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1. 发明申请

US20060091397A1 Display device and method for manufacturing the same 审中-公开
标题翻译：显示装置及其制造方法
公开(公告)号：US20060091397A1
公开(公告)日：2006-05-04
申请号：US11253738
申请日：2005-10-20
申请人： Kengo Akimoto , Hotaka Maruyama , Norihito Sone , Hisao Ikeda , Junichiro Sakata , Satoshi Seo
发明人： Kengo Akimoto , Hotaka Maruyama , Norihito Sone , Hisao Ikeda , Junichiro Sakata , Satoshi Seo
IPC分类号： H01L29/04
CPC分类号： H01L27/124 , H01L27/3244 , H01L27/3258 , H01L51/5052 , H01L51/5218 , H01L2251/5315
摘要： It is an object of the invention to manufacture a highly reliable display device at a low cost with high yield. A display device of the invention includes: a first reflective electrode layer; and a second transparent electrode layer with an electroluminescent layer interposed therebetween, wherein the electroluminescent layer has a layer containing an organic compound and an inorganic compound, and the first electrode layer contains an aluminum alloy containing at least one or more selected from the group consisting of molybdenum, titanium, and carbon.
摘要翻译：本发明的目的是以低成本，高产率制造高可靠性的显示装置。本发明的显示装置包括：第一反射电极层; 以及其间插入有电致发光层的第二透明电极层，其中，所述电致发光层具有含有有机化合物和无机化合物的层，所述第一电极层含有含有选自以下的至少一种以上的铝合金：钼，钛和碳。

2. 发明申请

US20100124796A1 LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE 有权
标题翻译：发光装置及制造发光装置的方法
公开(公告)号：US20100124796A1
公开(公告)日：2010-05-20
申请号：US12693818
申请日：2010-01-26
申请人： Shunpei Yamazaki , Kengo Akimoto , Junichiro Sakata , Yoshiharu Hirakata , Norihito Sone
发明人： Shunpei Yamazaki , Kengo Akimoto , Junichiro Sakata , Yoshiharu Hirakata , Norihito Sone
IPC分类号： H01L21/28
CPC分类号： H01L27/3244 , H01L27/322 , H01L27/3276 , H01L51/5048 , H01L51/5088 , H01L51/5092 , H01L51/52 , H01L51/5206 , H01L51/5215 , H01L51/5218 , H01L51/5234 , H01L51/5237 , H01L51/5246 , H01L51/5253 , H01L51/5259 , H01L51/56
摘要： Techniques are provided for manufacturing a light-emitting device having high internal quantum efficiency, consuming less power, having high luminance, and having high reliability. The techniques include forming a conductive light-transmitting oxide layer comprising a conductive light-transmitting oxide material and silicon oxide, forming a barrier layer in which density of the silicon oxide is higher than that in the conductive light-transmitting oxide layer over the conductive light-transmitting oxide layer, forming an anode having the conductive light-transmitting oxide layer and the barrier layer, heating the anode under a vacuum atmosphere, forming an electroluminescent layer over the heated anode, and forming a cathode over the electroluminescent layer. According to the techniques, the barrier layer is formed between the electroluminescent layer and the conductive light-transmitting oxide layer.
摘要翻译：提供了用于制造具有高内部量子效率，消耗较少功率，具有高亮度并且具有高可靠性的发光装置的技术。这些技术包括形成包含导电透光氧化物材料和氧化硅的导电透光氧化物层，形成阻挡层，其中氧化硅的密度高于导电光上的导电透光氧化物层的密度形成具有导电透光性氧化物层和阻挡层的阳极，在真空气氛下加热阳极，在加热阳极上形成电致发光层，在电致发光层上形成阴极。根据该技术，在电致发光层和导电透光性氧化物层之间形成阻挡层。

