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    • 5. 发明授权
    • Semiconductor device and method of manufacturing semiconductor device
    • 半导体装置及其制造方法
    • US07605424B2
    • 2009-10-20
    • US11846802
    • 2007-08-29
    • Tsutomu ImotoToshio KobayashiTakayoshi Kato
    • Tsutomu ImotoToshio KobayashiTakayoshi Kato
    • H01L29/94
    • H01L29/6659H01L21/26586H01L29/1037H01L29/6653H01L29/66545H01L29/66628H01L29/66659H01L29/7835
    • A semiconductor device including: a semiconductor region having a first semiconductor face and a second semiconductor face connected to the first semiconductor face and having an inclination with respect to the first semiconductor face; a gate insulating film formed on the first and on the second semiconductor faces; a gate electrode formed on the gate insulating film including a part on a boundary between the first semiconductor face and the second semiconductor face; a source impurity region formed in the semiconductor region so as to overlap the gate electrode within the first semiconductor face with the gate insulating film interposed between the source impurity region and the gate electrode; and a drain impurity region formed in the semiconductor region directly under the second semiconductor face at least.
    • 一种半导体器件,包括:半导体区域,具有连接到第一半导体表面并且具有相对于第一半导体表面的倾斜的第一半导体面和第二半导体面; 形成在所述第一和第二半导体面上的栅极绝缘膜; 形成在所述栅极绝缘膜上的栅极,所述栅极绝缘膜包括在所述第一半导体面和所述第二半导体面之间的边界上的一部分; 源极杂质区,形成在所述半导体区域中,以与所述栅极绝缘膜插入在所述源极杂质区域和所述栅极电极之间,与所述第一半导体面内的所述栅电极重叠; 以及至少在第二半导体面的正下方的半导体区域中形成的漏极杂质区域。