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1. 发明申请

US20110076842A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20110076842A1
公开(公告)日：2011-03-31
申请号：US12894424
申请日：2010-09-30
申请人： Kenichi YOSHINO , Kiyotaka Miyano , Tomonori Aoyama
发明人： Kenichi YOSHINO , Kiyotaka Miyano , Tomonori Aoyama
IPC分类号： H01L21/26
CPC分类号： H01L29/6659 , H01L21/2686 , H01L21/324 , H01L29/7833
摘要： An ion implantation is performed to implant ions into a silicon substrate, and a microwave irradiation is performed to irradiate the silicon substrate with microwaves after the ion implantation. After the microwave irradiation, the silicon substrate is transferred to a heat-treatment apparatus, where the silicon substrate is treated with heat by being irradiated with light having a pulse width ranging from 0.1 milliseconds to 100 milliseconds, both inclusive.
摘要翻译：执行离子注入以将离子注入到硅衬底中，并且在离子注入之后进行微波照射以对微硅进行照射。在微波照射之后，将硅衬底转移到热处理装置中，其中通过用脉冲宽度为0.1毫秒至100毫秒的光照射硅衬底，其中热处理。

2. 发明授权

US08426285B2 Method of fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08426285B2
公开(公告)日：2013-04-23
申请号：US12894424
申请日：2010-09-30
申请人： Kenichi Yoshino , Kiyotaka Miyano , Tomonori Aoyama
发明人： Kenichi Yoshino , Kiyotaka Miyano , Tomonori Aoyama
IPC分类号： H01L21/336
CPC分类号： H01L29/6659 , H01L21/2686 , H01L21/324 , H01L29/7833
摘要： An ion implantation is performed to implant ions into a silicon substrate, and a microwave irradiation is performed to irradiate the silicon substrate with microwaves after the ion implantation. After the microwave irradiation, the silicon substrate is transferred to a heat-treatment apparatus, where the silicon substrate is treated with heat by being irradiated with light having a pulse width ranging from 0.1 milliseconds to 100 milliseconds, both inclusive.
摘要翻译：执行离子注入以将离子注入到硅衬底中，并且在离子注入之后进行微波照射以对微硅进行照射。在微波照射之后，将硅衬底转移到热处理装置中，其中通过用脉冲宽度为0.1毫秒至100毫秒的光照射硅衬底，其中热处理。

3. 发明授权

US08828853B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08828853B2
公开(公告)日：2014-09-09
申请号：US13415232
申请日：2012-03-08
申请人： Tomonori Aoyama , Kiyotaka Miyano
发明人： Tomonori Aoyama , Kiyotaka Miyano
IPC分类号： H01L21/20
CPC分类号： H01L29/66757 , H01L21/02532 , H01L21/02667 , H01L27/11582 , H01L29/04 , H01L29/78675 , H01L29/78696 , H01L29/7926
摘要： In one embodiment, a method of manufacturing a semiconductor device includes forming an amorphous semiconductor film on a substrate. The method further includes annealing the amorphous semiconductor film by irradiating the substrate with a microwave to form a polycrystalline semiconductor film from the amorphous semiconductor film. The method further includes forming a transistor whose channel is the polycrystalline semiconductor film.
摘要翻译：在一个实施例中，制造半导体器件的方法包括在衬底上形成非晶半导体膜。该方法还包括通过用微波照射衬底来从非晶半导体膜形成多晶半导体膜来退火非晶半导体膜。该方法还包括形成其通道为多晶半导体膜的晶体管。

4. 发明授权

US08759205B2 Semiconductor device and method for manufacturing semiconductor device 有权
标题翻译：半导体装置及半导体装置的制造方法
公开(公告)号：US08759205B2
公开(公告)日：2014-06-24
申请号：US12883463
申请日：2010-09-16
申请人： Tomonori Aoyama , Yusuke Oshiki , Kiyotaka Miyano
发明人： Tomonori Aoyama , Yusuke Oshiki , Kiyotaka Miyano
IPC分类号： H01L29/66 , H01L21/20
CPC分类号： H01L21/20 , H01L29/66
摘要： According to one embodiment, a method for manufacturing a semiconductor device, wherein an amorphous semiconductor film comprising a microcrystal is annealed using a microwave, to crystallize the amorphous semiconductor film comprising the microcrystal using the microcrystal as a nucleus.
摘要翻译：根据一个实施例，一种制造半导体器件的方法，其中使用微波对包含微晶的非晶半导体膜进行退火，以使用微晶作为核使包含微晶的非晶半导体膜结晶。

