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1. 发明授权

US08859187B2 Method of forming resist pattern and negative resist composition 有权
标题翻译：形成抗蚀剂图案和负性抗蚀剂组合物的方法
公开(公告)号：US08859187B2
公开(公告)日：2014-10-14
申请号：US12438906
申请日：2007-10-19
申请人： Ken Tanaka , Sho Abe , Shigeru Yokoi
发明人： Ken Tanaka , Sho Abe , Shigeru Yokoi
IPC分类号： G03F7/095 , G03F7/038 , G03F7/039 , G03F7/20 , G03F7/30
CPC分类号： G03F7/0035 , G03F7/0048 , G03F7/0382 , G03F7/0397 , H01L21/0271 , H01L21/3086 , H01L21/3088
摘要： A novel method of forming a resist pattern in which thickness loss from the resist pattern is reduced, and a negative resist composition that can be used in this method of forming a resist pattern. The method of forming a resist pattern includes: forming a first resist film by applying a first resist composition to a support, forming a first resist pattern by selectively exposing the first resist film through a first mask pattern and then developing the first resist film, forming a second resist film by applying a negative resist composition containing an ether-based organic solvent (S″) having no hydroxyl groups onto the support having the first resist pattern formed thereon, and forming a resist pattern by selectively exposing the second resist film through a second mask pattern and then developing the second resist film.
摘要翻译：形成抗蚀剂图案的厚度损失降低的抗蚀剂图案的新颖方法以及可用于形成抗蚀剂图案的方法中的负型抗蚀剂组合物。形成抗蚀剂图案的方法包括：通过将第一抗蚀剂组合物施加到载体上来形成第一抗蚀剂膜，通过选择性地将第一抗蚀剂膜通过第一掩模图案曝光，然后显影第一抗蚀剂膜，形成第一抗蚀剂图案，形成第一抗蚀剂图案通过在其上形成有第一抗蚀剂图案的载体上涂布含有无羟基的醚类有机溶剂（S“）的负性抗蚀剂组合物，形成第二抗蚀剂膜，并通过选择性地将第二抗蚀剂膜曝光第二掩模图案，然后显影第二抗蚀剂膜。

2. 发明申请

US20090191478A1 METHOD OF FORMING RESIST PATTERN AND NEGATIVE RESIST COMPOSITION 有权
标题翻译：形成电阻图案和负极电阻组合物的方法
公开(公告)号：US20090191478A1
公开(公告)日：2009-07-30
申请号：US12438906
申请日：2007-10-19
申请人： Ken Tanaka , Sho Abe , Shigeru Yokoi
发明人： Ken Tanaka , Sho Abe , Shigeru Yokoi
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/0035 , G03F7/0048 , G03F7/0382 , G03F7/0397 , H01L21/0271 , H01L21/3086 , H01L21/3088
摘要： A novel method of forming a resist pattern in which thickness loss from the resist pattern is reduced, and a negative resist composition that can be used in this method of forming a resist pattern. The method of forming a resist pattern includes: forming a first resist film by applying a first resist composition to a support, forming a first resist pattern by selectively exposing the first resist film through a first mask pattern and then developing the first resist film, forming a second resist film by applying a negative resist composition containing an ether-based organic solvent (S″) having no hydroxyl groups onto the support having the first resist pattern formed thereon, and forming a resist pattern by selectively exposing the second resist film through a second mask pattern and then developing the second resist film.
摘要翻译：形成抗蚀剂图案的厚度损失降低的抗蚀剂图案的新颖方法以及可用于形成抗蚀剂图案的方法中的负型抗蚀剂组合物。形成抗蚀剂图案的方法包括：通过将第一抗蚀剂组合物施加到载体上来形成第一抗蚀剂膜，通过选择性地将第一抗蚀剂膜通过第一掩模图案曝光，然后显影第一抗蚀剂膜，形成第一抗蚀剂图案，形成第一抗蚀剂图案通过将不含羟基的醚类有机溶剂（S“）的负性抗蚀剂组合物涂布在其上形成有第一抗蚀剂图案的载体上，形成第二抗蚀剂膜，并通过选择性地使第二抗蚀剂膜通过第二掩模图案，然后显影第二抗蚀剂膜。

