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1. 发明授权

US5120667A Process for fabricating a thin film transistor 失效
标题翻译：制造薄膜晶体管的工艺
公开(公告)号：US5120667A
公开(公告)日：1992-06-09
申请号：US778750
申请日：1991-10-18
申请人： Keiji Tarui , Tatsuo Morita , Shuhei Tsuchimoto
发明人： Keiji Tarui , Tatsuo Morita , Shuhei Tsuchimoto
IPC分类号： H01L21/3213 , H01L21/336 , H01L21/77 , H01L21/84
CPC分类号： H01L29/66757 , H01L21/32137 , H01L27/1214
摘要： A TFTs fabricating process practicable at a low temperature, which includes the steps of forming a multi-layer body on a substrate, the multi-layer body including a semiconductor layer, a gate insulating layer and a lower thin layer, patterning the multi-layer body into islands, thereby removing the other portions of the multi-layer body, forming an insulating layer on the sides of the island-patterned multi-layered portion by etching at a selective ratio between the constituents of the insulating layer and the lower thin layer, forming an upper thin layer, and etching the upper and lower thin layers into upper and lower gate electrodes by use of one resist pattern.

2. 发明授权

US5393986A Ion implantation apparatus 失效
标题翻译：离子注入装置
公开(公告)号：US5393986A
公开(公告)日：1995-02-28
申请号：US942663
申请日：1992-09-09
申请人： Atsushi Yoshinouchi , Tatsuo Morita , Shuhei Tsuchimoto
发明人： Atsushi Yoshinouchi , Tatsuo Morita , Shuhei Tsuchimoto
IPC分类号： C23C14/48 , C23C14/54 , H01J37/05 , H01J37/244 , H01J37/317 , H01L21/265
CPC分类号： H01J37/244 , H01J37/3171 , H01J2237/24485 , H01J2237/2449 , H01J2237/24507 , H01J2237/24585
摘要： An ion implantation apparatus having a plasma source for generating ions, an ion accelerator for accelerating the generated ions, and a substrate holder provided on a position which the accelerated ions irradiate, wherein a current density of a desired kind of ions is measured by an electromagnetic ion energy analyzer having an electric field and a magnetic field, thereby controlling a dose of the ions.
摘要翻译：具有用于产生离子的等离子体源的离子注入装置，用于加速产生的离子的离子加速器以及设置在加速离子照射的位置上的基板保持器，其中通过电磁测量所需种类的离子的电流密度离子能量分析仪具有电场和磁场，从而控制离子的剂量。

3. 发明授权

US5403756A Method of producing a polycrystalline semiconductor film without annealing, for thin film transistor 失效
标题翻译：制造多晶半导体膜而不进行退火的方法，用于薄膜晶体管
公开(公告)号：US5403756A
公开(公告)日：1995-04-04
申请号：US158592
申请日：1993-11-24
申请人： Atsushi Yoshinouchi , Tatsuo Morita , Shuhei Tsuchimoto , Yasuaki Murata
发明人： Atsushi Yoshinouchi , Tatsuo Morita , Shuhei Tsuchimoto , Yasuaki Murata
IPC分类号： H01L21/30 , H01L21/3215 , H01L21/336 , H01L21/266
CPC分类号： H01L29/66757 , H01L21/3003 , H01L21/32155
摘要： A method for producing a polycrystalline semiconductor film is disclosed. The method includes the steps of: forming a semiconductor film on a substrate; forming a passivation film on the semiconductor film; exciting a mixed gas including hydrogen and at least one element selected from the group consisting of the III, IV, and V groups of the periodic table to generate hydrogen ions and ions of the at least one element; and implanting the hydrogen ions into the semiconductor film through the passivation film and simultaneously implanting the ions of the at least one element into the semiconductor film through the passivation film, thereby changing the semiconductor film into a polycrystalline semiconductor film having the at least one element.
摘要翻译：公开了一种多晶半导体膜的制造方法。该方法包括以下步骤：在衬底上形成半导体膜; 在半导体膜上形成钝化膜; 激发包括氢和选自周期表的III，IV和V族的至少一种元素的混合气体，以产生至少一种元素的氢离子和离子; 以及通过钝化膜将氢离子注入到半导体膜中，同时通过钝化膜将至少一种元素的离子注入到半导体膜中，从而将半导体膜改变成具有至少一种元素的多晶半导体膜。

4. 发明授权

US5585817A Apparatus and a method for inputting/outputting an image 失效
标题翻译：用于输入/输出图像的装置和方法
公开(公告)号：US5585817A
公开(公告)日：1996-12-17
申请号：US63951
申请日：1993-05-20
申请人： Masataka Itoh , Tatsuo Morita , Shuhei Tsuchimoto
发明人： Masataka Itoh , Tatsuo Morita , Shuhei Tsuchimoto
IPC分类号： G02F1/133 , G02F1/135 , G09G3/36 , H01L27/146 , H04N1/028
CPC分类号： H04N1/02805 , G02F1/1354 , H04N1/028
摘要： A device and a method for inputting/outputting an image are disclosed. The device includes: an image display section which selectively transmits light; and an image input section having a photodetective portion for converting part of the light which has been transmitted through the image display section and reflected from an original surface to be imaged, into an electric signal. The method is performed by using the device.
摘要翻译：公开了一种用于输入/输出图像的装置和方法。该装置包括：选择性地透射光的图像显示部; 以及图像输入部分，具有用于将已经透过图像显示部分并被从要成像的原始表面反射的部分光转换为电信号的光电检测部分。该方法通过使用该装置来执行。

