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1. 发明申请

US20100207167A1 COMPOUND SEMICONDUCTOR DEVICE INCLUDING AIN LAYER OF CONTROLLED SKEWNESS 有权
标题翻译：化合物半导体器件，其中包括控制层的一层
公开(公告)号：US20100207167A1
公开(公告)日：2010-08-19
申请号：US12772624
申请日：2010-05-03
申请人： Kenji IMANISHI , Toshihide KIKKAWA , Takeshi TANAKA , Yoshihiko MORIYA , Yohei OTOKI
发明人： Kenji IMANISHI , Toshihide KIKKAWA , Takeshi TANAKA , Yoshihiko MORIYA , Yohei OTOKI
IPC分类号： H01L29/205 , H01L21/20
CPC分类号： H01L21/02581 , H01L21/02378 , H01L21/0243 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/0262
摘要： A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AlN layer, wherein an interface between the AlN layer and nitride semiconductor layer has a larger roughness than an interface between the single crystal substrate and AlN layer, and a skewness of the upper surface of the AlN layer is positive.
摘要翻译：半导体外延基板包括：单晶基板; 在单晶衬底上外延生长的AlN层; 以及在所述AlN层上外延生长的氮化物半导体层，其中，所述AlN层与所述氮化物半导体层之间的界面的粗糙度大于所述单晶衬底和所述AlN层之间的界面，并且所述AlN层的上表面的倾斜度是积极的。

2. 发明申请

US20100207124A1 COMPOUND SEMICONDUCTOR DEVICE INCLUDING AIN LAYER OF CONTROLLED SKEWNESS 有权
公开(公告)号：US20100207124A1
公开(公告)日：2010-08-19
申请号：US12772661
申请日：2010-05-03
申请人： Kenji IMANISHI , Toshihide KIKKAWA , Takeshi TANAKA , Yoshihiko MORIYA , Yohei OTOKI
发明人： Kenji IMANISHI , Toshihide KIKKAWA , Takeshi TANAKA , Yoshihiko MORIYA , Yohei OTOKI
IPC分类号： H01L29/205 , H01L21/335 , H01L29/778
CPC分类号： H01L21/02581 , H01L21/02378 , H01L21/0243 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/0262
摘要： A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AlN layer, wherein an interface between the AlN layer and nitride semiconductor layer has a larger roughness than an interface between the single crystal substrate and AlN layer, and a skewness of the upper surface of the AlN layer is positive.

3. 发明申请

US20080237610A1 COMPOUND SEMICONDUCTOR DEVICE INCLUDING AIN LAYER OF CONTROLLED SKEWNESS 有权
标题翻译：化合物半导体器件，其中包括控制层的一层
公开(公告)号：US20080237610A1
公开(公告)日：2008-10-02
申请号：US12059693
申请日：2008-03-31
申请人： Kenji IMANISHI , Toshihide KIKKAWA , Takeshi TANAKA , Yoshihiko MORIYA , Yohei OTOKI
发明人： Kenji IMANISHI , Toshihide KIKKAWA , Takeshi TANAKA , Yoshihiko MORIYA , Yohei OTOKI
IPC分类号： H01L29/267 , H01L21/203 , H01L21/338
CPC分类号： H01L21/02581 , H01L21/02378 , H01L21/0243 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/0262
摘要： A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AN layer, wherein an interface between the AlN layer and nitride semiconductor layer has a larger roughness than an interface between the single crystal substrate and AlN layer, and a skewness of the upper surface of the AlN layer is positive.
摘要翻译：半导体外延基板包括：单晶基板; 在单晶衬底上外延生长的AlN层; 以及在所述AN层上外延生长的氮化物半导体层，其中，所述AlN层与所述氮化物半导体层之间的界面的粗糙度大于所述单晶衬底和AlN层之间的界面，并且所述AlN层的上表面的偏斜度是积极的。

