专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07868286B2 Mounted imaging device 有权
标题翻译：安装成像装置
公开(公告)号：US07868286B2
公开(公告)日：2011-01-11
申请号：US12427332
申请日：2009-04-21
申请人： Kenichi Matsuda , Yuuichi Inaba , Shinji Yoshida , Takumi Yamaguchi
发明人： Kenichi Matsuda , Yuuichi Inaba , Shinji Yoshida , Takumi Yamaguchi
IPC分类号： H01J40/14
CPC分类号： H01L27/14621 , B60R1/00 , B60R2300/10 , B60R2300/105 , B60R2300/8033 , B60R2300/8093 , H01L31/02165 , H04N9/07
摘要： A vehicle-mounted imaging device that is mounted in an automobile and performs color imaging has been provided with a plurality of two-dimensionally arranged pixel cells. In each of the pixels, a color filter separates incident light by a multilayer interference filter. The multilayer interference filter is composed of two λ/4 multilayer films and a spacer layer sandwiched therebetween. The multilayer interference filter transmits light in a wavelength region that corresponds to an optical thickness of the spacer layer. The λ/4 multilayer films and spacer layer are composed of inorganic materials.
摘要翻译：安装在汽车中并执行彩色成像的车载成像装置已经设置有多个二维排列的像素单元。在每个像素中，滤色器通过多层干涉滤光器分离入射光。多层干涉滤光片由两个λ/ 4多层膜和夹在其间的间隔层组成。多层干涉滤光器透过与间隔层的光学厚度对应的波长范围的光。 λ/ 4多层膜和间隔层由无机材料组成。

2. 发明授权

US07560684B2 On-vehicle imaging device 有权
标题翻译：车载成像装置
公开(公告)号：US07560684B2
公开(公告)日：2009-07-14
申请号：US11795791
申请日：2006-03-07
申请人： Kenichi Matsuda , Yuuichi Inaba , Shinji Yoshida , Takumi Yamaguchi
发明人： Kenichi Matsuda , Yuuichi Inaba , Shinji Yoshida , Takumi Yamaguchi
IPC分类号： H01J40/14 , H01J5/16 , G01J3/50
CPC分类号： H01L27/14621 , B60R1/00 , B60R2300/10 , B60R2300/105 , B60R2300/8033 , B60R2300/8093 , H01L31/02165 , H04N9/07
摘要： A vehicle-mounted imaging device that is mounted in an automobile and performs color imaging has been provided with a plurality of two-dimensionally arranged pixel cells. In each of the pixels, a color filter separates incident light by a multilayer interference filter. The multilayer interference filter is composed of two λ/4 multilayer films and a spacer layer sandwiched therebetween. The multilayer interference filter transmits light in a wavelength region that corresponds to an optical thickness of the spacer layer. The λ/4 multilayer films and spacer layer are composed of inorganic materials.
摘要翻译：安装在汽车中并执行彩色成像的车载成像装置已经设置有多个二维排列的像素单元。在每个像素中，滤色器通过多层干涉滤光器分离入射光。多层干涉滤光片由两个λ/ 4多层膜和夹在其间的间隔层组成。多层干涉滤光器透过与间隔层的光学厚度对应的波长范围的光。 λ/ 4多层膜和间隔层由无机材料组成。

