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1. 发明授权

US07262433B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07262433B2
公开(公告)日：2007-08-28
申请号：US11137660
申请日：2005-05-26
申请人： Kazuyuki Sugahara , Naoki Nakagawa , Yoshihiko Toyoda , Takao Sakamoto
发明人： Kazuyuki Sugahara , Naoki Nakagawa , Yoshihiko Toyoda , Takao Sakamoto
IPC分类号： H01L27/12
CPC分类号： H01L27/1222 , H01L27/1214 , H01L27/127 , H01L29/78621 , H01L29/78627
摘要： A first thin film transistor including a gate electrode, a source region, a drain region, a GOLD region, and a channel region is formed at a first region at a TFT array substrate. A second thin film transistor including a gate electrode, a source region, drain region, a GOLD region, and a channel region is formed at a second region. The GOLD length (0.5 μm) of the GOLD region of the second thin film transistor is set shorter than the GOLD length (1.5 μm) of the GOLD region of the first thin film transistor. Accordingly, a semiconductor device directed to reducing the area occupied by semiconductor elements is obtained.
摘要翻译：在TFT阵列基板的第一区域形成包括栅极，源极区，漏极区，GOLD区和沟道区的第一薄膜晶体管。在第二区域形成包括栅电极，源极区，漏极区，GOLD区和沟道区的第二薄膜晶体管。第二薄膜晶体管的GOLD区域的GOLD长度（0.5μm）被设定为比第一薄膜晶体管的GOLD区域的GOLD长度（1.5μm）短。因此，获得了旨在减小半导体元件所占的面积的半导体器件。

2. 发明申请

US20050263770A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20050263770A1
公开(公告)日：2005-12-01
申请号：US11137660
申请日：2005-05-26
申请人： Kazuyuki Sugahara , Naoki Nakagawa , Yoshihiko Toyoda , Takao Sakamoto
发明人： Kazuyuki Sugahara , Naoki Nakagawa , Yoshihiko Toyoda , Takao Sakamoto
IPC分类号： H01L51/50 , H01L21/336 , H01L21/77 , H01L21/8234 , H01L21/84 , H01L27/08 , H01L27/088 , H01L27/12 , H01L29/786 , H05B33/14
CPC分类号： H01L27/1222 , H01L27/1214 , H01L27/127 , H01L29/78621 , H01L29/78627
摘要： A first thin film transistor including a gate electrode, a source region, a drain region, a GOLD region, and a channel region is formed at a first region at a TFT array substrate. A second thin film transistor including a gate electrode, a source region, drain region, a GOLD region, and a channel region is formed at a second region. The GOLD length (0.5 μm) of the GOLD region of the second thin film transistor is set shorter than the GOLD length (1.5 μm) of the GOLD region of the first thin film transistor. Accordingly, a semiconductor device directed to reducing the area occupied by semiconductor elements is obtained.
摘要翻译：在TFT阵列基板的第一区域形成包括栅极，源极区，漏极区，GOLD区和沟道区的第一薄膜晶体管。在第二区域形成包括栅电极，源极区，漏极区，GOLD区和沟道区的第二薄膜晶体管。第二薄膜晶体管的GOLD区域的GOLD长度（0.5μm）被设定为比第一薄膜晶体管的GOLD区域的GOLD长度（1.5μm）短。因此，获得了旨在减小半导体元件所占的面积的半导体器件。

