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1. 发明授权

US07295030B2 Thin film transistor tester and corresponding test method 失效
标题翻译：薄膜晶体管测试仪及相应的测试方法
公开(公告)号：US07295030B2
公开(公告)日：2007-11-13
申请号：US11163996
申请日：2005-11-07
申请人： Kenichi Imura , Daiju Nakano , Yoshitami Sakaguchi
发明人： Kenichi Imura , Daiju Nakano , Yoshitami Sakaguchi
IPC分类号： G01R31/26
CPC分类号： G09G3/006
摘要： To test electrical characteristics of a Thin Film Transistor (TFT) with a source or drain terminal left open and exposed, using a non-contact current source and protecting the TFTs from adverse effects, such as contamination, destruction, and the like. A tester 100 is provided to test a TFT array substrate 14, the tester including ion flow supply devices 16 and 18 for supplying an ion flow onto the surface of a substrate 14. Thereon, an array 12 of TFTs is formed, each TFT being connected to an electrode having a source or a drain left open and exposed; a control circuit 24 for supplying an operating voltage to a gate electrode of the TFT to be tested in the array; and a measurement circuit 24 for measuring an operating current via the testing TFT source or drain that remain in a non open state.
摘要翻译：为了测试具有源极或漏极端子的薄膜晶体管（TFT）的电气特性，其开放并暴露，使用非接触电流源并保护TFT免受诸如污染，破坏等的不利影响。提供测试器100以测试TFT阵列基板14，该测试仪包括用于将离子流提供到基板14的表面上的离子流供应装置16和18。其中，形成TFT的阵列12，每个TFT连接到具有源极或漏极的电极的左侧敞开并暴露; 控制电路24，用于向阵列中要测试的TFT的栅电极提供工作电压; 以及测量电路24，用于测量保持在非打开状态的测试TFT源极或漏极的工作电流。

2. 发明申请

US20060097745A1 THIN FILM TRANSISTOR TESTER AND CORRESPONDING TEST METHOD 失效
标题翻译：薄膜晶体管测试仪和相应的测试方法
公开(公告)号：US20060097745A1
公开(公告)日：2006-05-11
申请号：US11163996
申请日：2005-11-07
申请人： Kenichi Imura , Daiju Nakano , Yoshitami Sakaguchi
发明人： Kenichi Imura , Daiju Nakano , Yoshitami Sakaguchi
IPC分类号： G01R31/00
CPC分类号： G09G3/006
摘要： To test electrical characteristics of a Thin Film Transistor (TFT) with a source or drain terminal left open and exposed, using a non-contact current source and protecting the TFTs from adverse effects, such as contamination, destruction, and the like. A tester 100 is provided to test a TFT array substrate 14, the tester including ion flow supply devices 16 and 18 for supplying an ion flow onto the surface of a substrate 14. Thereon, an array 12 of TFTs is formed, each TFT being connected to an electrode having a source or a drain left open and exposed; a control circuit 24 for supplying an operating voltage to a gate electrode of the TFT to be tested in the array; and a measurement circuit 24 for measuring an operating current via the testing TFT source or drain that remain in a non open state.
摘要翻译：为了测试具有源极或漏极端子的薄膜晶体管（TFT）的电气特性，其开放并暴露，使用非接触电流源并保护TFT免受诸如污染，破坏等的不利影响。提供测试器100以测试TFT阵列基板14，该测试仪包括用于将离子流提供到基板14的表面上的离子流供应装置16和18。其中，形成TFT的阵列12，每个TFT连接到具有源极或漏极的电极的左侧敞开并暴露; 控制电路24，用于向阵列中要测试的TFT的栅电极提供工作电压; 以及测量电路24，用于测量保持在非打开状态的测试TFT源极或漏极的工作电流。

