专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08138450B2 Method for cutting workpiece 有权
标题翻译：切割工件的方法
公开(公告)号：US08138450B2
公开(公告)日：2012-03-20
申请号：US11994581
申请日：2006-07-03
申请人： Takeshi Sakamoto , Kenichi Muramatsu
发明人： Takeshi Sakamoto , Kenichi Muramatsu
IPC分类号： H01L21/78
CPC分类号： B23K26/40 , B23K26/53 , B23K2101/40 , B23K2103/50 , B28D5/0011 , H01L21/78
摘要： A method of cutting an object to be processed is provided, which can accurately cut an object to be processed comprising a substrate and a multilayer part provided on the front face of the substrate while having a plurality of functional devices into the functional devices along a line to cut in a short time even when the substrate is thick. A substrate 4 is irradiated with laser light L from the multilayer part 16 side while locating a converging point P within the substrate 4, so as to form a first modified region 71 shifted from the center position CL in the thickness direction of the substrate 4 to the rear face 21 side of the substrate 4 and a second modified region 72 shifted from the center position CL in the thickness direction of the substrate 4 to the front face 3 side of the substrate 4 within the substrate 4 along a line to cut, and generate a fracture 24 from the second modified region 72 to the front face 3 of the substrate 4. Thereafter, while in a state where an expandable tape 23 attached to the rear face 21 of the substrate 4 is expanded, a stress is generated in an object to be processed 1 such as to open the fracture 24.
摘要翻译：提供了一种切割待处理物体的方法，其可以精确地切割被加工物，其包括基板和设置在基板的正面上的多层部件，同时沿着线路具有多个功能元件进入功能元件即使在基材较厚时也能在短时间内切割。基板4从多层部16侧照射激光L，同时将会聚点P定位在基板4内，以形成从基板4的厚度方向的中心位置CL移位的第一改质区域71到基板4的背面21侧和第二改质区域72沿着切断线在基板4的基板4的基板4的基板4的前面3侧沿基板4的厚度方向从中心位置CL移位，产生从第二改质区域72到基板4的正面3的断裂线24.此后，在将基板4的背面21上附着的可扩张带23膨胀的状态下，产生应力待处理物体1如打开骨折24。

2. 发明申请

US20090008373A1 Laser Processing Method 有权
标题翻译：激光加工方法
公开(公告)号：US20090008373A1
公开(公告)日：2009-01-08
申请号：US12094209
申请日：2006-11-16
申请人： Kenichi Muramatsu , Takeshi Sakamoto
发明人： Kenichi Muramatsu , Takeshi Sakamoto
IPC分类号： B23K26/02
CPC分类号： B23K26/53 , B23K26/40 , B23K2101/40 , B23K2103/50 , B28D5/0011 , B28D5/0094 , H01L21/6838 , H01L21/78
摘要： A laser processing method which can prevent an object to be processed from being cut along a line to cut from a modified region acting as a cutting start point when separating a suction table and a holding member from each other is provided. An expandable tape 23 holding an object to be processed 1 while being stuck to a frame 51 is secured by suction onto a suction table 52 of a vacuum chuck with a porous sheet 53 interposed therebetween. Since the sheet 53 has a Young's modulus lower than that of the table 52, the tape 23 is restrained from biting into fine pores of the sheet 53. As a consequence, even when the table 52 and tape 23 are separated from each other by releasing the suction securing after forming a modified region 7, no strong bending stress acts on the object 1. This can prevent the object 1 from being cut along a line to cut from the modified region 7 acting as a cutting start point when separating the table 52 and tape 23 from each other.
摘要翻译：提供了一种激光加工方法，其可以防止在将吸力台和保持构件彼此分离时沿着用作切割起点的改质区域沿着切割线切割被处理物体。通过抽吸将保持待处理物体1的可膨胀带23通过抽吸固定到真空卡盘的吸盘52上，其间插入多孔片53。由于片材53的杨氏模量低于表52的杨氏模量，所以能够抑制带23咬入片材53的微细孔。结果，即使当桌子52和带23通过释放而彼此分离时在形成改质区域7之后的吸附固定，没有强烈的弯曲应力作用在物体1上。这样可以防止物体1从分离工作台52时作为切割起点的改质区域7切割出来和胶带23。

