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1. 发明授权

US4600671A Photoconductive member having light receiving layer of A-(Si-Ge) and N 失效
标题翻译：具有A（Si-Ge）和N的光接收层的感光体
公开(公告)号：US4600671A
公开(公告)日：1986-07-15
申请号：US648267
申请日：1984-09-07
申请人： Keishi Saitoh , Yukihiko Ohnuki , Shigeru Ohno
发明人： Keishi Saitoh , Yukihiko Ohnuki , Shigeru Ohno
IPC分类号： G03G5/082 , H01L31/09
CPC分类号： G03G5/08228 , H01L31/095
摘要： A photoconductive member comprises a substrate for the photoconductive member and a light receiving layer exhibiting photoconductivity provided on said substrate comprising an amorphous material containing silicon atoms and germanium atoms, the light receiving lager having a layer region (N) containing nitrogen atoms, and the layer region (N) having a region (X) in which the content C (N) of nitrogen atoms in the layer thickness direction smoothly and continuously increases toward the upper surface of the light receiving layer.
摘要翻译：光电导元件包括用于光电导元件的衬底和在所述衬底上显示光电导率的光接收层，该光接收层包括含有硅原子和锗原子的无定形材料，所述光接收器具有含有氮原子的层区域（N），并且所述层具有层厚度方向上的氮原子的含量C（N）朝向光接收层的上表面平滑且连续地增加的区域（X）的区域（N）。

2. 发明授权

US4592983A Photoconductive member having amorphous germanium and amorphous silicon regions with nitrogen 失效
标题翻译：具有无定形锗和具有氮的非晶硅区域的感光体
公开(公告)号：US4592983A
公开(公告)日：1986-06-03
申请号：US647791
申请日：1984-09-06
申请人： Keishi Saitoh , Yukihiko Ohnuki , Shigeru Ohno
发明人： Keishi Saitoh , Yukihiko Ohnuki , Shigeru Ohno
IPC分类号： G03G5/082
CPC分类号： G03G5/08242 , G03G5/08228 , G03G5/08292
摘要： A photoconductive member comprises a substrate for photoconductive member and a light receiving layer having a layer constitution in which a first layer region (G) comprising an amorphous material containing germanium atoms and a second layer region (S) exhibiting photoconductivity comprising an amorphous material containing silicon atoms are successively provided from the substrate side, said light receiving layer containing carbon atoms.
摘要翻译：光电导元件包括用于光电导元件的衬底和具有层结构的光接收层，其中包含含有锗原子的非晶态材料的第一层区域（G）和显示光电导率的第二层区域（S），其包含含硅的非晶材料原子从衬底侧连续提供，所述光接收层含有碳原子。

3. 发明授权

US4592979A Photoconductive member of amorphous germanium and silicon with nitrogen 失效
标题翻译：无定形锗和硅氮化物的导电元件
公开(公告)号：US4592979A
公开(公告)日：1986-06-03
申请号：US647730
申请日：1984-09-06
申请人： Keishi Saitoh , Yukihiko Ohnuki , Shigeru Ohno
发明人： Keishi Saitoh , Yukihiko Ohnuki , Shigeru Ohno
IPC分类号： G03G5/082 , H01L31/09
CPC分类号： G03G5/08228 , G03G5/08242 , H01L31/095
摘要： A photoconductive member comprises a substrate for photoconductive member and a light receiving layer having photoconductivity comprising an amorphous material containing silicon atoms and germanium atoms, said light receiving layer containing nitrogen atoms and having a first layer region, a third layer region and a second layer region with the nitrogen atom content in the layer thickness direction of C(1), C(3) and C(2), respectively, in the order from the substrate side (with the proviso that when C(3) cannot solely be the maximum and either one of C(1) and C(2) is zero, the other two are not zero and not equal to each other, or when C(3) is zero, the other two are not zero, or when none of C(1), C(2) and C(3) is zero, the three of C(1), C(2) and C(3) cannot be equal at the same time and C(3) cannot solely be the maximum).
摘要翻译：光电导元件包括用于光电导元件的衬底和具有光电导率的光接收层，该光接收层包括含有硅原子和锗原子的非晶态材料，所述光接收层含有氮原子并具有第一层区域，第三层区域和第二层区域分别以C（1），C（3）和C（2）的层厚度方向的氮原子含量按衬底侧的顺序（条件是当C（3）不能仅为最大值时并且C（1）和C（2）中的任一个为零，另外两个不为零并且不相等，或者当C（3）为零时，另外两个不为零，或者当C （1），C（2）和C（3）为零，C（1），C（2）和C（3）中的三个不能同时相等，C（3）不能仅仅是最大值）。