3. 发明授权

US08632960B2 Method of forming resist pattern and negative tone-development resist composition 有权
标题翻译：形成抗蚀剂图案和负色调显影抗蚀剂组合物的方法
公开(公告)号：US08632960B2
公开(公告)日：2014-01-21
申请号：US13028689
申请日：2011-02-16
申请人： Tomoyuki Hirano , Takahiro Dazai , Daiju Shiono , Sho Abe
发明人： Tomoyuki Hirano , Takahiro Dazai , Daiju Shiono , Sho Abe
IPC分类号： G03F7/004 , G03F7/028 , G03F7/039 , G03F7/26
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0046 , G03F7/2041 , G03F7/325
摘要： A method of forming a resist pattern, including: forming a resist film on a substrate using a resist composition containing a base component (A) which exhibits decreased solubility in an organic solvent under action of an acid and an acid-generator component (B) which generates an acid upon exposure, conducting exposure of the resist film, and patterning the resist film by a negative tone development using a developing solution containing an organic solvent, wherein the base component (A) includes a resin component (A1) containing a structural unit (a0) derived from an acrylate ester containing an acid decomposable group which generates an alcoholic hydroxy group by the action of acid to thereby exhibit increased hydrophilicity.
摘要翻译：一种形成抗蚀剂图案的方法，包括：使用含有在酸和酸发生剂组分（B）的作用下在有机溶剂中表现出降低的溶解度的碱成分（A）的抗蚀剂组合物在基材上形成抗蚀剂膜，其在曝光时产生酸，曝光抗蚀剂膜，并使用含有有机溶剂的显影液通过负色调显影对抗蚀剂膜进行图案化，其中所述基础组分（A）包括含有结构单元（a0）衍生自含有通过酸作用产生醇羟基的可酸分解基团的丙烯酸酯，从而表现出增加的亲水性。

4. 发明授权

US08021824B2 Polymer compound, resist composition and method of forming resist pattern 有权
标题翻译：高分子化合物，抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US08021824B2
公开(公告)日：2011-09-20
申请号：US12449547
申请日：2008-02-06
申请人： Jun Iwashita , Sho Abe , Makiko Irie , Takeshi Iwai
发明人： Jun Iwashita , Sho Abe , Makiko Irie , Takeshi Iwai
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , C08F28/02
CPC分类号： C08F220/28 , C08F220/34 , C08F220/38 , G03F7/0382 , G03F7/0397 , Y10S430/111
摘要： A polymer compound including a structural unit (a0) represented by general formula (a0-1) shown below: wherein R1 represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a fluorinated alkyl group of 1 to 5 carbon atoms; R2 and R3 each independently represents a hydrogen atom, an alkyl group or an alkoxy group, or R2 and R3 may be bonded together to form an alkylene group that may include an oxygen atom or sulfur atom at an arbitrary position, —O— or —S—; R4 and R5 each independently represents a hydrogen atom, an alkyl group that may include an oxygen atom at an arbitrary position, a cycloalkyl group that may include an oxygen atom at an arbitrary position or an alkoxycarbonyl group.
摘要翻译：包含如下所示的由通式（a0-1）表示的结构单元（a0）的高分子化合物：其中R1表示氢原子，1〜5个碳原子的烷基或1〜5个碳原子的氟化烷基; R 2和R 3各自独立地表示氢原子，烷基或烷氧基，或者R 2和R 3可以键合在一起形成在任意位置可以包含氧原子或硫原子的亚烷基，-O-或 - S- R 4和R 5各自独立地表示氢原子，可以包含任意位置的氧原子的烷基，可以包含任意位置的氧原子的环烷基或烷氧基羰基。

5. 发明授权

US08541157B2 Resist composition, method of forming resist pattern, compound and acid generator including the same 有权
标题翻译：抗蚀剂组合物，形成抗蚀剂图案的方法，包括其的化合物和酸发生剂
公开(公告)号：US08541157B2
公开(公告)日：2013-09-24
申请号：US12567643
申请日：2009-09-25
申请人： Akiya Kawaue , Yoshiyuki Utsumi , Sho Abe
发明人： Akiya Kawaue , Yoshiyuki Utsumi , Sho Abe
IPC分类号： G03F7/038 , G03F7/039 , G03F7/20 , G03F7/30
CPC分类号： C07C309/10 , C07C309/12 , C07C309/17 , C07C309/19 , C07C309/67 , C07C311/48 , C07C311/51 , C07C381/12 , C07C2601/14 , C07C2602/42 , C07C2603/74 , G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/0397 , G03F7/2041
摘要： A resist composition including a base component (A) which exhibits changed solubility in an alkali developing solution under the action of acid and an acid-generator component (B) which generates acid upon exposure, wherein the acid-generator component (B) includes an acid generator (B1) composed of a compound having a base dissociable group within a cation moiety.
摘要翻译：一种抗蚀剂组合物，其包含在酸性作用下在碱性显影液中溶解度变化的碱成分（A）和曝光时产生酸的酸发生剂成分（B），其中，酸发生剂成分（B）含有酸性发生剂（B1），其由在阳离子部分内具有碱解离基团的化合物组成。

