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1. 发明申请

US20060243974A1 Thin-film transistor 审中-公开
标题翻译：薄膜晶体管
公开(公告)号：US20060243974A1
公开(公告)日：2006-11-02
申请号：US11175440
申请日：2005-07-07
申请人： Keng-Li Su , Chen-Pang Kung , Jan-Ruei Lin , Chia-Pao Chang , Yi-Hsun Huang
发明人： Keng-Li Su , Chen-Pang Kung , Jan-Ruei Lin , Chia-Pao Chang , Yi-Hsun Huang
IPC分类号： H01L29/04
CPC分类号： H01L29/78603 , H01L27/1296 , H01L29/41733
摘要： A thin-film transistor (TFT) is described to have a gate layer, an insulating layer, a semiconductor layer, and a source/drain layer formed on a flexible substrate. The source and the drain layers are separated by a channel with a special shape. This does not only increase the aspect ratio of the channel per unit area, the source and the drain also have multiple directions for transmitting carriers. The carrier mobility of the TFT is thus enhanced with uniform and stable circuit properties.
摘要翻译：薄膜晶体管（TFT）被描述为具有形成在柔性基板上的栅极层，绝缘层，半导体层和源极/漏极层。源极和漏极层由具有特殊形状的通道分开。这不仅增加了每单位面积通道的纵横比，而且源和漏还具有用于传输载体的多个方向。因此，TFT的载流子迁移率增强，具有均匀且稳定的电路特性。

2. 发明申请

US20090068773A1 METHOD FOR FABRICATING PIXEL STRUCTURE OF ACTIVE MATRIX ORGANIC LIGHT-EMITTING DIODE 有权
标题翻译：有源矩阵有机发光二极管像素结构的制作方法
公开(公告)号：US20090068773A1
公开(公告)日：2009-03-12
申请号：US12254820
申请日：2008-10-20
申请人： Chih-Ming Lai , Yung-Hui Yeh , Yi-Hsun Huang
发明人： Chih-Ming Lai , Yung-Hui Yeh , Yi-Hsun Huang
IPC分类号： H01L21/04
CPC分类号： H01L29/7869 , H01L27/1225 , H01L27/322 , H01L27/3265
摘要： A method for fabricating an AMOLED pixel includes forming a transparent semiconductor layer on a substrate and forming a first channel layer of the switch TFT, a lower electrode of a storage capacitor and a second channel layer of a driving TFT. A first dielectric layer is formed over the substrate. A first opaque metal gate of the switch TFT, a second opaque metal gate of the driving TFT and a scan line are formed on the first dielectric layer. A first source and a first drain of the switch TFT are formed in the first channel layer and a second source and a second drain of the switch TFT are formed in the second channel layer. A patterned transparent metal layer is formed on the first dielectric layer. A data line is formed over the substrate. An OLED is formed over the substrate.
摘要翻译：一种制造AMOLED像素的方法包括在衬底上形成透明半导体层并形成开关TFT的第一沟道层，存储电容器的下电极和驱动TFT的第二沟道层。第一电介质层形成在衬底上。开关TFT的第一不透明金属栅极，驱动TFT的第二不透明金属栅极和扫描线形成在第一介电层上。开关TFT的第一源极和第一漏极形成在第一沟道层中，并且开关TFT的第二源极和第二漏极形成在第二沟道层中。在第一电介质层上形成有图案的透明金属层。数据线形成在衬底上。在衬底上形成OLED。

3. 发明授权

US11338019B2 Recombinant thrombomodulin domain 1 for use in treating eye diseases associated with pathological ocular angiogenesis 有权
公开(公告)号：US11338019B2
公开(公告)日：2022-05-24
申请号：US16882508
申请日：2020-05-24
申请人： Yi-Hsun Huang , Hua-Lin Wu
发明人： Yi-Hsun Huang , Hua-Lin Wu
IPC分类号： A61K38/36 , A61K38/18 , A61P27/02 , A61K38/17 , A61K9/00 , A61K9/06
摘要： The present application relates to dual anti-angiogenic and anti-inflammatory effects of recombinant thrombomodulin domain 1 (TMD1). Specifically, an isolated recombinant polypeptide comprising an amino acid sequence that is at least 80% identical to TMD1 for use in treating an eye disease and/or an eye disorder associated with pathological ocular angiogenesis (POA) in a subject in need thereof is disclosed. The length of the recombinant polypeptide is no more than 200 amino acid residues. The eye disease and/or the eye disorder may be at least one selected from the group consisting of retinopathy of prematurity, diabetic retinopathy, and age-related macular degeneration. Use of TMD1 in the manufacture of a medicament for treating an eye disease and/or an eye disorder associated with vascular endothelial growth factor (VEGF)-induced ocular angiogenesis and/or hypoxia-inducible factor-1α (HIF-1α)-VEGF pathway is also disclosed.

