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1. 发明授权

US06423869B1 Polyol-amino acid compounds having anti-helicobacter pylori activity 失效
标题翻译：具有抗幽门螺杆菌活性的多元醇 - 氨基酸化合物
公开(公告)号：US06423869B1
公开(公告)日：2002-07-23
申请号：US09423118
申请日：1999-11-01
申请人： Ken-ichiro Miyagawa , Shigetoshi Tsubotani , Masafumi Nakao , Yoshitaka Nakano , Keiji Kamiyama , Motoo Izawa , Yohko Akiyama , Yuji Nishikimi
发明人： Ken-ichiro Miyagawa , Shigetoshi Tsubotani , Masafumi Nakao , Yoshitaka Nakano , Keiji Kamiyama , Motoo Izawa , Yohko Akiyama , Yuji Nishikimi
IPC分类号： C07C22900
CPC分类号： C12R1/07 , A61K38/00 , C07B2200/07 , C07C237/12 , C07C237/22 , C07C271/22 , C07D207/16
摘要： A compound of the formula (I): wherein R1 represents an amino group which may be substituted; R2 represents a carboxy group which may be esterified or amidated; R3, R4, R5 and R6 each represent a hydroxy group which may be protected; Q represents an aryl group which may be substituted; or a salt thereof is disclosed. The compound (I) possesses ant-Helicobacter pylori activity, and is useful in the prevention or treatment of various diseases associated with Helicobacter bacteria, such as duodenal ulcer, gastric ulcer, chronic gastritis and cancer of the stomach.
摘要翻译：式（I）的化合物：其中R 1表示可以被取代的氨基; R2表示可被酯化或酰胺化的羧基; R3，R4，R5和R6各自表示可被保护的羟基; Q表示可以被取代的芳基; 或其盐。化合物（I）具有抗幽门螺杆菌活性，可用于预防或治疗与幽门螺杆菌相关的各种疾病，例如十二指肠溃疡，胃溃疡，慢性胃炎和胃癌。

2. 发明授权

US06341066B1 Electronic control unit having drive element and control processing element 失效
标题翻译：具有驱动元件和控制处理元件的电子控制单元
公开(公告)号：US06341066B1
公开(公告)日：2002-01-22
申请号：US09672498
申请日：2000-09-29
申请人： Toru Murowaki , Toshiaki Yagura , Yoshitaka Nakano , Taku Iida
发明人： Toru Murowaki , Toshiaki Yagura , Yoshitaka Nakano , Taku Iida
IPC分类号： H05K720
CPC分类号： H05K1/144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/181 , H05K7/20854 , H05K7/209 , H01L2924/00014 , H01L2924/00012
摘要： In an electronic control unit, a drive element liable to generate heat and a control processing element liable to be affected by heat are respectively mounted on a drive circuit board and a control circuit board different from each other, and the two boards are connected to each other by a flexible printed circuit board. The bonding portion of the flexible printed circuit board to the control circuit board is a back side portion of a connector mounted on the control circuit board at the same side as the control processing element. Therefore, heat generated by the drive element is suppressed from being transferred to the control processing element without causing layout hindrances.
摘要翻译：在电子控制单元中，易于产生热量的驱动元件和易受热影响的控制处理元件分别安装在彼此不同的驱动电路板和控制电路板上，并且两个板连接到每个另外由柔性印刷电路板。柔性印刷电路板与控制电路板的接合部分是安装在与控制处理元件同侧的控制电路板上的连接器的后侧部分。因此，抑制由驱动元件产生的热量而不会造成布局障碍而被转移到控制处理元件。

3. 发明授权

US07777252B2 III-V hemt devices 有权
标题翻译： III-V血液装置
公开(公告)号：US07777252B2
公开(公告)日：2010-08-17
申请号：US11632665
申请日：2005-06-22
申请人： Masahiro Sugimoto , Tetsu Kachi , Yoshitaka Nakano , Tsutomu Uesugi , Hiroyuki Ueda , Narumasa Soejima
发明人： Masahiro Sugimoto , Tetsu Kachi , Yoshitaka Nakano , Tsutomu Uesugi , Hiroyuki Ueda , Narumasa Soejima
IPC分类号： H01L29/739 , H01L31/072
CPC分类号： H01L29/778 , H01L21/28 , H01L29/2003 , H01L29/66431 , H01L29/66462 , H01L29/7787
摘要： A semiconductor device has a stacked structure in which a p-GaN layer, an SI-GaN layer, and an AlGaN layer are stacked, and has a gate electrode that is formed at a top surface side of the AlGaN layer. A band gap of the AlGaN layer is wider than a band gap of the p-GaN layer and the SI-GaN layer. Moreover, impurity concentration of the SI-GaN layer is less than 1×1017 cm−3. Semiconductor devices including III-V semiconductors may have a stable normally-off operation.
摘要翻译：半导体器件具有其中堆叠p-GaN层，SI-GaN层和AlGaN层的堆叠结构，并且具有形成在AlGaN层的顶表面侧的栅电极。 AlGaN层的带隙比p-GaN层和SI-GaN层的带隙宽。此外，SI-GaN层的杂质浓度小于1×1017cm-3。包括III-V半导体的半导体器件可以具有稳定的常关断操作。

