会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 5. 发明授权
    • Negative feedback variable gain amplifier circuit
    • 负反馈可变增益放大器电路
    • US5661437A
    • 1997-08-26
    • US514381
    • 1995-08-11
    • Kenjiro NishikawaTsuneo Tokumitsu
    • Kenjiro NishikawaTsuneo Tokumitsu
    • H03F1/34H03G1/00H03G3/30
    • H03F1/34H03F1/342H03G1/007H03F2200/151
    • A variable gain amplifier circuit in which a feedback circuit that feeds back the output signal of an amplifier from its output terminal to its input terminal is composed of an FET. The gate terminal of the feedback FET is connected to the output terminal of the amplifier through a capacitor, and the source terminal of the feedback FET is connected to the input terminal of the amplifier. The gain of the amplifying circuit is controlled by varying the transconductance of the feedback FET by controlling a bias voltage applied to the gate or drain terminal of the feedback FET. This makes it possible to control the gain independently of the physical dimension of the feedback FET, and at the same time, to prevent the input signal from being transmitted from the input side to the output side through the feedback circuit.
    • 一种可变增益放大器电路,其中反馈电路将放大器的输出信号从其输出端子反馈到其输入端子由FET组成。 反馈FET的栅极端子通过电容器连接到放大器的输出端子,反馈FET的源极端子连接到放大器的输入端子。 通过控制施加到反馈FET的栅极或漏极端子的偏置电压来改变反馈FET的跨导来控制放大电路的增益。 这使得可以独立于反馈FET的物理尺寸来控制增益,并且同时防止输入信号通过反馈电路从输入侧传输到输出侧。
    • 6. 发明申请
    • WIDEBAND LOW-NOISE AMPLIFIER
    • 宽带低噪声放大器
    • US20100066452A1
    • 2010-03-18
    • US12595163
    • 2008-05-16
    • Munenari KawashimaYo YamaguchiKazuhiro UeharaKenjiro Nishikawa
    • Munenari KawashimaYo YamaguchiKazuhiro UeharaKenjiro Nishikawa
    • H03F1/34
    • H03F1/34H03F1/26H03F1/42H03F1/56H03F3/19H03F2200/108H03F2200/144H03F2200/151H03F2200/222H03F2200/294H03F2200/36H03F2200/451
    • A wideband low-noise amplifier of the present invention is designed such that an input terminal is connected to a base of a first transistor, one terminal of a first passive element, and one terminal of a third passive element; an emitter of the first transistor is grounded; a collector of the first transistor is connected to an output terminal, a base of a second transistor, one terminal of a capacitor, and one terminal of a second passive element; the other terminal of the first passive element is connected to the other terminal of the capacitor; an emitter of the second transistor is connected to the other terminal of the third passive element; and a power terminal is connected to a collector of the second transistor and the other terminal of the second passive element, wherein impedance of the third passive element is determined based on impedance of the first transistor whose emitter size is determined to suite desired saturation level of amplification, thus establishing input impedance matching.
    • 本发明的宽带低噪声放大器被设计成使得输入端子连接到第一晶体管的基极,第一无源元件的一个端子和第三无源元件的一个端子; 第一晶体管的发射极接地; 第一晶体管的集电极连接到输出端子,第二晶体管的基极,电容器的一个端子和第二无源元件的一个端子; 第一无源元件的另一个端子连接到电容器的另一个端子; 第二晶体管的发射极连接到第三无源元件的另一个端子; 并且电源端子连接到所述第二晶体管的集电极和所述第二无源元件的另一端子,其中所述第三无源元件的阻抗基于所述第一晶体管的阻抗来确定,所述第一晶体管的发射极尺寸被确定为将所需的饱和电平 放大,从而建立输入阻抗匹配。