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    • 6. 发明授权
    • Method for forming a tapered via of a semiconductor device
    • 用于形成半导体器件的锥形通孔的方法
    • US07749901B2
    • 2010-07-06
    • US12300793
    • 2007-11-28
    • Ken OnoderaKazutaka Takagi
    • Ken OnoderaKazutaka Takagi
    • H01L23/522H01L21/768
    • H01L21/3086H01L21/76898H01L2924/0002H01L2924/00
    • A semiconductor device having a VIA hole without disconnection caused by step is achieved.A semiconductor device and its manufacturing method, the semiconductor device comprising: a semi-insulating substrate 11 in which an electrode (12) is formed on a surface (11a) of one side and in which an aperture (11c) passed through from the surface 11a of one side to a surface (11b) of another side is formed; and a conductive layer (17) formed in an inner surface of the aperture (11c), and electrically connected with the electrode (12); wherein the aperture (11c) has a tapered region (11d) where an inside diameter of a part located in the surface (11b) of another side is larger than an inside diameter of a part located in the surface (11a) of one side.
    • 实现了具有由步骤引起的不断开的VIA孔的半导体器件。 一种半导体器件及其制造方法,所述半导体器件包括:半绝缘基板11,其中电极(12)形成在一侧的表面(11a)上,并且其中从所述表面穿过的孔(11c) 形成另一侧的表面(11b)的一侧的11a; 以及形成在所述孔(11c)的内表面中并与所述电极(12)电连接的导电层(17)。 其中,所述孔(11c)具有锥形区域(11d),其中位于另一侧的表面(11b)中的部分的内径大于位于一侧的表面(11a)中的部分的内径。