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    • 2. 发明申请
    • DISPLAY DEVICE
    • 显示设备
    • US20080225191A1
    • 2008-09-18
    • US12014125
    • 2008-01-15
    • Ken OharaTsunenori YamamotoYoshiaki NakayoshiHiroshi SaitoJun Ooida
    • Ken OharaTsunenori YamamotoYoshiaki NakayoshiHiroshi SaitoJun Ooida
    • G02F1/133H01L27/088
    • H01L27/1237G02F1/133371H01L27/1214H01L27/124
    • A display device which can reduce easily the brightness unevenness produced by the insufficient writing of TFT, wherein, the display device having: a display panel which, over a surface of an insulating substrate, includes plural scanning signal lines; plural picture signal lines; plural TFTs; plural pixel electrodes coupled to sources of the TFTs; and a counter electrode, wherein the pixel and counter electrodes are arranged over the same surface of an insulating layer overlying the surface of the insulating substrate, and when a gate insulating film provided at one TFT among the TFTs is thinner than a gate insulating film provided at another TFT among the TFTs, a gap between a pixel electrode coupled to the source of the one TFT and the counter electrode is set to be wider than a gap between a pixel electrode coupled to the source of the another TFT and the counter electrode.
    • 一种可以容易地减少TFT写入不足产生的亮度不均匀的显示装置,其中,具有:在绝缘基板的表面上方包括多条扫描信号线的显示面板的显示装置; 多幅图像信号线; 多个TFT; 耦合到TFT的源极的多个像素电极; 以及对电极,其中,所述像素和对置电极布置在覆盖所述绝缘基板的表面的绝缘层的相同表面上,并且当设置在所述TFT中的一个TFT处的栅极绝缘膜比设置的栅极绝缘膜薄时 在TFT之间的另一TFT处,耦合到一个TFT的源极的像素电极和对电极之间的间隙被设定为比与另一TFT的源极和对电极耦合的像素电极之间的间隙宽。
    • 7. 发明授权
    • Liquid crystal display device and display device
    • 液晶显示装置及显示装置
    • US07595506B2
    • 2009-09-29
    • US11375108
    • 2006-03-15
    • Ken OharaJun OoidaHiroshi SaitoYoshiaki Nakayoshi
    • Ken OharaJun OoidaHiroshi SaitoYoshiaki Nakayoshi
    • H01L29/06
    • H01L27/1296G02F1/136227
    • The present invention provides a technique which can make an image quality on a screen of a TFT liquid crystal display device uniform. A liquid crystal display device includes a TFT substrate on which TFT circuits are arranged in an array, a counter substrate which is arranged to face a surface of the TFT substrate on which the TFTs are formed, and a liquid crystal material which is filled between the TFT substrate and the counter substrate, wherein in the TFT substrate, assuming a film thickness and a width of a conductive film of the gate electrode lines in a first region thereof as GLD1 and GLW1 respectively, and a film thickness and a width of a conductive film of the gate electrode lines in a second region thereof which differs from the first region as GLD2 and GLW2 respectively, when the relationship GLD1 GLW2 is established.
    • 本发明提供能够使TFT液晶显示装置的画面上的图像质量均匀的技术。 一种液晶显示装置,其特征在于,具备以TFT阵列为阵列的TFT基板,配置在与形成有TFT的TFT基板的表面相对的对置基板, TFT基板和对置基板,其中在TFT基板中,将栅极电极线的第一区域的导电膜的膜厚度和宽度分别设为GLD1和GLW1,并且膜厚度和导电宽度 当第一区域与GLD2和GLW2分别不同时,栅极电极线的第二区域的膜分别为GLD1 GLW2。
    • 9. 发明申请
    • Liquid crystal display device and display device
    • 液晶显示装置及显示装置
    • US20060220024A1
    • 2006-10-05
    • US11375108
    • 2006-03-15
    • Ken OharaJun OoidaHiroshi SaitoYoshiaki Nakayoshi
    • Ken OharaJun OoidaHiroshi SaitoYoshiaki Nakayoshi
    • H01L29/04
    • H01L27/1296G02F1/136227
    • The present invention provides a technique which can make an image quality on a screen of a TFT liquid crystal display device uniform. A liquid crystal display device includes a TFT substrate on which TFT circuits are arranged in an array, a counter substrate which is arranged to face a surface of the TFT substrate on which the TFTs are formed, and a liquid crystal material which is filled between the TFT substrate and the counter substrate, wherein in the TFT substrate, assuming a film thickness and a width of a conductive film of the gate electrode lines in a first region thereof as GLD1 and GLW1 respectively, and a film thickness and a width of a conductive film of the gate electrode lines in a second region thereof which differs from the first region as GLD2 and GLW2 respectively, when the relationship GLD1 GLW2 is established.
    • 本发明提供能够使TFT液晶显示装置的画面上的图像质量均匀的技术。 一种液晶显示装置,其特征在于,具备以TFT阵列为阵列的TFT基板,配置在与形成有TFT的TFT基板的表面相对的对置基板, TFT基板和对置基板,其中在TFT基板中,将栅电极线的导电膜的第一区域的膜厚度和宽度分别设为GLD 1和GLW 1,并且膜厚度和宽度 当GLD 1 GLW2。