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1. 发明申请

US20120138922A1 OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE 有权
标题翻译：氧化物半导体膜和半导体器件
公开(公告)号：US20120138922A1
公开(公告)日：2012-06-07
申请号：US13307398
申请日：2011-11-30
申请人： Shunpei YAMAZAKI , Masashi TSUBUKU , Kengo AKIMOTO , Hiroki OHARA , Tatsuya HONDA , Takatsugu OMATA , Yusuke NONAKA , Masahiro TAKAHASHI , Akiharu MIYANAGA
发明人： Shunpei YAMAZAKI , Masashi TSUBUKU , Kengo AKIMOTO , Hiroki OHARA , Tatsuya HONDA , Takatsugu OMATA , Yusuke NONAKA , Masahiro TAKAHASHI , Akiharu MIYANAGA
IPC分类号： H01L29/12
CPC分类号： H01L29/78696 , H01L29/045 , H01L29/1033 , H01L29/247 , H01L29/7869 , H01L29/78693
摘要： An oxide semiconductor film which has more stable electric conductivity is provided. Further, a semiconductor device which has stable electric characteristics and high reliability is provided by using the oxide semiconductor film. An oxide semiconductor film includes a crystalline region, and the crystalline region includes a crystal in which an a-b plane is substantially parallel with a surface of the film and a c-axis is substantially perpendicular to the surface of the film; the oxide semiconductor film has stable electric conductivity and is more electrically stable with respect to irradiation with visible light, ultraviolet light, and the like. By using such an oxide semiconductor film for a transistor, a highly reliable semiconductor device having stable electric characteristics can be provided.
摘要翻译：提供了具有更稳定的导电性的氧化物半导体膜。此外，通过使用氧化物半导体膜提供具有稳定的电特性和高可靠性的半导体器件。氧化物半导体膜包括结晶区域，并且结晶区域包括其中a-b平面基本上平行于膜的表面并且c轴基本上垂直于膜的表面的晶体; 氧化物半导体膜具有稳定的导电性，并且相对于可见光，紫外线等的照射而言更加电稳定。通过使用这种用于晶体管的氧化物半导体膜，可以提供具有稳定电特性的高可靠性半导体器件。

2. 发明申请

US20110318916A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE 有权
标题翻译：用于制造半导体器件的半导体器件和方法
公开(公告)号：US20110318916A1
公开(公告)日：2011-12-29
申请号：US13228486
申请日：2011-09-09
申请人： Kengo AKIMOTO , Masashi TSUBUKU
发明人： Kengo AKIMOTO , Masashi TSUBUKU
IPC分类号： H01L21/283
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/41733
摘要： An object is to suppress deterioration of element characteristics even when an oxide semiconductor is formed after a gate insulating layer, a source electrode layer, and a drain electrode layer are formed. A gate electrode layer is formed over a substrate. A gate insulating layer is formed over the gate electrode layer. A source electrode layer and a drain electrode layer are formed over the gate insulating layer. Surface treatment is performed on surfaces of the gate insulating layer, the source electrode layer, and the drain electrode layer which are formed over the substrate. After the surface treatment is performed, an oxide semiconductor layer is formed over the gate insulating layer, the source electrode layer, and the drain electrode layer.
摘要翻译：即使在形成了栅极绝缘层，源极电极层和漏极电极层之后形成氧化物半导体，也是要抑制元件特性的劣化。在基板上形成栅极电极层。在栅电极层上形成栅极绝缘层。源极电极层和漏电极层形成在栅绝缘层上。在形成在基板上的栅极绝缘层，源极电极层和漏极电极层的表面上进行表面处理。在进行表面处理之后，在栅极绝缘层，源极电极层和漏极电极层上形成氧化物半导体层。