4. 发明授权

US09184271B2 III-V HEMT devices 有权
标题翻译： III-V HEMT设备
公开(公告)号：US09184271B2
公开(公告)日：2015-11-10
申请号：US12822328
申请日：2010-06-24
申请人： Masahiro Sugimoto , Tetsu Kachi , Yoshitaka Nakano , Tsutomu Uesugi , Hiroyuki Ueda , Narumasa Soejima
发明人： Masahiro Sugimoto , Tetsu Kachi , Yoshitaka Nakano , Tsutomu Uesugi , Hiroyuki Ueda , Narumasa Soejima
IPC分类号： H01L29/778 , H01L29/66 , H01L21/28 , H01L29/20
CPC分类号： H01L29/778 , H01L21/28 , H01L29/2003 , H01L29/66431 , H01L29/66462 , H01L29/7787
摘要： A semiconductor device has a stacked structure in which a p-GaN layer, an SI-GaN layer, and an AlGaN layer are stacked, and has a gate electrode that is formed at a top surface side of the AlGaN layer. A band gap of the AlGaN layer is wider than a band gap of the p-GaN layer and the SI-GaN layer. Moreover, impurity concentration of the SI-GaN layer is less than 1×1017 cm−3. Semiconductor devices including III-V semiconductors may have a stable normally-off operation.
摘要翻译：半导体器件具有其中堆叠p-GaN层，SI-GaN层和AlGaN层的堆叠结构，并且具有形成在AlGaN层的顶表面侧的栅电极。 AlGaN层的带隙比p-GaN层和SI-GaN层的带隙宽。此外，SI-GaN层的杂质浓度小于1×1017cm-3。包括III-V半导体的半导体器件可以具有稳定的常关断操作。

5. 发明授权

US06972459B2 Metal oxide semiconductor transistor having a nitrogen cluster containing layer embedded in the substrate 失效
标题翻译：金属氧化物半导体晶体管，其具有嵌入到基板中的含氮簇的层
公开(公告)号：US06972459B2
公开(公告)日：2005-12-06
申请号：US10164313
申请日：2002-06-07
申请人： Shoji Miura , Mikimasa Suzuki , Akira Kuroyanagi , Yoshitaka Nakano
发明人： Shoji Miura , Mikimasa Suzuki , Akira Kuroyanagi , Yoshitaka Nakano
IPC分类号： H01L21/336 , H01L29/06 , H01L29/32 , H01L29/78 , H01L29/94
CPC分类号： H01L29/7813 , H01L29/32 , H01L29/7811 , H01L2924/0002 , H01L2924/00
摘要： A drift layer is formed on a substrate. A base region is formed on the drift layer. A plurality of source regions are formed in a surficial layer of the base region. A plurality of gate electrodes face to the base region and the source region via a gate insulating film. A source electrode is brought into contact with the base region and the source region. A nitrogen cluster containing layer is embedded in the drift layer so as to extend laterally under the base region so that at least part of the drift region is left under the nitrogen cluster containing layer.
摘要翻译：在基板上形成漂移层。在漂移层上形成基极区域。多个源极区域形成在基极区域的表面层中。多个栅电极经由栅极绝缘膜与基极区域和源极区域面对。源电极与基极区域和源极区域接触。含氮簇层包含在漂移层中，以在基底区域横向延伸，使得漂移区的至少一部分留在含氮簇层的下方。

