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1. 发明授权

US08608162B2 Image forming apparatus 有权
标题翻译：图像形成装置
公开(公告)号：US08608162B2
公开(公告)日：2013-12-17
申请号：US13434175
申请日：2012-03-29
申请人： Kazutoshi Nakamura , Takashi Saito
发明人： Kazutoshi Nakamura , Takashi Saito
IPC分类号： B65H31/26
CPC分类号： B41J13/106 , B65H31/26 , B65H2402/46 , B65H2404/63 , B65H2405/1114 , B65H2801/06 , G03G15/6552
摘要： An image forming apparatus including an image forming unit, a discharger, and a presser including a swingable member and a contact member is provided. The contact member is partially attached to the swingable member in a condition to create clearance between an unattached part and the swingable member. Weights of the contact member and the swingable member affect the sheet when the recording medium contacts the contact member and the contact member is moved to swing upward along with the swingable member by the recording medium. Resilient force is provided by the contact member to affect the recording medium when the recording medium contacts the contact member and the contact member is moved in a direction to narrow the clearance.
摘要翻译：提供一种包括图像形成单元，放电器和包括可摆动构件和接触构件的按压器的图像形成设备。接触构件在形成未连接部分和可摆动构件之间的间隙的状态下部分地附接到可摆动构件。当记录介质接触接触构件时，接触构件和可摆动构件的重量影响片材，并且接触构件通过记录介质与可摆动构件一起向上移动。当记录介质接触接触构件并且接触构件沿使间隙变窄的方向移动时，接触构件提供弹性力以影响记录介质。

2. 发明授权

US08734038B2 Image forming apparatus which guides an ejected recording medium downwards 有权
标题翻译：向下引导喷出的记录介质的图像形成装置
公开(公告)号：US08734038B2
公开(公告)日：2014-05-27
申请号：US13244356
申请日：2011-09-24
申请人： Kazutoshi Nakamura , Takashi Saito
发明人： Kazutoshi Nakamura , Takashi Saito
IPC分类号： B41J13/10 , G03G15/00 , B65H29/70
CPC分类号： G03G15/6552 , B41J13/106
摘要： An image forming apparatus is provided that includes an image forming unit disposed in a main body and configured to form an image on a recording medium, an output tray provided in the main body and configured to receive the recording medium having an image formed thereon, and an ejection device provided in the main body and configured to eject the recording medium to the output tray. The apparatus may further include a movable sheet guiding member movably attached to the main body and a stationary sheet guiding member disposed downstream of the movable sheet guiding member in a recording medium ejection direction and above the output tray. The movable sheet guiding member can press a recording medium ejected from the ejection device downward, and the stationary sheet guiding member can protrude from the main body.
摘要翻译：提供了一种图像形成装置，其包括：图像形成单元，其设置在主体中并且被配置为在记录介质上形成图像;输出托盘，设置在主体中并且被配置为接收具有形成在其上的图像的记录介质; 弹出装置，设置在所述主体中并且被配置为将所述记录介质弹出到所述输出托盘。该装置还可以包括可移动地连接到主体的可动片材引导构件和设置在可动片材引导构件的下游的记录介质排出方向并位于输出托盘上方的固定片材引导构件。可移动片材引导构件可以将从喷射装置喷射的记录介质向下压，并且固定片材引导构件可以从主体突出。

3. 发明申请

US20120114407A1 Image Forming Apparatus 有权
标题翻译：图像形成装置
公开(公告)号：US20120114407A1
公开(公告)日：2012-05-10
申请号：US13244356
申请日：2011-09-24
申请人： Kazutoshi Nakamura , Takashi Saito
发明人： Kazutoshi Nakamura , Takashi Saito
IPC分类号： B41J13/10
CPC分类号： G03G15/6552 , B41J13/106
摘要： An image forming apparatus is provided that includes an image forming unit disposed in a main body and configured to form an image on a recording medium, an output tray provided in the main body and configured to receive the recording medium having an image formed thereon, and an ejection device provided in the main body and configured to eject the recording medium to the output tray. The apparatus may further include a movable sheet guiding member movably attached to the main body and a stationary sheet guiding member disposed downstream of the movable sheet guiding member in a recording medium ejection direction and above the output tray. The movable sheet guiding member can press a recording medium ejected from the ejection device downward, and the stationary sheet guiding member can protrude from the main body.
摘要翻译：提供了一种图像形成装置，其包括：图像形成单元，其设置在主体中并且被配置为在记录介质上形成图像;输出托盘，设置在主体中并且被配置为接收具有形成在其上的图像的记录介质; 弹出装置，设置在所述主体中并且被配置为将所述记录介质弹出到所述输出托盘。该装置还可以包括可移动地连接到主体的可动片材引导构件和设置在可动片材引导构件的下游的记录介质排出方向并位于输出托盘上方的固定片材引导构件。可移动片材引导构件可以将从喷射装置喷射的记录介质向下压，并且固定片材引导构件可以从主体突出。