3. 发明申请

US20050253195A1 Semiconductor device and image display device 审中-公开
标题翻译：半导体装置及图像显示装置
公开(公告)号：US20050253195A1
公开(公告)日：2005-11-17
申请号：US11109818
申请日：2005-04-20
申请人： Yoshihiko Toyoda , Takao Sakamoto , Kazuyuki Sugahara , Naoki Nakagawa
发明人： Yoshihiko Toyoda , Takao Sakamoto , Kazuyuki Sugahara , Naoki Nakagawa
IPC分类号： H01L27/08 , H01L21/00 , H01L21/336 , H01L21/77 , H01L21/8234 , H01L21/8238 , H01L27/088 , H01L27/092 , H01L27/12 , H01L29/786
CPC分类号： H01L27/127 , H01L27/1214 , H01L29/66757 , H01L29/78621 , H01L29/78645
摘要： A silicon nitride film and a silicon oxide film are formed on a glass substrate. On the silicon oxide film is formed a thin film transistor including a source region, a drain region, a channel region having a predetermined channel length, a GOLD region and an LDD region having an impurity concentration lower than the impurity concentration of the source region, a GOLD region and an LDD region having an impurity concentration lower than the impurity concentration of the drain region, a gate insulation film, and a gate electrode. The gate electrode is formed overlapping with and facing the channel region and the GOLD region. A semiconductor device is obtained, directed to improving source-drain breakdown voltage and AC stress resistance, and achieving desired current property.
摘要翻译：在玻璃基板上形成氮化硅膜和氧化硅膜。在氧化硅膜上形成薄膜晶体管，其包括源极区，漏极区，具有预定沟道长度的沟道区，GOLD区和具有低于源区杂质浓度的杂质浓度的LDD区，具有杂质浓度低于漏区杂质浓度的GOLD区和LDD区，栅极绝缘膜和栅电极。栅电极与沟道区域和金区域重叠并面对沟道区域。获得了一种半导体器件，旨在改善源 - 漏击穿电压和AC抗应力，并实现期望的电流特性。

4. 发明授权

US07553778B2 Method for producing a semiconductor device including crystallizing an amphorous semiconductor film 失效
标题翻译：一种半导体器件的制造方法，包括使两相半导体膜结晶化
公开(公告)号：US07553778B2
公开(公告)日：2009-06-30
申请号：US11356288
申请日：2006-02-17
申请人： Kazuyuki Sugahara , Naoki Nakagawa , Atsuhiro Sono , Shinsuke Yura , Kazushi Yamayoshi
发明人： Kazuyuki Sugahara , Naoki Nakagawa , Atsuhiro Sono , Shinsuke Yura , Kazushi Yamayoshi
IPC分类号： H01L21/00
CPC分类号： H01L21/02686 , H01L21/02422 , H01L21/02691 , H01L21/2026 , H01L27/1285 , H01L27/1296
摘要： A method for producing a semiconductor device includes irradiating an amorphous semiconductor film on an insulating material with a pulsed laser beam having a rectangular irradiation area, while scanning in a direction intersecting a longitudinal direction of the irradiation area, thereby forming a first polycrystalline semiconductor film, and irradiating a part of the amorphous semiconductor film with the laser beam, while scanning in a longitudinal direction intersecting the irradiation area, the part superposing the first polycrystalline semiconductor film and being adjacent to the first polycrystalline semiconductor film, thereby forming a second polycrystalline semiconductor film. The laser beam has a wavelength in a range from 390 nm to 640 nm, and the amorphous semiconductor film has a thickness in a range from 60 nm to 100 nm.
摘要翻译：一种制造半导体器件的方法包括：在具有矩形照射区域的脉冲激光束的绝缘材料上照射非晶半导体膜，同时沿与照射区域的纵向相交的方向扫描，从而形成第一多晶半导体膜，以及在与所述照射区域交叉的纵向方向上扫描所述非晶半导体膜的一部分，所述半导体膜与所述第一多晶半导体膜重叠，并且与所述第一多晶半导体膜相邻，从而形成第二多晶半导体膜。激光束的波长为390nm〜640nm，非晶半导体膜的厚度为60nm〜100nm。