5. 发明申请

US20130075844A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130075844A1
公开(公告)日：2013-03-28
申请号：US13546379
申请日：2012-07-11
申请人： Kiyotaka Miyano , Tomonori Aoyama
发明人： Kiyotaka Miyano , Tomonori Aoyama
IPC分类号： H01L21/02 , H01L29/82
CPC分类号： H01L43/12 , H01L27/1021 , H01L27/228 , H01L27/2409 , H01L27/2481 , H01L29/868
摘要： A semiconductor device according to the present embodiment comprises a lower electrode provided above a semiconductor substrate and made of metal, an upper electrode provided above the lower electrode and made of metal, and a crystal layer provided between the lower electrode and the upper electrode. A thickness of each of the lower electrode and the upper electrode is smaller than a thickness of a skin layer deriving from a skin effect corresponding to a frequency of a microwave used to crystallize the crystal layer.
摘要翻译：根据本实施例的半导体器件包括设置在半导体衬底上并由金属制成的下电极，设置在下电极上方并由金属制成的上电极以及设置在下电极和上电极之间的晶体层。下电极和上电极的厚度小于由与用于结晶晶体结晶的微波的频率相对应的皮肤效应导出的皮肤层的厚度。

6. 发明申请

US20120025200A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120025200A1
公开(公告)日：2012-02-02
申请号：US13017498
申请日：2011-01-31
申请人： Tomonori Aoyama , Kiyotaka Miyano , Yusuke Oshiki
发明人： Tomonori Aoyama , Kiyotaka Miyano , Yusuke Oshiki
IPC分类号： H01L29/04 , H01L21/20
CPC分类号： H01L29/04 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02592 , H01L21/0262 , H01L21/02667
摘要： In one embodiment, a method for manufacturing a semiconductor device is disclosed. The method can include depositing a first amorphous film having a first impurity, depositing a third amorphous lower-layer film on the first amorphous film, forming microcrystals on the third amorphous lower-layer film, depositing a third amorphous upper-layer film on the third amorphous lower-layer film to cover the microcrystals, depositing a second amorphous film having a second impurity on the third amorphous upper-layer film, and radiating microwaves to crystallize the third amorphous lower-layer film and the third amorphous upper-layer film to form a third crystal layer, and crystallize the first amorphous film and the second amorphous film to form a first crystal layer and a second crystal layer.
摘要翻译：在一个实施例中，公开了一种用于制造半导体器件的方法。该方法可以包括沉积具有第一杂质的第一非晶膜，在第一非晶膜上沉积第三非晶下层膜，在第三非晶下层膜上形成微晶，在第三非晶下层膜上沉积第三非晶上层膜非晶下层膜覆盖微晶，在第三非晶上层膜上沉积具有第二杂质的第二非晶膜，并且辐射微波以使第三非晶下层膜和第三非晶上层膜结晶以形成第三晶体层，并且使第一非晶膜和第二非晶膜结晶以形成第一晶体层和第二晶体层。

7. 发明授权

US08383452B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08383452B2
公开(公告)日：2013-02-26
申请号：US13017498
申请日：2011-01-31
申请人： Tomonori Aoyama , Kiyotaka Miyano , Yusuke Oshiki
发明人： Tomonori Aoyama , Kiyotaka Miyano , Yusuke Oshiki
IPC分类号： H01L21/00 , H01L31/0376
CPC分类号： H01L29/04 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02592 , H01L21/0262 , H01L21/02667
摘要： In one embodiment, a method for manufacturing a semiconductor device is disclosed. The method can include depositing a first amorphous film having a first impurity, depositing a third amorphous lower-layer film on the first amorphous film, forming microcrystals on the third amorphous lower-layer film, depositing a third amorphous upper-layer film on the third amorphous lower-layer film to cover the microcrystals, depositing a second amorphous film having a second impurity on the third amorphous upper-layer film, and radiating microwaves to crystallize the third amorphous lower-layer film and the third amorphous upper-layer film to form a third crystal layer, and crystallize the first amorphous film and the second amorphous film to form a first crystal layer and a second crystal layer.
摘要翻译：在一个实施例中，公开了一种用于制造半导体器件的方法。该方法可以包括沉积具有第一杂质的第一非晶膜，在第一非晶膜上沉积第三非晶下层膜，在第三非晶下层膜上形成微晶，在第三非晶下层膜上沉积第三非晶上层膜非晶下层膜覆盖微晶，在第三非晶上层膜上沉积具有第二杂质的第二非晶膜，并且辐射微波以使第三非晶下层膜和第三非晶上层膜结晶以形成第三晶体层，并且使第一非晶膜和第二非晶膜结晶以形成第一晶体层和第二晶体层。

