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    • 3. 发明授权
    • Support for photosensitive resin
    • 支持感光树脂
    • US4060656A
    • 1977-11-29
    • US596189
    • 1975-07-15
    • Kiyomi NakaTeruo Takahashi
    • Kiyomi NakaTeruo Takahashi
    • G03C1/93G03F7/11G03F7/02
    • G03C1/93G03F7/11Y10S430/136Y10T428/287Y10T428/2891Y10T428/31511Y10T428/31515Y10T428/31522Y10T428/31529
    • A support for a photosensitive resin for use in making a printing plate using a liquid photosensitive resin, said support comprising a flexible self-supporting base plate and an adhesive layer formed thereon for applying a layer of the photosensitive resin, wherein said adhesive layer is a three-dimensional cured product containing 1 .times. 10.sup.-4 to 1 .times. 10.sup.-2 mol/gr. of the effectively photopolymerizable unsaturated carbon-to-carbon double bond, which has been formed from a composition consisting of (A) a compound containing at least two 1,2-epoxy groups in the molecule; (B) a compound selected from one of the group comprising (i) a compound containing an effectively photopolymerizable unsaturated carbon-to-carbon double bond and a 1,2-epoxy group in the molecule and having a boiling point of at least 120.degree. C., or (ii) a compound containing an effectively photopolymerizable unsaturated carbon-to-carbon double bond and an amino group in the molecule and having a boiling point of at least 120.degree. C.; and (C) an organic curing agent.
    • 用于制造使用液体感光树脂的印版的感光性树脂的载体,所述载体包括柔性自支撑基板和形成在其上的用于施加感光性树脂层的粘合剂层,其中所述粘合剂层为 含有1×10 -4至1×10 -2 mol / gr的三维固化产物。 由(A)在分子中含有至少两个1,2-环氧基的化合物组成的组合物形成的有效光聚合性不饱和碳 - 碳双键; (B)选自以下组中的一种化合物:(i)分子中含有有效光聚合性不饱和碳 - 碳双键和1,2-环氧基的化合物,其沸点为至少120℃ 或者(ⅱ)分子中含有有效光聚合的不饱和碳 - 碳双键和氨基并且沸点为至少120℃的化合物。 和(C)有机固化剂。
    • 5. 发明申请
    • DIRECTION FINDER ANTENNA
    • 方向寻找天线
    • US20070109213A1
    • 2007-05-17
    • US11557140
    • 2006-11-07
    • Teruo Takahashi
    • Teruo Takahashi
    • H01Q21/00
    • H01Q21/062
    • The present invention provides a direction finder antenna that includes an antenna mount having one flat portion and four extensible whip antenna elements respectively upright provided rotatably at antenna upright-provided points formed on one circumference at an antenna upright-provided surface. The four extensible whip antenna elements can be rotatably set to arbitrary angular positions lying in sector-shaped areas each having an open angle of 180° orthogonal to the one circumference, which are formed on the antenna upright-provided surface side, centering on the respective antenna upright-provided points at the antenna upright-provided surface.
    • 本发明提供了一种取向器天线,其包括具有一个平坦部分的天线安装座和分别竖立的四个可延伸的鞭状天线元件,所述四个可延伸的鞭状天线元件可旋转地设置在天线垂直设置的一个圆周上形成在天线垂直设置表面处。 四个可延伸的鞭状天线元件可以可旋转地设置在任意角度位置,其位于扇形区域中,每个扇形区域具有垂直于一个圆周的180°的开角度,它们形成在天线竖立设置表面侧上,以相应的 天线直立提供的点在天线直立提供的表面。
    • 6. 发明授权
    • Thickness measuring apparatus, thickness measuring method, and wet etching apparatus and wet etching method utilizing them
    • 厚度测量装置,厚度测量方法和湿蚀刻装置以及利用它们的湿式蚀刻方法
    • US06768552B2
    • 2004-07-27
    • US10275136
    • 2002-11-01
    • Teruo TakahashiMotoyuki Watanabe
    • Teruo TakahashiMotoyuki Watanabe
    • G01B902
    • G01B11/0683G01B11/0675H01L21/67253H01L22/12
    • At each measurement time, reflected light from a semiconductor wafer W or the like by measurement light from a measurement light source 11 is coupled to reference light from a reference light generating section 14, and interference light is detected by a photodetector 15. A raw thickness value calculating section 16b selects two light intensity peaks corresponding to the upper and lower surfaces of the wafer W from a light intensity distribution between an interference light intensity and a reference optical path length and calculates a raw thickness value. A statistical thickness value calculating section 16c executes statistical processing including data sorting, determination whether the raw thickness value falls within an allowable numerical value range, and determination of a thickness change line, thereby obtaining a statistical thickness value. With this arrangement, a thickness measuring apparatus and thickness measuring method capable of measuring the thickness of a semiconductor wafer during execution of wet etching independently of the presence of an etchant, and a wet etching apparatus and wet etching method using the thickness measuring apparatus and method are implemented.
    • 在每个测量时间,通过来自测量光源11的测量光来自半导体晶片W等的反射光与来自参考光产生部分14的参考光耦合,并且由光电检测器15检测干涉光。原始厚度 值计算部分16b从干涉光强度和参考光程长度之间的光强度分布中选择与晶片W的上表面和下表面相对应的两个光强峰值,并计算原始厚度值。 统计厚度值计算部分16c执行包括数据分类,确定原始厚度值是否在容许数值范围内的统计处理以及厚度变化线的确定,从而获得统计厚度值。 利用这种布置,可以独立于蚀刻剂的存在,以及使用该厚度测量装置和方法的湿蚀刻装置和湿式蚀刻方法,能够在执行湿蚀刻期间测量半导体晶片的厚度的厚度测量装置和厚度测量方法 被实施。