3. 发明申请

US20070287267A1 Laser Processing Method and Object to be Processed 有权
标题翻译：激光加工方法和待加工对象
公开(公告)号：US20070287267A1
公开(公告)日：2007-12-13
申请号：US10594892
申请日：2005-03-02
申请人： Takeshi Sakamoto , Kenichi Muramatsu
发明人： Takeshi Sakamoto , Kenichi Muramatsu
IPC分类号： H01L21/301 , B23K26/00
CPC分类号： B23K33/002 , B23K26/40 , B23K26/53 , B23K2101/36 , B23K2103/50
摘要： A laser processing method is provided, which, when cutting a substrate formed with a laminate part including a plurality of functional devices into a plurality of chips, each chip including at least one of the functional devices, can cut the laminate part with a high precision together with the substrate. In this laser processing method, modified regions differing from each other in terms of easiness to cause the substrate 4 to fracture are formed along respective lines to cut 5a to 5d. Therefore, when an expandable tape is attached to the rear face of a substrate 4 and expanded, an object to be processed 1 is cut stepwise into a plurality of chips. Such stepwise cutting allows uniform tensile stresses to act on respective parts extending along the lines to cut 5a to 5d, whereby interlayer insulating films on the lines to cut 5a to 5d are cut with a high precision together with the substrate 4.
摘要翻译：提供了一种激光加工方法，其将由具有多个功能元件的层叠部件形成的基板切割成多个芯片时，包括至少一个功能元件的芯片可以以高精度切割层叠部件与基底一起。在这种激光加工方法中，沿着各个线形成沿着各自的线形成彼此不同的改变区域，以使得基板4断裂，以切割5a至5d。因此，当将可膨胀带附接到基板4的后表面并膨胀时，被处理物体1被逐步切割成多个芯片。这种逐步切割允许均匀的拉伸应力作用于沿着切割线5a至5d延伸的相应部分，由此切割的切割线5a至5d上的层间绝缘膜与基板4一起被高精度地切割。

4. 发明授权

US09102005B2 Laser processing method 有权
标题翻译：激光加工方法
公开(公告)号：US09102005B2
公开(公告)日：2015-08-11
申请号：US12094209
申请日：2006-11-16
申请人： Kenichi Muramatsu , Takeshi Sakamoto
发明人： Kenichi Muramatsu , Takeshi Sakamoto
IPC分类号： B23K26/00 , B23K26/16 , B23K26/40 , B28D5/00 , H01L21/78 , H01L21/683
CPC分类号： B23K26/53 , B23K26/40 , B23K2101/40 , B23K2103/50 , B28D5/0011 , B28D5/0094 , H01L21/6838 , H01L21/78
摘要： A laser processing method which can prevent an object to be processed from being cut along a line to cut from a modified region acting as a cutting start point when separating a suction table and a holding member from each other is provided. An expandable tape 23 holding an object to be processed 1 while being stuck to a frame 51 is secured by suction onto a suction table 52 of a vacuum chuck with a porous sheet 53 interposed therebetween. Since the sheet 53 has a Young's modulus lower than that of the table 52, the tape 23 is restrained from biting into fine pores of the sheet 53. As a consequence, even when the table 52 and tape 23 are separated from each other by releasing the suction securing after forming a modified region 7, no strong bending stress acts on the object 1. This can prevent the object 1 from being cut along a line to cut from the modified region 7 acting as a cutting start point when separating the table 52 and tape 23 from each other.
摘要翻译：提供了一种激光加工方法，其可以防止在将吸力台和保持构件彼此分离时沿着用作切割起点的改质区域沿着切割线切割被处理物体。通过抽吸将保持待处理物体1的可膨胀带23通过抽吸固定到真空卡盘的吸盘52上，其间插入多孔片53。由于片材53的杨氏模量低于表52的杨氏模量，所以能够抑制带23咬入片材53的微细孔。结果，即使当桌子52和带23通过释放而彼此分离时在形成改质区域7之后的吸附固定，没有强烈的弯曲应力作用在物体1上。这样可以防止物体1从分离工作台52时作为切割起点的改质区域7切割出来和胶带23。