4. 发明授权

US4579798A Amorphous silicon and germanium photoconductive member containing carbon 失效
标题翻译：含碳的非晶硅和锗光导体
公开(公告)号：US4579798A
公开(公告)日：1986-04-01
申请号：US647745
申请日：1984-09-06
申请人： Keishi Saitoh , Yukihiko Ohnuki , Shigeru Ohno
发明人： Keishi Saitoh , Yukihiko Ohnuki , Shigeru Ohno
IPC分类号： G03G5/082
CPC分类号： G03G5/08228 , G03G5/08242
摘要： A photoconductive member comprises a support for a photoconductive member and a light receiving layer constituted of a first layer region (G) comprising an amorphous material containing silicon atoms and germanium atoms and a second layer region (S) comprising an amorphous material containing silicon atoms and exhibiting photoconductivity, the first layer region (G) and the second layer region (S) being provided in the mentioned order on the support, the distribution of germanium atoms in the first layer region (G) being ununiform in the direction of layer thickness, and carbon atoms being contained in the light receiving layer.A photoconductive member comprises a support for a photoconductive member and a light receiving layer comprising a first layer constituted of a first layer region (G) comprising an amorphous material containing silicon atoms and germanium atoms and a second layer region (S) comprising an amorphous material containing silicon atoms and exhibiting photoconductivity, the first layer region (G) and the second layer region (S) being provided in the mentioned order on the support, and a second layer comprising an amorphous material containing silicon atoms as the matrix and at least one of nitrogen atoms and oxygen atoms, the distribution of germanium atoms in the first layer region (G) being ununiform in the direction of layer thickness, and carbon atoms being contained in the first layer.
摘要翻译：感光构件包括用于感光构件的支撑体和由包含硅原子和锗原子的非晶体材料的第一层区域（G）和包含含硅原子的非晶态材料的第二层区域（S）构成的光接收层，表现出光电导性，第一层区域（G）和第二层区域（S）按照上述顺序设置在载体上，第一层区域（G）中的锗原子在层厚度方向上的分布不均匀，并且碳原子包含在光接收层中。感光构件包括用于光电导构件的支撑体和包含由包含硅原子和锗原子的非晶体材料的第一层区域（G）构成的第一层的光接收层和包含非晶态材料的第二层区域（S）含有硅原子并具有光电导性，第一层区域（G）和第二层区域（S）以上述顺序提供在载体上，第二层包含含有硅原子作为基体的无定形材料和至少一个的氮原子和氧原子，第一层区域（G）中的锗原子在层厚度方向上的分布不均匀，并且第一层中包含碳原子。

5. 发明授权

US4592982A Photoconductive member of layer of A-Ge, A-Si increasing (O) and layer of A-Si(C) or (N) 失效
标题翻译： A-Ge，A-Si增加（O）和A-Si（C）或（N）层的光导体，
公开(公告)号：US4592982A
公开(公告)日：1986-06-03
申请号：US665981
申请日：1984-10-29
申请人： Keishi Saitoh , Yukihiko Ohnuki , Shigeru Ohno
发明人： Keishi Saitoh , Yukihiko Ohnuki , Shigeru Ohno
IPC分类号： G03G5/082
CPC分类号： G03G5/08292 , G03G5/08228 , G03G5/08242
摘要： A photoconductive member is provided which has a substrate for photoconductive member, and a light-receiving layer comprising (1) a first layer with a layer constitution in which a first layer region (G) comprising an amorphous material containing germanium atoms and a second layer region (S) exhibiting photoconductivity comprising an amorphous material containing silicon atoms are successively provided on said substrate from the aforesaid substrate side, and (2) a second layer comprising an amorphous material containing silicon atoms and at least one of carbon atoms and nitrogen atoms, said first layer having a layer region (O) containing oxygen atoms, wherein the depth profile of oxygen atoms in the layer thickness direction in said layer region (O) is increased smoothly and continuously toward the upper end surface of the first layer.
摘要翻译：提供了一种感光构件，其具有用于光电导构件的衬底和光接收层，其包括（1）具有层结构的第一层，其中包含含有锗原子的非晶态材料的第一层区域（G）和第二层包含含有硅原子的非晶态材料的光电导率的区域（S）从上述衬底侧依次设置在所述衬底上，（2）第二层，其包含含有硅原子和至少一个碳原子和氮原子的无定形材料，所述第一层具有含有氧原子的层区域（O），其中所述层区域（O）中的层厚度方向上的氧原子的深度分布向第一层的上端面平滑且连续地增加。

