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1. 发明授权

US06828169B2 Method of forming group-III nitride semiconductor layer on a light-emitting device 失效
标题翻译：在发光器件上形成III族氮化物半导体层的方法
公开(公告)号：US06828169B2
公开(公告)日：2004-12-07
申请号：US10463355
申请日：2003-06-17
申请人： Kazutaka Terashima , Mu-Jen Lai , Chiung-Yu Chang
发明人： Kazutaka Terashima , Mu-Jen Lai , Chiung-Yu Chang
IPC分类号： H01L2100
CPC分类号： H01L21/02381 , H01L21/02461 , H01L21/0254 , H01L21/02543 , H01L21/0262 , H01L21/02658 , H01L33/007 , H01L33/0079
摘要： A method of forming a group-III nitride semiconductor layer on a light-emitting device. First, a substrate is provided. Next, a buffer layer is formed on the substrate. A hydrogen treatment is performed on the buffer layer. Finally, a group-III nitride semiconductor layer is formed on the buffer layer. According to the present invention, a hydrogen treatment is performed on the buffer to prevent corrosion during subsequent process and remove particles from the buffer layer. Thus, the structure of the epitaxy layer following formed on the buffer layer is enhanced.
摘要翻译：一种在发光器件上形成III族氮化物半导体层的方法。首先，提供基板。接着，在基板上形成缓冲层。在缓冲层上进行氢处理。最后，在缓冲层上形成III族氮化物半导体层。根据本发明，对缓冲液进行氢处理以防止后续处理中的腐蚀并从缓冲层中除去颗粒。因此，缓冲层上形成的外延层的结构得以增强。

2. 发明授权

US06914315B2 GaN-based heterostructure photodiode 失效
标题翻译： GaN基异质结光电二极管
公开(公告)号：US06914315B2
公开(公告)日：2005-07-05
申请号：US10447434
申请日：2003-05-28
申请人： Mu-Jen Lai , Chiung-Yu Chang
发明人： Mu-Jen Lai , Chiung-Yu Chang
IPC分类号： H01L21/00 , H01L31/0328
CPC分类号： H01L31/1852 , H01L31/0304 , H01L31/03046 , H01L31/105 , Y02E10/544
摘要： The present invention relates to a GaN-based heterostructure photodiode comprising a P type layer, an N type layer, and an activity layer between the P type layer and the N type layer. The P type layer, the N type layer and the activity layer are made of GaN-based composition, and the activity layer is doped with borons so as to modulate the band gap between the P type layer and the N type layer. Therefore, the breakdown voltage can be increased and the light receiving ability can be promoted so that the photodiode to be a light receiving element can has a better performance for light detection.
摘要翻译：本发明涉及包含P型层，N型层和P型层与N型层之间的活性层的GaN基异质结构光电二极管。 P型层，N型层和活性层由GaN基组成制成，活性层掺杂有硼，以调节P型层和N型层之间的带隙。因此，可以提高击穿电压并且可以促进光接收能力，使得作为光接收元件的光电二极管可以具有更好的光检测性能。

3. 发明授权

US06787828B2 Optical-gate transistor and method of manufacturing the same 失效
标题翻译：光闸晶体管及其制造方法
公开(公告)号：US06787828B2
公开(公告)日：2004-09-07
申请号：US10635579
申请日：2003-08-07
申请人： Terashima Kazutaka , Shun-Hung Hsu , Chiung-Yu Chang , Mu-Jen Lai
发明人： Terashima Kazutaka , Shun-Hung Hsu , Chiung-Yu Chang , Mu-Jen Lai
IPC分类号： H01L31062
CPC分类号： H01L31/1035
摘要： The invention provides a method of manufacturing an optical-gate transistor. A BP buffer layer is formed on a silicone substrate first, and a first AIN layer is then formed for offsetting strain in the layers deposited on the first AIN layer. Subsequently, a GaN layer and an n-type AIN layer are successively deposited to form a hetero-junction at the interface. A selective epitaxy or anisotropic etching of a GaN-group material is conducted to form a prism-shaped, light-receiving layer with a cubic lattice. The prism-shaped, light-receiving layer focuses incident light to induce electrons in the n-type AIN layer, which then form a high-speed 2DEG in the GaN layer, thereby increasing the power and sensitivity of the transistor being controlled by illumination.
摘要翻译：本发明提供一种制造光栅晶体管的方法。首先在硅树脂基板上形成BP缓冲层，然后形成第一AlN层以抵消沉积在第一AlN层上的层的应变。随后，依次沉积GaN层和n型AlN层，以在界面处形成异质结。进行GaN基材料的选择性外延或各向异性蚀刻以形成具有立方晶格的棱镜状的光接收层。棱镜形的光接收层聚集入射光以在n型AIN层中感应电子，然后在GaN层中形成高速2DEG，由此增加通过照明控制的晶体管的功率和灵敏度。

