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    • 3. 发明授权
    • Ceramic capacitor
    • 陶瓷电容器
    • US06326052B1
    • 2001-12-04
    • US09484950
    • 2000-01-18
    • Mitsuru NagashimaKazuhiro YoshidaMasanobu KishiMakoto Murata
    • Mitsuru NagashimaKazuhiro YoshidaMasanobu KishiMakoto Murata
    • B05D512
    • A ceramic capacitor having an improved electrode soldering performance, little or no diffusion of solder even in the case of being used under a high temperature environment and a reduced characteristic deterioration is provided. The dry plating electrodes have a three-layer structure. First layers of the electrodes are respectively provided on both surfaces of a ceramic element assembly and made of any one or more of Cu, Ni-Cu alloy and Zn. Second layers of the electrodes are respectively provided on the surfaces of the first layers and made of a material different from the material of the first layers and any one or more of Cr, Ni-Cr alloy, Fe-Cr alloy, Co-Cr alloy, Ti, Zn, Al, W, V and Mo. Third layers of the electrodes are respectively provided on the surfaces of the second layers and made of any one or more of Cu, Ni-Cu alloy, Ag and Au.
    • 提供一种具有改善的电极焊接性能,即使在高温环境下使用并且特性劣化降低的情况下焊料扩散少的陶瓷电容器。 干电镀电极具有三层结构。 电极的第一层分别设置在陶瓷元件组件的两个表面上,由Cu,Ni-Cu合金和Zn中的任何一种或多种制成。 电极的第二层分别设置在第一层的表面上,并且由不同于第一层的材料和Cr,Ni-Cr合金,Fe-Cr合金,Co-Cr合金中的一种或多种的材料制成 ,Ti,Zn,Al,W,V和Mo。第三层电极分别设置在第二层的表面上,由Cu,Ni-Cu合金,Ag和Au中的一种或多种制成。
    • 4. 发明授权
    • Ceramic capacitor
    • 陶瓷电容器
    • US6043973A
    • 2000-03-28
    • US974289
    • 1997-11-19
    • Mitsuru NagashimaKazuhiro YoshidaMasanobu KishiMakoto Murata
    • Mitsuru NagashimaKazuhiro YoshidaMasanobu KishiMakoto Murata
    • H01G4/12B05D5/12H01G4/005H01G4/008H01G4/01
    • H01G4/008Y10T29/435
    • A ceramic capacitor having an improved electrode soldering performance, little or no diffusion of solder even in the case of being used under a high temperature environment and a reduced characteristic deterioration is provided. The dry plating electrodes have a three-layer structure. First layers of the electrodes are respectively provided on both surfaces of a ceramic element assembly and made of any one or more of Cu, Ni--Cu alloy and Zn. Second layers of the electrodes are respectively provided on the surfaces of the first layers and made of a material different from the material of the first layers and any one or more of Cr, Ni--Cr alloy, Fe--Cr alloy, Co--Cr alloy, Ti, Zn, Al, W, V and Mo. Third layers of the electrodes are respectively provided on the surfaces of the second layers and made of any one or more of Cu, Ni--Cu alloy, Ag and Au.