5. 发明申请

US20060183304A1 Semiconductor device and method for producing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060183304A1
公开(公告)日：2006-08-17
申请号：US11356288
申请日：2006-02-17
申请人： Kazuyuki Sugahara , Naoki Nakagawa , Atsuhiro Sono , Shinsuke Yura , Kazushi Yamayoshi
发明人： Kazuyuki Sugahara , Naoki Nakagawa , Atsuhiro Sono , Shinsuke Yura , Kazushi Yamayoshi
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/02686 , H01L21/02422 , H01L21/02691 , H01L21/2026 , H01L27/1285 , H01L27/1296
摘要： A method for producing a semiconductor device includes irradiating an amorphous semiconductor film on an insulating material with a pulsed laser beam having a rectangular irradiation area, while scanning in a direction intersecting a longitudinal direction of the irradiation area, thereby forming a first polycrystalline semiconductor film, and irradiating a part of the amorphous semiconductor film with the laser beam, while scanning in a longitudinal direction intersecting the irradiation area, the part superposing the first polycrystalline semiconductor film and being adjacent to the first polycrystalline semiconductor film, thereby forming a second polycrystalline semiconductor film. The laser beam has a wavelength in a range from 390 nm to 640 nm, and the amorphous semiconductor film has a thickness in a range from 60 nm to 100 nm.
摘要翻译：一种制造半导体器件的方法包括：在具有矩形照射区域的脉冲激光束的绝缘材料上照射非晶半导体膜，同时沿与照射区域的纵向相交的方向扫描，从而形成第一多晶半导体膜，以及在与所述照射区域交叉的纵向方向上扫描所述非晶半导体膜的一部分，所述半导体膜与所述第一多晶半导体膜重叠，并且与所述第一多晶半导体膜相邻，从而形成第二多晶半导体膜。激光束的波长为390nm〜640nm，非晶半导体膜的厚度为60nm〜100nm。

6. 发明申请

US20100112790A1 METHOD OF MANUFACTURING SEMICONDUCTOR THIN FILM AND SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体薄膜和半导体器件的方法
公开(公告)号：US20100112790A1
公开(公告)日：2010-05-06
申请号：US12596453
申请日：2007-12-05
申请人： Kazuyuki Sugahara , Naoki Nakagawa , Shinsuke Yura , Toru Takeguchi , Tomoyuki Irizumi , Kazushi Yamayoshi , Atsuhiro Sono
发明人： Kazuyuki Sugahara , Naoki Nakagawa , Shinsuke Yura , Toru Takeguchi , Tomoyuki Irizumi , Kazushi Yamayoshi , Atsuhiro Sono
IPC分类号： H01L21/20 , H01L21/268
CPC分类号： H01L21/02675 , H01L21/02532 , H01L27/1285 , H01L27/1296 , H01L29/04 , H01L29/0657
摘要： On a translucent substrate, an insulating film having a refractive index n and an amorphous silicon film are deposited successively. By irradiating the amorphous silicon film with a laser beam having a beam shape of a band shape extending along a length direction with a wavelength λ, a plurality of times from a side of amorphous silicon film facing the insulating film, while an irradiation position of the laser beam is shifted each of the plurality of times in a width direction of the band shape by a distance smaller than a width dimension of the band shape, a polycrystalline silicon film is formed from the amorphous silicon film. Forming the polycrystalline silicon film forms crystal grain boundaries which extend in the width direction and are disposed at a mean spacing measured along the length direction and ranging from (λ/n)×0.95 to (λ/n)×1.05 inclusive, and crystal grain boundaries which, in a region between crystal grain boundaries adjacent to each other and extending in the width direction, extend in the length direction and are disposed at a mean spacing measured along the width direction and ranging from (λ/n)×0.95 to (λ/n)×1.05 inclusive.
摘要翻译：在半透明基板上，依次沉积具有折射率n的绝缘膜和非晶硅膜。通过从具有波长λ方向的波长形状的波束形状的激光束照射非晶硅膜，从非晶硅膜的与绝缘膜相对的侧面多次，激光束在带状的宽度方向上多次移动距离小于带状的宽度尺寸的距离，由非晶硅膜形成多晶硅膜。形成多晶硅膜形成在宽度方向上延伸的晶粒边界，并且以沿长度方向测量的平均间隔设置，范围为（λ/ n）×0.95〜（λ/ n）×1.05，在彼此相邻并且在宽度方向上延伸的晶粒边界之间的区域中，在长度方向上延伸并沿宽度方向测量的平均间隔设置在（λ/ n）×0.95〜（ λ/ n）×1.05（含）。