6. 发明申请

US20130027666A1 OPHTHALMIC APPARATUS 审中-公开
标题翻译：眼镜装置
公开(公告)号：US20130027666A1
公开(公告)日：2013-01-31
申请号：US13559104
申请日：2012-07-26
申请人： Satoshi Aikawa , Hideyuki Ohban , Yohei Saito , Yoshitaka Nakano
发明人： Satoshi Aikawa , Hideyuki Ohban , Yohei Saito , Yoshitaka Nakano
IPC分类号： A61B3/10
CPC分类号： A61B3/14
摘要： An ophthalmic apparatus includes an optical system configured to illuminate a subject's eye with light generated by a light source, a first reflection portion including a reflection surface for reflecting the light generated by the light source and a transmission portion, and a light amount detection unit configured to detect an amount of light generated by the light source via the transmission portion. The first reflection portion is disposed in a direction opposite to a direction of the light generated by the light source toward the subject's eye.
摘要翻译：一种眼科装置，包括：被配置为用光源产生的光照射被检者的眼睛的光学系统;第一反射部，包括用于反射由光源产生的光的反射面和透射部;以及光量检测部，以检测由光源经由透射部分产生的光量。第一反射部分设置在与由光源产生的光朝向被检眼的方向相反的方向上。

7. 发明申请

US20080073652A1 III-V Hemt Devices 有权
标题翻译： III-V Hemt设备
公开(公告)号：US20080073652A1
公开(公告)日：2008-03-27
申请号：US11632665
申请日：2005-06-22
申请人： Masahiro Sugimoto , Tetsu Kachi , Yoshitaka Nakano , Tsutomu Uesugi , Hiroyuki Ueda , Narumasa Soejima
发明人： Masahiro Sugimoto , Tetsu Kachi , Yoshitaka Nakano , Tsutomu Uesugi , Hiroyuki Ueda , Narumasa Soejima
IPC分类号： H01L29/205 , H01L21/338 , H01L29/778
CPC分类号： H01L29/778 , H01L21/28 , H01L29/2003 , H01L29/66431 , H01L29/66462 , H01L29/7787
摘要： The semiconductor device has a stacked structure in which a p-GaN layer 32, an SI-GaN layer 62, and an AlGaN layer 34 are stacked, and has a gate electrode 44 that is formed at a top surface side of the AlGaN layer 34. A band gap of the AlGaN layer 34 is wider than a band gap of the p-GaN layer 32 and the SI-GaN layer 62. Moreover, impurity concentration of the SI-GaN layer 62 is less than 1×1017 cm−3. The semiconductor devices comprising III-V semiconductors that have a stable normally-off operation are realized.
摘要翻译：半导体器件具有层叠p-GaN层32，SI-GaN层62和AlGaN层34的堆叠结构，并且具有形成在AlGaN层34的顶面侧的栅电极44 AlGaN层34的带隙比p-GaN层32和SI-GaN层62的带隙宽。另外，SI-GaN层62的杂质浓度小于1×10 17 / SUP> cm 3 -3。实现了具有稳定的常关断操作的包括III-V半导体的半导体器件。

8. 发明授权

US07211839B2 Group III nitride semiconductor device 有权
标题翻译： III族氮化物半导体器件
公开(公告)号：US07211839B2
公开(公告)日：2007-05-01
申请号：US10771528
申请日：2004-02-05
申请人： Tetsu Kachi , Yoshitaka Nakano , Tsutomu Uesugi
发明人： Tetsu Kachi , Yoshitaka Nakano , Tsutomu Uesugi
IPC分类号： H01L29/793
CPC分类号： H01L29/7788 , H01L29/0646 , H01L29/2003 , H01L29/7786 , H01L29/7789 , H01L29/7828
摘要： A semiconductor device is formed by a first layer 32 composed of AlGaN, a second layer 42 composed of GaN, a gate electrode 34, a source electrode 38, and a drain electrode 28. The first layer 32 has a region 32a formed between the gate electrode 34 and the second layer 42. A channel is formed in the vicinity of the boundary 24 of the first layer 32 and the second layer 42. The second layer 42 has p-type conductivity and is in contact with the source electrode 38. When electrons flow in the channel, the electrons collide with surrounding atoms, and holes are formed. If holes are accumulated inside the semiconductor device, the presence of the accumulated holes causes dielectric breakdown. In the semiconductor device of the invention, holes are discharged to the outside of the device thorough the second layer 42 and the source electrode 38, and accumulation of holes can be prevented.
摘要翻译：半导体器件由由AlGaN构成的第一层32，由GaN构成的第二层42，栅电极34，源电极38和漏电极28形成。第一层32具有形成在栅电极34和第二层42之间的区域32a。在第一层32和第二层42的边界24附近形成沟道。第二层42具有p型导电性并且与源电极38接触。当电子在沟道中流动时，电子与周围的原子碰撞，形成孔。如果在半导体器件内部积聚有孔，则积聚的孔的存在引起介质击穿。在本发明的半导体器件中，通过第二层42和源电极38将孔排放到器件的外部，并且可以防止空穴的累积。

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