3. 发明授权

US07106089B2 Inspection device and inspection method for active matrix panel, and manufacturing method for active matrix organic light emitting diode panel 失效
标题翻译：有源矩阵面板的检查装置和检查方法，以及有源矩阵有机发光二极管面板的制造方法
公开(公告)号：US07106089B2
公开(公告)日：2006-09-12
申请号：US10848318
申请日：2004-05-18
申请人： Daiju Nakano , Yoshitami Sakaguchi
发明人： Daiju Nakano , Yoshitami Sakaguchi
IPC分类号： G01R31/00
CPC分类号： G09G3/006 , G09G3/3225 , G09G2300/0842 , G09G2330/10
摘要： An inspection method includes an array process of forming a TFT array on a substrate to fabricate an active matrix panel, an inspection process of carrying out a performance test on the fabricated active matrix panel, and a cell process of mounting an OLED on the active matrix panel after the inspection process. In the inspection process, variation in parasitic capacitance through a pixel electrode is measured when driving TFTs constituting the active matrix fabricated in the array process are turned on and when the driving TFTs are turned off, and open/short defects in the driving TFTs are thereby inspected.
摘要翻译：检查方法包括在基板上形成TFT阵列以制造有源矩阵面板的阵列处理，对制造的有源矩阵面板执行性能测试的检查过程以及将OLED安装在有源矩阵上的单元工艺检查过程后面板。在检查过程中，当构成阵列处理中制造的有源矩阵的TFT被驱动并且当驱动TFT被截止时，测量驱动TFT中的开/短缺陷时，通过像素电极的寄生电容的变化，检查。

4. 发明授权

US08228269B2 Inspection device and inspection method for active matrix panel, and manufacturing method for active matrix organic light emitting diode panel 失效
标题翻译：有源矩阵面板的检查装置和检查方法，以及有源矩阵有机发光二极管面板的制造方法
公开(公告)号：US08228269B2
公开(公告)日：2012-07-24
申请号：US11927291
申请日：2007-10-29
申请人： Daiju Nakano , Yoshitami Sakaguchi
发明人： Daiju Nakano , Yoshitami Sakaguchi
IPC分类号： G09G3/30
CPC分类号： G09G3/006 , G09G3/3225 , G09G2300/0842 , G09G2330/10
摘要： An inspection method includes an array process of forming a TFT array on a substrate to fabricate an active matrix panel, an inspection process of carrying out a performance test on the fabricated active matrix panel, and a cell process of mounting an OLED on the active matrix panel after the inspection process. In the inspection process, variation in parasitic capacitance through a pixel electrode is measured when driving TFTs constituting the active matrix fabricated in the array process are turned on and when the driving TFTs are turned off, and open/short defects in the driving TFTs are thereby inspected.
摘要翻译：检查方法包括在基板上形成TFT阵列以制造有源矩阵面板的阵列处理，对制造的有源矩阵面板执行性能测试的检查过程以及将OLED安装在有源矩阵上的单元工艺检查过程后面板。在检查过程中，当构成阵列处理中制造的有源矩阵的TFT被驱动并且当驱动TFT被截止时，测量驱动TFT中的开/短缺陷时，通过像素电极的寄生电容的变化，检查。

5. 发明授权

US07486100B2 Active matrix panel inspection device and inspection method 有权
标题翻译：有源矩阵面板检测装置及检验方法
公开(公告)号：US07486100B2
公开(公告)日：2009-02-03
申请号：US10556497
申请日：2004-04-28
申请人： Yoshitami Sakaguchi , Daiju Nakano
发明人： Yoshitami Sakaguchi , Daiju Nakano
IPC分类号： G01R31/00
CPC分类号： G09G3/006 , G09G3/3225 , G09G3/3233 , G09G3/3291 , G09G2300/0819 , G09G2300/0852 , H01L27/12 , H01L27/1214 , H01L27/3244
摘要： An inspection method includes an array process of forming a TFT array on a substrate to fabricate an active matrix panel, an inspection process of carrying out performance inspection of the fabricated active matrix panel, and a cell process of mounting an OLED on the active matrix panel judged as non-defective in the inspection process. In the inspection process, a counter electrode is disposed in the vicinity of a plane, where an OLED connection electrode is exposed, of the active matrix panel fabricated in the array process so as to observe an electric current flowing on a pixel subject to measurement which constitutes the active matrix panel.
摘要翻译：检查方法包括在基板上形成TFT阵列以制造有源矩阵面板的阵列处理，对所制造的有源矩阵面板进行性能检查的检查过程以及将OLED安装在有源矩阵面板上的单元工艺在检查过程中判断为无缺陷。在检查过程中，在阵列处理中制造的有源矩阵面板中，在暴露了OLED连接电极的平面附近设置对电极，以观察流过测量像素的电流，构成有源矩阵面板。

