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    • 3. 发明授权
    • Semiconductor device and method for manufacturing same
    • 半导体装置及其制造方法
    • US07981811B2
    • 2011-07-19
    • US12508888
    • 2009-07-24
    • Shigeru MoriTakahiro KorenariTadahiro MatsuzakiHiroshi Tanabe
    • Shigeru MoriTakahiro KorenariTadahiro MatsuzakiHiroshi Tanabe
    • H01L21/31
    • H01L29/78621H01L29/66757
    • A base layer is formed on an insulating substrate, and a semiconductor layer is formed in localized fashion thereon. A gate insulating film is then formed so as to cover the semiconductor layer, and a gate electrode is formed on a portion of the gate insulating film. An impurity is then implanted into the semiconductor layer via the gate insulating film, and a source region, a drain region, and an LDD region are formed. The gate insulating film is etched with dilute hydrofluoric acid. An electrode-protecting insulating film is then formed so as to cover the gate electrode, and the entire surface of the surface layer portion of the electrode-protecting insulating film is etched away using dilute hydrofluoric acid. Carrier traps introduced into the electrode-protecting insulating film and the gate insulating film are thereby removed.
    • 在绝缘基板上形成基底层,以局部方式形成半导体层。 然后形成栅极绝缘膜以覆盖半导体层,并且栅极电极形成在栅极绝缘膜的一部分上。 然后通过栅极绝缘膜将杂质注入到半导体层中,形成源极区,漏极区和LDD区。 用稀氢氟酸蚀刻栅极绝缘膜。 然后形成电极保护绝缘膜以覆盖栅电极,并且使用稀氢氟酸腐蚀掉电极保护绝缘膜的表面层部分的整个表面。 因此,引入到电极保护绝缘膜和栅极绝缘膜中的载流子阱被去除。