4. 发明申请

US20070152217A1 PIXEL STRUCTURE OF ACTIVE MATRIX ORGANIC LIGHT-EMITTING DIODE AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：有源矩阵有机发光二极管的像素结构及其制作方法
公开(公告)号：US20070152217A1
公开(公告)日：2007-07-05
申请号：US11308015
申请日：2006-03-03
申请人： Chih-Ming Lai , Yung-Hui Yeh , Yi-Hsun Huang
发明人： Chih-Ming Lai , Yung-Hui Yeh , Yi-Hsun Huang
IPC分类号： H01L29/04
CPC分类号： H01L29/7869 , H01L27/1225 , H01L27/322 , H01L27/3265
摘要： A pixel structure of an active matrix organic light-emitting diode (AMOLED) includes an organic light-emitting diode (OLED), a data line, at least one scan line, at least one switch thin film transistor (TFT), at least one driving TFT and at least one storage capacitor with two transparent electrodes. Since both the electrodes of the transparent storage capacitor are formed by transparent material, the aperture ratio of the pixel and the area of the capacitor largely increase and can reach 50%˜95% of a pixel area. Thus, the display quality of an AMOLED panel can be improved.
摘要翻译：有源矩阵有机发光二极管（AMOLED）的像素结构包括有机发光二极管（OLED），数据线，至少一条扫描线，至少一个开关薄膜晶体管（TFT），至少一个驱动TFT和具有两个透明电极的至少一个存储电容器。由于透明储能电容器的两个电极由透明材料形成，所以像素的开口率和电容器的面积大大增加，并且可以达到象素面积的50％〜95％。因此，可以提高AMOLED面板的显示质量。

5. 发明授权

US08332183B2 Detection and analysis apparatus for membrane filtration process 失效
标题翻译：膜过滤检测分析装置
公开(公告)号：US08332183B2
公开(公告)日：2012-12-11
申请号：US12718117
申请日：2010-03-05
申请人： Kuo-Lun Tung , Yu-Ling Li , Nien-Jung Lin , Shih-Chieh Lai , Yi-Hsun Huang
发明人： Kuo-Lun Tung , Yu-Ling Li , Nien-Jung Lin , Shih-Chieh Lai , Yi-Hsun Huang
IPC分类号： G01B11/06
CPC分类号： G01B11/06
摘要： The present invention discloses a detection and analysis apparatus, comprising a photo sensing device, comprising a plurality of sensing elements linearly arranged to form a first array, for detecting a signal of the thickness change of the cake at a linear position of the filter medium; a driving device, for driving the photo sensing device to move relatively parallel to the filter medium on the top of the cake so that the photo sensing device detects the thickness change of the cake on at least one local plane of the filter medium; and a data processing device, coupling to the photo sensing device, for continuously processing and analyzing the signal detected by the photo sensing device to thereby in-situ estimate the thickness change of the cake on the at least one local plane of the filter medium during the filtration process.
摘要翻译：本发明公开了一种检测和分析装置，包括一个感光装置，其包括多个传感元件，其被直线地布置成形成第一阵列，用于检测滤饼在过滤介质的线性位置处的厚度变化的信号; 驱动装置，用于驱动光感测装置相对平行于滤饼顶部的过滤介质移动，使得感光装置检测滤饼在至少一个局部平面上的厚度变化; 以及耦合到光感测装置的数据处理装置，用于连续地处理和分析由感光装置检测到的信号，从而在滤纸的至少一个局部平面上原位估计滤饼的厚度变化，过滤过程。

6. 发明授权

US07575966B2 Method for fabricating pixel structure of active matrix organic light-emitting diode 有权
标题翻译：有源矩阵有机发光二极管像素结构的制作方法
公开(公告)号：US07575966B2
公开(公告)日：2009-08-18
申请号：US12254820
申请日：2008-10-20
申请人： Chih-Ming Lai , Yung-Hui Yeh , Yi-Hsun Huang
发明人： Chih-Ming Lai , Yung-Hui Yeh , Yi-Hsun Huang
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L29/7869 , H01L27/1225 , H01L27/322 , H01L27/3265
摘要： A method for fabricating an AMOLED pixel includes forming a transparent semiconductor layer on a substrate and forming a first channel layer of the switch TFT, a lower electrode of a storage capacitor and a second channel layer of a driving TFT. A first dielectric layer is formed over the substrate. A first opaque metal gate of the switch TFT, a second opaque metal gate of the driving TFT and a scan line are formed on the first dielectric layer. A first source and a first drain of the switch TFT are formed in the first channel layer and a second source and a second drain of the switch TFT are formed in the second channel layer. A patterned transparent metal layer is formed on the first dielectric layer. A data line is formed over the substrate. An OLED is formed over the substrate.
摘要翻译：一种制造AMOLED像素的方法包括在衬底上形成透明半导体层并形成开关TFT的第一沟道层，存储电容器的下电极和驱动TFT的第二沟道层。第一电介质层形成在衬底上。开关TFT的第一不透明金属栅极，驱动TFT的第二不透明金属栅极和扫描线形成在第一介电层上。开关TFT的第一源极和第一漏极形成在第一沟道层中，并且开关TFT的第二源极和第二漏极形成在第二沟道层中。在第一电介质层上形成有图案的透明金属层。数据线形成在衬底上。在衬底上形成OLED。