6. 发明申请

US20120214101A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 有权
标题翻译：耐蚀组合物和形成耐力图案的方法
公开(公告)号：US20120214101A1
公开(公告)日：2012-08-23
申请号：US13398555
申请日：2012-02-16
申请人： Hiroaki Shimizu , Sho Abe , Hideto Nito
发明人： Hiroaki Shimizu , Sho Abe , Hideto Nito
IPC分类号： G03F7/20 , G03F7/027
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/0397 , G03F7/2041 , G03F7/30 , G03F7/325 , Y10S430/12 , Y10S430/122 , Y10S430/123
摘要： A resist composition including a base component (A) which exhibits changed solubility in a developing solution under action of acid, a basic-compound component (C) and an acid-generator component (B) which generates acid upon exposure, the component (B) including a compound represented by formula (b1), and the component (C) including at least one compound represented by formulas (c1) to (c3) (wherein Z1 represents a ring skeleton-containing hydrocarbon group, Q1 represents a divalent linking group containing oxygen, Y1 represents a fluorinated alkylene group, M+ represents an organic cation, R1 represents a fluorinated alkyl group or a hydrocarbon group, L1+ and L2+ represents a sulfonium or an iodonium, Z2 represents a hydrogen atom or a hydrocarbon group, Y2 represents a single bond or a divalent linking group containing no fluorine, R2 represents an organic group, Y3 represents an alkylene group or an arylene group; and Rf represents a fluorine-containing hydrocarbon group).
摘要翻译：一种抗蚀剂组合物，其包含在酸作用下在显影液中溶解度变化的碱成分（A），暴露时产生酸的碱性化合物成分（C）和酸发生剂成分（B），成分（B ）和包含式（c1）〜（c3）所示的至少一种化合物的组分（C）（其中Z1表示含环骨架的烃基，Q1表示二价连接基团含有氧的基团，Y 1表示氟化亚烷基，M +表示有机阳离子，R1表示氟代烷基或烃基，L1 +，L2 +表示锍或碘，Z2表示氢原子或烃基，Y2表示单键或不含氟的二价连接基团，R 2表示有机基团，Y 3表示亚烷基或亚芳基，Rf表示含氟烃基）。

7. 发明申请

US20100035192A1 METHOD OF FORMING RESIST PATTERN 失效
标题翻译：形成电阻图案的方法
公开(公告)号：US20100035192A1
公开(公告)日：2010-02-11
申请号：US12533685
申请日：2009-07-31
申请人： Tomoyuki Ando , Sho Abe , Ryoji Watanabe , Komei Hirahara
发明人： Tomoyuki Ando , Sho Abe , Ryoji Watanabe , Komei Hirahara
IPC分类号： G03F7/20
CPC分类号： G03F7/2022 , G03F7/095
摘要： A method of forming a resist pattern including: forming a resist film on a substrate using a chemically amplified negative resist composition; forming a latent image of a first line and space pattern by subjecting the resist film to first exposure through a photomask; forming a latent image of a second line and space pattern so as to intersect with the latent image of the first line and space pattern by subjecting the resist film to second exposure through a photomask; and subjecting the resist film to developing to form a hole pattern in the resist film.
摘要翻译：一种形成抗蚀剂图案的方法，包括：使用化学放大型负性抗蚀剂组合物在基板上形成抗蚀剂膜; 通过使抗蚀剂膜首先通过光掩模曝光来形成第一线和空间图案的潜像; 通过使光刻胶膜通过光掩模进行第二曝光，形成与第一线和空间图案的潜像相交的第二线和空间图案的潜像; 并且使抗蚀剂膜显影以在抗蚀剂膜中形成孔图案。