4. 发明申请

US20090065787A1 COMPOUND SEMICONDUCTOR STRUCTURE 有权
标题翻译：化合物半导体结构
公开(公告)号：US20090065787A1
公开(公告)日：2009-03-12
申请号：US12248357
申请日：2008-10-09
申请人： Toshihide KIKKAWA , Kenji IMANISHI
发明人： Toshihide KIKKAWA , Kenji IMANISHI
IPC分类号： H01L29/205 , H01L29/778 , H01L21/336
CPC分类号： H01L29/7787 , H01L21/02378 , H01L21/02425 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L29/66462
摘要： A method for manufacturing a compound semiconductor structure, includes (a) selecting a conductive SiC substrate in accordance with color and resistivity and (b) epitaxially growing a GaN series compound semiconductor layer on the selected conductive SiC substrate. The step (a) preferably selects a conductive SiC substrate whose main color is green, whose conductivity type is n-type and whose resistivity is 0.08 Ωcm to 1×105 Ωcm, or whose main color is black, whose conductivity type is p-type and whose resistivity is 1×103 Ωcm to 1×105 Ωcm, or whose main color is blue, whose conductivity type is p-type and whose resistivity is 10 Ωcm to 1×105 Ωcm. The step (b) preferably includes (b-1) growing an AlInGaN layer having a thickness not thinner than 10 μm on the conductive SiC substrate by hydride VPE.
摘要翻译：一种化合物半导体结构的制造方法，包括：（a）根据颜色和电阻率选择导电性SiC基板，（b）在选择的导电性SiC基板上外延生长GaN系化合物半导体层。步骤（a）优选选择导电类型为n型，电导率为0.08Ωg至1×1050Ωg的主颜色为绿色的导电性SiC衬底，或其主要颜色为黑色，导电类型为p型，其导电类型为电阻率为1×10 3Ω·mol〜1×10 5Ω·cm，或其主要颜色为蓝色，其导电类型为p型，电阻率为10Ω·cm〜1×10-5Ω·cm。步骤（b）优选包括（b-1）在导电SiC衬底上通过氢化物VPE生长具有不薄于10μm的厚度的AlInGaN层。

5. 发明申请

US20080237606A1 COMPOUND SEMICONDUCTOR DEVICE 有权
标题翻译：化合物半导体器件
公开(公告)号：US20080237606A1
公开(公告)日：2008-10-02
申请号：US12059708
申请日：2008-03-31
申请人： Toshihide KIKKAWA , Kenji IMANISHI
发明人： Toshihide KIKKAWA , Kenji IMANISHI
IPC分类号： H01L29/778
CPC分类号： H01L29/7783 , H01L29/2003 , H01L29/66462
摘要： A compound semiconductor device having a transistor structure, includes a substrate, a first layer formed on the substrate and comprising GaN, a second layer formed over the first layer and containing InN whose lattice constant is larger than the first layer, a third layer formed over the second layer and comprising GaN whose energy bandgap is smaller than the second layer, and a channel region layer formed on the third layer.
摘要翻译：具有晶体管结构的化合物半导体器件包括衬底，形成在衬底上并包含GaN的第一层，形成在第一层上并包含晶格常数大于第一层的InN的第二层，形成在第三层上的第三层第二层并且包括其能带隙小于第二层的GaN，以及形成在第三层上的沟道区层。

6. 发明申请

US20120138944A1 COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：化合物半导体器件及其制造方法
公开(公告)号：US20120138944A1
公开(公告)日：2012-06-07
申请号：US13294654
申请日：2011-11-11
申请人： Masahito KANAMURA , Toshihide KIKKAWA , Kenji IMANISHI
发明人： Masahito KANAMURA , Toshihide KIKKAWA , Kenji IMANISHI
IPC分类号： H01L29/778 , H01L21/335
CPC分类号： H01L29/7787 , H01L29/41766 , H01L29/42376 , H01L29/47 , H01L29/513 , H01L29/66462
摘要： A compound semiconductor device includes: a compound semiconductor layer; a first film formed over the compound semiconductor layer, the first film being in a negatively charged state or a non-charged state at an interface with the compound semiconductor layer; a second film formed over the first film, the second film being in a positively charged state at an interface with the first film; and a gate electrode to be embedded in an opening formed in the second film.
摘要翻译：化合物半导体器件包括：化合物半导体层; 形成在所述化合物半导体层上的第一膜，所述第一膜在与所述化合物半导体层的界面处于带负电状态或非带电状态; 形成在所述第一膜上的第二膜，所述第二膜在与所述第一膜的界面处于带电状态; 以及嵌入到形成在第二膜中的开口中的栅电极。

7. 发明申请

US20120138948A1 COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：化合物半导体器件及其制造方法
公开(公告)号：US20120138948A1
公开(公告)日：2012-06-07
申请号：US13294726
申请日：2011-11-11
申请人： Toyoo MIYAJIMA , Toshihide KIKKAWA , Kenji IMANISHI , Toshihiro OHKI , Masahito KANAMURA
发明人： Toyoo MIYAJIMA , Toshihide KIKKAWA , Kenji IMANISHI , Toshihiro OHKI , Masahito KANAMURA
IPC分类号： H01L29/778 , H01L21/20
CPC分类号： H01L29/66462 , H01L29/2003 , H01L29/4236 , H01L29/7787
摘要： A compound semiconductor device includes: an electron transport layer formed over a substrate; an electron supply layer formed over the electron transport layer; and a cap layer formed over the electron supply layer; the cap layer includes a first compound semiconductor layer containing GaN; a second compound semiconductor layer containing AlN, which is formed over the first compound semiconductor layer; a third compound semiconductor layer containing GaN, which is formed over the second compound semiconductor layer; and at least one of a first AlGaN-containing layer and a second AlGaN-containing layer, with the first AlGaN-containing layer formed between the first compound semiconductor layer and the second compound semiconductor layer and the Al content increases toward the second compound semiconductor layer, and the second AlGaN-containing layer formed between the second compound semiconductor layer and the third compound semiconductor layer and the Al content increases toward the second compound semiconductor layer.
摘要翻译：化合物半导体器件包括：形成在衬底上的电子传输层; 形成在电子传输层上的电子供应层; 以及形成在所述电子供给层上的盖层; 盖层包括含有GaN的第一化合物半导体层; 含有AlN的第二化合物半导体层，其形成在所述第一化合物半导体层上; 含有GaN的第三化合物半导体层，其形成在所述第二化合物半导体层上; 以及第一AlGaN含有层和第二含AlGaN的层中的至少一个，其中形成在第一化合物半导体层和第二化合物半导体层之间的第一AlGaN含有层，并且Al含量朝向第二化合物半导体层增加并且形成在第二化合物半导体层和第三化合物半导体层之间的第二AlGaN含量层和Al含量朝向第二化合物半导体层增加。

