on the surface of an underlying member. Teat treatment is performed after the coating to form a dielectric film. The dielectric film is heated in a non-oxidizing atmosphere to crystallize the dielectric film. With this method, a ferroelectric material can be obtained which contains constituent elements of Bi, Fe and O and has crystal lattice of a tetragonal or orthorhombic system.
摘要翻译： BiFeO 3 3前体溶液涂覆在底层构件的表面上。在涂覆之后进行乳液处理以形成电介质膜。电介质膜在非氧化性气氛中加热，使电介质膜结晶。通过这种方法，可以获得含有Bi，Fe和O的构成元素并具有四方晶系或斜方晶系的晶格的铁电体材料。

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