3. 发明申请

US20090201371A1 ON-VEHICLE IMAGING DEVICE 有权
标题翻译：车载成像装置
公开(公告)号：US20090201371A1
公开(公告)日：2009-08-13
申请号：US12427332
申请日：2009-04-21
申请人： Kenichi MATSUDA , Yuuichi Inaba , Shinji Yoshida , Takumi Yamaguchi
发明人： Kenichi MATSUDA , Yuuichi Inaba , Shinji Yoshida , Takumi Yamaguchi
IPC分类号： H04N7/18
CPC分类号： H01L27/14621 , B60R1/00 , B60R2300/10 , B60R2300/105 , B60R2300/8033 , B60R2300/8093 , H01L31/02165 , H04N9/07
摘要： A vehicle-mounted imaging device that is mounted in an automobile and performs color imaging has been provided with a plurality of two-dimensionally arranged pixel cells. In each of the pixels, a color filter separates incident light by a multilayer interference filter. The multilayer interference filter is composed of two λ/4 multilayer films and a spacer layer sandwiched therebetween. The multilayer interference filter transmits light in a wavelength region that corresponds to an optical thickness of the spacer layer. The λ/4 multilayer films and spacer layer are composed of inorganic materials.
摘要翻译：安装在汽车中并执行彩色成像的车载成像装置已经设置有多个二维排列的像素单元。在每个像素中，滤色器通过多层干涉滤光器分离入射光。多层干涉滤光片由两个λ/ 4多层膜和夹在其间的间隔层组成。多层干涉滤光器透过与间隔层的光学厚度对应的波长范围的光。 λ/ 4多层膜和间隔层由无机材料组成。

4. 发明授权

US07759679B2 Solid-state imaging device, manufacturing method of solid-state imaging device, and camera employing same 有权
标题翻译：固态成像装置，固态成像装置的制造方法以及使用该装置的相机
公开(公告)号：US07759679B2
公开(公告)日：2010-07-20
申请号：US10536962
申请日：2004-09-13
申请人： Yuuichi Inaba , Masahiro Kasano , Shinji Yoshida , Takumi Yamaguchi
发明人： Yuuichi Inaba , Masahiro Kasano , Shinji Yoshida , Takumi Yamaguchi
IPC分类号： H01L29/10
CPC分类号： H01L27/14685 , G02B5/201 , G02B5/285 , H01L27/14621 , H04N5/2254
摘要： A solid-state imaging device includes a color filter that selectively transmits incoming light. The color filter includes two λ/4 multilayer films, and an insulation layer sandwiched between the two λ/4 multilayer films. Here, each of the λ/4 multilayer films is constituted by a plurality of dielectric layers, and the optical thickness of the insulation layer is not λ/4. Since this color filter has a smaller thickness, the solid-state imaging device has a smaller size.
摘要翻译：固态成像装置包括选择性地传输入射光的滤色器。滤色器包括两个λ/ 4多层膜和夹在两个λ/ 4多层膜之间的绝缘层。这里，λ/ 4多层膜由多个电介质层构成，绝缘层的光学厚度不为λ/ 4。由于该滤色器具有较小的厚度，所以固态成像装置具有较小的尺寸。

5. 发明申请

US20060205107A1 Solid-state imaging device, manufacturing method of solid-state imaging device, and camera employing same 有权
标题翻译：固态成像装置，固态成像装置的制造方法以及使用该装置的相机
公开(公告)号：US20060205107A1
公开(公告)日：2006-09-14
申请号：US10536962
申请日：2004-09-13
申请人： Yuuichi Inaba , Masahiro Kasano , Shinji Yoshida , Takumi Yamaguchi
发明人： Yuuichi Inaba , Masahiro Kasano , Shinji Yoshida , Takumi Yamaguchi
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L27/14685 , G02B5/201 , G02B5/285 , H01L27/14621 , H04N5/2254
摘要： A solid-state imaging device includes a color filter that selectively transmits incoming light. The color filter includes two λ/4 multilayer films, and an insulation layer sandwiched between the two λ/4 multilayer films. Here, each of the λ/4 multilayer films is constituted by a plurality of dielectric layers, and the optical thickness of the insulation layer is not λ/4. Since this color filter has a smaller thickness, the solid-state imaging device has a smaller size.
摘要翻译：固态成像装置包括选择性地传输入射光的滤色器。滤色器包括两个λ/ 4多层膜和夹在两个λ/ 4多层膜之间的绝缘层。这里，每个λ/ 4多层膜由多个电介质层构成，绝缘层的光学厚度不是λ/ 4。由于该滤色器具有较小的厚度，所以固态成像装置具有较小的尺寸。