3. 发明授权

US08759131B2 Light-emitting device and method for manufacturing light-emitting device 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US08759131B2
公开(公告)日：2014-06-24
申请号：US12693818
申请日：2010-01-26
申请人： Shunpei Yamazaki , Kengo Akimoto , Junichiro Sakata , Yoshiharu Hirakata , Norihito Sone
发明人： Shunpei Yamazaki , Kengo Akimoto , Junichiro Sakata , Yoshiharu Hirakata , Norihito Sone
IPC分类号： H01L21/28
CPC分类号： H01L27/3244 , H01L27/322 , H01L27/3276 , H01L51/5048 , H01L51/5088 , H01L51/5092 , H01L51/52 , H01L51/5206 , H01L51/5215 , H01L51/5218 , H01L51/5234 , H01L51/5237 , H01L51/5246 , H01L51/5253 , H01L51/5259 , H01L51/56
摘要： Techniques are provided for manufacturing a light-emitting device having high internal quantum efficiency, consuming less power, having high luminance, and having high reliability. The techniques include forming a conductive light-transmitting oxide layer comprising a conductive light-transmitting oxide material and silicon oxide, forming a barrier layer in which density of the silicon oxide is higher than that in the conductive light-transmitting oxide layer over the conductive light-transmitting oxide layer, forming an anode having the conductive light-transmitting oxide layer and the barrier layer, heating the anode under a vacuum atmosphere, forming an electroluminescent layer over the heated anode, and forming a cathode over the electroluminescent layer. According to the techniques, the barrier layer is formed between the electroluminescent layer and the conductive light-transmitting oxide layer.
摘要翻译：提供了用于制造具有高内部量子效率，消耗较少功率，具有高亮度并且具有高可靠性的发光装置的技术。这些技术包括形成包含导电透光氧化物材料和氧化硅的导电透光氧化物层，形成阻挡层，其中氧化硅的密度高于导电光上的导电透光氧化物层的密度形成具有导电透光性氧化物层和阻挡层的阳极，在真空气氛下加热阳极，在加热阳极上形成电致发光层，在电致发光层上形成阴极。根据该技术，在电致发光层和导电透光性氧化物层之间形成阻挡层。

4. 发明申请

US20070164671A1 Light-Emitting Device and Method for Manufacturing Light-Emitting Device 有权
标题翻译：发光装置及发光装置的制造方法
公开(公告)号：US20070164671A1
公开(公告)日：2007-07-19
申请号：US11687204
申请日：2007-03-16
申请人： Shunpei Yamazaki , Kengo Akimoto , Junichiro Sakata , Yoshiharu Hirakata , Norihito Sone
发明人： Shunpei Yamazaki , Kengo Akimoto , Junichiro Sakata , Yoshiharu Hirakata , Norihito Sone
IPC分类号： H01J1/62
CPC分类号： H01L27/3244 , H01L27/322 , H01L27/3276 , H01L51/5048 , H01L51/5088 , H01L51/5092 , H01L51/52 , H01L51/5206 , H01L51/5215 , H01L51/5218 , H01L51/5234 , H01L51/5237 , H01L51/5246 , H01L51/5253 , H01L51/5259 , H01L51/56
摘要： Techniques are provided for manufacturing a light-emitting device having high internal quantum efficiency, consuming less power, having high luminance, and having high reliability. The techniques include forming a conductive light-transmitting oxide layer comprising a conductive light-transmitting oxide material and silicon oxide, forming a barrier layer in which density of the silicon oxide is higher than that in the conductive light-transmitting oxide layer over the conductive light-transmitting oxide layer, forming an anode having the conductive light-transmitting oxide layer and the barrier layer, heating the anode under a vacuum atmosphere, forming an electroluminescent layer over the heated anode, and forming a cathode over the electroluminescent layer. According to the techniques, the barrier layer is formed between the electroluminescent layer and the conductive light-transmitting oxide layer.
摘要翻译：提供了用于制造具有高内部量子效率，消耗较少功率，具有高亮度并且具有高可靠性的发光装置的技术。这些技术包括形成包含导电透光氧化物材料和氧化硅的导电透光氧化物层，形成阻挡层，其中氧化硅的密度高于导电光上的导电透光氧化物层的密度形成具有导电透光性氧化物层和阻挡层的阳极，在真空气氛下加热阳极，在加热阳极上形成电致发光层，在电致发光层上形成阴极。根据该技术，在电致发光层和导电透光性氧化物层之间形成阻挡层。

