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1. 发明申请

US20060028417A1 Display device 有权
标题翻译：显示设备
公开(公告)号：US20060028417A1
公开(公告)日：2006-02-09
申请号：US11195821
申请日：2005-08-03
申请人： Kazuyuki Harada , Yohei Kimura , Koji Nakayama
发明人： Kazuyuki Harada , Yohei Kimura , Koji Nakayama
IPC分类号： G09G3/36
CPC分类号： G09G3/006 , G09G3/3611 , G09G2310/0281
摘要： A display device includes a first inspection wiring line that is connected to first wiring lines of a first wiring line group and to third wiring lines of a second wiring line group, and a second inspection wiring line that is connected to second wiring lines of the first wiring line group, which neighbor the first wiring lines, and to fourth wiring lines of the second wiring line group, which neighbor the third wiring lines.
摘要翻译：显示装置包括：第一检查布线，其与第一布线线组的第一布线和第二布线组的第三布线连接;第二检查布线，与第一布线与第一布线相邻的布线组以及与第三布线相邻的第二布线线组的第四布线。

2. 发明申请

US20060028414A1 Display device, inspection method for display device, and inspection device for display device 有权
标题翻译：显示装置，显示装置的检查方法以及显示装置的检查装置
公开(公告)号：US20060028414A1
公开(公告)日：2006-02-09
申请号：US11195771
申请日：2005-08-03
申请人： Yohei Kimura , Koji Nakayama , Kazuyuki Harada
发明人： Yohei Kimura , Koji Nakayama , Kazuyuki Harada
IPC分类号： G09G3/36
CPC分类号： G09G3/006 , G06F3/1423 , G09G3/3648 , G09G3/3666 , G09G2300/0426 , G09G2310/0218 , G09G2310/0278 , G09G2330/12
摘要： A display device includes a first wiring line group of wiring lines connected to odd-number-th scan lines, a second wiring line group of wiring lines connected to even-number-th scan lines, a first inspection wiring line connected to first wiring lines of the first wiring line group, a second inspection wiring line connected to second wiring lines of the first wiring line group, which neighbor the first wiring lines, a third inspection wiring line connected to third wiring lines of the second wiring line group, and a fourth inspection wiring line connected to fourth wiring lines of the second wiring line group, which neighbor the third wiring lines.
摘要翻译：显示装置包括连接到奇数列扫描线的布线的第一布线组，连接到第二扫描线的布线的第二布线组，与第一布线相连的第一检测布线与第一配线组相邻的与第一配线相邻的第二配线连接的第二检查配线，与第二配线组的第三配线连接的第三检查配线，第四检查配线与第二配线组的与第三配线相邻的第四配线连接。

3. 发明授权

US07038484B2 Display device 有权
公开(公告)号：US07038484B2
公开(公告)日：2006-05-02
申请号：US11195821
申请日：2005-08-03
申请人： Kazuyuki Harada , Yohei Kimura , Koji Nakayama
发明人： Kazuyuki Harada , Yohei Kimura , Koji Nakayama
IPC分类号： G01R31/00 , G09G3/36
CPC分类号： G09G3/006 , G09G3/3611 , G09G2310/0281
摘要： A display device includes a first inspection wiring line that is connected to first wiring lines of a first wiring line group and to third wiring lines of a second wiring line group, and a second inspection wiring line that is connected to second wiring lines of the first wiring line group, which neighbor the first wiring lines, and to fourth wiring lines of the second wiring line group, which neighbor the third wiring lines.