5. 发明授权

US08247311B2 Laser processing method 有权
标题翻译：激光加工方法
公开(公告)号：US08247311B2
公开(公告)日：2012-08-21
申请号：US12063560
申请日：2006-08-04
申请人： Takeshi Sakamoto , Kenichi Muramatsu
发明人： Takeshi Sakamoto , Kenichi Muramatsu
IPC分类号： H01L21/00
CPC分类号： B28D5/0011 , B23K26/40 , B23K26/53 , B23K2101/40 , B23K2103/50 , H01L2224/48091 , H01L2924/00014
摘要： A laser processing method for preventing particles from occurring from cut sections of chips obtained by cutting a silicon wafer is provided. An irradiation condition of laser light L for forming modified regions 77 to 712 is made different from an irradiation condition of laser light L for forming the modified regions 713 to 719 such as to correct the spherical aberration of laser light L in areas where the depth from the front face 3 of a silicon wafer 11 is 335 μm to 525 μm. Therefore, even when the silicon wafer 11 and a functional device layer 16 are cut into semiconductor chips from modified regions 71 to 719 acting as a cutting start point, twist hackles do not appear remarkably in the areas where the depth is 335 μm to 525 μm, whereby particles are hard to occur.
摘要翻译：提供了一种用于防止由切割硅晶片获得的切屑切割部分发生颗粒的激光加工方法。使形成改质区域77〜712的激光L的照射条件与用于形成改质区域713〜719的激光L的照射条件不同，例如将激光L的球面像差校正为硅晶片11的正面3为335μm〜525μm。因此，即使将硅晶片11和功能元件层16从作为切割起点的改质区域71〜719切割成半导体芯片，在深度为335μm〜525μm的区域中也不会显着出现扭曲，由此难以发生颗粒。

6. 发明授权

US07592237B2 Laser processing method and object to be processed 有权
标题翻译：激光加工方法和待处理对象
公开(公告)号：US07592237B2
公开(公告)日：2009-09-22
申请号：US10594892
申请日：2005-03-02
申请人： Takeshi Sakamoto , Kenichi Muramatsu
发明人： Takeshi Sakamoto , Kenichi Muramatsu
IPC分类号： H01L21/301 , H01L21/46 , H01L21/78
CPC分类号： B23K33/002 , B23K26/40 , B23K26/53 , B23K2101/36 , B23K2103/50
摘要： A laser processing method is provided, which, when cutting a substrate formed with a laminate part including a plurality of functional devices into a plurality of chips, each chip including at least one of the functional devices, can cut the laminate part with a high precision together with the substrate.In this laser processing method, modified regions differing from each other in terms of easiness to cause the substrate 4 to fracture are formed along respective lines to cut 5a to 5d. Therefore, when an expandable tape is attached to the rear face of a substrate 4 and expanded, an object to be processed 1 is cut stepwise into a plurality of chips. Such stepwise cutting allows uniform tensile stresses to act on respective parts extending along the lines to cut 5a to 5d, whereby interlayer insulating films on the lines to cut 5a to 5d are cut with a high precision together with the substrate 4.
摘要翻译：提供了一种激光加工方法，其将由具有多个功能元件的层叠部件形成的基板切割成多个芯片时，包括至少一个功能元件的芯片可以以高精度切割层叠部件与基底一起。在该激光加工方法中，沿着各条线形成切割5a〜5d，在容易引起基板4断裂的方面彼此不同的改质区域。因此，当将可膨胀带附接到基板4的后表面并膨胀时，被处理物体1被逐步切割成多个芯片。这种逐步切割允许均匀的拉伸应力作用于沿切割线5a至5d延伸的相应部分，由此切割的线5a至5d上的层间绝缘膜与基底4一起被高精度地切割。