5. 发明授权

US07850501B2 Light-emitting device and method for manufacturing light-emitting device 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US07850501B2
公开(公告)日：2010-12-14
申请号：US11687204
申请日：2007-03-16
申请人： Shunpei Yamazaki , Kengo Akimoto , Junichiro Sakata , Yoshiharu Hirakata , Norihito Sone
发明人： Shunpei Yamazaki , Kengo Akimoto , Junichiro Sakata , Yoshiharu Hirakata , Norihito Sone
IPC分类号： H01J1/62
CPC分类号： H01L27/3244 , H01L27/322 , H01L27/3276 , H01L51/5048 , H01L51/5088 , H01L51/5092 , H01L51/52 , H01L51/5206 , H01L51/5215 , H01L51/5218 , H01L51/5234 , H01L51/5237 , H01L51/5246 , H01L51/5253 , H01L51/5259 , H01L51/56
摘要： Techniques are provided for manufacturing a light-emitting device having high internal quantum efficiency, consuming less power, having high luminance, and having high reliability. The techniques include forming a conductive light-transmitting oxide layer comprising a conductive light-transmitting oxide material and silicon oxide, forming a barrier layer in which density of the silicon oxide is higher than that in the conductive light-transmitting oxide layer over the conductive light-transmitting oxide layer, forming an anode having the conductive light-transmitting oxide layer and the barrier layer, heating the anode under a vacuum atmosphere, forming an electroluminescent layer over the heated anode, and forming a cathode over the electroluminescent layer. According to the techniques, the barrier layer is formed between the electroluminescent layer and the conductive light-transmitting oxide layer.
摘要翻译：提供了用于制造具有高内部量子效率，消耗较少功率，具有高亮度并且具有高可靠性的发光装置的技术。这些技术包括形成包含导电透光氧化物材料和氧化硅的导电透光氧化物层，形成阻挡层，其中氧化硅的密度高于导电光上的导电透光氧化物层的密度形成具有导电透光性氧化物层和阻挡层的阳极，在真空气氛下加热阳极，在加热阳极上形成电致发光层，在电致发光层上形成阴极。根据该技术，在电致发光层和导电透光性氧化物层之间形成阻挡层。

6. 发明授权

US07205716B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US07205716B2
公开(公告)日：2007-04-17
申请号：US10967281
申请日：2004-10-19
申请人： Shunpei Yamazaki , Kengo Akimoto , Junichiro Sakata , Yoshiharu Hirakata , Norihito Sone
发明人： Shunpei Yamazaki , Kengo Akimoto , Junichiro Sakata , Yoshiharu Hirakata , Norihito Sone
IPC分类号： H01J1/62 , H01J63/04
CPC分类号： H01L27/3244 , H01L27/322 , H01L27/3276 , H01L51/5048 , H01L51/5088 , H01L51/5092 , H01L51/52 , H01L51/5206 , H01L51/5215 , H01L51/5218 , H01L51/5234 , H01L51/5237 , H01L51/5246 , H01L51/5253 , H01L51/5259 , H01L51/56
摘要： Techniques are provided for manufacturing a light-emitting device having high internal quantum efficiency, consuming less power, having high luminance, and having high reliability. The techniques include forming a conductive light-transmitting oxide layer comprising a conductive light-transmitting oxide material and silicon oxide, forming a barrier layer in which density of the silicon oxide is higher than that in the conductive light-transmitting oxide layer over the conductive light-transmitting oxide layer, forming an anode having the conductive light-transmitting oxide layer and the barrier layer, heating the anode under a vacuum atmosphere, forming an electroluminescent layer over the heated anode, and forming a cathode over the electroluminescent layer. According to the techniques, the barrier layer is formed between the electroluminescent layer and the conductive light-transmitting oxide layer.
摘要翻译：提供了用于制造具有高内部量子效率，消耗较少功率，具有高亮度并且具有高可靠性的发光装置的技术。这些技术包括形成包含导电透光氧化物材料和氧化硅的导电透光氧化物层，形成阻挡层，其中氧化硅的密度高于导电光上的导电透光氧化物层的密度形成具有导电透光性氧化物层和阻挡层的阳极，在真空气氛下加热阳极，在加热阳极上形成电致发光层，在电致发光层上形成阴极。根据该技术，在电致发光层和导电透光性氧化物层之间形成阻挡层。