8. 发明申请

US20090297980A1 Resist composition and method of forming resist pattern 有权
标题翻译：抗蚀剂图案的抗蚀剂组成和方法
公开(公告)号：US20090297980A1
公开(公告)日：2009-12-03
申请号：US12453857
申请日：2009-05-26
申请人： Jun Iwashita , Shogo Matsumaru , Sho Abe
发明人： Jun Iwashita , Shogo Matsumaru , Sho Abe
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0382 , Y10S430/111
摘要： A novel resist composition and method of forming a resist pattern that can be used in lithography applications. The resist composition includes a base component (A) that exhibits changed solubility in an alkali developing solution under action of acid, and an acid generator component (B) that generates acid upon exposure, wherein the base component (A) contains a polymer compound (A1) having a structural unit (a0) represented by general formula (a0-1) shown below, wherein R1 represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a fluorinated alkyl group of 1 to 5 carbon atoms, R2 and R3 each independently represents a hydrogen atom or an alkyl group that may include an oxygen atom at an arbitrary position, or R2 and R3 are bonded together to form an alkylene group, and W represents a cyclic alkylene group that may include an oxygen atom at an arbitrary position.
摘要翻译：形成可用于光刻应用的抗蚀剂图案的新型抗蚀剂组合物和方法。抗蚀剂组合物包括在酸的作用下在碱性显影液中显示改变的溶解性的基础组分（A）和暴露时产生酸的酸产生剂组分（B），其中所述碱性组分（A）含有高分子化合物 A1）具有下述通式（a0-1）表示的结构单元（a0），其中R1表示氢原子，1〜5个碳原子的烷基或1〜5个碳原子的氟化烷基，R2 和R 3各自独立地表示氢原子或可以在任意位置含有氧原子的烷基，或者R 2和R 3结合在一起形成亚烷基，W表示可以包含氧原子的环状亚烷基任意的位置

9. 发明授权

US08034536B2 Resist composition and method of forming resist pattern 有权
标题翻译：抗蚀剂图案的抗蚀剂组成和方法
公开(公告)号：US08034536B2
公开(公告)日：2011-10-11
申请号：US12453857
申请日：2009-05-26
申请人： Jun Iwashita , Shogo Matsumaru , Sho Abe
发明人： Jun Iwashita , Shogo Matsumaru , Sho Abe
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0382 , Y10S430/111
摘要： A novel resist composition and method of forming a resist pattern that can be used in lithography applications. The resist composition includes a base component (A) that exhibits changed solubility in an alkali developing solution under action of acid, and an acid generator component (B) that generates acid upon exposure, wherein the base component (A) contains a polymer compound (A1) having a structural unit (a0) represented by general formula (a0-1) shown below, wherein R1 represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a fluorinated alkyl group of 1 to 5 carbon atoms, R2 and R3 each independently represents a hydrogen atom or an alkyl group that may include an oxygen atom at an arbitrary position, or R2 and R3 are bonded together to form an alkylene group, and W represents a cyclic alkylene group that may include an oxygen atom at an arbitrary position.
摘要翻译：形成可用于光刻应用的抗蚀剂图案的新型抗蚀剂组合物和方法。抗蚀剂组合物包括在酸的作用下在碱性显影液中显示改变的溶解性的基础组分（A）和暴露时产生酸的酸产生剂组分（B），其中所述碱性组分（A）含有高分子化合物 A1）具有下述通式（a0-1）表示的结构单元（a0），其中R1表示氢原子，1〜5个碳原子的烷基或1〜5个碳原子的氟化烷基，R2 和R 3各自独立地表示氢原子或可以在任意位置含有氧原子的烷基，或者R 2和R 3结合在一起形成亚烷基，W表示可以包含氧原子的环状亚烷基任意的位置

10. 发明申请

US20100081088A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR INCLUDING THE SAME 有权
标题翻译：耐蚀组合物，形成耐火图案的方法，包括其的化合物和酸发生器
公开(公告)号：US20100081088A1
公开(公告)日：2010-04-01
申请号：US12567643
申请日：2009-09-25
申请人： Akiya KAWAUE , Yoshiyuki Utsumi , Sho Abe
发明人： Akiya KAWAUE , Yoshiyuki Utsumi , Sho Abe
IPC分类号： G03F7/00 , G03C1/00 , C07C69/007
CPC分类号： C07C309/10 , C07C309/12 , C07C309/17 , C07C309/19 , C07C309/67 , C07C311/48 , C07C311/51 , C07C381/12 , C07C2601/14 , C07C2602/42 , C07C2603/74 , G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/0397 , G03F7/2041
摘要： A resist composition including a base component (A) which exhibits changed solubility in an alkali developing solution under the action of acid and an acid-generator component (B) which generates acid upon exposure, wherein the acid-generator component (B) includes an acid generator (B1) composed of a compound having a base dissociable group within a cation moiety.
摘要翻译：一种抗蚀剂组合物，其包含在酸性作用下在碱性显影液中溶解度变化的碱成分（A）和曝光时产生酸的酸发生剂成分（B），其中，酸发生剂成分（B）含有酸性发生剂（B1），其由在阳离子部分内具有碱解离基团的化合物组成。

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