6. 发明授权

US07317326B2 Inspection device and inspection method for active matrix panel, and manufacturing method for active matrix organic light emitting diode panel 失效
标题翻译：有源矩阵面板的检查装置和检查方法，以及有源矩阵有机发光二极管面板的制造方法
公开(公告)号：US07317326B2
公开(公告)日：2008-01-08
申请号：US11515985
申请日：2006-09-05
申请人： Daiju Nakano , Yoshitami Sakaguchi
发明人： Daiju Nakano , Yoshitami Sakaguchi
IPC分类号： G01R31/00
CPC分类号： G09G3/006 , G09G3/3225 , G09G2300/0842 , G09G2330/10
摘要： An inspection method includes an array process of forming a TFT array on a substrate to fabricate an active matrix panel, an inspection process of carrying out a performance test on the fabricated active matrix panel, and a cell process of mounting an OLED on the active matrix panel after the inspection process. In the inspection process, variation in parasitic capacitance through a pixel electrode is measured when driving TFTs constituting the active matrix fabricated in the array process are turned on and when the driving TFTs are turned off, and open/short defects in the driving TFTs are thereby inspected.
摘要翻译：检查方法包括在基板上形成TFT阵列以制造有源矩阵面板的阵列处理，对制造的有源矩阵面板执行性能测试的检查过程以及将OLED安装在有源矩阵上的单元工艺检查过程后面板。在检查过程中，当构成阵列处理中制造的有源矩阵的TFT被驱动并且当驱动TFT被截止时，测量驱动TFT中的开/短缺陷时，通过像素电极的寄生电容的变化，检查。

7. 发明申请

US20070040548A1 Active matrix panel inspection device, inspection method, and active matrix oled panel manufacturing method 有权
标题翻译：有源矩阵面板检测装置，检测方法和有源矩阵面板制造方法
公开(公告)号：US20070040548A1
公开(公告)日：2007-02-22
申请号：US10556497
申请日：2004-04-28
申请人： Yoshitami Sakaguchi , Daiju Nakano
发明人： Yoshitami Sakaguchi , Daiju Nakano
IPC分类号： G01R31/28
CPC分类号： G09G3/006 , G09G3/3225 , G09G3/3233 , G09G3/3291 , G09G2300/0819 , G09G2300/0852 , H01L27/12 , H01L27/1214 , H01L27/3244
摘要： An inspection method includes an array process of forming a TFT array on a substrate to fabricate an active matrix panel, an inspection process of carrying out performance inspection of the fabricated active matrix panel, and a cell process of mounting an OLED on the active matrix panel judged as non-defective in the inspection process. In the inspection process, a counter electrode is disposed in the vicinity of a plane, where an OLED connection electrode is exposed, of the active matrix panel fabricated in the array process so as to observe an electric current flowing on a pixel subject to measurement which constitutes the active matrix panel.
摘要翻译：检查方法包括在基板上形成TFT阵列以制造有源矩阵面板的阵列处理，对所制造的有源矩阵面板进行性能检查的检查过程以及将OLED安装在有源矩阵面板上的单元工艺在检查过程中判断为无缺陷。在检查过程中，在阵列处理中制造的有源矩阵面板中，在暴露了OLED连接电极的平面附近设置对电极，以观察流过测量像素的电流，构成有源矩阵面板。