4. 发明授权

US07796222B2 Display device, inspection method for display device, and inspection device for display device 有权
标题翻译：显示装置，显示装置的检查方法以及显示装置的检查装置
公开(公告)号：US07796222B2
公开(公告)日：2010-09-14
申请号：US11195771
申请日：2005-08-03
申请人： Yohei Kimura , Koji Nakayama , Kazuyuki Harada
发明人： Yohei Kimura , Koji Nakayama , Kazuyuki Harada
IPC分类号： G02F1/133
CPC分类号： G09G3/006 , G06F3/1423 , G09G3/3648 , G09G3/3666 , G09G2300/0426 , G09G2310/0218 , G09G2310/0278 , G09G2330/12
摘要： A display device includes a first wiring line group of wiring lines connected to odd-number-th scan lines, a second wiring line group of wiring lines connected to even-number-th scan lines, a first inspection wiring line connected to first wiring lines of the first wiring line group, a second inspection wiring line connected to second wiring lines of the first wiring line group, which neighbor the first wiring lines, a third inspection wiring line connected to third wiring lines of the second wiring line group, and a fourth inspection wiring line connected to fourth wiring lines of the second wiring line group, which neighbor the third wiring lines.
摘要翻译：显示装置包括连接到奇数列扫描线的布线的第一布线组，连接到第二扫描线的布线的第二布线组，与第一布线相连的第一检测布线与第一配线组相邻的与第一配线相邻的第二配线连接的第二检查配线，与第二配线组的第三配线连接的第三检查配线，第四检查配线与第二配线组的与第三配线相邻的第四配线连接。

5. 发明申请

US20060103412A1 Display device 审中-公开
标题翻译：显示设备
公开(公告)号：US20060103412A1
公开(公告)日：2006-05-18
申请号：US11259178
申请日：2005-10-27
申请人： Yohei Kimura , Koji Nakayama
发明人： Yohei Kimura , Koji Nakayama
IPC分类号： G01R31/00
CPC分类号： G09G3/006 , G02F2001/13456 , G02F2001/136254
摘要： There is disclosed a display device comprising an effective display section constituted of a plurality of system pixels, an inspection wiring line to which a signal for inspection is supplied in inspecting the effective display section, and a conductive layer having a discharge inducing section which is disposed in such a manner as to face the inspection wiring line at a predetermined interval and which induces discharge of electric charges accumulated in the inspection wiring line.
摘要翻译：公开了一种显示装置，包括由多个系统像素构成的有效显示部分，在检查有效显示部分中提供检查信号的检查布线和设置有放电感应部的导电层以这样的方式，以预定间隔面对检查布线，并且引起在检查布线中累积的电荷的放电。

6. 发明申请

US20080218678A1 LIQUID CRYSTAL DISPLAY DEVICE 审中-公开
标题翻译：液晶显示装置
公开(公告)号：US20080218678A1
公开(公告)日：2008-09-11
申请号：US12037430
申请日：2008-02-26
申请人： Koji Nakayama , Noriyuki Kizu , Kazuyuki Harada
发明人： Koji Nakayama , Noriyuki Kizu , Kazuyuki Harada
IPC分类号： G02F1/1343
CPC分类号： G02F1/1345 , G02F2001/13456
摘要： A power supply wiring which is disposed on an array substrate and supplies a predetermined potential to a counter-electrode, includes a power supply pad which is included in a third electrically conductive layer, a first wiring which is included in a first electrically conductive layer and is electrically connected to the power supply pad, a second wiring which is included in a second electrically conductive layer, and a bridge wiring which is included in the third electrically conductive layer and electrically connects the first wiring and the second wiring, the power supply wiring being electrically connected to the counter-electrode via an electrically conductive member which is disposed on the power supply pad.
摘要翻译：设置在阵列基板上并向对置电极提供预定电位的电源布线包括包括在第三导电层中的电源焊盘，包括在第一导电层中的第一布线和电连接到电源焊盘，包括在第二导电层中的第二布线和包括在第三导电层中并且电连接第一布线和第二布线的桥接线，电源布线通过布置在电源焊盘上的导电构件电连接到对电极。