5. 发明授权

US5504020A Method for fabricating thin film transistor 失效
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US5504020A
公开(公告)日：1996-04-02
申请号：US307068
申请日：1994-09-16
申请人： Shigeru Aomori , Atsushi Yoshinouchi , Keiji Tarui , Tatsuo Morita
发明人： Shigeru Aomori , Atsushi Yoshinouchi , Keiji Tarui , Tatsuo Morita
IPC分类号： H01L21/266 , H01L21/223 , H01L21/265 , H01L21/30 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/78 , H01L29/786
CPC分类号： H01L29/78675 , H01L21/2236 , H01L21/3003 , H01L27/1214 , H01L29/66757 , H01J2237/31701
摘要： A method for fabricating a thin film transistor includes the steps of: forming a semiconductor layer and a gate electrode on an insulating substrate with a gate insulating film interposed therebetween; and implanting an impurity element into a surface of the semiconductor layer by accelerating hydrogen ions and ions of an element of the group III or the group V of the periodic table using at least one of the gate electrode and a resist mask used for forming the gate electrode as a mask, so as to perform both formation of source and drain regions and hydrogenation of a channel region, wherein the concentration of hydrogen ions in the channel region of the semiconductor layer is regulated in the range of 1.times.10.sup.19 ions/cm.sup.3 to 1.times.10.sup.20 ions/cm.sup.3.
摘要翻译：一种制造薄膜晶体管的方法包括以下步骤：在绝缘基板上形成半导体层和栅电极，其间插有栅绝缘膜; 以及通过使用用于形成栅极的栅电极和抗蚀剂掩模中的至少一个来加速元素周期表中第III族元素或第V族元素的氢离子和离子，将杂质元素注入到半导体层的表面中电极作为掩模，以便同时进行源区和漏区的形成和沟道区的氢化，其中半导体层的沟道区中的氢离子的浓度在1×1019离子/ cm 3至1×1020离子的范围内 / cm3。

6. 发明授权

US5183725A Electrode pattern forming method 失效
标题翻译：电极图案形成方法
公开(公告)号：US5183725A
公开(公告)日：1993-02-02
申请号：US592443
申请日：1990-10-01
申请人： Hiromi Nishino , Keiji Tarui , Hideyuki Toyoshi , Tatsuo Morita
发明人： Hiromi Nishino , Keiji Tarui , Hideyuki Toyoshi , Tatsuo Morita
IPC分类号： G02F1/1343 , G03F7/30 , H01L31/18
CPC分类号： H01L31/1884 , G02F1/13439 , G03F7/30 , Y02E10/50
摘要： An electrode pattern forming method comprising the steps of: forming a transparent conductive film on a substrate, covering said transparent conductive film with an aluminum film, forming a resist material film for etching on said aluminum film, exposing said resist material film followed by developing by immersing said substrate in an electrolyte to form a resist pattern, and patterning said aluminum film using said resist pattern as a mask;the formation of said resist pattern in said electrolyte being conducted with another transparent conductive film which is in direct contact with said electrolyte and electrically connected to said aluminum film.

7. 发明授权

US08248042B2 Power converter 有权
标题翻译：电源转换器
公开(公告)号：US08248042B2
公开(公告)日：2012-08-21
申请号：US13336621
申请日：2011-12-23
申请人： Tatsuo Morita
发明人： Tatsuo Morita
IPC分类号： G05F1/00 , H02M7/5387
CPC分类号： H01L29/7787 , H01L27/0617 , H01L27/088 , H01L29/0692 , H01L29/0696 , H01L29/1066 , H01L29/2003 , H01L29/402 , H01L29/41758 , H01L29/423 , H01L29/432 , H02M7/003 , Y02B70/1483
摘要： A power converter includes an input terminal configured to be connected to a power supply, an output terminal, and a first switching element coupled between the input terminal and the output terminal. The first switching element includes a semiconductor multilayer structure formed on a substrate and made of a nitride semiconductor, a gate electrode formed on the semiconductor multilayer structure, a first and a second ohmic electrode, and a back electrode formed on a back surface of the substrate. A potential is supplied from the power supply connected to the input terminal to the back electrode so that a potential difference between the back surface and the second ohmic electrode is reduced. When the first switching element is in the on-state, a positive voltage bias is applied to the back electrode.
摘要翻译：功率转换器包括被配置为连接到电源，输出端子和耦合在输入端子和输出端子之间的第一开关元件的输入端子。第一开关元件包括形成在衬底上并由氮化物半导体形成的半导体多层结构，形成在半导体多层结构上的栅电极，第一和第二欧姆电极以及形成在衬底的背面上的背电极。从连接到输入端子的电源向背面电极提供电位，使得背面与第二欧姆电极之间的电位差减小。当第一开关元件处于导通状态时，正电压偏压被施加到背电极。