6. 发明申请

US20080135740A1 On-Vehicle Imaging Device 有权
标题翻译：车载成像装置
公开(公告)号：US20080135740A1
公开(公告)日：2008-06-12
申请号：US11795791
申请日：2006-03-07
申请人： Kenichi Matsuda , Inaba Yuuichi , Shinji Yoshida , Takumi Yamaguchi
发明人： Kenichi Matsuda , Inaba Yuuichi , Shinji Yoshida , Takumi Yamaguchi
IPC分类号： B60R1/10 , G01J3/50
CPC分类号： H01L27/14621 , B60R1/00 , B60R2300/10 , B60R2300/105 , B60R2300/8033 , B60R2300/8093 , H01L31/02165 , H04N9/07
摘要： A vehicle-mounted imaging device that is mounted in an automobile and performs color imaging has been provided with a plurality of two-dimensionally arranged pixel cells. In each of the pixels, a color filter separates incident light by a multilayer interference filter. The multilayer interference filter is composed of two λ/4 multilayer films and a spacer layer sandwiched therebetween. The multilayer interference filter transmits light in a wavelength region that corresponds to an optical thickness of the spacer layer. The λ/4 multilayer films and spacer layer are composed of inorganic materials.
摘要翻译：安装在汽车中并执行彩色成像的车载成像装置已经设置有多个二维排列的像素单元。在每个像素中，滤色器通过多层干涉滤光器分离入射光。多层干涉滤光片由两个λ/ 4多层膜和夹在其间的间隔层组成。多层干涉滤光器透过与间隔层的光学厚度对应的波长范围的光。 λ/ 4多层膜和间隔层由无机材料组成。

7. 发明授权

US07332717B2 Infrared sensor and infrared sensor array 有权
标题翻译：红外传感器和红外传感器阵列
公开(公告)号：US07332717B2
公开(公告)日：2008-02-19
申请号：US10580534
申请日：2005-09-15
申请人： Takahiko Murata , Takumi Yamaguchi , Shigetaka Kasuga , Shinji Yoshida , Yoshito Ikeda
发明人： Takahiko Murata , Takumi Yamaguchi , Shigetaka Kasuga , Shinji Yoshida , Yoshito Ikeda
IPC分类号： G01J5/00
CPC分类号： G01J5/24 , G01J1/46 , H04N5/33
摘要： An infrared sensor includes a series capacitor element and a reference capacitor element each exhibiting a predetermined capacitance value; an infrared-detecting capacitor element whose capacitance value varies depending on an intensity of infrared light incident on the element; and an output node being a node at which a first terminal of the series capacitor element, a first terminal of the reference capacitor element and a first terminal of the infrared-detecting capacitor element are connected to one another. The intensity of infrared light is output as a potential difference between the reference potential which is brought to a potential by applying a predetermined voltage between the series capacitor element and the reference capacitor element and the detection potential which is brought to a potential by applying a predetermined voltage between the series capacitor element and the infrared-detecting capacitor element.
摘要翻译：红外线传感器包括串联电容器元件和参考电容器元件，每个都具有预定的电容值; 其电容值根据入射到元件上的红外光的强度而变化的红外线检测电容器元件; 并且输出节点是串联电容器元件的第一端子，参考电容器元件的第一端子和红外线检测电容器元件的第一端子彼此连接的节点。红外光的强度通过在串联电容器元件和参考电容器元件之间施加预定电压而被引入到电位的参考电位之间的电位差和通过施加预定的串联电容器元件和红外线检测电容器元件之间的电压。