7. 发明授权

US08080450B2 Method of manufacturing semiconductor thin film 有权
标题翻译：制造半导体薄膜的方法
公开(公告)号：US08080450B2
公开(公告)日：2011-12-20
申请号：US12596453
申请日：2007-12-05
申请人： Kazuyuki Sugahara , Naoki Nakagawa , Shinsuke Yura , Toru Takeguchi , Tomoyuki Irizumi , Kazushi Yamayoshi , Atsuhiro Sono
发明人： Kazuyuki Sugahara , Naoki Nakagawa , Shinsuke Yura , Toru Takeguchi , Tomoyuki Irizumi , Kazushi Yamayoshi , Atsuhiro Sono
IPC分类号： H01L21/84 , H01L21/00 , H01L21/205
CPC分类号： H01L21/02675 , H01L21/02532 , H01L27/1285 , H01L27/1296 , H01L29/04 , H01L29/0657
摘要： On a translucent substrate, an insulating film having a refractive index n and an amorphous silicon film are deposited successively. By irradiating the amorphous silicon film with a laser beam having a beam shape of a band shape extending along a length direction with a wavelength λ, a plurality of times from a side of amorphous silicon film facing the insulating film, while an irradiation position of the laser beam is shifted each of the plurality of times in a width direction of the band shape by a distance smaller than a width dimension of the band shape, a polycrystalline silicon film is formed from the amorphous silicon film. Forming the polycrystalline silicon film forms crystal grain boundaries which extend in the width direction and are disposed at a mean spacing measured along the length direction and ranging from (λ/n)×0.95 to (λ/n)×1.05 inclusive, and crystal grain boundaries which, in a region between crystal grain boundaries adjacent to each other and extending in the width direction, extend in the length direction and are disposed at a mean spacing measured along the width direction and ranging from (λ/n)×0.95 to (λ/n)×1.05 inclusive.
摘要翻译：在半透明基板上，依次沉积具有折射率n的绝缘膜和非晶硅膜。通过从具有波长λ方向的波长形状的波束形状的激光束照射非晶硅膜，从非晶硅膜的与绝缘膜相对的侧面多次，激光束在带状的宽度方向上多次移动距离小于带状的宽度尺寸的距离，由非晶硅膜形成多晶硅膜。形成多晶硅膜形成在宽度方向上延伸的晶粒边界，并且以沿长度方向测量的平均间隔设置，范围为（λ/ n）×0.95〜（λ/ n）×1.05，在彼此相邻并且在宽度方向上延伸的晶粒边界之间的区域中，在长度方向上延伸并沿宽度方向测量的平均间隔设置在（λ/ n）×0.95〜（ λ/ n）×1.05（含）。

8. 发明授权

US07612378B2 Semiconductor device with multiple impurity regions and image display apparatus 有权
标题翻译：具有多个杂质区域的半导体器件和图像显示装置
公开(公告)号：US07612378B2
公开(公告)日：2009-11-03
申请号：US11376414
申请日：2006-03-16
申请人： Yoshihiko Toyoda , Naoki Nakagawa , Taro Yoshino
发明人： Yoshihiko Toyoda , Naoki Nakagawa , Taro Yoshino
IPC分类号： H01L29/08
CPC分类号： H01L27/1214 , H01L27/3244 , H01L29/78624 , H01L2029/7863
摘要： A silicon nitride film and a silicon oxide film are formed on a glass substrate. On the silicon oxide film is formed a thin film transistor including a source region, a drain region, a channel region having a predetermined channel length, an LDD region and GOLD region having an impurity concentration higher than the impurity concentration of the channel region and lower than the impurity concentration of the source and drain regions, a gate insulation film, and a gate electrode. The gate electrode is formed to overlap in plane with the channel region and the GOLD region. Accordingly, a semiconductor device and an image display apparatus directed to improving source-drain breakdown voltage are obtained.
摘要翻译：在玻璃基板上形成氮化硅膜和氧化硅膜。在氧化硅膜上形成薄膜晶体管，其包括源极区，漏极区，具有预定沟道长度的沟道区，LDD区和杂质浓度高于沟道区的杂质浓度的GOLD区，比源极和漏极区域的杂质浓度，栅极绝缘膜和栅极电极。栅电极形成为与沟道区域和GOLD区域平面重叠。因此，获得了旨在提高源极 - 漏极击穿电压的半导体器件和图像显示装置。