3. 发明申请

US20110204362A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110204362A1
公开(公告)日：2011-08-25
申请号：US13026518
申请日：2011-02-14
申请人： Kengo AKIMOTO , Ryosuke WATANABE , Masashi TSUBUKU , Shunpei YAMAZAKI
发明人： Kengo AKIMOTO , Ryosuke WATANABE , Masashi TSUBUKU , Shunpei YAMAZAKI
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/7869 , H01L29/41733 , H01L29/66969 , H01L29/78618
摘要： It is an object to provide a semiconductor device including an oxide semiconductor, in which miniaturization of a transistor is achieved and the concentration of an electric field is relieved. The width of a gate electrode is reduced and a space between a source electrode layer and a drain electrode layer is shortened. By adding a rare gas in a self-alignment manner with the use of a gate electrode as a mask, a low-resistance region in contact with a channel formation region can be provided in an oxide semiconductor layer. Accordingly, even when the width of the gate electrode, that is, the line width of a gate wiring is small, the low-resistance region can be provided with high positional accuracy, so that miniaturization of a transistor can be realized.
摘要翻译：本发明的目的是提供一种包括氧化物半导体的半导体器件，其中实现了晶体管的小型化和电场的集中。栅电极的宽度减小，源电极层和漏电极层之间的间隔缩短。通过使用栅电极作为掩模以自对准的方式添加稀有气体，可以在氧化物半导体层中提供与沟道形成区域接触的低电阻区域。因此，即使栅电极的宽度，即栅极配线的线宽小，也能够提供高电位区域的高位置精度，能够实现晶体管的小型化。

4. 发明申请

US20110024740A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110024740A1
公开(公告)日：2011-02-03
申请号：US12846572
申请日：2010-07-29
申请人： Shunpei YAMAZAKI , Masashi TSUBUKU , Kengo AKIMOTO , Miyuki HOSOBA , Junichiro SAKATA
发明人： Shunpei YAMAZAKI , Masashi TSUBUKU , Kengo AKIMOTO , Miyuki HOSOBA , Junichiro SAKATA
IPC分类号： H01L29/786 , H01L21/44
CPC分类号： H01L29/78696 , H01L27/1225 , H01L29/7869
摘要： A semiconductor device having a structure which enables sufficient reduction in parasitic capacitance is provided. In addition, the operation speed of thin film transistors in a driver circuit is improved. In a bottom-gate thin film transistor in which an oxide insulating layer is in contact with a channel formation region in an oxide semiconductor layer, a source electrode layer and a drain electrode layer are formed in such a manner that they do not overlap with a gate electrode layer. Thus, the distance between the gate electrode layer and the source electrode layer and between the gate electrode layer and the drain electrode layer are increased; accordingly, parasitic capacitance can be reduced.
摘要翻译：提供具有能够充分降低寄生电容的结构的半导体器件。此外，提高了驱动电路中薄膜晶体管的操作速度。在其中氧化物绝缘层与氧化物半导体层中的沟道形成区域接触的底栅极薄膜晶体管中，以与栅极薄膜晶体管不重叠的方式形成源电极层和漏电极层，栅电极层。因此，栅极电极层与源电极层之间以及栅极电极层和漏极电极层之间的距离增加; 因此，可以减小寄生电容。

5. 发明申请

US20120126232A1 DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20120126232A1
公开(公告)日：2012-05-24
申请号：US13363405
申请日：2012-02-01
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Masashi TSUBUKU , Kengo AKIMOTO , Miyuki HOSOBA , Masayuki SAKAKURA , Yoshiaki OIKAWA
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Masashi TSUBUKU , Kengo AKIMOTO , Miyuki HOSOBA , Masayuki SAKAKURA , Yoshiaki OIKAWA
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L21/477 , G02F1/133345 , G02F1/1368 , H01L21/02565 , H01L21/02664 , H01L27/1225 , H01L27/1248 , H01L27/1251 , H01L27/1259 , H01L29/66969 , H01L29/7869 , H01L29/78696
摘要： An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.
摘要翻译：本发明的目的是提供具有优异显示特性的显示装置，其中使用具有对应于各个电路的特性的不同结构的晶体管形成设置在一个基板上的像素电路和驱动电路。驱动器电路部分包括驱动电路晶体管，其中使用金属膜形成栅电极层，源电极层和漏电极层，并且使用氧化物半导体形成沟道层。像素部分包括其中使用氧化物导体形成栅电极层，源电极层和漏电极层的像素晶体管，并且使用氧化物半导体形成半导体层。像素晶体管使用透光材料形成，因此可以制造具有较高开口率的显示装置。

