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1. 发明授权

US5936726A Inspection method, inspection apparatus and method of production of semiconductor device using them 失效
标题翻译：使用它们的半导体器件的检查方法，检查装置和制造方法
公开(公告)号：US5936726A
公开(公告)日：1999-08-10
申请号：US913392
申请日：1997-09-09
申请人： Kazuo Takeda , Hidetsugu Ishida , Atsushi Hiraiwa
发明人： Kazuo Takeda , Hidetsugu Ishida , Atsushi Hiraiwa
IPC分类号： G01N21/94 , G01N21/00
CPC分类号： G01N21/94
摘要： An inspection method and apparatus for discriminating the foreign particles on the surface of a sample from the foreign particles or defects within the sample, and a semiconductor-device producing method using the inspection method and apparatus. The inspection apparatus includes a light source, a first optical system that causes the light from the source to be directed to the sample, a second optical system for condensing the light coming back from the sample, a polarizing prism for separating the condensed light into polarized components, and optical detectors, for detecting the polarized components. The two optical systems, are arranged for their optical axes to make an angle of 50.degree. to 120.degree. relative to each other. The foreign particles on the surface of the sample and the foreign particles or defects within the sample are respectively discriminated from each other as side scattered light and backward scattered light by utilizing the difference between the intensity ratios of the polarized light components.
摘要翻译： PCT No.PCT / JP95 / 00398 Sec。 371日期1997年9月9日 102（e）日期1997年9月9日PCT 1996年3月10日PCT公布。第WO96 / 28721号公报日期1996年9月19日一种用于鉴别样品表面上的异物与样品中的异物或缺陷的检查方法和装置，以及使用检查方法和装置的半导体器件制造方法。检查装置包括光源，使来自源的光被引导到样本的第一光学系统，用于聚集从样品回来的光的第二光学系统，用于将聚光分离成偏振光的偏光棱镜组件和光学检测器，用于检测偏振分量。两个光学系统被布置成使它们的光轴相对于彼此成50°到120°的角度。通过利用偏振光分量的强度比之间的差异，将样品表面上的杂质颗粒和样品中的异物或缺陷分别彼此区分为侧向散射光和反向散射光。

2. 发明授权

US06635950B1 Semiconductor device having buried boron and carbon regions, and method of manufacture thereof 失效
标题翻译：具有埋藏硼和碳区域的半导体器件及其制造方法
公开(公告)号：US06635950B1
公开(公告)日：2003-10-21
申请号：US09665616
申请日：2000-09-19
申请人： Hidetsugu Ishida , Seiichi Isomae
发明人： Hidetsugu Ishida , Seiichi Isomae
IPC分类号： H01L29167
CPC分类号： H01L29/167 , H01L21/26506 , H01L21/3221 , H01L29/161 , Y10S257/913 , Y10S257/914
摘要： To improve the gettering performance by ion implanting boron and improves the production yield of the semiconductor device by using an epitaxial wafer of good quality suppressing the occurrence of dislocations. For this purpose, an epitaxial wafer in which an epitaxial layer of about 1 &mgr;m is formed to a CZ semiconductor substrate implanted with boron ions which are dopant and carbon ions which are not a dopant is provided, and transistors are formed on the surface of the epitaxial layer.
摘要翻译：为了通过离子注入硼来提高吸杂性能，通过使用质量好的外延晶片，可以提高半导体器件的制造成本，从而抑制位错的发生。为此，形成外延层，其中形成约1μm的外延层提供注入硼离子的CZ半导体衬底，其是掺杂剂和不是掺杂剂的碳离子，并且在外延层的表面上形成晶体管。

3. 发明授权

US06198157B1 Semiconductor device having buried boron and carbon regions 失效
标题翻译：具有埋置硼和碳区域的半导体器件
公开(公告)号：US06198157B1
公开(公告)日：2001-03-06
申请号：US09024661
申请日：1998-02-17
申请人： Hidetsugu Ishida , Seiichi Isomae
发明人： Hidetsugu Ishida , Seiichi Isomae
IPC分类号： H01L29167
CPC分类号： H01L29/167 , H01L21/26506 , H01L21/3221 , H01L29/161 , Y10S257/913 , Y10S257/914
摘要： To improve the gettering performance by ion implanting boron and improves the production yield of the semiconductor device by using an epitaxial wafer of good quality suppressing the occurrence of dislocations. For this purpose, an epitaxial wafer in which an epitaxial layer of about 1 &mgr;m is formed to a CZ semiconductor substrate implanted with boron ions which are dopant and carbon ions which are not a dopant is provided, and transistors are formed on the surface of the epitaxial layer.
摘要翻译：为了通过离子注入硼来提高吸杂性能，通过使用质量好的外延晶片，可以提高半导体器件的制造成本，从而抑制位错的发生。为此，形成外延层，其中形成约1μm的外延层提供注入硼离子的CZ半导体衬底，其是掺杂剂和不是掺杂剂的碳离子，并且在外延层的表面上形成晶体管。

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