专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20160043405A1 BIPOLAR BATTERY CURRENT COLLECTOR AND BIPOLAR BATTERY 审中-公开
标题翻译：双极电池电流收集器和双极电池
公开(公告)号：US20160043405A1
公开(公告)日：2016-02-11
申请号：US14880815
申请日：2015-10-12
申请人： Kazuki MIYATAKE , Kenji HOSAKA , Yoshio SHIMOIDA , Hideaki HORIE
发明人： Kazuki MIYATAKE , Kenji HOSAKA , Yoshio SHIMOIDA , Hideaki HORIE
IPC分类号： H01M4/66 , H01M4/80
CPC分类号： H01M4/668 , H01M2/348 , H01M4/66 , H01M4/663 , H01M4/666 , H01M4/80 , H01M10/613 , H01M10/637 , H01M10/647 , H01M10/654 , H01M2004/029 , H01M2200/10 , H01M2200/106
摘要： Provided is a bipolar battery current collector that includes a conductive resin layer formed in such a manner as to, when at least part of the conductive resin layer reaches a predetermined temperature, interrupts a flow of electric current through the at least part of the conductive resin layer in a vertical direction thereof. Also provided is a bipolar battery using the current collector. It is possible by the use of the current collector to suppress local heat generation in the bipolar battery and improve the durability of the bipolar battery.
摘要翻译：提供一种双极电池集电体，其包括导电性树脂层，所述导电性树脂层以至少一部分导电性树脂层达到规定温度的方式形成，从而中断通过所述导电性树脂的至少一部分的电流层。还提供了使用集电器的双极电池。通过使用集电体可以抑制双极型电池的局部发热，提高双极型电池的耐久性。

2. 发明申请

US20080009089A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20080009089A1
公开(公告)日：2008-01-10
申请号：US11773649
申请日：2007-07-05
申请人： Tetsuya HAYASHI , Masakatsu HOSHI , Yoshio SHIMOIDA , Hideaki TANAKA , Shigeharu YAMAGAMI
发明人： Tetsuya HAYASHI , Masakatsu HOSHI , Yoshio SHIMOIDA , Hideaki TANAKA , Shigeharu YAMAGAMI
IPC分类号： H01L21/00
CPC分类号： H01L29/7828 , H01L29/0623 , H01L29/1608 , H01L29/267 , H01L29/66068
摘要： A semiconductor substrate made of a semiconductor material is prepared, and a hetero semiconductor region is formed on the semiconductor substrate to form a heterojunction in an interface between the hetero semiconductor region and the semiconductor substrate. The hetero semiconductor region is made of a semiconductor material having a bandgap different from that of the semiconductor material, and a part of the hetero semiconductor region includes a film thickness control portion whose film thickness is thinner than that of the other part thereof. By oxidizing the hetero semiconductor region with a thickness equal to the film thickness of the film thickness control portion, a gate insulating film adjacent to the heterojunction is formed. A gate electrode is formed on the gate insulating film. This makes it possible to manufacture a semiconductor device including the gate insulating film with a lower ON resistance, and with a higher insulating characteristic and reliability.
摘要翻译：制备由半导体材料制成的半导体衬底，并且在半导体衬底上形成异质半导体区域，以在异质半导体区域和半导体衬底之间的界面中形成异质结。异质半导体区域由具有与半导体材料的带隙不同的带隙的半导体材料制成，并且异质半导体区域的一部分包括膜厚度比其他部分薄的膜厚控制部分。通过以等于膜厚控制部分的膜厚的厚度氧化杂半导体区域，形成与异质结相邻的栅极绝缘膜。在栅极绝缘膜上形成栅电极。这使得可以制造包括具有较低导通电阻的栅极绝缘膜以及更高的绝缘特性和可靠性的半导体器件。

3. 发明申请

US20090200575A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20090200575A1
公开(公告)日：2009-08-13
申请号：US12423207
申请日：2009-04-14
申请人： Yoshio SHIMOIDA , Masakatsu Hoshi , Tetsuya Hayashi , Hideaki Tanaka , Shigeharu Yamagami
发明人： Yoshio SHIMOIDA , Masakatsu Hoshi , Tetsuya Hayashi , Hideaki Tanaka , Shigeharu Yamagami
IPC分类号： H01L29/78
CPC分类号： H01L29/78 , H01L21/047 , H01L29/1608 , H01L29/267 , H01L29/66068 , H01L29/772 , H01L29/7828
摘要： A semiconductor device is provided with a semiconductor region, a gate electrode, a source electrode and a drain electrode. The semiconductor region is formed on a semiconductor substrate surface and includes a first semiconductor portion of a first conducting type, a second semiconductor portion of a second conducting type, a band gap distinct from the substrate's band gap, more than two accumulated semiconductor layers, and junctions between the layers. The semiconductor layers each contain an impurity of the first conducting type. The gate electrode adjoins a heterojunction between the second semiconductor portion and the semiconductor substrate through a gate insulation film. The source electrode is coupled to the semiconductor region. The drain electrode is coupled to the semiconductor substrate.
摘要翻译：半导体器件设置有半导体区域，栅极电极，源极电极和漏极电极。半导体区域形成在半导体衬底表面上，并且包括第一导电类型的第一半导体部分，第二导电类型的第二半导体部分，与衬底带隙不同的带隙，多于两个的累积半导体层，以及层之间的交叉点。半导体层各自含有第一导电类型的杂质。栅极通过栅极绝缘膜与第二半导体部分和半导体衬底之间的异质结相邻。源电极耦合到半导体区域。漏电极耦合到半导体衬底。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式