7. 发明授权

US07045817B2 Structure of TFT electrode for preventing metal layer diffusion and manufacturing method therefor 有权
标题翻译：用于防止金属层扩散的TFT电极的结构及其制造方法
公开(公告)号：US07045817B2
公开(公告)日：2006-05-16
申请号：US10964611
申请日：2004-10-15
申请人： Cheng-Chung Chen , Yu-Chang Sun , Yi-Hsun Huang , Chien-Wei Wu , Shuo-Wei Liang , Chia-Hsiang Chen , Chi-Shen Lee , Chai-Yuan Sheu , Yu-Chi Lee , Te-Ming Chu , Cheng-Hsing Chen
发明人： Cheng-Chung Chen , Yu-Chang Sun , Yi-Hsun Huang , Chien-Wei Wu , Shuo-Wei Liang , Chia-Hsiang Chen , Chi-Shen Lee , Chai-Yuan Sheu , Yu-Chi Lee , Te-Ming Chu , Cheng-Hsing Chen
IPC分类号： H01L31/0376 , H01L29/04 , G02F27/12 , G02F1/1343 , G02F1/136
CPC分类号： H01L29/78669 , H01L27/124 , H01L29/42384 , H01L29/4908 , H01L29/66765
摘要： The invention provides a TFT electrode structure and its manufacturing method that can prevent metal diffusion occurring in the fabrication of a TFT, and thereby reduce the risk of contamination of the chemical vapor deposition process due to metallic ion diffusion. The transparent pixel electrode is formed after the gate electrode metal so that the pixel transparent electrode can be used as a barrier layer to prevent metal diffusion under high temperature from the gate electrode metal to adjacent insulating layers or the active layer. Further, the method used to form the transparent pixel electrode is a low-temperature physical vapor deposition process, which affected less by the processing environment, and the transparent pixel electrode is a conductive layer that is not affected by metal diffusion.
摘要翻译：本发明提供一种能够防止TFT制造中发生金属扩散的TFT电极结构及其制造方法，从而降低由金属离子扩散引起的化学气相沉积工艺的污染风险。透明像素电极形成在栅电极金属之后，使得像素透明电极可以用作阻挡层，以防止在高温下从栅电极金属到相邻绝缘层或有源层的金属扩散。此外，用于形成透明像素电极的方法是低温物理气相沉积工艺，其受处理环境影响较小，并且透明像素电极是不受金属扩散影响的导电层。

8. 发明申请

US20070158706A1 THIN FILM TRANSISTOR 审中-公开
标题翻译：薄膜晶体管
公开(公告)号：US20070158706A1
公开(公告)日：2007-07-12
申请号：US11308147
申请日：2006-03-08
申请人： Chih-Ming Lai , Yung-Hui Yeh , Yi-Hsun Huang
发明人： Chih-Ming Lai , Yung-Hui Yeh , Yi-Hsun Huang
IPC分类号： H01L31/113 , H01L31/062
CPC分类号： H01L29/78603 , H01L27/0207 , H01L27/124
摘要： A thin film transistor for fabricating on a flexible substrate is provided. The thin film transistor includes a gate, a gate insulating layer, a channel layer, a first conductive pattern, and a second conductive pattern. The gate and the gate insulating layer are disposed on the flexible substrate, and the gate insulating layer covers the gate. The channel layer is disposed on the gate insulating layer and located above the gate. The channel layer has a first contact region and multiple second contact regions, wherein the first contact region is located between the second contact regions. In addition, the first conductive pattern is disposed on a portion of the gate insulating layer and the first contact region; and the second conductive pattern electrically insulated from the first conductive pattern is disposed on a portion of the gate insulating layer and the second contact region.
摘要翻译：提供了一种用于在柔性基板上制造的薄膜晶体管。薄膜晶体管包括栅极，栅极绝缘层，沟道层，第一导电图案和第二导电图案。栅极和栅极绝缘层设置在柔性基板上，栅极绝缘层覆盖栅极。沟道层设置在栅极绝缘层上并位于栅极上方。沟道层具有第一接触区域和多个第二接触区域，其中第一接触区域位于第二接触区域之间。此外，第一导电图案设置在栅极绝缘层和第一接触区域的一部分上; 并且与第一导电图案电绝缘的第二导电图案设置在栅极绝缘层和第二接触区域的一部分上。