6. 发明申请

US20120064664A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120064664A1
公开(公告)日：2012-03-15
申请号：US13222513
申请日：2011-08-31
申请人： Shunpei YAMAZAKI , Yusuke NONAKA , Takayuki INOUE , Masashi TSUBUKU , Kengo AKIMOTO , Akiharu MIYANAGA
发明人： Shunpei YAMAZAKI , Yusuke NONAKA , Takayuki INOUE , Masashi TSUBUKU , Kengo AKIMOTO , Akiharu MIYANAGA
IPC分类号： H01L21/44
CPC分类号： H01L29/78606 , H01L23/552 , H01L23/564 , H01L29/04 , H01L29/66969 , H01L29/7869 , H01L29/78696 , H01L2924/0002 , H01L2924/00
摘要： An object is to manufacture a semiconductor device including an oxide semiconductor film, which has stable electric characteristics and high reliability. A crystalline oxide semiconductor film is formed, without performing a plurality of steps, as follows: by utilizing a difference in atomic weight of plural kinds of atoms included in an oxide semiconductor target, zinc with low atomic weight is preferentially deposited on an oxide insulating film to form a seed crystal including zinc; and tin, indium, or the like with high atomic weight is deposited on the seed crystal while causing crystal growth. Further, a crystalline oxide semiconductor film is formed by causing crystal growth using a seed crystal with a hexagonal crystal structure including zinc as a nucleus, whereby a single crystal oxide semiconductor film or a substantially single crystal oxide semiconductor film is formed.
摘要翻译：本发明的目的是制造具有稳定的电特性和高可靠性的氧化物半导体膜的半导体装置。通过利用包含在氧化物半导体靶中的多种原子的原子量的差异，形成结晶氧化物半导体膜，而不进行多个步骤，优选将低原子量的锌沉积在氧化物绝缘膜上形成包含锌的晶种; 并且具有高原子量的锡，铟等沉积在晶种上同时引起晶体生长。此外，通过使用具有包含锌作为核的六方晶系结构的晶种进行晶体生长来形成结晶氧化物半导体膜，从而形成单晶氧化物半导体膜或大致单晶氧化物半导体膜。

7. 发明申请

US20110058116A1 LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US20110058116A1
公开(公告)日：2011-03-10
申请号：US12871162
申请日：2010-08-30
申请人： Shunpei YAMAZAKI , Masayuki SAKAKURA , Junichiro SAKATA , Masashi TSUBUKU , Kengo AKIMOTO , Miyuki HOSOBA , Yoshiaki OIKAWA
发明人： Shunpei YAMAZAKI , Masayuki SAKAKURA , Junichiro SAKATA , Masashi TSUBUKU , Kengo AKIMOTO , Miyuki HOSOBA , Yoshiaki OIKAWA
IPC分类号： H01L33/08 , H01L33/28
CPC分类号： H01L27/1225
摘要： An object is to provide an active matrix liquid crystal display device in which plural kinds of circuits are formed over one substrate and plural kinds of thin film transistors are provided corresponding to characteristics of the plural kinds of circuits. An inverted-coplanar thin film transistor including an oxide semiconductor layer which is over and overlaps with a source electrode layer and a drain electrode layer is used for a pixel thin film transistor. A channel-protective thin film transistor is used for a driver-circuit thin film transistor is used. In addition, main parts of the pixel thin film transistor are formed using a light-transmitting material, so that the aperture ratio is increased.
摘要翻译：本发明提供一种有源矩阵液晶显示装置，其中在一个基板上形成多种电路，并且根据多种电路的特性设置多种薄膜晶体管。包括与源电极层和漏电极层重叠的氧化物半导体层的倒共面薄膜晶体管用于像素薄膜晶体管。使用通道保护薄膜晶体管用于驱动电路薄膜晶体管。此外，使用透光材料形成像素薄膜晶体管的主要部分，使得开口率增加。