8. 发明申请

US20050067943A1 Thin film transistor array, display panel, method for inspecting the thin film transistor array, and method for manufacturing active matrix organic light emitting diode panel 有权
标题翻译：薄膜晶体管阵列，显示面板，薄膜晶体管阵列的检查方法以及有源矩阵有机发光二极管面板的制造方法
公开(公告)号：US20050067943A1
公开(公告)日：2005-03-31
申请号：US10952302
申请日：2004-09-28
申请人： Yoshitami Sakaguchi , Daiju Nakano
发明人： Yoshitami Sakaguchi , Daiju Nakano
IPC分类号： H05B33/10 , G09F9/00 , G09F9/30 , G09G3/00 , G09G3/20 , G09G3/30 , G09G3/32 , H01L27/12 , H01L27/32 , H01L51/50 , H05B33/14 , H01J63/04 , H01J1/62
CPC分类号： G09G3/006 , G09G3/3208 , H01L27/12
摘要： A thin film transistor (TFT) array comprises: a drive TFT for driving an organic light emitting diode (OLED), which is an electroluminescence (EL) device; first common wiring disposed for performing a current source or a current sink for the OLED; second common wiring disposed for performing a current source or a current sink for the OLED, the second common wiring being connected alternately with the first common wiring for each horizontal line and each vertical column of a pixel; and a switching TFT, which is a connection switch for connecting either one of the first common wiring and the second common wiring to a pixel electrode.
摘要翻译：薄膜晶体管（TFT）阵列包括：用于驱动作为电致发光（EL）器件的有机发光二极管（OLED）的驱动TFT; 布置用于执行OLED的电流源或电流吸收器的第一公共布线; 第二公共布线被设置用于执行OLED的电流源或电流吸收器，第二公共布线与用于每个水平线和像素的每个垂直列的第一公共布线交替连接; 以及开关TFT，其是用于将第一公共布线和第二公共布线中的任一个连接到像素电极的连接开关。

9. 发明申请

US20070075727A1 Inspection device and inspection method for active matrix panel, and manufacturing method for active matrix organic light emitting diode panel 失效
标题翻译：有源矩阵面板的检查装置和检查方法，以及有源矩阵有机发光二极管面板的制造方法
公开(公告)号：US20070075727A1
公开(公告)日：2007-04-05
申请号：US11515985
申请日：2006-09-05
申请人： Daiju Nakano , Yoshitami Sakaguchi
发明人： Daiju Nakano , Yoshitami Sakaguchi
IPC分类号： G01R31/00
CPC分类号： G09G3/006 , G09G3/3225 , G09G2300/0842 , G09G2330/10
摘要： An inspection method includes an array process of forming a TFT array on a substrate to fabricate an active matrix panel, an inspection process of carrying out a performance test on the fabricated active matrix panel, and a cell process of mounting an OLED on the active matrix panel after the inspection process. In the inspection process, variation in parasitic capacitance through a pixel electrode is measured when driving TFTs constituting the active matrix fabricated in the array process are turned on and when the driving TFTs are turned off, and open/short defects in the driving TFTs are thereby inspected.
摘要翻译：检查方法包括在基板上形成TFT阵列以制造有源矩阵面板的阵列处理，对制造的有源矩阵面板执行性能测试的检查过程以及将OLED安装在有源矩阵上的单元工艺检查过程后面板。在检查过程中，当构成阵列处理中制造的有源矩阵的TFT被驱动并且当驱动TFT被截止时，测量驱动TFT中的开/短缺陷时，通过像素电极的寄生电容的变化，检查。

10. 发明授权

US07091667B2 Thin film transistor array, display panel, method for inspecting the thin film transistor array, and method for manufacturing active matrix organic light emitting diode panel 有权
标题翻译：薄膜晶体管阵列，显示面板，薄膜晶体管阵列的检查方法以及有源矩阵有机发光二极管面板的制造方法
公开(公告)号：US07091667B2
公开(公告)日：2006-08-15
申请号：US10952302
申请日：2004-09-28
申请人： Yoshitami Sakaguchi , Daiju Nakano
发明人： Yoshitami Sakaguchi , Daiju Nakano
IPC分类号： G09G3/10
CPC分类号： G09G3/006 , G09G3/3208 , H01L27/12
摘要： A thin film transistor (TFT) array comprises: a drive TFT for driving an organic light emitting diode (OLED), which is an electroluminescence (EL) device; first common wiring disposed for performing a current source or a current sink for the OLED; second common wiring disposed for performing a current source or a current sink for the OLED, the second common wiring being connected alternately with the first common wiring for each horizontal line and each vertical column of a pixel; and a switching TFT, which is a connection switch for connecting either one of the first common wiring and the second common wiring to a pixel electrode.
摘要翻译：薄膜晶体管（TFT）阵列包括：用于驱动作为电致发光（EL）器件的有机发光二极管（OLED）的驱动TFT; 布置用于执行OLED的电流源或电流吸收器的第一公共布线; 第二公共布线被设置用于执行OLED的电流源或电流吸收器，第二公共布线与用于每个水平线和像素的每个垂直列的第一公共布线交替连接; 以及开关TFT，其是用于将第一公共布线和第二公共布线中的任一个连接到像素电极的连接开关。

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