9. 发明申请

US20060214229A1 Semiconductor device and image display apparatus 有权
标题翻译：半导体装置和图像显示装置
公开(公告)号：US20060214229A1
公开(公告)日：2006-09-28
申请号：US11376414
申请日：2006-03-16
申请人： Yoshihiko Toyoda , Naoki Nakagawa , Taro Yoshino
发明人： Yoshihiko Toyoda , Naoki Nakagawa , Taro Yoshino
IPC分类号： H01L27/12
CPC分类号： H01L27/1214 , H01L27/3244 , H01L29/78624 , H01L2029/7863
摘要： A silicon nitride film and a silicon oxide film are formed on a glass substrate. On the silicon oxide film is formed a thin film transistor including a source region, a drain region, a channel region having a predetermined channel length, an LDD region and GOLD region having an impurity concentration higher than the impurity concentration of the channel region and lower than the impurity concentration of the source and drain regions, a gate insulation film, and a gate electrode. The gate electrode is formed to overlap in plane with the channel region and the GOLD region. Accordingly, a semiconductor device and an image display apparatus directed to improving source-drain breakdown voltage are obtained.
摘要翻译：在玻璃基板上形成氮化硅膜和氧化硅膜。在氧化硅膜上形成薄膜晶体管，其包括源极区，漏极区，具有预定沟道长度的沟道区，LDD区和杂质浓度高于沟道区的杂质浓度的GOLD区，比源极和漏极区域的杂质浓度，栅极绝缘膜和栅极电极。栅电极形成为与沟道区域和GOLD区域平面重叠。因此，获得了旨在提高源极 - 漏极击穿电压的半导体器件和图像显示装置。

10. 发明授权

US07541646B2 Thin film transistor device and method of manufacturing the same 失效
标题翻译：薄膜晶体管器件及其制造方法
公开(公告)号：US07541646B2
公开(公告)日：2009-06-02
申请号：US11673773
申请日：2007-02-12
申请人： Hitoshi Nagata , Takao Sakamoto , Naoki Nakagawa
发明人： Hitoshi Nagata , Takao Sakamoto , Naoki Nakagawa
IPC分类号： H01L21/84
CPC分类号： H01L29/4908 , H01L27/1248 , H01L29/66757 , H01L29/78636
摘要： A thin film transistor device according to an embodiment of the invention includes: a thin film transistor having a silicon layer including a source region, a drain region, and a channel region, a gate insulating layer, and a gate electrode formed on an insulating substrate; an interlayer insulating layer covering the thin film transistor; a line electrically connected with the source region, the drain region, and the gate electrode through a contact hole formed in the interlayer insulating layer; a first upper insulating layer covering the line and the interlayer insulating layer and smoothing out stepped portions of the line and irregularities of a surface of the interlayer insulating layer; and a second upper insulating layer covering the first upper insulating layer, the second upper insulating layer having a hydrogen diffusion coefficient smaller than a hydrogen diffusion coefficient of the first upper insulating layer.
摘要翻译：根据本发明实施例的薄膜晶体管器件包括：薄膜晶体管，其具有包括源极区，漏极区和沟道区的硅层，栅极绝缘层和形成在绝缘基板上的栅电极 ; 覆盖薄膜晶体管的层间绝缘层; 通过形成在所述层间绝缘层中的接触孔与所述源极区，所述漏极区和所述栅电极电连接的线; 覆盖所述线和所述层间绝缘层的第一上绝缘层，并平滑所述线的台阶部分和所述层间绝缘层的表面的不规则性; 以及覆盖所述第一上绝缘层的第二上绝缘层，所述第二上绝缘层的氢扩散系数小于所述第一上绝缘层的氢扩散系数。

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