8. 发明申请

US20080197359A1 COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：化合物半导体器件及其制造方法
公开(公告)号：US20080197359A1
公开(公告)日：2008-08-21
申请号：US12034273
申请日：2008-02-20
申请人： Kenji IMANISHI , Toshihide KIKKAWA
发明人： Kenji IMANISHI , Toshihide KIKKAWA
IPC分类号： H01L29/267 , H01L21/338
CPC分类号： H01L29/66431 , H01L21/02378 , H01L21/02425 , H01L21/02458 , H01L21/02494 , H01L21/02505 , H01L21/0254 , H01L21/02581 , H01L21/0262 , H01L29/107 , H01L29/1608 , H01L29/2003 , H01L29/2203 , H01L29/267 , H01L29/66462 , H01L29/7786 , H01L29/812
摘要： A compound semiconductor device has a buffer layer formed on a conductive SiC substrate, an AlxGa1-xN layer formed on the buffer layer in which an impurity for reducing carrier concentration from an unintentionally doped donor impurity is added and in which the Al composition x is 0
摘要翻译：化合物半导体器件具有形成在导电性SiC衬底上的缓冲层，形成在缓冲层上的Al x Ga 1-x N层，其中添加用于降低来自无意掺杂的施主杂质的载流子浓度的杂质，其中Al组分x为0

9. 发明申请

US20120315743A1 COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：化合物半导体器件及其制造方法
公开(公告)号：US20120315743A1
公开(公告)日：2012-12-13
申请号：US13591401
申请日：2012-08-22
申请人： Toshihide KIKKAWA , Kenji IMANISHI
发明人： Toshihide KIKKAWA , Kenji IMANISHI
IPC分类号： H01L21/20
CPC分类号： H01L29/7783 , H01L29/2003 , H01L29/66462 , H01L29/7787
摘要： A compound semiconductor device is provided with a substrate, an AlN layer formed over the substrate, an AlGaN layer formed over the AlN layer and larger in electron affinity than the AlN layer, another AlGaN layer formed over the AlGaN layer and smaller in electron affinity than the AlGaN layer. Furthermore, there are provided an i-GaN layer formed over the latter AlGaN layer, and an i-AlGaN layer and an n-AlGaN layer formed over the i-GaN layer.
摘要翻译：化合物半导体器件设置有衬底，在衬底上形成的AlN层，在AlN层上形成的AlGaN层和比AlN层更大的电子亲和力，在AlGaN层上形成另一AlGaN层，并且电子亲和力小于 AlGaN层。此外，提供了形成在后面的AlGaN层上的i-GaN层，以及在i-GaN层上形成的i-AlGaN层和n-AlGaN层。

10. 发明申请

US20120139038A1 COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：化合物半导体器件及其制造方法
公开(公告)号：US20120139038A1
公开(公告)日：2012-06-07
申请号：US13238258
申请日：2011-09-21
申请人： Kenji IMANISHI , Toshihide Kikkawa
发明人： Kenji IMANISHI , Toshihide Kikkawa
IPC分类号： H01L29/78 , H01L29/205 , H01L21/336 , B82Y40/00 , B82Y99/00
CPC分类号： H01L29/201 , H01L29/0692 , H01L29/2003 , H01L29/42376 , H01L29/66462 , H01L29/7787
摘要： A first AlGaN layer formed over a substrate, a second AlGaN layer formed over the first AlGaN layer, an electron transit layer formed over the second AlGaN layer, and an electron supply layer formed over the electron transit layer are provided. A relationship of “0≦x1
摘要翻译：提供了形成在衬底上的第一AlGaN层，形成在第一AlGaN层上的第二AlGaN层，形成在第二AlGaN层上的电子迁移层以及形成在电子迁移层上的电子供应层。当第一AlGaN层的组成由Al x Ga 1-x N N表示，并且第二AlGaN层的组成由Al x Ga 1-x 2 N表示时，找到“0＆nlE; x1

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