7. 发明申请

US20050084994A1 Light-emitting device and method for manufacturing light-emitting device 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20050084994A1
公开(公告)日：2005-04-21
申请号：US10967281
申请日：2004-10-19
申请人： Shunpei Yamazaki , Kengo Akimoto , Junichiro Sakata , Yoshiharu Hirakata , Norihito Sone
发明人： Shunpei Yamazaki , Kengo Akimoto , Junichiro Sakata , Yoshiharu Hirakata , Norihito Sone
IPC分类号： H01L21/00 , H01L27/32 , H01L51/50 , H01L51/52
CPC分类号： H01L27/3244 , H01L27/322 , H01L27/3276 , H01L51/5048 , H01L51/5088 , H01L51/5092 , H01L51/52 , H01L51/5206 , H01L51/5215 , H01L51/5218 , H01L51/5234 , H01L51/5237 , H01L51/5246 , H01L51/5253 , H01L51/5259 , H01L51/56
摘要： It is an object of the present invention to provide a method for manufacturing a light-emitting device having high internal quantum efficiency, consuming less power, having high luminance, and having high reliability. The present invention provides a method for manufacturing a light-emitting device comprising the steps of forming a conductive light-transmitting oxide layer comprising a conductive light-transmitting oxide material and silicon oxide, forming a barrier layer in which density of the silicon oxide is higher than that in the conductive light-transmitting oxide layer over the conductive light-transmitting oxide layer, forming an anode having the conductive light-transmitting oxide layer and the barrier layer, heating the anode under a vacuum atmosphere, forming an electroluminescent layer over the heated anode, and forming a cathode over the electroluminescent layer, wherein the barrier layer is formed between the electroluminescent layer and the conductive light-transmitting oxide layer.
摘要翻译：本发明的目的是提供一种制造具有高内部量子效率，消耗较少功率，具有高亮度并具有高可靠性的发光装置的方法。本发明提供一种制造发光器件的方法，包括以下步骤：形成包含导电透光氧化物材料和氧化硅的导电透光氧化物层，形成氧化硅密度较高的阻挡层比在导电透光氧化物层上的导电透光氧化物层中的导电透光氧化物层中形成具有导电透光氧化物层和阻挡层的阳极，在真空气氛下加热阳极，在加热的阳极，并且在所述电致发光层上形成阴极，其中所述阻挡层形成在所述电致发光层和所述导电透光氧化物层之间。

8. 发明授权

US08399313B2 Method of manufacturing semiconductor device having first conductive layer including aluminum 有权
标题翻译：制造具有包括铝的第一导电层的半导体器件的方法
公开(公告)号：US08399313B2
公开(公告)日：2013-03-19
申请号：US13186170
申请日：2011-07-19
申请人： Kengo Akimoto , Hotaka Maruyama
发明人： Kengo Akimoto , Hotaka Maruyama
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L21/02672 , H01L21/02422 , H01L21/02532 , H01L21/2022 , H01L21/2026 , H01L21/3221 , H01L27/124 , H01L27/1277 , H01L29/4908 , H01L29/66765 , H01L29/78678
摘要： A gate electrode is formed by forming a first conductive layer containing aluminum as its main component over a substrate, forming a second conductive layer made from a material different from that used for forming the first conductive layer over the first conductive layer; and patterning the first conductive layer and the second conductive layer. Further, the first conductive layer includes one or more selected from carbon, chromium, tantalum, tungsten, molybdenum, titanium, silicon, and nickel. And the second conductive layer includes one or more selected from chromium, tantalum, tungsten, molybdenum, titanium, silicon, and nickel, or nitride of these materials.
摘要翻译：通过在衬底上形成以铝作为主要成分的第一导电层形成栅电极，形成由不同于在第一导电层上形成第一导电层的材料制成的材料制成的第二导电层; 以及图案化第一导电层和第二导电层。此外，第一导电层包括选自碳，铬，钽，钨，钼，钛，硅和镍中的一种或多种。并且第二导电层包括选自铬，钽，钨，钼，钛，硅和镍中的一种或多种，或这些材料的氮化物。