8. 发明申请

US20110057187A1 LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20110057187A1
公开(公告)日：2011-03-10
申请号：US12871184
申请日：2010-08-30
申请人： Masayuki SAKAKURA , Yoshiaki OIKAWA , Shunpei YAMAZAKI , Junichiro SAKATA , Masashi TSUBUKU , Kengo AKIMOTO , Miyuki HOSOBA
发明人： Masayuki SAKAKURA , Yoshiaki OIKAWA , Shunpei YAMAZAKI , Junichiro SAKATA , Masashi TSUBUKU , Kengo AKIMOTO , Miyuki HOSOBA
IPC分类号： H01L33/00 , H01L21/02
CPC分类号： H01L27/1251 , H01L27/1225 , H01L27/322 , H01L27/3262
摘要： An object of the present invention is to provide a light-emitting device in which plural kinds of circuits are formed over the same substrate, and plural kinds of thin film transistors are provided in accordance with characteristics of the plural kinds of circuits. An inverted-coplanar thin film transistor, an oxide semiconductor layer of which overlaps with a source and drain electrode layers, and a channel-etched thin film transistor are used as a thin film transistor for a pixel and a thin film transistor for a driver circuit, respectively. Between the thin film transistor for a pixel and a light-emitting element, a color filter layer is provided so as to overlap with the light-emitting element which is electrically connected to the thin film transistor for a pixel.
摘要翻译：本发明的目的是提供一种在同一基板上形成多种电路的发光器件，并且根据多种电路的特性提供多种薄膜晶体管。作为用于像素的薄膜晶体管和用于驱动电路的薄膜晶体管，使用反向共面薄膜晶体管，其与源极和漏极层重叠的氧化物半导体层和沟道蚀刻薄膜晶体管，分别。在用于像素的薄膜晶体管和发光元件之间，设置滤色器层，以与与像素的薄膜晶体管电连接的发光元件重叠。

9. 发明申请

US20110031496A1 LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20110031496A1
公开(公告)日：2011-02-10
申请号：US12848375
申请日：2010-08-02
申请人： Shunpei YAMAZAKI , Masayuki SAKAKURA , Junichiro SAKATA , Masashi TSUBUKU , Kengo AKIMOTO , Miyuki HOSOBA , Yoshiaki OIKAWA
发明人： Shunpei YAMAZAKI , Masayuki SAKAKURA , Junichiro SAKATA , Masashi TSUBUKU , Kengo AKIMOTO , Miyuki HOSOBA , Yoshiaki OIKAWA
IPC分类号： H01L33/02 , H01L33/00 , H01L33/44
CPC分类号： H01L27/3262 , H01L27/1225 , H01L27/322 , H01L27/3248 , H01L51/5278 , H01L2251/5323
摘要： A light-emitting device in which plural kinds of circuits are formed over one substrate and plural kinds of thin film transistors in accordance with characteristics of the plural kinds of circuits are included. An inverted-coplanar thin film transistor including an oxide semiconductor layer which overlaps a source and drain electrode layers is used as a thin film transistor for a pixel, a channel-stop thin film transistor is used as a thin film transistor for a driver circuit, and a color filter layer is provided between the thin film transistor for a pixel and a light-emitting element so as to overlap the light-emitting element which is electrically connected to the thin film transistor for a pixel.
摘要翻译：包括根据多种电路的特性，在一个基板上形成多种电路的多个薄膜晶体管的发光器件。包括与源极和漏极层重叠的氧化物半导体层的倒共面薄膜晶体管用作像素的薄膜晶体管，通道停止薄膜晶体管用作用于驱动电路的薄膜晶体管，并且在用于像素的薄膜晶体管和发光元件之间设置滤色器层，以与与像素的薄膜晶体管电连接的发光元件重叠。

10. 发明申请

US20100163866A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100163866A1
公开(公告)日：2010-07-01
申请号：US12634084
申请日：2009-12-09
申请人： Kengo AKIMOTO , Masashi TSUBUKU
发明人： Kengo AKIMOTO , Masashi TSUBUKU
IPC分类号： H01L29/786 , H01L21/336 , H01L29/12
CPC分类号： H01L33/0041 , H01L29/66969 , H01L29/78606 , H01L29/78618 , H01L29/7869 , H01L2924/0002 , H01L2924/00
摘要： One of factors that increase the contact resistance at the interface between a first semiconductor layer where a channel is formed and source and drain electrode layers is a film with high electric resistance formed by dust or impurity contamination of a surface of a metal material serving as the source and drain electrode layers. As a solution, a first protective layer and a second protective layer including a second semiconductor having a conductivity that is less than or equal to that of the first semiconductor layer is stacked successively over source and drain electrode layers without exposed to air, the stack of films is used for the source and drain electrode layers.
摘要翻译：增加在形成沟道的第一半导体层与源电极层与漏极电极层之间的界面处的接触电阻的因素之一是具有高电阻的膜，其由作为金属材料的金属材料的表面的灰尘或杂质污染形成源极和漏极电极层。作为解决方案，包括导电率小于或等于第一半导体层的导电率的第二半导体的第一保护层和第二保护层在不暴露于空气的情况下在源极和漏极电极层上依次层叠，膜用于源电极层和漏电极层。

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