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    • 10. 发明申请
    • SILICON CARBIDE SUBSTRATE AND METHOD FOR MANUFACTURING SAME
    • 硅碳化硅基板及其制造方法
    • US20120168774A1
    • 2012-07-05
    • US13395768
    • 2011-05-19
    • Takeyoshi MasudaSatomi ItohShin HaradaMakoto Sasaki
    • Takeyoshi MasudaSatomi ItohShin HaradaMakoto Sasaki
    • H01L29/24H01L21/20
    • H01L21/187C30B29/36C30B33/06H01L29/1608
    • A silicon carbide substrate and a method for manufacturing the silicon carbide substrate are obtained, each of which achieves reduced manufacturing cost of semiconductor devices using the silicon carbide substrate. A method for manufacturing a SiC-combined substrate includes the steps of: preparing a plurality of single-crystal bodies each made of silicon carbide (SiC); forming a collected body; connecting the single-crystal bodies to each other; and slicing the collected body. In the step, the plurality of SiC single-crystal ingots are arranged with a silicon (Si) containing Si layer interposed therebetween, so as to form the collected body including the single-crystal bodies. In the step, adjacent SiC single-crystal ingots are connected to each other via at least a portion of the Si layer, the portion being formed into silicon carbide by heating the collected body. In step, the collected body in which the SiC single-crystal ingots are connected to each other is sliced.
    • 获得碳化硅基板和制造碳化硅基板的方法,其中的每一个都降低了使用碳化硅基板的半导体器件的制造成本。 SiC复合衬底的制造方法包括以下步骤:制备由碳化硅(SiC)制成的多个单晶体; 形成收集体; 将单晶体体彼此连接; 并切片收集的身体。 在该步骤中,多个SiC单晶锭被布置成包含硅(Si)的Si层,以形成包括单晶体的收集体。 在该步骤中,相邻的SiC单晶锭通过Si层的至少一部分彼此连接,该部分通过加热收集体而形成为碳化硅。 在步骤中,将SiC单晶锭彼此连接的收集体切片。