7. 发明申请

US20140045680A1 METHOD FOR MANUFACTURING METALLIC GLASS NANOWIRE, METALLIC GLASS NANOWIRE MANUFACTURED THEREBY, AND CATALYST CONTAINING METALLIC GLASS NANOWIRE 有权
标题翻译：制造金属玻璃纳米管的方法，制造的金属玻璃纳米管和含有金属玻璃纳米管的催化剂
公开(公告)号：US20140045680A1
公开(公告)日：2014-02-13
申请号：US14112507
申请日：2012-04-17
申请人： Koji Nakayama , Yoshihiko Yokoyama
发明人： Koji Nakayama , Yoshihiko Yokoyama
IPC分类号： B01J27/185 , B01J23/755
CPC分类号： B01J27/1853 , B01J21/066 , B01J23/42 , B01J23/44 , B01J23/755 , B01J35/06 , B22F1/0025 , B22F9/002 , B22F9/082 , B22F2999/00 , B82Y30/00 , C22C1/002 , C22C1/03 , C22C1/0433 , C22C1/0458 , C22C1/0466 , C22C28/00 , C22C33/003 , C22C33/02 , C22C38/002 , C22C45/00 , C22C45/003 , C22C45/02 , C22C45/04 , C22C45/10 , B22F2202/03
摘要： Provided is a method for easily manufacturing large volumes of a metallic glass nanowire with an extremely small diameter. This metallic glass nanowire manufacturing method is characterized in that a melted metallic glass or a master alloy thereof is gas-atomized in a supercooled state.
摘要翻译：提供了容易制造大体积的具有极小直径的金属玻璃纳米线的方法。该金属玻璃纳米线的制造方法的特征在于，熔融金属玻璃或其母合金以过冷却状态进行气体雾化。

8. 发明授权

US08178949B2 Bipolar semiconductor device, method for producing the same, and method for controlling Zener voltage 失效
标题翻译：双极半导体器件及其制造方法以及用于控制齐纳电压的方法
公开(公告)号：US08178949B2
公开(公告)日：2012-05-15
申请号：US12525198
申请日：2008-01-31
申请人： Ryosuke Ishii , Koji Nakayama , Yoshitaka Sugawara , Hidekazu Tsuchida
发明人： Ryosuke Ishii , Koji Nakayama , Yoshitaka Sugawara , Hidekazu Tsuchida
IPC分类号： H01L21/331
CPC分类号： H01L29/866 , H01L29/06 , H01L29/0615 , H01L29/1608 , H01L29/36 , H01L29/66106 , H01L29/8613
摘要： Bipolar semiconductor devices have a Zener voltage controlled very precisely in a wide range of Zener voltages (for example, from 10 to 500 V). A bipolar semiconductor device has a mesa structure and includes a silicon carbide single crystal substrate of a first conductivity type, a silicon carbide conductive layer of a first conductivity type, a highly doped layer of a second conductivity type and a silicon carbide conductive layer of a second conductivity type which substrate and conductive layers are laminated in the order named.
摘要翻译：双极半导体器件在齐纳电压的宽范围（例如10至500V）内非常精确地控制齐纳电压。双极半导体器件具有台面结构，并且包括第一导电类型的碳化硅单晶衬底，第一导电类型的碳化硅导电层，第二导电类型的高掺杂层和碳化硅导电层第二导电类型，其中基板和导电层按顺序层压。

