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1. 发明授权

US09048319B2 Thin film device and manufacturing method thereof 有权
标题翻译：薄膜器件及其制造方法
公开(公告)号：US09048319B2
公开(公告)日：2015-06-02
申请号：US13585441
申请日：2012-08-14
申请人： Kazushige Takechi , Shinnosuke Iwamatsu , Seiya Kobayashi , Yoshiyuki Watanabe , Toru Yahagi
发明人： Kazushige Takechi , Shinnosuke Iwamatsu , Seiya Kobayashi , Yoshiyuki Watanabe , Toru Yahagi
IPC分类号： H01L29/786
CPC分类号： H01L21/46 , H01L21/441 , H01L29/401 , H01L29/66969 , H01L29/78609 , H01L29/7869 , H01L29/78696
摘要： With a TFT using an oxide semiconductor film, there is such an issue that oxygen deficit is generated in a surface region of the oxide semiconductor film after performing plasma etching of a source/drain electrode, thereby increasing the off-current. Provided is a TFT which includes: a gate electrode on an insulating substrate; a gate insulating film on the gate electrode; an oxide semiconductor film containing indium on the gate insulating film; and a source/drain electrode on the oxide semiconductor film. Further, the peak position derived from an indium 3d orbital in the XPS spectrum of a surface layer in a part of the oxide semiconductor film where the source/drain electrode is not superimposed is shifted towards a high energy side than the peak position derived from the indium 3d orbital in the XPS spectrum of an oxide semiconductor region existing in a lower part of the surface layer.
摘要翻译：对于使用氧化物半导体膜的TFT，存在在对源极/漏极进行等离子体蚀刻之后在氧化物半导体膜的表面区域产生氧缺陷从而增加截止电流的问题。提供一种TFT，其包括：绝缘基板上的栅电极; 栅电极上的栅极绝缘膜; 在所述栅极绝缘膜上含有铟的氧化物半导体膜; 以及氧化物半导体膜上的源/漏电极。此外，源极/漏极不叠加的氧化物半导体膜的一部分中的表面层的XPS光谱中的来自铟3d轨道的峰值位置偏离来自于源极/漏极的峰值位置的高能量侧铟3d轨道在存在于表面层的下部的氧化物半导体区域的XPS光谱中。

2. 发明授权

US09378981B2 Thin film device and manufacturing method thereof 有权
公开(公告)号：US09378981B2
公开(公告)日：2016-06-28
申请号：US14687459
申请日：2015-04-15
申请人： Kazushige Takechi , Shinnosuke Iwamatsu , Seiya Kobayashi , Yoshiyuki Watanabe , Toru Yahagi
发明人： Kazushige Takechi , Shinnosuke Iwamatsu , Seiya Kobayashi , Yoshiyuki Watanabe , Toru Yahagi
IPC分类号： H01L29/786 , H01L21/46 , H01L21/441 , H01L29/40 , H01L29/66
CPC分类号： H01L21/46 , H01L21/441 , H01L29/401 , H01L29/66969 , H01L29/78609 , H01L29/7869 , H01L29/78696
摘要： With a TFT using an oxide semiconductor film, there is such an issue that oxygen deficit is generated in a surface region of the oxide semiconductor film after performing plasma etching of a source/drain electrode, thereby increasing the off-current. Provided is a TFT which includes: a gate electrode on an insulating substrate; a gate insulating film on the gate electrode; an oxide semiconductor film containing indium on the gate insulating film; and a source/drain electrode on the oxide semiconductor film. Further, the peak position derived from an indium 3d orbital in the XPS spectrum of a surface layer in a part of the oxide semiconductor film where the source/drain electrode is not superimposed is shifted towards a high energy side than the peak position derived from the indium 3d orbital in the XPS spectrum of an oxide semiconductor region existing in a lower part of the surface layer.

3. 发明申请

US20070219542A1 Surgical procedure and instrumentation for intrastromal implants of lens or strengthening materials 审中-公开
标题翻译：用于镜片或加强材料的基质内植入物的外科手术和手术
公开(公告)号：US20070219542A1
公开(公告)日：2007-09-20
申请号：US11377087
申请日：2006-03-15
申请人： Toru Yahagi
发明人： Toru Yahagi
IPC分类号： A61B18/18
CPC分类号： A61F9/008 , A61F9/00827 , A61F9/00834 , A61F9/009 , A61F2009/00872
摘要： A surgical procedure for implanting a lens or strengthening material in a cornea without making a flap as is done in Lasik procedures. A femtosecond laser or some future developed laser which has the same ability is modified to cut a pocket in the stroma layer of a cornea with no side cuts and only an opening at the surface of a cornea. Alternatively, a modified microkeratome shaped and sized to form the desired shape for a passageway bed cut which is cut to join a central bed cut. Alternatively, the passageway bed cut can be done using a femtosecond laser or some future developed laser which has the same ability. The passageway bed cut is smaller in dimension than a central bed cut of a pocket in which the lens will be implanted in procedures where an expandable lens or strengthening material is used. A modified microkeratome having a web, a central blade shaped to form the passageway bed cut and sled runner on either side of the blade and separated therefrom is also disclosed. A patient interface with a mask is also disclosed to allow a femtosecond laser or some future developed laser which has the same ability may also be used to form both the central bed cut and a passageway bed cut or only a single bed cut with an opening at the surface of the cornea to form the pocket is also disclosed.
摘要翻译：用于将角膜或强化材料植入角膜而不制造瓣片的外科手术，如在Lasik程序中所做的那样。具有相同能力的飞秒激光器或一些未来开发的激光器被修改以切割角膜的基质层中的口袋，没有侧切口，并且仅在角膜表面处开口。或者，修改的微型角膜刀的形状和尺寸以形成用于切割以连接中心床切口的通道床切口的期望形状。或者，通道床切割可以使用具有相同能力的飞秒激光器或一些未来开发的激光器来完成。通道切割的尺寸小于口袋的中心床切口，其中将使用可扩张的透镜或加强材料的过程中植入透镜。还公开了一种改进的微型角膜刀，其具有腹板，中心叶片形状以在叶片的任一侧上形成通道床切口并且与其分离。还公开了具有掩模的患者界面，以允许具有相同能力的飞秒激光器或一些未来开发的激光器也可以用于形成中心床切口和通道床切割，或仅形成具有开口处的单个床还公开了形成口袋的角膜的表面。

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