9. 发明申请

US20060202203A1 Structure of TFT electrode for preventing metal layer diffusion and manufacturing method therefor 有权
公开(公告)号：US20060202203A1
公开(公告)日：2006-09-14
申请号：US11375336
申请日：2006-03-15
申请人： Cheng-Chung Chen , Yu-Chang Sun , Yi-Hsun Huang , Chien-Wei Wu , Shuo-Wei Liang , Chia-Hsiang Chen , Chi-Shen Lee , Chai-Yuan Sheu , Yu-Chi Lee , Te-Ming Chu , Cheng-Hsing Chen
发明人： Cheng-Chung Chen , Yu-Chang Sun , Yi-Hsun Huang , Chien-Wei Wu , Shuo-Wei Liang , Chia-Hsiang Chen , Chi-Shen Lee , Chai-Yuan Sheu , Yu-Chi Lee , Te-Ming Chu , Cheng-Hsing Chen
IPC分类号： H01L29/04
CPC分类号： H01L29/78669 , H01L27/124 , H01L29/42384 , H01L29/4908 , H01L29/66765
摘要： The invention provides a TFT electrode structure and its manufacturing method that can prevent metal diffusion occurring in the fabrication of a TFT, and thereby reduce the risk of contamination of the chemical vapor deposition process due to metallic ion diffusion. The transparent pixel electrode is formed after the gate electrode metal so that the pixel transparent electrode can be used as a barrier layer to prevent metal diffusion under high temperature from the gate electrode metal to adjacent insulating layers or the active layer. Further, the method used to form the transparent pixel electrode is a low-temperature physical vapor deposition process, which affected less by the processing environment, and the transparent pixel electrode is a conductive layer that is not affected by metal diffusion.

10. 发明申请

US20050274947A1 Structure of TFT electrode for preventing metal layer diffusion and manufacturing method therefor 有权
标题翻译：用于防止金属层扩散的TFT电极的结构及其制造方法
公开(公告)号：US20050274947A1
公开(公告)日：2005-12-15
申请号：US10964611
申请日：2004-10-15
申请人： Cheng-Chung Chen , Yu-Chang Sun , Yi-Hsun Huang , Chien-Wei Wu , Shuo-Wei Liang , Chia-Hsiang Chen , Chi-Shen Lee , Chai-Yuan Sheu , Yu-Chi Lee , Te-Ming Chu , Cheng-Hsing Chen
发明人： Cheng-Chung Chen , Yu-Chang Sun , Yi-Hsun Huang , Chien-Wei Wu , Shuo-Wei Liang , Chia-Hsiang Chen , Chi-Shen Lee , Chai-Yuan Sheu , Yu-Chi Lee , Te-Ming Chu , Cheng-Hsing Chen
IPC分类号： H01L21/00 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/423 , H01L29/49 , H01L29/786
CPC分类号： H01L29/78669 , H01L27/124 , H01L29/42384 , H01L29/4908 , H01L29/66765
摘要： The invention provides a TFT electrode structure and its manufacturing method that can prevent metal diffusion occurring in the fabrication of a TFT, and thereby reduce the risk of contamination of the chemical vapor deposition process due to metallic ion diffusion. The transparent pixel electrode is formed after the gate electrode metal so that the pixel transparent electrode can be used as a barrier layer to prevent metal diffusion under high temperature from the gate electrode metal to adjacent insulating layers or the active layer. Further, the method used to form the transparent pixel electrode is a low-temperature physical vapor deposition process, which affected less by the processing environment, and the transparent pixel electrode is a conductive layer that is not affected by metal diffusion.
摘要翻译：本发明提供一种能够防止TFT制造中发生金属扩散的TFT电极结构及其制造方法，从而降低由金属离子扩散引起的化学气相沉积工艺的污染风险。透明像素电极形成在栅电极金属之后，使得像素透明电极可以用作阻挡层，以防止在高温下从栅电极金属到相邻绝缘层或有源层的金属扩散。此外，用于形成透明像素电极的方法是低温物理气相沉积工艺，其受处理环境影响较小，并且透明像素电极是不受金属扩散影响的导电层。

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