9. 发明授权

US08154026B2 Silicon carbide bipolar semiconductor device 失效
标题翻译：碳化硅双极半导体器件
公开(公告)号：US08154026B2
公开(公告)日：2012-04-10
申请号：US12097019
申请日：2006-12-13
申请人： Ryosuke Ishii , Koji Nakayama , Yoshitaka Sugawara , Toshiyuki Miyanagi , Hidekazu Tsuchida , Isaho Kamata , Tomonori Nakamura
发明人： Ryosuke Ishii , Koji Nakayama , Yoshitaka Sugawara , Toshiyuki Miyanagi , Hidekazu Tsuchida , Isaho Kamata , Tomonori Nakamura
IPC分类号： H01L29/15
CPC分类号： H01L29/1604 , H01L21/0465 , H01L21/047 , H01L29/0615 , H01L29/0619 , H01L29/0661 , H01L29/1608 , H01L29/6606 , H01L29/66068 , H01L29/8613
摘要： In a SiC bipolar semiconductor device with a mesa structure having a SiC drift layer of a first conductive type and a SiC carrier injection layer of a second conductive type that are SiC epitaxial layers grown from a surface of a SiC single crystal substrate, the formation of stacking faults and the expansion of the area thereof are prevented and thereby the increase in forward voltage is prevented. Further, a characteristic of withstand voltage in a reverse biasing is improved. An forward-operation degradation preventing layer is formed on a mesa wall or on a mesa wall and a mesa periphery to separate spatially the surface of the mesa wall from a pn-junction interface. In one embodiment, the forward-operation degradation preventing layer is composed of a silicon carbide low resistance layer of a second conductive type that is equipotential during the application of a reverse voltage. In another embodiment, the forward-operation degradation preventing layer is composed of a silicon carbide conductive layer of a second conductive type, and a metal layer that is equipotential during the application of a reverse voltage is formed on a surface of the silicon carbide conductive layer. In still another embodiment, the forward-operation degradation preventing layer is composed of a high resistance amorphous layer.
摘要翻译：在具有由SiC单晶衬底的表面生长的SiC外延层的具有第一导电类型的SiC漂移层和第二导电类型的SiC载流子注入层的台阶结构的SiC双极型半导体器件中，形成防止堆垛层错及其面积的膨胀，从而防止正向电压的增加。此外，提高了反向偏置中的耐受电压的特性。在台面壁或台面壁和台面周边上形成正向操作降解防止层，以在空间上分离台面壁的表面与pn结界面。在一个实施例中，正向操作降解防止层由在施加反向电压期间具有等电位的第二导电类型的碳化硅低电阻层构成。在另一个实施方案中，正向操作降解防止层由第二导电类型的碳化硅导电层构成，并且在施加反向电压期间具有等电位的金属层形成在碳化硅导电层的表面上。在另一个实施方案中，正向操作降解防止层由高电阻非晶层组成。

10. 发明授权

US08093599B2 Silicon carbide Zener diode 失效
标题翻译：碳化硅齐纳二极管
公开(公告)号：US08093599B2
公开(公告)日：2012-01-10
申请号：US12597121
申请日：2008-04-25
申请人： Ryosuke Ishii , Koji Nakayama , Yoshitaka Sugawara , Hidekazu Tsuchida
发明人： Ryosuke Ishii , Koji Nakayama , Yoshitaka Sugawara , Hidekazu Tsuchida
IPC分类号： H01L29/866
CPC分类号： H01L29/866 , H01L29/0615 , H01L29/1608 , H01L29/66106
摘要： A silicon carbide Zener diode is a bipolar semiconductor device that has a mesa structure and includes a silicon carbide single crystal substrate of a first conductivity type, formed thereon, a silicon carbide conductive layer of a first conductivity type, and a silicon carbide conductive layer of a second conductivity type formed on the silicon carbide conductive layer of a first conductivity type, wherein a depletion layer that is formed under reverse bias at a junction between the silicon carbide conductive layer of a first conductivity type and the silicon carbide conductive layer of a second conductivity type does not reach a mesa corner formed in the silicon carbide conductive layer of a first conductivity type.
摘要翻译：一种碳化硅齐纳二极管是具有台面结构的双极半导体器件，包括形成在其上的第一导电类型的碳化硅单晶衬底，第一导电类型的碳化硅导电层和碳化硅导电层形成在第一导电类型的碳化硅导电层上的第二导电类型，其中在第一导电类型的碳化硅导电层与第二导电类型的碳化硅导电层之间的接合处以反偏压形成的耗尽层导电类型不到达形成在第一导电类型的碳化硅导电层中的台面角。

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