8. 发明授权

US07199411B2 Solid-state imaging device and camera 有权
标题翻译：固态成像装置和相机
公开(公告)号：US07199411B2
公开(公告)日：2007-04-03
申请号：US10930814
申请日：2004-09-01
申请人： Shinji Yoshida , Mitsuyoshi Mori , Takumi Yamaguchi
发明人： Shinji Yoshida , Mitsuyoshi Mori , Takumi Yamaguchi
IPC分类号： H01L31/062
CPC分类号： H01L27/14601 , H01L27/14609 , H01L27/1463
摘要： A solid-state imaging device is formed on a silicon substrate for providing a MOS type solid-state imaging device which has a device isolation structure and causes a small amount of leak current. The solid-state imaging device includes, for each pixel, an imaging region which includes a photodiode having a charge accumulation region of a first conductivity type, a transistor and a device isolation region whose depth is less than a depth of the charge accumulation region of the first conductivity type, at which an impurity density is at maximum.
摘要翻译：在硅基板上形成固态成像装置，用于提供具有器件隔离结构并导致少量泄漏电流的MOS型固态成像器件。固态成像装置包括：对于每个像素，成像区域包括具有第一导电类型的电荷累积区域的光电二极管，晶体管和器件隔离区域，其深度小于电荷累积区域的深度杂质密度最大的第一导电类型。

9. 发明申请

US20070020795A1 Solid-state imaging device and its manufacturing method 审中-公开
标题翻译：固态成像装置及其制造方法
公开(公告)号：US20070020795A1
公开(公告)日：2007-01-25
申请号：US10568961
申请日：2005-01-07
申请人： Mitsuyoshi Mori , Takumi Yamaguchi , Shinji Yoshida
发明人： Mitsuyoshi Mori , Takumi Yamaguchi , Shinji Yoshida
IPC分类号： H01L21/00
CPC分类号： H01L27/1463 , H01L21/76205 , H01L27/14689
摘要： In a method for manufacturing a solid-state imaging device of the present invention, a pad insulting film 2 made of an oxide film and an anti-oxidizing film 3 made of a nitride film are deposited on a n-type semiconductor substrate 1. Then, an opening 4 is formed to expose an element isolation formation region of the semiconductor substrate 1. Next, an anti-oxidizing film (not shown) for burying the opening 4 is formed on the substrate and anisotropic etching is performed to form a sidewall 5. Subsequently, a trench 6 is formed using the anti-oxidizing film 3 and the sidewall 5 as a mask. Then, a p-type impurity is implanted into a part of the semiconductor substrate 1 which is exposed at the side face of the trench 6 and a thermal oxide film is formed in the surface portion of the trench 6 in the semiconductor substrate 1. Thereafter, the trench 6 is buried with a burying film 8.
摘要翻译：在本发明的固体摄像装置的制造方法中，在n型半导体基板1上沉积由氧化膜构成的焊盘绝缘膜2和由氮化物膜构成的抗氧化膜3。然后，形成开口4以露出半导体衬底1的元件隔离形成区域。接下来，在基板上形成用于埋入开口4的抗氧化膜（未示出），并执行各向异性蚀刻以形成侧壁5。随后，使用抗氧化膜3和侧壁5作为掩模形成沟槽6。然后，将p型杂质注入到在沟槽6的侧面露出的半导体衬底1的一部分中，并且在半导体衬底1中的沟槽6的表面部分中形成热氧化膜。此后，沟槽6被埋入掩埋膜8。

10. 发明申请

US20070012968A1 Solid-state imaging device and camera 审中-公开
公开(公告)号：US20070012968A1
公开(公告)日：2007-01-18
申请号：US11523578
申请日：2006-09-20
申请人： Shinji Yoshida , Mitsuyoshi Mori , Takumi Yamaguchi
发明人： Shinji Yoshida , Mitsuyoshi Mori , Takumi Yamaguchi
IPC分类号： H01L31/113
CPC分类号： H01L27/14601 , H01L27/14609 , H01L27/1463
摘要： A solid-state imaging device is formed on a silicon substrate for providing a MOS type solid-state imaging device which has a device isolation structure and causes a small amount of leak current. The solid-state imaging device includes, for each pixel, an imaging region which includes a photodiode having a charge accumulation region of a first conductivity type, a transistor and a device isolation region whose depth is less than a depth of the charge accumulation region of the first conductivity type, at which an impurity density is at maximum.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式