7. 发明申请

US20090302428A1 LASER BEAM MACHINING METHOD AND SEMICONDUCTOR CHIP 有权
标题翻译：激光束加工方法和半导体芯片
公开(公告)号：US20090302428A1
公开(公告)日：2009-12-10
申请号：US12159338
申请日：2006-12-26
申请人： Takeshi Sakamoto , Kenichi Muramatsu
发明人： Takeshi Sakamoto , Kenichi Muramatsu
IPC分类号： H01L23/544 , H01L21/302
CPC分类号： H01L23/544 , B23K26/40 , B23K26/53 , B23K2101/40 , B23K2103/50 , B28D5/0011 , C03B33/0222 , H01L2924/0002 , H01L2924/00
摘要： An object to be processed 1 comprising a substrate 4 and a plurality of functional devices 15 formed on a front face 3 of the substrate 4 is irradiated with laser light L while locating a converging point P within the substrate 4, so as to form at least one row of a divided modified region 72, at least one row of a quality modified region 71 positioned between the divided modified region 72 and the front face 3 of the substrate 4, and at least one row of an HC modified region 73 positioned between the divided modified region 72 and a rear face 21 of the substrate 4 for one line to cut 5. Here, in a direction along the line to cut, a forming density of the divided modified region 72 is made lower than that of the quality modified region 71 and that of the HC modified region 73.
摘要翻译：在基板4上形成有会聚点P的基板4和形成在基板4的正面3上的多个功能元件15的被处理体1照射激光L，至少形成一排分割改质区域72，位于分割改质区域72与基材4前表面3之间的至少一排质量改质区域71，以及至少一行位于分割改质区域72和基板4的背面21一行切割5.这里，沿着切割线的方向，使分割改质区域72的形成密度低于质量改质区域的形成密度 71和改造后HC区域73。

8. 发明申请

US20090107967A1 METHOD FOR CUTTING WORKPIECE 有权
标题翻译：切割工件的方法
公开(公告)号：US20090107967A1
公开(公告)日：2009-04-30
申请号：US11994581
申请日：2006-07-03
申请人： Takeshi Sakamoto , Kenichi Muramatsu
发明人： Takeshi Sakamoto , Kenichi Muramatsu
IPC分类号： B23K31/10
CPC分类号： B23K26/40 , B23K26/53 , B23K2101/40 , B23K2103/50 , B28D5/0011 , H01L21/78
摘要： A method of cutting an object to be processed is provided, which can accurately cut an object to be processed comprising a substrate and a multilayer part provided on the front face of the substrate while having a plurality of functional devices into the functional devices along a line to cut in a short time even when the substrate is thick. A substrate 4 is irradiated with laser light L from the multilayer part 16 side while locating a converging point P within the substrate 4, so as to form a first modified region 71 shifted from the center position CL in the thickness direction of the substrate 4 to the rear face 21 side of the substrate 4 and a second modified region 72 shifted from the center position CL in the thickness direction of the substrate 4 to the front face 3 side of the substrate 4 within the substrate 4 along a line to cut, and generate a fracture 24 from the second modified region 72 to the front face 3 of the substrate 4. Thereafter, while in a state where an expandable tape 23 attached to the rear face 21 of the substrate 4 is expanded, a stress is generated in an object to be processed 1 such as to open the fracture 24.
摘要翻译：提供了一种切割待处理物体的方法，其可以精确地切割被加工物，其包括基板和设置在基板的正面上的多层部件，同时沿着线路具有多个功能元件进入功能元件即使在基材较厚时也能在短时间内切割。基板4从多层部16侧照射激光L，同时将会聚点P定位在基板4内，以形成从基板4的厚度方向的中心位置CL移位的第一改质区域71到基板4的背面21侧和第二改质区域72沿着切断线在基板4的基板4的基板4的基板4的前面3侧沿基板4的厚度方向从中心位置CL移位，产生从第二改质区域72到基板4的正面3的断裂线24.此后，在将基板4的背面21上附着的可扩张带23膨胀的状态下，产生应力待处理物体1如打开骨折24。