4. 发明授权

US06835964B2 GaN-based composition semiconductor light-emitting element and its window layer structure 失效
标题翻译： GaN基组合物半导体发光元件及其窗口层结构
公开(公告)号：US06835964B2
公开(公告)日：2004-12-28
申请号：US10447433
申请日：2003-05-28
申请人： Mu-Jen Lai , Chiung-Yu Chang
发明人： Mu-Jen Lai , Chiung-Yu Chang
IPC分类号： H10L2715
CPC分类号： H01L33/32 , H01L33/02 , H01L33/025 , H01L33/14
摘要： A GaN-based composition semiconductor light-emitting element and its window layer structure includes a substrate where several epitaxy layers are sequentially formed and a window layer formed on the epitaxy layers so as to construct a light-emitting element. Each of the epitaxy layers and the window layer is composed of GaN-based composition. Boron atoms are doped in the window layer so as to increase the band gap of the window layer and decrease the refractive index. By appropriately doping the boron atoms, the activity rate of the P-type will be increased so as to increase the electric conductivity. Furthermore, by increasing the thickness of the window layer, the probability of defect generation can be reduced.
摘要翻译： GaN基组合物半导体发光元件及其窗口层结构包括其中顺序地形成几个外延层的衬底和形成在外延层上的窗口层以构成发光元件。每个外延层和窗口层由GaN基组成构成。硼原子掺杂在窗口层中，以增加窗口层的带隙并降低折射率。通过适当地掺杂硼原子，P型的活性率将增加，从而增加导电性。此外，通过增加窗口层的厚度，可以减少缺陷产生的概率。

5. 发明授权

US06825498B2 White light LED 失效
标题翻译：白光LED
公开(公告)号：US06825498B2
公开(公告)日：2004-11-30
申请号：US10603659
申请日：2003-06-26
申请人： Mu-Jen Lai , Chia-Cheng Liu , Chiung-Yu Chang
发明人： Mu-Jen Lai , Chia-Cheng Liu , Chiung-Yu Chang
IPC分类号： H01L2922
CPC分类号： H01L33/08 , H01L33/32
摘要： The present invention discloses a light emitting diode (LED) by using a P-type ZnTe layer or a ZnSe layer as a substrate. To match the lattice between the substrate and blue light LED of cubic crystal, a BP(boron phosphide) buffer layer of single crystal is formed on the substrate. When the blue light LED emits blue light of wavelength from 450 nm to 470 nm, the ZnTe or ZnSe substrate absorbs the blue light and emits yellow-green light of wavelength 550 nm. Thus, white light is produced by mixing the blue light and the yellow-green light.
摘要翻译：本发明公开了通过使用P型ZnTe层或ZnSe层作为基板的发光二极管（LED）。为了匹配立方晶的衬底和蓝光LED之间的晶格，在衬底上形成单晶的BP（磷化硼）缓冲层。当蓝光LED发射波长为450nm至470nm的蓝色光时，ZnTe或ZnSe衬底吸收蓝色光并发出波长为550nm的黄绿色光。因此，通过混合蓝光和黄绿光产生白光。

6. 发明授权

US06815722B2 Light-emitting device with reduced lattice mismatch 失效
标题翻译：具有减小的晶格失配的发光器件
公开(公告)号：US06815722B2
公开(公告)日：2004-11-09
申请号：US10601957
申请日：2003-06-23
申请人： Mu-Jen Lai , Chiung-Yu Chang
发明人： Mu-Jen Lai , Chiung-Yu Chang
IPC分类号： H01L2715
CPC分类号： H01L33/0075 , H01L21/02378 , H01L21/02381 , H01L21/02392 , H01L21/02395 , H01L21/02458 , H01L21/02461 , H01L21/02463 , H01L21/02505 , H01L21/0251 , H01L21/0254 , H01L21/0262 , H01L33/007
摘要： A light-emitting device with reduced lattice mismatch. The light-emitting device comprises a substrate having a first lattice constant, a first buffer multilayer deposited on the substrate, a second buffer multilayer deposited on the first buffer multilayer, and a GaN base epitaxial layer deposited on the second buffer multilayer. The lattice constant of the first buffer multilayer ranges from the first lattice constant at the bottom of the first buffer multilayer to a second lattice constant at the top of the first buffer multilayer. The lattice constant of the second buffer multilayer ranges from the second lattice constant at the bottom of the second buffer multilayer to a third lattice constant at the top of the second buffer multilayer.
摘要翻译：具有减小的晶格失配的发光器件。发光器件包括具有第一晶格常数的衬底，沉积在衬底上的第一缓冲层多层体，沉积在第一缓冲层多层上的第二缓冲层叠层和沉积在第二缓冲层多层上的GaN基极外延层。第一缓冲层叠层的晶格常数从第一缓冲层多层的底部的第一晶格常数到第一缓冲层多层的顶部的第二晶格常数。第二缓冲层叠层的晶格常数从第二缓冲层多层的底部的第二晶格常数到第二缓冲层多层的顶部的第三晶格常数。