6. 发明授权

US4587190A Photoconductive member comprising amorphous silicon-germanium and nitrogen 失效
标题翻译：包含非晶硅 - 锗和氮的感光体
公开(公告)号：US4587190A
公开(公告)日：1986-05-06
申请号：US646301
申请日：1984-08-31
申请人： Keishi Saitoh , Yukihiko Ohnuki , Shigeru Ohno
发明人： Keishi Saitoh , Yukihiko Ohnuki , Shigeru Ohno
IPC分类号： G03G5/082 , H01L31/09 , G03G5/02 , G03G5/08
CPC分类号： H01L31/095 , G03G5/08228
摘要： A photoconductive member comprises a substrate and a light receiving layer having photoconductivity which comprises an amorphous material containing silicon atoms and germanium atoms, the germanium atoms being distributed non-uniformly in the layer thickness direction in the light receiving layer and nitrogen atoms being contained in the light receiving layer.
摘要翻译：光电导元件包括基片和具有光电导率的光接收层，该光接收层包括含有硅原子和锗原子的非晶态材料，锗原子在光接收层中的层厚度方向上分布不均匀，氮原子包含在光接收层。

7. 发明授权

US4585719A Photoconductive member comprising (SI-GE)-SI and N 失效
标题翻译：包含（SI-GE）-SI和N
公开(公告)号：US4585719A
公开(公告)日：1986-04-29
申请号：US646511
申请日：1984-08-31
申请人： Keishi Saitoh , Yukihiko Ohnuki , Shigeru Ohno
发明人： Keishi Saitoh , Yukihiko Ohnuki , Shigeru Ohno
IPC分类号： G03G5/082 , H01L31/09 , G03G5/14
CPC分类号： H01L31/095 , G03G5/08228
摘要： A photoconductive member comprises a support for a photoconductive member and a light receiving layer overlaying the support comprising a first layer region (G) comprising an amorphous material containing silicon atoms and germanium atoms and a second layer (S) exhibiting photoconductivity comprising an amorphous material containing silicon atoms, the first layer region (G) and the second layer region (S) being provided in this order from the support side, and the distribution of germanium atoms in the said first layer (G) being not uniform in the layer thickness direction and nitrogen atoms being contained in the light receiving layer. There may be provided on the light receiving layer a layer comprising an amorphous material containing silicon atoms and at least one of carbon atoms and oxygen atoms.
摘要翻译：感光构件包括用于光电导构件的支撑体和覆盖支撑体的光接收层，所述光接收层包括包括含有硅原子和锗原子的非晶态材料的第一层区域（G）和显示光电导性的第二层（S），所述第二层包含含有硅原子，第一层区域（G）和第二层区域（S）从支撑侧依次提供，并且所述第一层（G）中的锗原子在层厚度方向上的分布不均匀并且氮原子包含在光接收层中。可以在光接收层上设置包含含有硅原子和至少一个碳原子和氧原子的无定形材料的层。