4. 发明申请

US20130182299A1 Sheet Feeding Device 有权
标题翻译：送纸装置
公开(公告)号：US20130182299A1
公开(公告)日：2013-07-18
申请号：US13744491
申请日：2013-01-18
申请人： Kazutoshi Nakamura
发明人： Kazutoshi Nakamura
IPC分类号： B65H3/06
CPC分类号： B65H3/06 , B65H3/063 , B65H3/5223 , B65H2402/544 , B65H2601/5242
摘要： A sheet feeding device including a roller to apply conveying force to one of a plurality of stacked sheets, a separator piece to apply conveying resistance to the stacked sheets and to nip the one of the stacked sheets in cooperation with the roller, a movable member being movable with respect to the roller, a pair of spring arms configured to contact the stacked sheets at an upstream position along a conveying direction with respect to a nipping position between the roller and the separator piece, and a bridge to bridge between the pair of spring arms, is provided. The bridge and the movable member are slidably in contact with each other at least when the sheet feeding device is in a conveyable condition.
摘要翻译：一种送纸装置，包括：向多个堆叠纸张中的一个施加输送力的辊，分隔件，以对所述堆叠的纸张施加输送阻力，并与所述辊一起夹持所述堆叠的纸张中的一个;可动件，相对于辊可移动的一对弹簧臂，构造成在相对于辊和分离片之间的夹持位置的输送方向的上游位置处接触堆叠的片材的一对弹簧臂，以及在一对弹簧之间桥接的桥提供武器。至少当纸张馈送装置处于可传送状态时，桥和可移动部件可滑动地彼此接触。

5. 发明授权

US08253398B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08253398B2
公开(公告)日：2012-08-28
申请号：US12500015
申请日：2009-07-09
申请人： Kazutoshi Nakamura , Norio Yasuhara
发明人： Kazutoshi Nakamura , Norio Yasuhara
IPC分类号： G05F1/40 , G05F1/613
CPC分类号： H02M3/1588 , H02M1/32 , H02M3/158 , Y02B70/1466
摘要： A semiconductor device includes: a high-side switching element having a first switching element connected between an input voltage line and an inductive load; and a low-side switching element having a second switching element and a third switching element that are connected in parallel between the inductive load and a reference voltage line. A surge current is discharged through the third switching element to the reference voltage line when a surge is applied to a terminal connected to the inductive load in the low-side switching element.
摘要翻译：一种半导体器件包括：高侧开关元件，其具有连接在输入电压线和感性负载之间的第一开关元件; 以及具有第二开关元件和第三开关元件的低侧开关元件，其并联连接在感性负载和参考电压线之间。当浪涌被施加到连接到低侧开关元件中的感性负载的端子时，浪涌电流通过第三开关元件放电到参考电压线。