8. 发明申请

US20100207164A1 FIELD EFFECT TRANSISTOR 审中-公开
标题翻译：场效应晶体管
公开(公告)号：US20100207164A1
公开(公告)日：2010-08-19
申请号：US12682007
申请日：2009-08-07
申请人： Daisuke Shibata , Tatsuo Morita , Yasuhiro Uemoto
发明人： Daisuke Shibata , Tatsuo Morita , Yasuhiro Uemoto
IPC分类号： H01L29/772
CPC分类号： H01L29/7787 , H01L29/1066 , H01L29/1075 , H01L29/2003 , H01L29/41766
摘要： A field effect transistor includes a first nitride semiconductor layer 13 and a second nitride semiconductor layer 14 having a band gap larger than that of the first nitride semiconductor layer 13 which are formed in this order in an upward direction on a conductive substrate 11, a source electrode 15 and a drain electrode 16 which are electrically connected to a two-dimensional electron gas layer 21, and a gate electrode 18. A rise voltage of a drain-substrate current is lower than a rise voltage of a drain-gate current and a rise voltage of a drain-source current.
摘要翻译：场效应晶体管包括第一氮化物半导体层13和具有大于第一氮化物半导体层13的带隙的第二氮化物半导体层14，该第二氮化物半导体层14在导电基板11上沿向上方向依次形成，源极与二维电子气体层21电连接的电极15和漏电极16以及栅极电极18.漏极 - 基板电流的上升电压低于漏极 - 栅极电流的上升电压，并且漏 - 源电流的上升电压。

9. 发明授权

US07728359B2 Nitride semiconductor based bipolar transistor and the method of manufacture thereof 有权
标题翻译：氮化物半导体双极晶体管及其制造方法
公开(公告)号：US07728359B2
公开(公告)日：2010-06-01
申请号：US11812591
申请日：2007-06-20
申请人： Tatsuo Morita , Tetsuzo Ueda
发明人： Tatsuo Morita , Tetsuzo Ueda
IPC分类号： H01L51/00
CPC分类号： H01L29/2003 , H01L29/201 , H01L29/66318 , H01L29/7371
摘要： In a nitride semiconductor based bipolar transistor, a contact layer formed so as to contact an emitter layer is composed of n-type InAlGaN quaternary mixed crystals, the emitter layer and the contact layer are selectively removed so that the barrier height with the emitter formed thereon is small, and the ohmic electrode contact resistance can be lowered on the InAlGaN quaternary mixed crystals, for example, so that a WSi emitter electrode becomes an eave. A base electrode is formed by a self-aligned process using the emitter electrode as a mask. By such a configuration, the distance between the emitter and the edge of the base electrode is sufficiently shortened, and the base resistance can be lowered. As a result, a bipolar transistor having favorable high-frequency characteristics can be realized.
摘要翻译：在基于氮化物半导体的双极型晶体管中，形成为与发射极层接触的接触层由n型InAlGaN四元混晶构成，选择性地去除发射极层和接触层，使得其上形成有发射极的势垒高度例如，在InAlGaN四元混晶中的欧姆电极接触电阻可以降低，使得WSi发射极成为檐。通过使用发射电极作为掩模的自对准工艺形成基极。通过这样的结构，能够充分地缩短发射极与基极的边缘之间的距离，能够降低基极电阻。结果，可以实现具有良好的高频特性的双极晶体管。

10. 发明授权

US07465968B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07465968B2
公开(公告)日：2008-12-16
申请号：US11600067
申请日：2006-11-16
申请人： Tetsuzo Ueda , Satoshi Nakazawa , Tatsuo Morita
发明人： Tetsuzo Ueda , Satoshi Nakazawa , Tatsuo Morita
IPC分类号： H01L29/737
CPC分类号： H01L29/452 , H01L29/045 , H01L29/0692 , H01L29/2003 , H01L29/8122
摘要： A semiconductor device includes: a first nitride semiconductor layer having at least one projection on an upper surface thereof; a second nitride semiconductor layer formed on a top surface of the projection of the first nitride semiconductor layer and having a higher carrier concentration than the first nitride semiconductor layer; a first electrode formed on the second nitride semiconductor layer so as to overhang like a canopy and functioning as one of a source and a drain; and a second electrode formed to the side of the projection on the first nitride semiconductor layer and functioning as a gate.
摘要翻译：半导体器件包括：在其上表面上具有至少一个突起的第一氮化物半导体层; 第二氮化物半导体层，其形成在所述第一氮化物半导体层的所述突起的顶表面上，并且具有比所述第一氮化物半导体层更高的载流子浓度; 第一电极，形成在第二氮化物半导体层上，以便像顶盖一样悬垂并用作源极和漏极之一; 以及第二电极，其形成在第一氮化物半导体层上的突起侧并用作栅极。

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