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    • 4. 发明授权
    • Thin film magnetic head with a center tap
    • 薄膜磁头与中心水龙头
    • US4044394A
    • 1977-08-23
    • US673523
    • 1976-04-05
    • Masanobu HanazonoOsamu AsaiKunio Ono
    • Masanobu HanazonoOsamu AsaiKunio Ono
    • G11B5/17G11B5/31G11B5/20G11B5/28
    • G11B5/313G11B5/3163
    • A narrow track width magnetic head can be formed using an integrated circuit formation techniques such as evaporation plating, chemical etching, etc. But, there has been such a problem that it is difficult to provide a center tap in a conventional thin film magnetic head structure including coils of four or more turns. A magnetic head according to the present invention comprising a coil divided into two sections by the center tap, the electrostatic capacitance of each section being substantially the same. The coil may be formed into a precise pattern with ease by photoetching technique. A plurality of sets of conductive films insulated from one another are provided crossing a magnetic core, each set consisting of two conductive films of the same pattern. The alternating layers of the conductive films are connected on the backward of a magnetic gap to provide the two sections of the coil. A center tap is derived from a connection portion of the two sections of the coil and a coil terminal is provided at each of the opposite free ends of the coil. Thus, the thin film magnetic head having a multi-turn coil with a center tap is provided.
    • 可以使用诸如蒸发镀,化学蚀刻等的集成电路形成技术来形成窄轨道宽度的磁头。但是,存在这样的问题,即难以在传统的薄膜磁头结构中提供中心抽头 包括四圈或更多匝的线圈。 根据本发明的磁头包括通过中心抽头分成两部分的线圈,每个部分的静电电容基本上相同。 线圈可以通过光刻技术容易地形成精确的图案。 跨越磁芯设置多个彼此绝缘的导电膜组,每组由相同图案的两个导电膜组成。 导电膜的交替层在磁隙的后方连接以提供线圈的两个部分。 中心抽头来自线圈的两个部分的连接部分,线圈端子设置在线圈的相对的自由端中的每一个处。 因此,提供具有中心抽头的多匝线圈的薄膜磁头。
    • 5. 发明授权
    • Dynamic RAM having a full size dummy cell
    • 具有全尺寸虚拟单元的动态RAM
    • US4961166A
    • 1990-10-02
    • US729859
    • 1985-05-02
    • Katsuyuki SatoKazumasa YanagisawaKunio Ono
    • Katsuyuki SatoKazumasa YanagisawaKunio Ono
    • G11C11/4096G11C11/4099
    • G11C11/4096G11C11/4099
    • A dynamic RAM, in which the difference between a data signal level from one of a pair of complementary data lines coupled to a memory cell and a reference potential level of the other of the complementary data lines is differentially amplified by a sense amplifier. The data line taking the reference potential level is coupled to the other data line through a switch element so that its data line capacitance is increased. As a result, the reference potential level is held at a relatively stable level irrespective of a leakage current such as that caused by .alpha. particles. This construction makes it possible to use a full-size dummy cell because the capacitance of the data lines which takes the reference potential level is increased. The reference potential level achieved by the use of the full-size dummy cell is made relatively accurate because of the relative accuracy between the capacitances of the memory cells and the capacitance of the full-size dummy cell.
    • 动态RAM,其中来自耦合到存储单元的一对互补数据线中的一个的数据信号电平与另一个互补数据线的参考电位电平之间的差异由读出放大器差分放大。 采用参考电位电平的数据线通过开关元件耦合到另一条数据线,使其数据线电容增加。 结果,不管诸如由α粒子引起的漏电流如何,基准电位电平保持在相对稳定的水平。 这种结构使得可以使用全尺寸虚拟单元,因为增加了参考电位电平的数据线的电容。 由于存储单元的电容与全尺寸虚拟单元的电容之间的相对精度相对较高,因此通过使用全尺寸虚拟单元实现的参考电位水平相对精确。