6. 发明申请

US20110121803A1 SEMICONDUCTOR DEVICE AND DC-DC CONVERTER 审中-公开
标题翻译：半导体器件和DC-DC转换器
公开(公告)号：US20110121803A1
公开(公告)日：2011-05-26
申请号：US12885394
申请日：2010-09-17
申请人： Kazutoshi Nakamura , Koichi Endo
发明人： Kazutoshi Nakamura , Koichi Endo
IPC分类号： G05F1/08 , H01L27/092
CPC分类号： H01L27/0924 , H01L21/823821 , H01L21/823828 , H01L21/823878 , H01L27/0629 , H02M3/1588 , Y02B70/1466
摘要： According to one embodiment, a semiconductor device includes a base layer of a second conductivity type, a device isolation layer, a control electrode, a high dielectric layer, a first main electrode, and a second main electrode. The base layer includes a source region of a first conductivity type and a drain region of the first conductivity type. The source region and the drain region are selectively formed on a surface of the base layer. The device isolation layer is provided in the base layer to be extended in a direction from the source region to the drain region. The control electrode is provided on a top side of the device isolation layer to control a current passage between the source region and the drain region. The high dielectric layer is arranged in at least a part on a top side of the base layer or in at least a part in the device isolation layer. The high dielectric layer has a higher dielectric constant than a dielectric constant of the device isolation layer. The first main electrode is connected to the source region. The second main electrode is connected to the drain region.
摘要翻译：根据一个实施例，半导体器件包括第二导电类型的基极层，器件隔离层，控制电极，高介电层，第一主电极和第二主电极。基极层包括第一导电类型的源极区域和第一导电类型的漏极区域。源极区域和漏极区域选择性地形成在基极层的表面上。器件隔离层设置在基极层中，以从源极区域到漏极区域的方向延伸。控制电极设置在器件隔离层的顶侧，以控制源极区域和漏极区域之间的电流通路。高电介质层布置在基层的顶侧的至少一部分中或者在器件隔离层的至少一部分中。高介电层具有比器件隔离层的介电常数更高的介电常数。第一主电极连接到源区。第二主电极连接到漏区。

7. 发明授权

US07579669B2 Semiconductor device including power MOS field-effect transistor and driver circuit driving thereof 失效
标题翻译：包括功率MOS场效应晶体管和其驱动电路驱动的半导体器件
公开(公告)号：US07579669B2
公开(公告)日：2009-08-25
申请号：US11549297
申请日：2006-10-16
申请人： Kazutoshi Nakamura , Norio Yasuhara , Tomoko Matsudai , Kenichi Matsushita , Akio Nakagawa
发明人： Kazutoshi Nakamura , Norio Yasuhara , Tomoko Matsudai , Kenichi Matsushita , Akio Nakagawa
IPC分类号： H01L27/00
CPC分类号： H02M3/158 , H01L27/0922 , H01L29/41758 , H01L29/41775 , H01L29/42368 , H01L29/42376 , H01L29/4238 , H01L29/7813 , H01L29/7835 , H01L2924/0002 , H02M1/08 , H02M7/003 , H01L2924/00
摘要： A semiconductor device comprises a high side switching element, a driver circuit, and a low side switching element. The high side switching element is formed on a first semiconductor substrate, has a current path to one end of which an input voltage is supplied, and the other end of the current path is connected to an inductance. The driver circuit is formed on the first semiconductor substrate, on which the high side switching element is formed, and drives the high side switching element. The low side switching element is formed on a second semiconductor substrate separate from the first semiconductor substrate, and has a drain connected to the inductance and a source supplied with a reference potential.
摘要翻译：半导体器件包括高侧开关元件，驱动电路和低侧开关元件。高侧开关元件形成在第一半导体基板上，其一端具有输入电压的电流通路，电流路径的另一端与电感连接。驱动电路形成在形成有高侧开关元件的第一半导体基板上，驱动高侧开关元件。低侧开关元件形成在与第一半导体衬底分离的第二半导体衬底上，并且具有连接到电感的漏极和被提供参考电位的源极。

8. 发明授权

US07557545B2 Electric power unit operating in continuous and discontinuous conduction modes and control method therefor 失效
标题翻译：电力单元在连续和不连续导通模式下工作及其控制方法
公开(公告)号：US07557545B2
公开(公告)日：2009-07-07
申请号：US11485466
申请日：2006-07-13
申请人： Toshiyuki Naka , Akio Nakagawa , Kazutoshi Nakamura
发明人： Toshiyuki Naka , Akio Nakagawa , Kazutoshi Nakamura
IPC分类号： G05F1/618
CPC分类号： H02M3/157 , H02M3/1588 , Y02B70/1466
摘要： An electronic power unit includes first and second MOS transistors and a digital control circuit. The first MOS transistor applies a voltage to the load. The second MOS transistor remains on while the first MOS transistor remains off and rectifies the current flowing in the load. The digital control circuit turns on the first transistor upon lapse of a first time interval from the time the second MOS transistor is turned off. The digital control circuit turns on the second MOS transistor upon lapse of a second time interval from the time the first MOS transistor is turned off. The digital control circuit controls the on-period of the first MOS transistor so that the voltage applied to the load is constant in a discontinuous conduction mode. The digital control circuit determines, while the voltage applied to the load is constant, an optimal value of the first time from the duty.
摘要翻译：电子功率单元包括第一和第二MOS晶体管和数字控制电路。第一个MOS晶体管向负载施加电压。第二MOS晶体管保持导通，而第一MOS晶体管保持关断并且对负载中流动的电流进行整流。数字控制电路在从第二MOS晶体管截止时起第一时间间隔开启第一晶体管。数字控制电路在从第一MOS晶体管截止时经过第二时间间隔开启第二MOS晶体管。数字控制电路控制第一MOS晶体管的导通周期，使得施加到负载的电压在不连续导通模式下是恒定的。数字控制电路在施加到负载的电压是恒定的情况下确定第一次从占空比的最佳值。

