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    • 3. 发明授权
    • Storage device
    • 储存设备
    • US07530005B2
    • 2009-05-05
    • US11222128
    • 2005-09-08
    • Kenichi SatoriKenichi NakanishiHideaki BandoTakahiro Fukushige
    • Kenichi SatoriKenichi NakanishiHideaki BandoTakahiro Fukushige
    • G11C29/00
    • G11B20/18G06F11/1068G11C16/28
    • The present invention has been made to realize a storage device capable of normally reading out data from the erase processing applied area. In a semiconductor storage device 1, when data read processing is performed for the erase-processing applied area in a memory section 2 to read out erase-state actual data Ddr and erase-state parity data Ddp each containing only “1s”, the erase-state actual data Ddr and erase-state parity data Ddp are inverted by a third data inverting circuit 13 to make all the values thereof “0”, followed by execution of the error detection processing. With the above configuration, it is possible to prevent an error from being detected in the error detection processing.
    • 本发明是为了实现能够从擦除处理应用区域正常地读出数据的存储装置。 在半导体存储装置1中,当对存储部分2中的擦除处理应用区域进行数据读取处理以读出仅包含“1”的擦除状态实际数据Ddr和擦除状态奇偶校验数据Ddp时,擦除 - 状态实际数据Ddr和擦除状态奇偶校验数据Ddp由第三数据反相电路13反相,使其全部值为“0”,随后执行错误检测处理。 利用上述配置,可以防止在错误检测处理中检测到错误。