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    • 1. 发明授权
    • Observing a surface using a charged particle beam
    • 使用带电粒子束观察表面
    • US4928010A
    • 1990-05-22
    • US233612
    • 1988-07-25
    • Kenichi SaitoKou WadaMasahiro Yoshizawa
    • Kenichi SaitoKou WadaMasahiro Yoshizawa
    • H01J37/28
    • H01J37/28H01J2237/281
    • An arrangement for observing a surface using a charged particle beam irradiated on the surface of a specimen and detecting secondary electrons emitted. An exciting device produces a strong magnetic field substantially perpendicular to the surface of the specimen. Secondary electrons are extracted from a bottom or side surface of a recess, such as a through hole formed in the surface of the specimen, by an interaction between the emitted secondary electrons and the strong magnetic field. A focusing lens is arranged so as to focus the charged particles at a point on the specimen, even in the presence of a strong field. Thus, a secondary electron image on the surface of the specimen can be sharply obtained to thereby observe a secondary electron image at the bottom surface or side surface of the through hole.
    • PCT No.PCT / JP87 / 00880 Sec。 371日期:1988年7月25日 102(e)日期1988年7月25日PCT提交1987年11月13日PCT公布。 出版物WO88 / 04104 日期:1988年6月2日。使用照射在试样表面上的带电粒子束观察表面的布置,检测发射的二次电子。 激励装置产生大致垂直于样品表面的强磁场。 二次电子通过发射的二次电子和强磁场之间的相互作用从凹陷的底部或侧表面提取,例如形成于样品表面的通孔。 聚焦透镜被布置成即使在存在强场的情况下也可将带电粒子聚焦在样品上的某一点。 因此,可以清楚地获得样品表面上的二次电子图像,从而在通孔的底表面或侧表面观察二次电子图像。
    • 4. 发明授权
    • Characteristic test apparatus for electronic device and method for using
the same
    • 电子装置用特征试验装置及其使用方法
    • US4851768A
    • 1989-07-25
    • US212047
    • 1988-06-24
    • Masahiro YoshizawaAkira KikuchiKou WadaMinpei FujinamiNobuo Shimazu
    • Masahiro YoshizawaAkira KikuchiKou WadaMinpei FujinamiNobuo Shimazu
    • H01L21/66G01Q30/02G01Q30/04G01Q90/00G01R31/26G01R31/302G01R31/305G01R31/3183H01J37/28
    • G01R31/305
    • In a characteristic test apparatus for an electronic device, a number of voltage supply beams are radiated onto predetermined irradiation positions of the electronic device placed on a sample table. In addition, a potential measuring beam is radiated onto a number of irradiation positions including the predetermined irradiation positions of the voltage supply beams. A secondary electron signal based on the potential measuring beam is detected to measure a potential. When the irradiation position of the potential measuring beam coincides with that of the voltage supply beam, the voltage supply beam is controlled to adjust a potential at the irradiation position to a set value by controlling, e.g., an acceleration power source for the voltage supply beam. When the irradiation position of the potential measuring beam is different from that of the voltage supply beam, a potential at this position is measured. Then, characteristics of the electronic device are calculated based on the obtained potentials at the respective irradiation positions.
    • 在用于电子设备的特征测试装置中,多个电压供应光束照射到放置在样品台上的电子设备的预定照射位置上。 此外,将潜在的测量光束照射到包括电压供应光束的预定照射位置的多个照射位置。 检测基于电位测量光束的二次电子信号来测量电位。 当电位测量光束的照射位置与电压供应光束的照射位置一致时,电压供应光束被控制以通过控制例如电压源光束的加速度电源来将照射位置处的电位调整到设定值 。 当电位测量光束的照射位置与电压供应光束的照射位置不同时,测量该位置处的电位。 然后,基于在各个照射位置处获得的电位来计算电子设备的特性。