7. 发明申请

US20050115492A1 Method and apparatus of the chemical metal organic vapor epitaxy for the multi-chamber epitaxy layer deposition 审中-公开
标题翻译：用于多室外延层沉积的化学金属有机蒸气外延的方法和装置
公开(公告)号：US20050115492A1
公开(公告)日：2005-06-02
申请号：US10722522
申请日：2003-11-28
申请人： Chia-Cheng Liu , Chiung-Yu Chang , Tung-Hung Tsai , Shun-Yi Hsu , Chiu-Ming Peng
发明人： Chia-Cheng Liu , Chiung-Yu Chang , Tung-Hung Tsai , Shun-Yi Hsu , Chiu-Ming Peng
IPC分类号： C30B23/00 , C30B25/00 , C30B25/02 , C30B28/12 , C30B28/14 , C30B29/40
CPC分类号： C30B25/02 , C30B29/40
摘要： A method and the apparatus of the chemical metal organic vapor epitaxy for the multi-chamber epitaxy layer deposition can process many epitaxy reactions of the organic light-emitting diodes at the same time. More, the different types of epitaxy layers can individual react while passing through the adjustment of time periods. By using the multiple organic light-emitting diodes, it can form multiple epitaxy layers with varying types at the same time. Therefore, it achieves the purpose of shortening the manufacturing process.
摘要翻译：用于多室外延层沉积的化学金属有机蒸气外延的方法和装置可以同时处理有机发光二极管的许多外延反应。更多的是，不同类型的外延层可以通过时间段的调整而单独反应。通过使用多个有机发光二极管，可以同时形成具有不同类型的多个外延层。因此，实现缩短制造工序的目的。

8. 发明授权

US10272507B2 Scroll saw 有权
公开(公告)号：US10272507B2
公开(公告)日：2019-04-30
申请号：US15393091
申请日：2016-12-28
申请人： Chiung-Yu Chang
发明人： Chiung-Yu Chang
IPC分类号： B23D49/00 , B23D51/12 , B23D51/16
摘要： A scroll saw has a machine base. The machine base includes two parallel transmission shafts thereon. The two transmission shafts are connected to each other through a synchronous unit. The synchronous unit has an upper crankshaft and a lower crankshaft connected to the transmission shafts, respectively. A plurality of crankshaft connecting levers are connected between the upper crankshaft and the lower crankshaft. When one of the transmission shafts is rotated, another transmission shaft will be driven to rotate through the synchronous unit. Because the synchronous unit is composed of the crankshaft connecting levers, the connection between the transmission shafts is relatively tight. This ensures that the transmission shafts do not generate a deviation in rotation to avoid vibration and noise.

9. 发明申请

US20160045963A1 TRANSMISSION MECHANISM OF A FRET SAWING MACHINE 审中-公开
标题翻译：刨花机传动机理
公开(公告)号：US20160045963A1
公开(公告)日：2016-02-18
申请号：US14664230
申请日：2015-03-20
申请人： Chiung-Yu Chang
发明人： Chiung-Yu Chang
IPC分类号： B23D51/14 , B23D51/16
CPC分类号： B23D51/14 , B23D51/16
摘要： A transmission mechanism of a fret sawing machine includes a saw frame provided thereon with two parallel transmission units, and a fretsaw connected between the two transmission units. Each transmission unit consists of a driving rod, which has one end connected with a power unit and another end extending radially to form an eccentric portion. A connecting rod is pivotally connected with the eccentric portion, having another end pivotally connected with a sliding block that is connected with a fretsaw. Thus, the driving rod can drive the sliding block to carry out linear reciprocating motion and actuate the fretsaw to do sawing work.
摘要翻译：毛刺锯切机的传动机构包括设置有两个平行传动单元的锯框架和连接在两个传动单元之间的一个偏心轴。每个传动单元包括驱动杆，驱动杆的一端与动力单元连接，另一端径向延伸以形成偏心部分。连杆与偏心部分枢转地连接，另一端与滑块连接，该滑块与偏心连接。因此，驱动杆可以驱动滑块进行线性往复运动，并致动偏心片进行锯切工作。

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