8. 发明申请

US20130023102A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20130023102A1
公开(公告)日：2013-01-24
申请号：US13415628
申请日：2012-03-08
申请人： Tomonori Aoyama , Kiyotaka Miyano , Hiroshi Nakazawa
发明人： Tomonori Aoyama , Kiyotaka Miyano , Hiroshi Nakazawa
IPC分类号： H01L21/336 , H01L21/20
CPC分类号： H01L21/823418 , H01L21/324 , H01L21/823431 , H01L29/665 , H01L29/6659
摘要： According to one embodiment, a method of manufacturing a semiconductor device includes forming a gate electrode on a channel region in a silicon substrate via a gate insulation film; forming a source region and a drain region in the silicon substrate so as to sandwich the channel region along a channel direction by injecting desired impurities to the silicon substrate; forming amorphous regions containing the impurities on surfaces of the source region and the drain region by amorphousizing the surfaces of the source region and the drain region; forming nickel films on the amorphous regions; and forming crystal layers containing the activated impurities and forming nickel silicide films on the crystal layers at low temperature by radiating microwaves to the amorphous regions and the nickel films.
摘要翻译：根据一个实施例，制造半导体器件的方法包括通过栅极绝缘膜在硅衬底的沟道区上形成栅电极; 在所述硅衬底中形成源极区域和漏极区域，以便通过将期望的杂质注入所述硅衬底而沿着沟道方向夹持所述沟道区域; 通过使源极区域和漏极区域的表面非晶化，在源区域和漏极区域的表面上形成含有杂质的非晶区域; 在非晶区上形成镍膜; 并且通过向非晶区域和镍膜辐射微波，形成含有活性杂质的晶体层，并在低温下在晶体层上形成硅化镍膜。

9. 发明授权

US08093141B2 Method of fabricating a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08093141B2
公开(公告)日：2012-01-10
申请号：US12878780
申请日：2010-09-09
申请人： Tomonori Aoyama , Kiyotaka Miyano
发明人： Tomonori Aoyama , Kiyotaka Miyano
IPC分类号： H01L21/00
CPC分类号： H01L21/02532 , H01L21/02667 , H01L21/324 , H01L21/823807 , H01L21/84 , H01L29/045
摘要： According to one embodiment, a method of fabricating a semiconductor device is disclosed. The method can include forming an amorphous layer on a portion of a first silicon substrate having a first plane orientation, and irradiating with micro wave on the amorphous layer to transform from the amorphous layer into a crystalline layer having the first plane orientation.
摘要翻译：根据一个实施例，公开了制造半导体器件的方法。该方法可以包括在具有第一平面取向的第一硅衬底的一部分上形成非晶层，并且在非晶层上照射微波以从非晶层转变为具有第一平面取向的晶体层。

10. 发明授权

US08658520B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08658520B2
公开(公告)日：2014-02-25
申请号：US13415628
申请日：2012-03-08
申请人： Tomonori Aoyama , Kiyotaka Miyano , Hiroshi Nakazawa
发明人： Tomonori Aoyama , Kiyotaka Miyano , Hiroshi Nakazawa
IPC分类号： H01L21/36 , H01L21/20
CPC分类号： H01L21/823418 , H01L21/324 , H01L21/823431 , H01L29/665 , H01L29/6659
摘要： According to one embodiment, a method of manufacturing a semiconductor device includes forming a gate electrode on a channel region in a silicon substrate via a gate insulation film; forming a source region and a drain region in the silicon substrate so as to sandwich the channel region along a channel direction by injecting desired impurities to the silicon substrate; forming amorphous regions containing the impurities on surfaces of the source region and the drain region by amorphousizing the surfaces of the source region and the drain region; forming nickel films on the amorphous regions; and forming crystal layers containing the activated impurities and forming nickel silicide films on the crystal layers at low temperature by radiating microwaves to the amorphous regions and the nickel films.
摘要翻译：根据一个实施例，制造半导体器件的方法包括通过栅极绝缘膜在硅衬底的沟道区上形成栅电极; 在所述硅衬底中形成源极区域和漏极区域，以便通过将期望的杂质注入所述硅衬底而沿着沟道方向夹持所述沟道区域; 通过使源极区域和漏极区域的表面非晶化，在源区域和漏极区域的表面上形成含有杂质的非晶区域; 在非晶区上形成镍膜; 并且通过向非晶区域和镍膜辐射微波，形成含有活性杂质的晶体层，并在低温下在晶体层上形成硅化镍膜。

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