9. 发明授权

US08003449B2 Method of manufacturing a semiconductor device having a reverse staggered thin film transistor 有权
标题翻译：制造具有反交错薄膜晶体管的半导体器件的方法
公开(公告)号：US08003449B2
公开(公告)日：2011-08-23
申请号：US11284445
申请日：2005-11-22
申请人： Kengo Akimoto , Hotaka Maruyama
发明人： Kengo Akimoto , Hotaka Maruyama
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L21/02672 , H01L21/02422 , H01L21/02532 , H01L21/2022 , H01L21/2026 , H01L21/3221 , H01L27/124 , H01L27/1277 , H01L29/4908 , H01L29/66765 , H01L29/78678
摘要： A gate electrode is formed by forming a first conductive layer containing aluminum as its main component over a substrate, forming a second conductive layer made from a material different from that used for forming the first conductive layer over the first conductive layer; and patterning the first conductive layer and the second conductive layer. Further, the first conductive layer includes one or more selected from carbon, chromium, tantalum, tungsten, molybdenum, titanium, silicon, and nickel. And the second conductive layer includes one or more selected from chromium, tantalum, tungsten, molybdenum, titanium, silicon, and nickel, or nitride of these materials.
摘要翻译：通过在衬底上形成以铝作为主要成分的第一导电层形成栅电极，形成由不同于在第一导电层上形成第一导电层的材料制成的材料制成的第二导电层; 以及图案化第一导电层和第二导电层。此外，第一导电层包括选自碳，铬，钽，钨，钼，钛，硅和镍中的一种或多种。并且第二导电层包括选自铬，钽，钨，钼，钛，硅和镍中的一种或多种，或这些材料的氮化物。

10. 发明授权

US07696024B2 Semiconductor device and manufacturing method thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07696024B2
公开(公告)日：2010-04-13
申请号：US11693447
申请日：2007-03-29
申请人： Hotaka Maruyama , Kengo Akimoto
发明人： Hotaka Maruyama , Kengo Akimoto
IPC分类号： H01L21/00 , H01L27/088
CPC分类号： H01L27/127 , H01L27/1214 , H01L27/1266 , H01L29/41733 , H01L29/458 , H01L29/66757 , H01L29/78621
摘要： A semiconductor device is provided, which comprises a semiconductor film, a gate insulating film, a gate electrode, an insulating film, and a source and drain electrodes. The semiconductor film includes at least a channel forming region, a region, a source and drain regions disposed between the channel forming region and the region, a first silicide region over the region, and a second silicide region over a portion of the source and drain regions. The insulating film has a contact hole to expose at least the first silicide region. Each of the source and drain electrodes is electrically connected to the first silicide region via the contact hole. The region includes an element imparting one conductivity type at a lower concentration than the source and drain regions.
摘要翻译：提供一种半导体器件，其包括半导体膜，栅极绝缘膜，栅电极，绝缘膜以及源极和漏极。半导体膜包括至少沟道形成区域，区域，设置在沟道形成区域和区域之间的源极和漏极区域，该区域上的第一硅化物区域和源极和漏极的一部分上的第二硅化物区域地区。绝缘膜具有至少露出第一硅化物区域的接触孔。源电极和漏电极中的每一个经由接触孔电连接到第一硅化物区域。该区域包括赋予比源区和漏区更低浓度的一种导电类型的元件。

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