8. 发明授权

US4569893A Amorphous matrix of silicon and germanium having controlled conductivity 失效
标题翻译：具有受控导电性的硅和锗的非晶矩阵
公开(公告)号：US4569893A
公开(公告)日：1986-02-11
申请号：US644521
申请日：1984-08-27
申请人： Keishi Saitoh , Yukihiko Ohnuki , Shigeru Ohno
发明人： Keishi Saitoh , Yukihiko Ohnuki , Shigeru Ohno
IPC分类号： G03G5/082 , G03G5/06
CPC分类号： G03G5/08228
摘要： A photoconductive member comprises a substrate for photoconductive member and a light receiving layer provided on said substrate having a layer consititution in which a first layer region (G) comprising an amorphous material containing germanium atoms and a second layer region (S) exhibiting photoconductivity comprising an amorphous material containing silicon atoms are successively provided from the substrate side, said light receiving layer containing oxygen atoms together with a substance for controlling conductivity (C) in a distributed state such that, in said light receiving layer, the maximum value C(PN).sub.max of the content of said substance (C) in the layer thickness direction exists within said second layer region (S) or at the interface with said first layer region (G) and, in said second layer region(S), said substance (C) is distributed in greater amount on the side of said substrate.
摘要翻译：感光体包括用于光导体的衬底和设置在所述衬底上的光接收层，该光接收层具有一层，其中包含含有锗原子的非晶态材料的第一层区域（G）和表现出光电导性的第二层区域（S）含有硅原子的非晶质材料从基板侧依次提供，所述光接收层与分布状态下的含有氧原子的物质一起控制导电性（C），使得在所述光接收层中，最大值C（PN）所述物质（C）在层厚度方向上的含量的最大值存在于所述第二层区域（S）内或与所述第一层区域（G）的界面处，并且在所述第二层区域（S）中，所述物质（ C）在所述衬底的侧面上分布更多。

9. 发明授权

US4642277A Photoconductive member having light receiving layer of A-Ge/A-Si and C 失效
标题翻译：具有A-Ge / A-Si和C的光接收层的感光体
公开(公告)号：US4642277A
公开(公告)日：1987-02-10
申请号：US663965
申请日：1984-10-23
申请人： Keishi Saitoh , Yukihiko Ohnuki , Shigeru Ohno
发明人： Keishi Saitoh , Yukihiko Ohnuki , Shigeru Ohno
IPC分类号： G03G5/082 , G03G5/085
CPC分类号： G03G5/08228
摘要： A photoconductive member is provided which has substrate for photoconductive member and a light-receiving layer having photoconductivity with a layer constitution in which a first layer region (G) comprising an amorphous material containing germanium atoms and a second layer region (S) exhibiting photoconductivity consisting of an amorphous material containing silicon atoms are successively provided from the aforesaid substrate side, said light-receiving layer containing carbon atoms together with a substance (C) for controlling conductivity in a distribution state such that, in said light-receiving layer, the maximum value C(PN).sub.max of the distribution concentration of said substance (c) in the layer thickness direction exists within said second layer region (S) and, in said second layer region (S), said substance (C) is distributed in greater amount on the side of said substrate.
摘要翻译：提供了一种光电导元件，其具有用于光电导元件的基底和具有光导电性的光接收层，该光接收层具有层结构，其中包含含有锗原子的非晶态材料的第一层区域（G）和显示光电导性的第二层区域（S）含有硅原子的非晶质材料从上述基底侧连续提供，所述光接收层含有碳原子和物质（C），用于在分布状态下控制导电性，使得在所述光接收层中，最大所述物质（c）在层厚度方向上的分布浓度的值C（PN）max存在于所述第二层区域（S）内，并且在所述第二层区域（S）中，所述物质（C）分布得更大量在所述衬底的一侧。

10. 发明授权

US4585720A Photoconductive member having light receiving layer of a-(Si-Ge) and C 失效
标题翻译：具有 - （Si-Ge）和C的光接收层的感光体
公开(公告)号：US4585720A
公开(公告)日：1986-04-29
申请号：US649713
申请日：1984-09-12
申请人： Keishi Saitoh , Yukihiko Ohnuki , Shigeru Ohno
发明人： Keishi Saitoh , Yukihiko Ohnuki , Shigeru Ohno
IPC分类号： G03G5/082 , G03G5/085
CPC分类号： G03G5/08242 , G03G5/08228
摘要： A photoconductive member comprises a substrate, a layer composed of an amorphous material comprising Si and Ge, said layer having a layer region (C) containing carbon atoms. The layer region (C) has a region (X) where the concentration of carbon atoms increases in the direction of layer thickness toward the upper surface of said layer.An amorphous layer of silicon containing at least one of nitrogen and oxygen may overlie said layer.
摘要翻译：感光构件包括基底，由包含Si和Ge的无定形材料构成的层，所述层具有含有碳原子的层区域（C）。层区域（C）具有其中碳原子浓度朝向所述层的上表面的层厚度方向增加的区域（X）。含有氮和氧中的至少一种的硅的非晶层可以覆盖在所述层上。

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