9. 发明授权

US07138698B2 Semiconductor device including power MOS field-effect transistor and driver circuit driving thereof 失效
公开(公告)号：US07138698B2
公开(公告)日：2006-11-21
申请号：US11007254
申请日：2004-12-09
申请人： Kazutoshi Nakamura , Norio Yasuhara , Tomoko Matsudai , Kenichi Matsushita , Akio Nakagawa
发明人： Kazutoshi Nakamura , Norio Yasuhara , Tomoko Matsudai , Kenichi Matsushita , Akio Nakagawa
IPC分类号： H01L23/58
CPC分类号： H02M3/158 , H01L27/0922 , H01L29/41758 , H01L29/41775 , H01L29/42368 , H01L29/42376 , H01L29/4238 , H01L29/7813 , H01L29/7835 , H01L2924/0002 , H02M1/08 , H02M7/003 , H01L2924/00
摘要： A semiconductor device comprises a high side switching element, a driver circuit, and a low side switching element. The high side switching element is formed on a first semiconductor substrate, has a current path to one end of which an input voltage is supplied, and the other end of the current path is connected to an inductance. The driver circuit is formed on the first semiconductor substrate, on which the high side switching element is formed, and drives the high side switching element. The low side switching element is formed on a second semiconductor substrate separate from the first semiconductor substrate, and has a drain connected to the inductance and a source supplied with a reference potential.

10. 发明申请

US20060081920A1 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060081920A1
公开(公告)日：2006-04-20
申请号：US11245204
申请日：2005-10-07
申请人： Kazutoshi Nakamura , Syotaro Ono
发明人： Kazutoshi Nakamura , Syotaro Ono
IPC分类号： H01L21/336 , H01L29/94
CPC分类号： H01L29/7813 , H01L29/4236 , H01L29/42372 , H01L29/42376 , H01L29/4933 , H01L29/66719 , H01L29/66734
摘要： A semiconductor device includes: a semiconductor substrate of the first-type; a semiconductor region of the first-type formed on the substrate; a gate electrode a part of which is present within a trench selectively formed in part of the semiconductor region, and an extended top-end to have a wide width via a stepped-portion; a gate insulating-film formed between the trench and the gate electrode along a wall surface of the trench; a base layer of the second-type on the region via the film to enclose a side-wall except a bottom of the trench; a source region of the first-type adjacent to the film outside the trench in the vicinity of a top surface of the base layer; and an insulating-film formed partially between a bottom-surface of the top-end and a top-surface of the source region and formed to have a thickness larger than that of the gate insulating-film within the trench.
摘要翻译：半导体器件包括：第一类型的半导体衬底; 在基板上形成第一类型的半导体区域; 栅极电极，其一部分存在于在半导体区域的一部分中选择性地形成的沟槽中，并且延伸的顶端经由阶梯部分具有宽的宽度; 栅沟绝缘膜，沿着沟槽的壁表面形成在沟槽和栅电极之间; 经由膜在该区域上的第二类型的基底层以包围沟槽底部以外的侧壁; 所述第一类型的源极区域在所述基底层的顶表面附近与所述沟槽外部的膜相邻; 以及部分地形成在顶部的底表面和源极区的顶表面之间并且形成为具有比沟槽内的栅极绝缘膜的厚度大的厚度的绝缘膜。

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