9. 发明授权

US08617964B2 Laser processing method 有权
标题翻译：激光加工方法
公开(公告)号：US08617964B2
公开(公告)日：2013-12-31
申请号：US13308814
申请日：2011-12-01
申请人： Takeshi Sakamoto , Kenichi Muramatsu
发明人： Takeshi Sakamoto , Kenichi Muramatsu
IPC分类号： H01L21/00
CPC分类号： B28D5/0011 , B23K26/40 , B23K26/53 , B23K2101/40 , B23K2103/50 , H01L2224/48091 , H01L2924/00014
摘要： A laser processing method for preventing particles from occurring from cut sections of chips obtained by cutting a silicon wafer is provided. An irradiation condition of laser light L for forming modified regions 77 to 712 is made different from an irradiation condition of laser light L for forming the modified regions 713 to 719 such as to correct the spherical aberration of laser light L in areas where the depth from the front face 3 of a silicon wafer 11 is 335 μm to 525 μm. Therefore, even when the silicon wafer 11 and a functional device layer 16 are cut into semiconductor chips from modified regions 71 to 719 acting as a cutting start point, twist hackles do not appear remarkably in the areas where the depth is 335 μm to 525 μm, whereby particles are hard to occur.
摘要翻译：提供了一种用于防止由切割硅晶片获得的切屑切割部分发生颗粒的激光加工方法。使形成改质区域77〜712的激光L的照射条件与用于形成改质区域713〜719的激光L的照射条件不同，例如将激光L的球面像差校正为硅晶片11的正面3为335μm〜525μm。因此，即使将硅晶片11和功能元件层16从作为切割起点的改质区域71〜719切割成半导体芯片，在深度为335μm〜525μm的区域中也不会显着出现扭曲，由此难以发生颗粒。

10. 发明授权

US08389384B2 Laser beam machining method and semiconductor chip 有权
标题翻译：激光束加工方法和半导体芯片
公开(公告)号：US08389384B2
公开(公告)日：2013-03-05
申请号：US12159338
申请日：2006-12-26
申请人： Takeshi Sakamoto , Kenichi Muramatsu
发明人： Takeshi Sakamoto , Kenichi Muramatsu
IPC分类号： H01L21/00
CPC分类号： H01L23/544 , B23K26/40 , B23K26/53 , B23K2101/40 , B23K2103/50 , B28D5/0011 , C03B33/0222 , H01L2924/0002 , H01L2924/00
摘要： An object to be processed 1 comprising a substrate 4 and a plurality of functional devices 15 formed on a front face 3 of the substrate 4 is irradiated with laser light L while locating a converging point P within the substrate 4, so as to form at least one row of a divided modified region 72, at least one row of a quality modified region 71 positioned between the divided modified region 72 and the front face 3 of the substrate 4, and at least one row of an HC modified region 73 positioned between the divided modified region 72 and a rear face 21 of the substrate 4 for one line to cut 5. Here, in a direction along the line to cut, a forming density of the divided modified region 72 is made lower than that of the quality modified region 71 and that of the HC modified region 73.
摘要翻译：在基板4上形成有会聚点P的基板4和形成在基板4的正面3上的多个功能元件15的被处理体1照射激光L，至少形成一排分割改质区域72，位于分割改质区域72与基材4前表面3之间的至少一排质量改质区域71，以及至少一行位于分割改质区域72和基板4的背面21一行切割5.这里，沿着切割线的方向，使分割改质区域72的形成密度低于质量改质区域的形成密度 71和改造后HC区域73。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式