    • 提供一种具有改善的电极焊接性能,即使在高温环境下使用并且特性劣化降低的情况下焊料扩散少的陶瓷电容器。 干电镀电极具有三层结构。 电极的第一层分别设置在陶瓷元件组件的两个表面上,由Cu,Ni-Cu合金和Zn中的任何一种或多种制成。 电极的第二层分别设置在第一层的表面上,并且由不同于第一层的材料和Cr,Ni-Cr合金,Fe-Cr合金,Co-Cr合金中的一种或多种的材料制成 ,Ti,Zn,Al,W,V和Mo。第三层电极分别设置在第二层的表面上,由Cu,Ni-Cu合金,Ag和Au中的一种或多种制成。
    • 7. 发明授权
    • Method for manufacturing electronic component
    • 电子元件制造方法
    • US08382934B2
    • 2013-02-26
    • US13183511
    • 2011-07-15
    • Hiroki HoriguchiYuji KimuraKazuhiro Yoshida
    • Hiroki HoriguchiYuji KimuraKazuhiro Yoshida
    • B29C65/02B32B37/14
    • G01P15/18B81B2201/0235B81B2203/0118B81C1/00269G01P1/023G01P15/0802G01P15/123G01P2015/0828H01L21/50H01L23/10H01L2924/0002Y10T29/49002Y10T156/10H01L2924/00
    • A triaxial acceleration sensor which has a structure including a cover joined to a substrate including a mechanically operable functional unit to be sealed, is adapted in such a way that the joined state can be reliably obtained so as to not interfere with a displacement of the functional unit. A sealing frame is made of a heated polyimide on a periphery of an upper main surface of a substrate provided with a functional unit, and a sealing layer made of a polyimide is formed over an entire lower main surface of a cover. For integrating the substrate and the cover so as to seal the functional unit, the sealing frame and the sealing layer are joined to each other by heating and pressurizing the sealing frame and the sealing layer at a temperature that is about 50° C. to about 150° C. higher than a glass transition temperature of the polyimide while bringing the sealing frame and the sealing layer into contact with each other. In this case, a recess is formed in the vicinity of a portion of the sealing layer to be brought into contact with the sealing frame so that a bump, generated from the sealing layer which is deformed in the joining step, is prevented from protruding toward the functional unit.
    • 一种三轴加速度传感器,其具有包括接合到包括要被密封的机械可操作功能单元的基板的盖的结构,使得可以可靠地获得接合状态,以便不干扰功能的位移 单元。 密封框架由设置有功能单元的基板的上主表面的周边上的加热的聚酰亚胺制成,并且在盖的整个下主表面上形成由聚酰亚胺制成的密封层。 为了整合基板和盖以便密封功能单元,密封框架和密封层通过在约50℃到约50℃的温度下加热和加压密封框架和密封层而彼此接合 比使聚酰亚胺的玻璃化转变温度高150℃,同时使密封框和密封层相互接触。 在这种情况下,在密封层的一部分附近形成凹部以与密封框架接触,从而防止在接合步骤中变形的密封层产生的凸块朝向 功能单元。
    • 10. 发明授权
    • Semiconductor device having a dummy gate
    • 具有虚拟栅极的半导体器件
    • US08026536B2
    • 2011-09-27
    • US11391286
    • 2006-03-29
    • Kazuhiro Yoshida
    • Kazuhiro Yoshida
    • H01L23/52
    • H01L27/092H01L23/5222H01L27/0207H01L2924/0002H01L2924/00
    • A semiconductor device includes a plurality of MOS transistors, wherein each of the MOS transistors has a drain region, a pair of source regions sandwiching therebetween the drain region, and a pair of normal gates each overlying a space between the drain region and a corresponding one of the source regions. A plurality of dummy gates are provided each between adjacent two of the MOS transistors. The dummy gate electrodes are maintained at an equi-potential with the adjacent drain regions. MOS transistors include a row of pMOS transistors and nMOS transistors, wherein each of pMOS transistors and a corresponding nMOS transistor configure a CMOS gate, and a plurality of CMOS gates configure a ring oscillator.
    • 一种半导体器件包括多个MOS晶体管,其中每个MOS晶体管具有漏极区域,一对源极区域夹在它们之间的漏极区域以及一对法向栅极,每对栅极覆盖漏极区域和相应的一个漏极区域之间的空间 的源地区。 在相邻的两个MOS晶体管之间设置多个伪栅极。 虚拟栅极电极与相邻的漏极区域保持等电位。 MOS晶体管包括一行pMOS晶体管和nMOS晶体管,其中pMOS晶体管和相应的nMOS晶体管中的每一个构成CMOS栅极,并且多个CMOS栅极配置环形振荡器。