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    • 6. 发明授权
    • Silicon nitride powder and method for producing the same
    • 氮化硅粉末及其制造方法
    • US5716670A
    • 1998-02-10
    • US434759
    • 1995-05-04
    • Jin-Joo ParkAtsushi KimuraKoji YamaguchiAkira Yamakawa
    • Jin-Joo ParkAtsushi KimuraKoji YamaguchiAkira Yamakawa
    • C01B21/068C04B35/593C04B35/626B05D7/00
    • C04B35/5935C01B21/0687C01P2004/80C01P2006/10Y10T428/2991Y10T428/2993
    • The invention relates to material silicon nitride powder used for production of silicon nitride ceramics products. Provided herein is a material powder which can offer a compact having a homogeneous packing structure of the powder with good reproducibility and also to provide a method for producing the same. Accordingly to the method, a silicon nitride powder is heat treated in two-stage processing, one stage in an inert gas or reducing atmosphere at 100.degree. C.-1000.degree. C. for 5-600 min., and another stage in an oxidizing atmosphere at 300.degree. C.-1200.degree. C. for 5-600 min. As a result of this treatment, a silicon nitride powder is obtained in which its powder particles are crystalline in their interior and are coated with an amorphous layer having a 1-10 nm surface thickness and composed mainly of Si, N, O, and H, an atomic number ratio of oxygen to nitrogen (O/N) of the surface layer being within a range of 0.1-2.0.
    • 本发明涉及用于生产氮化硅陶瓷制品的材料氮化硅粉末。 本文提供的是能够提供具有良好重现性的具有粉末的均匀包装结构的压块的材料粉末,并且还提供其制造方法。 根据该方法,氮化硅粉末在二级加工中进行热处理,在惰性气体或还原气氛中,在100℃-1000℃下进行5-600分钟,另一阶段为氧化 气氛在300℃-1200℃下进行5-600分钟。 作为该处理的结果,得到其粉末颗粒在其内部是结晶的氮化硅粉末,并且涂覆有具有1-10nm表面厚度并且主要由Si,N,O和H组成的非晶层 表面层的氧与氮的原子数比(O / N)在0.1〜2.0的范围内。
    • 7. 发明授权
    • Silicon nitride powder and method for producing the same
    • 氮化硅粉末及其制造方法
    • US5478649A
    • 1995-12-26
    • US219377
    • 1994-03-29
    • Jin-Joo ParkAtsushi KimuraKoji YamaguchiAkira Yamakawa
    • Jin-Joo ParkAtsushi KimuraKoji YamaguchiAkira Yamakawa
    • C01B21/068C04B35/593C04B35/626B32B5/16C01B21/06
    • C04B35/5935C01B21/0687C01P2004/80C01P2006/10Y10T428/2991Y10T428/2993
    • The invention relates to material silicon nitride powder used for production of silicon nitride ceramics products. Provided herein is a material powder which can offer a compact having a homogeneous packing structure of the powder with good reproducibility and also to provide a method for producing the same. According to the method, a silicon nitride powder is heat treated in two-stage processing, one stage in an inert gas or reducing atmosphere at 100.degree. C.-1000.degree. C. for 5-600 min., and another stage in an oxidizing atmosphere at 300.degree. C.-1200.degree. C. for 5-600 min. As a result of this treatment, a silicon nitride powder is obtained in which its powder particles are crystalline in their interior and are coated with an amorphous layer having a 1-10 nm surface thickness and composed mainly of Si, N, O, and H, an atomic number ratio of oxygen to nitrogen (O/N) of the surface layer being within a range of 0.1-2.0.
    • 本发明涉及用于生产氮化硅陶瓷制品的材料氮化硅粉末。 本文提供的是能够提供具有良好重现性的具有粉末的均匀包装结构的压块的材料粉末,并且还提供其制造方法。 根据该方法,氮化硅粉末在两步加工中进行热处理,在惰性气体或还原气氛中,在100℃-1000℃下进行5-600分钟,另一阶段在氧化 气氛在300℃-1200℃下进行5-600分钟。 作为该处理的结果,得到其粉末颗粒在其内部是结晶的氮化硅粉末,并且涂覆有具有1-10nm表面厚度并且主要由Si,N,O和H组成的非晶层 表面层的氧与氮的原子数比(O / N)在0.1〜2.0的范围内。
    • 10. 发明授权
    • Silicon nitride ceramic sliding material and process for producing the
same
    • 氮化硅陶瓷滑动材料及其制造方法
    • US5922629A
    • 1999-07-13
    • US847746
    • 1997-04-22
    • Jin-Joo ParkYasushi MochidaAkira KuibiraOsamu KomuraAkira Yamaguchi
    • Jin-Joo ParkYasushi MochidaAkira KuibiraOsamu KomuraAkira Yamaguchi
    • F16C33/24C04B35/584C04B35/593C04B35/64C04B38/00C10M103/06C04B35/587
    • C04B35/5935C04B35/584C04B38/0051C04B2111/00353
    • A silicon nitride ceramic sliding material comprising silicon nitride crystal grains and a grain boundary phase and having a porosity of 2 to 10% and a maximum pore size of 20 to 100 .mu.m. The silicon nitride ceramic sliding material preferably has a textural structure wherein the proportion of the total area of silicon nitride crystal grains of 0.1 to 10 .mu.m.sup.2 in area to the total area of all the silicon nitride crystal grains present in an arbitrary two-dimensional cross section is 30 to 90% and the proportion of the number of silicon nitride crystal grains of 2 to 10 in aspect ratio to the number of all the silicon nitride crystal grains present in that cross section is at least 20%. The material is produced by mixing a silicon nitride powder with a sintering aid powder, molding the resulting mixture, then heat-treating the resulting molded body in a nitrogen-containing atmosphere under reduced pressure at 1,000 to 1,500.degree. C., and then sintering it in a nonoxidizing atmosphere under ordinary pressure or under pressure, at 1,550 to 1,800.degree. C.
    • 一种氮化硅陶瓷滑动材料,其包含氮化硅晶粒和晶界相,并且具有2至10%的孔隙率和20至100μm的最大孔径。 氮化硅陶瓷滑动材料优选具有纹理结构,其中氮化硅晶粒的总面积与面积中的所有氮化硅晶粒的总面积的相对于任意二维十字形中的全部氮化硅晶粒的面积为0.1-10μm 截面积为30〜90%,氮化硅晶粒数的比例为纵横比为2〜10的比例与存在于该截面中的全部氮化硅晶粒的数量的比例为20%以上。 通过将氮化硅粉末与烧结助剂粉末混合,将所得混合物成型,然后在含氮气氛中,在减压下在1000〜1500℃下对所得成形体进行热处理,然后烧结 在常压或压力下的非氧化性气氛中,在1550〜1800℃。